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Microchip Technology 1N5660
- Part No.:
- 1N5660
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- DO-202AA, DO-13, Axial
- Datasheet:
-
1N5660.pdf
- Description:
- TVS DIODE
- Quantity:
- Payment:
- Shipping:
Inventory:8,378
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Product details
Overview
1N5660 from Microchip (formerly Microsemi) is a unidirectional transient voltage suppressor (TVS) diode in a hermetically sealed DO-13 metal package, designed for high-reliability surge protection in aerospace, avionics, and industrial systems. It features a 105 V rated standoff voltage (VWM), 117–124 V breakdown voltage (V(BR)), 187 A peak pulse current (IPP), 187 V maximum clamping voltage (VC), and 1500 W peak pulse power (10/1000 µs). It is commonly deployed to protect power rails and signal lines against secondary lightning surges per IEC61000-4-5 with 2–42 Ω source impedance.
For engineers reviewing the 1N5660 datasheet, 1N5660 pinout, 1N5660 application, or 1N5660 equivalent, this device serves as a high-power, ultrafast (<100 ps response) unidirectional TVS for mission-critical DC power and interface line protection where hermetic sealing, radiation hardness, and military-grade reliability are required.
Technical Context
The 1N5660 operates as a silicon avalanche diode, entering controlled reverse-biased breakdown above its VWM of 105 V to clamp transients while maintaining low leakage (≤5 µA at VWM). Its DO-13 package provides junction-to-lead thermal resistance of 50°C/W and supports operation from –55°C to +175°C.
It delivers 1500 W peak pulse power under standardized 10/1000 µs waveform conditions at TL = 25°C, with clamping voltage tightly bounded at 187 V at 187 A IPP. Its temperature coefficient of breakdown voltage is +0.107%/°C, enabling predictable derating across wide ambient ranges.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 105 V - Maximum continuous reverse operating voltage before conduction begins; sets minimum system rail compatibility. |
| V(BR) @ I(BR) | 117–124 V @ 1 mA - Confirmed avalanche onset range; ensures reliable triggering above nominal supply. |
| VC @ IPP | 187 V @ 187 A - Maximum clamped voltage during 10/1000 µs surge; defines worst-case overvoltage seen by protected circuitry. |
| PPP | 1500 W - Peak pulse power handling capacity; enables robust protection against IEC61000-4-5 Class 1–4 surges. |
| ID @ VWM | ≤5 µA - Ultra-low standby leakage; minimizes power loss and avoids false triggering in high-impedance circuits. |
| Response Time | <100 ps - Near-instantaneous avalanche turn-on; effective against ESD (IEC61000-4-2) and EFT (IEC61000-4-4). |
| Package | DO-13 (DO-202AA) - Hermetically sealed metal-glass case; provides radiation hardness, moisture immunity, and MIL-PRF-19500 compliance. |
Pinout & Package
DO-13 (DO-202AA) package: hermetically sealed metal case with glass insulator; cathode connected directly to case; polarity marked by diode symbol on body; weight ≈1.4 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Lead 2) | Forward conduction terminal | Connected internally to semiconductor die anode; used for forward-bias testing and polarity identification. |
| Cathode (Lead 1 / Case) | Reverse conduction & clamping terminal | Electrically tied to metal case; must be connected to protected line; provides low-inductance path to ground during surge. |
Key Features
| Feature | Design Value |
|---|---|
| Unidirectional TVS architecture | Enables precise clamping only on reverse transients while allowing normal forward conduction in series-configured protection. |
| Hermetic DO-13 metal package | Guarantees long-term reliability in humid, corrosive, or high-vacuum environments; meets MIL-PRF-19500/500 requirements. |
| Inherent radiation hardness | Validated per MicroNote 050; suitable for avionics, satellite subsystems, and nuclear instrumentation without additional shielding. |
| 1500 W peak pulse rating | Supports IEC61000-4-5 secondary lightning protection up to Class 4 (42 Ω source) without derating at TL = 25°C. |
| 0.107%/°C V(BR) tempco | Ensures predictable, monotonic increase in breakdown voltage with temperature-critical for thermal stability in high-temp avionics bays. |
Applications
| Aerospace Power Bus Protection | Avionics Signal Line Protection |
|---|---|
Use Scenario: Protecting 28 VDC aircraft power distribution buses against load dump and inductive switching spikes. IC Role / Device Role / Timing Role: Unidirectional TVS clamping element placed between bus and chassis ground. Use Value: Limits transient overvoltage to ≤187 V during 187 A surges, preserving downstream regulators and controllers per DO-160 Section 22. |
Use Scenario: Shielding ARINC 429 data receivers from induced RF and EFT coupling on flight control interfaces. IC Role / Device Role / Timing Role: Fast-response clamping diode on differential signal pair inputs. Use Value: Sub-100 ps response prevents bit errors during 4 kV EFT bursts (IEC61000-4-4), maintaining data integrity without signal distortion. |
| Industrial Motor Drive DC Link | Military Vehicle Electronics |
Use Scenario: Safeguarding IGBT gate drivers and bus voltage sensors in 100–150 V DC motor drives subject to regenerative braking spikes. IC Role / Device Role / Timing Role: Standoff-rated TVS across DC link capacitor terminals. Use Value: 105 V VWM matches typical 120 V nominal bus; 1500 W rating absorbs repetitive 10/1000 µs switching transients without degradation. |
