Microchip Technology 1N5659

Overview

1N5659 from Microchip (formerly Microsemi) is a unidirectional transient voltage suppressor (TVS) diode in a hermetically sealed DO-13 metal package, designed for high-reliability surge protection in aerospace, avionics, and industrial systems. It features a 97.2 V rated standoff voltage (VWM), 108–132 V breakdown voltage (V(BR)), 173 A peak pulse current (IPP), and clamps transients to ≤173 V at 173 A with <100 ps response time.

For engineers reviewing the 1N5659 datasheet, 1N5659 pinout, 1N5659 application, or 1N5659 equivalent, key selection criteria include its 1500 W peak pulse power rating (10/1000 µs), -55°C to +175°C operating temperature range, hermetic DO-13 package suitability for harsh environments, and compliance with IEC61000-4-2/4-4/4-5 secondary lightning standards.

Technical Context

The 1N5659 operates as a unidirectional avalanche diode, entering controlled breakdown above its 97.2 V standoff voltage to clamp fast transients while maintaining low leakage (<5 µA at VWM). Its DO-13 metal-glass package provides inherent radiation hardness per MicroNote 050 and thermal resistance of 50°C/W junction-to-lead.

It delivers 1500 W peak pulse power under 10/1000 µs waveform conditions at 25°C lead temperature, with derating to 1 W DC power dissipation at ≤125°C. The device's 0.107 %/°C temperature coefficient of V(BR) ensures predictable voltage drift across its full operating range.

Key Specifications

Pinout & Package

1N5659 uses a two-terminal DO-13 (DO-202AA) axial-leaded metal-glass package. The cathode is electrically connected to the case and marked with a diode symbol on the body. Leads are tin-lead plated per MIL-STD-750 Method 2026.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Compared with 1N5659, the 1N5659A offers tighter parametric control for defense-critical systems, while the SMCJ100A trades hermetic reliability for SMT manufacturability-neither is pin-compatible, but both deliver equivalent 1500 W surge handling at ~100 V standoff.

Availability

1N5659 is available at Aetrix Electronics and suitable for aerospace power bus protection, avionics signal line hardening, and industrial motor drive DC link safeguarding requiring stable component supply across extended product lifecycles.

Supply support for 1N5659 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microchip Technology acquired Microsemi in 2018 and maintains its high-reliability analog and discrete portfolio, including radiation-hardened and military-qualified components for mission-critical systems.

The 1N5659 belongs to Microchip's legacy TVS diode family originally developed by Microsemi for aerospace and defense applications-engineered specifically for extreme temperature operation, hermetic sealing, and IEC61000-4-5 compliance in safety-critical power infrastructure.

FAQ

What is the maximum clamping voltage of the 1N5659 under a 10/1000 µs surge?

The 1N5659 has a maximum clamping voltage (VC) of 173 V when subjected to its rated peak pulse current of 173 A under a 10/1000 µs waveform. This value is guaranteed per the T4-LDS-0096 datasheet and defines the upper voltage limit imposed on protected circuits during surge events. The 1N5659 achieves this clamping performance while maintaining sub-100 ps response time and 1500 W peak pulse power capability.

Is the 1N5659 suitable for IEC61000-4-5 secondary lightning protection?

Yes, the 1N5659 is explicitly rated for IEC61000-4-5 secondary lightning protection across multiple classes: Class 1 (42 Ω source) up to 1N5658A, Class 2 (42 Ω) up to 1N5651A, and Class 4 (2 Ω) up to 1N5636A. Its 1500 W peak pulse power and 173 A IPP enable compliance with Class 4 requirements when used with appropriate series impedance. The 1N5659 itself supports Class 1–4 configurations depending on system-level design and source impedance.

Does the 1N5659 have a hermetic package, and why does that matter?

Yes, the 1N5659 uses a hermetically sealed DO-13 (DO-202AA) metal-glass package, confirmed in the mechanical specifications section of the T4-LDS-0096 datasheet. This construction prevents moisture ingress, eliminates outgassing, and provides inherent radiation hardness per Microsemi MicroNote 050-making the 1N5659 suitable for sealed avionics enclosures, spaceflight electronics, and high-reliability military platforms where long-term parameter stability is non-negotiable.

What is the standoff voltage (VWM) of the 1N5659, and how is it used in circuit design?

The 1N5659 has a rated standoff voltage (VWM) of 97.2 V, meaning it remains nonconductive up to this reverse voltage level at 25°C. In circuit design, VWM must be selected ≥ the maximum continuous operating voltage of the protected line-e.g., for a 72–96 V DC bus, the 1N5659 provides safe margin while ensuring reliable clamping above normal operation. Exceeding VWM risks premature conduction and thermal failure, so proper derating per temperature is essential.

How does the 1N5659 differ from the 1N5659A variant?

The 1N5659A is the military-qualified version of the 1N5659, featuring tighter breakdown voltage tolerance (108–114 V vs. 108–132 V), compliance with MIL-PRF-19500/500, and JANTXV qualification. Both share identical DO-13 packaging, 1500 W peak pulse power, 173 V clamping, and -55°C to +175°C operation. The 1N5659A is required for defense programs demanding traceable process controls and enhanced screening, whereas the standard 1N5659 serves commercial and industrial applications.