Microchip Technology 1N5658

Overview

1N5658 from Microchip (formerly Microsemi) is a unidirectional transient voltage suppressor (TVS) diode in a hermetically sealed DO-13 metal package, designed for high-reliability surge protection in aerospace, avionics, and industrial systems. It features a 90 V minimum breakdown voltage (V_BR), 89.2 V rated standoff voltage (V_WM), 144 A peak pulse current (I_PP), and clamps transients to ≤158 V at 1 ms pulse width - enabling robust secondary lightning protection per IEC61000-4-5 with 12 Ω source impedance.

For engineers reviewing the 1N5658 datasheet, 1N5658 pinout, 1N5658 application, or 1N5658 equivalent, this device delivers sub-100 ps response time, 1500 W peak pulse power (10/1000 µs), and radiation-hardened performance per MicroNote 050 - critical for ESD/EFT protection (IEC61000-4-2/-4-4), inductive switching transient suppression, and mission-critical airborne electrical system hardening.

Technical Context

The 1N5658 operates as a unidirectional avalanche diode, leveraging silicon junction physics to enter controlled reverse breakdown when transient voltage exceeds its 89.2 V standoff rating. Its DO-13 metal-glass hermetic package ensures stable thermal resistance (50 °C/W junction-to-lead) and operation from –55 °C to +175 °C - supporting harsh-environment deployment without derating penalties up to 125 °C lead temperature.

It exhibits a positive temperature coefficient of breakdown voltage (αV_BR = 0.107 %/°C), ensuring predictable voltage drift across temperature, and maintains <5 µA standby leakage at V_WM. The cathode is internally connected to the case, defining polarity and enabling direct chassis-grounded mounting for low-inductance transient shunting.

Key Specifications

Pinout & Package

DO-13 (DO-202AA) hermetically sealed metal-glass package with axial leads; cathode terminal electrically bonded to case and marked by diode symbol on body.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Compared with 1N5658, the 1N5658A offers tighter parametric control and military qualification for mission-critical use, while the SMCJ85CA trades hermeticity and radiation tolerance for surface-mount compatibility - making 1N5658 the optimal balance of ruggedness, speed, and legacy through-hole integration in aerospace and defense platforms.

Availability

1N5658 is available at Aetrix Electronics and suitable for aerospace avionics, industrial motor drives, downhole oilfield sensors, and military vehicle electronics requiring stable component supply, long-lifecycle support, and traceable hermetic packaging.

Supply support for 1N5658 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microchip Technology acquired Microsemi in 2018 and now manufactures high-reliability analog and discrete semiconductors for aerospace, defense, and industrial markets.

The 1N5658 belongs to Microchip's legacy TVS diode family originally developed by Microsemi for radiation-tolerant, high-power transient suppression - targeting applications where hermetic sealing, extreme temperature operation, and IEC61000-4-5 compliance are non-negotiable.

FAQ

What is the maximum clamping voltage of the 1N5658 under a 10/1000 µs surge?

The 1N5658 clamps to a maximum of 158 V when subjected to its rated 144 A peak pulse current under a 10/1000 µs waveform. This value is measured at T_A = 25 °C and defines the upper voltage limit imposed on protected circuitry during worst-case transient events - critical for ensuring downstream ICs remain within absolute maximum ratings.

Is the 1N5658 suitable for ESD protection per IEC61000-4-2?

Yes, the 1N5658 is explicitly validated for ESD protection per IEC61000-4-2 due to its <100 ps response time and low dynamic impedance. Its ability to clamp sub-nanosecond discharges to ≤158 V makes it effective for safeguarding sensitive inputs in avionics and test equipment - though layout must minimize trace inductance to preserve speed advantage.

Does the 1N5658 have a cathode-to-case connection, and how does that affect PCB layout?

Yes, the 1N5658 has its cathode internally connected to the metal case (Lead 1), which must be soldered directly to a low-inductance ground plane or chassis. This design reduces total clamping loop inductance by eliminating an internal bond wire - but requires mechanical grounding via the case, not just the lead - so PCB footprints must accommodate case contact and thermal relief.

What is the standoff voltage (V_WM) of the 1N5658, and why is it lower than the breakdown voltage?

The 1N5658 has a rated standoff voltage (V_WM) of 89.2 V, which is intentionally set below its minimum breakdown voltage (90 V) to ensure the device remains fully non-conductive during normal operation. This margin prevents leakage current rise and thermal runaway while allowing rapid transition into avalanche conduction once transients exceed V_WM.

Can the 1N5658 be used in place of the 1N5658A in a new design?

The 1N5658 can be used in place of the 1N5658A where military screening and tighter V_BR tolerance (99–105 V vs. 90–105 V) are not required. However, the 1N5658A is necessary for programs specifying MIL-PRF-19500/500 compliance or JANTXV qualification - the base 1N5658 lacks those certifications despite identical electrical and mechanical specs.