Use Scenario: Hardening 24/28 V vehicle electronics (radios, navigation units) against MIL-STD-1275B transient events. IC Role / Device Role / Timing Role: Primary surge suppression component on main power input. Use Value: Hermetic DO-13 construction ensures survivability in wide-temperature (-55°C to +175°C), high-vibration battlefield environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N5660A | Tighter V(BR) tolerance (117–124 V → 121–124 V); same DO-13 package and ratings. | Required for JANTXV-qualified designs needing ±5% breakdown spec compliance per MIL-PRF-19500/500. | Select 1N5660A when military qualification (JAN/JANTX/JANTXV prefix) and tighter V(BR) binning are mandatory. |
| SMCJ100A | Surface-mount SMC package; 100 V VWM; 1500 W rating; slightly higher VC (162 V @ 175 A). | Used where PCB space constraints prohibit through-hole DO-13; lacks hermetic seal and radiation hardness. | Choose SMCJ100A for commercial industrial designs prioritizing density and reflow assembly over hermeticity or radiation tolerance. |
Compared with 1N5660, the 1N5660A offers tighter breakdown control for military programs, while the SMCJ100A trades hermetic reliability for surface-mount compatibility-neither is pin-compatible, but both serve overlapping surge protection functions in distinct mechanical and qualification contexts.
Availability
1N5660 is available at Aetrix Electronics and suitable for aerospace power bus protection, avionics signal line hardening, and industrial motor drive DC link safeguarding requiring stable component supply, long-lifecycle support, and traceable sourcing.
Supply support for 1N5660 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microchip Technology acquired Microsemi in 2018 and now manufactures high-reliability analog and discrete components including radiation-hardened and military-qualified semiconductors.
The 1N5660 belongs to Microchip's legacy TVS diode family originally developed by Microsemi for defense and aerospace applications, emphasizing hermetic packaging, extreme temperature operation, and compliance with MIL-PRF-19500 and DO-160 standards.
FAQ
What is the maximum clamping voltage of the 1N5660 under standard surge conditions?
The 1N5660 exhibits a maximum clamping voltage (VC) of 187 V when subjected to its rated 187 A peak pulse current (IPP) under the 10/1000 µs waveform condition. This value is measured at TL = 25°C and defines the upper voltage limit imposed on protected circuitry during transient events, ensuring downstream components remain within safe operating limits.
Is the 1N5660 suitable for ESD protection per IEC61000-4-2?
Yes, the 1N5660 is explicitly validated for ESD protection per IEC61000-4-2 due to its sub-100 ps response time and low clamping voltage. Its fast avalanche turn-on ensures effective suppression of ±8 kV contact and ±15 kV air discharge events without latch-up or degradation, making it appropriate for protecting sensitive avionics and test equipment interfaces.
Does the 1N5660 have military qualification options?
Yes, the 1N5660A variant is available with JAN, JANTX, or JANTXV prefixes (e.g., JANTXV1N5660A) and is qualified per MIL-PRF-19500/500 for high-reliability military applications. These versions feature tighter breakdown voltage tolerances and full traceability, while retaining identical electrical ratings and DO-13 packaging as the commercial 1N5660.
What is the thermal resistance specification for the 1N5660?
The 1N5660 has a junction-to-lead thermal resistance (RθJL) of 50°C/W when measured at 0.375 inches (10 mm) from the case body. This parameter is critical for calculating junction temperature rise during repetitive surge events and confirms suitability for high-temperature environments up to +175°C ambient, as verified in Microsemi MicroNote 050.
Can the 1N5660 be used in bidirectional configurations?
No, the 1N5660 is strictly unidirectional and must be installed with cathode (case) connected to the line being protected. For bidirectional TVS functionality in the same DO-13 package, Microchip specifies the separate 1N6036–1N6072A series-these are distinct devices with different internal structure and cannot substitute for the 1N5660 in unidirectional applications.
1N5660 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- DO-202AA, DO-13, Axial
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 105V
- Voltage - Breakdown (Min):
- 117V
- Voltage - Clamping (Max) @ Ipp:
- 187V
- Current - Peak Pulse (10/1000µs):
- 8A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 175°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- DO-13 (DO-202AA)
1N5660 FAQ
1.How can I place an order for 1N5660 through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N5660 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N5660 reliable?
The price and inventory of 1N5660 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5660 is usually 5 days.
3.What payment methods are accepted for 1N5660?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5660 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N5660?
1N5660 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N5660 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N5660?
For technical support, including 1N5660 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5660 requirements.
6.How does Aetrix verify that 1N5660 is sourced from the original manufacturer or authorized distributors?
All 1N5660 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5660 meets industry standards.
7.What is the process for return or replacement of 1N5660?
All 1N5660 units undergo pre-shipment inspection (PSI). If there is an issue with 1N5660, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N5660 part is unused and in its original packaging.
Return procedure for 1N5660:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N5660 Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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