My Inquiry
My Account
Microchip Technology 1N5660A
- Part No.:
- 1N5660A
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- DO-13
- Datasheet:
-
1N5660A.pdf
- Description:
- TVS DIODE 111VWM 179VC DO13
- Quantity:
- Payment:
- Shipping:
Inventory:6,489
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
1N5660A from Microchip Technology is a unidirectional transient voltage suppressor (TVS) diode in a hermetically sealed DO-13 metal package, designed for high-energy surge protection in aerospace, avionics, and industrial systems. It features a 111 V rated standoff voltage (VWM), 124 V maximum clamping voltage (VC) at 179 A peak pulse current (IPP), and 1500 W peak pulse power rating at 10/1000 µs waveform.
For engineers reviewing the 1N5660A datasheet, 1N5660A pinout, 1N5660A application, or 1N5660A equivalent, key selection criteria include its military-grade hermetic DO-13 package, sub-100 ps response time, IEC 61000-4-2/4-4/4-5 compliance for ESD/EFT/secondary lightning, and radiation-hardened performance per MicroNote 050.
Technical Context
The 1N5660A operates as a unidirectional avalanche diode, entering breakdown at minimum 117 V (VBR @ 1 mA) and clamping transients to ≤124 V within <100 ps. Its DO-13 package provides 50 °C/W junction-to-lead thermal resistance and supports operation from –55 °C to +175 °C.
It delivers 1500 W non-repetitive peak pulse power under 10/1000 µs conditions with ≤5 µA standby current at VWM, and exhibits a temperature coefficient of breakdown voltage (αVBR) of 0.107 %/°C - critical for stable clamping across wide temperature ranges in airborne systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 111 V - maximum continuous reverse operating voltage before conduction begins; sets system-level DC bus compatibility. |
| VBR min/max | 117 V / 124 V @ 1 mA - ensures reliable avalanche initiation above nominal rail voltage while bounding worst-case breakdown spread. |
| VC @ IPP | 124 V @ 179 A - peak clamped voltage during 10/1000 µs surge; defines protected circuit's maximum overvoltage stress. |
| PPP | 1500 W - peak pulse power handling capacity; enables robust protection against IEC 61000-4-5 Class 4 surges (2 Ω source). |
| IPP | 179 A - maximum single-pulse surge current; determines survivability against high-current transients like inductive switch-off. |
| Response Time | <100 ps - near-instantaneous turn-on; essential for suppressing ESD events (IEC 61000-4-2) before IC damage occurs. |
| TJ Range | –55 °C to +175 °C - extended temperature capability supports deployment in engine bays, avionics bays, and downhole equipment. |
Pinout & Package
Package: DO-13 (DO-202AA), hermetically sealed metal-glass case with cathode connected to case and polarity marked by diode symbol. Tin-lead plated leads compliant with MIL-STD-750 Method 2026.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal | Connected to protected line or signal path; conducts only during forward-biased operation (not used in standard TVS configuration). |
| Cathode | Reverse-biased clamping terminal | Electrically tied to metal case; must be connected to system ground or reference plane to enable avalanche clamping during transients. |
Key Features
| Feature | Design Value |
|---|---|
| Hermetic DO-13 metal package | Enables long-term reliability in high-humidity, high-vibration, and radiation-intensive environments such as aircraft and satellites. |
| 1500 W peak pulse power (10/1000 µs) | Supports IEC 61000-4-5 secondary lightning protection up to Class 4 with 2 Ω source impedance without derating. |
| Sub-100 ps response time | Prevents ESD-induced latch-up or gate oxide rupture in downstream CMOS/SiC components per IEC 61000-4-2 Level 4. |
| Radiation hardness (per MicroNote 050) | Validated total ionizing dose (TID) tolerance suitable for low-earth orbit (LEO) avionics and nuclear instrumentation. |
| MIL-PRF-19500/500 qualified variants | JANTXV1N5660A version available for defense/aerospace programs requiring screened, lot-controlled, and traceable components. |
Applications
| Aerospace Power Bus Protection | Avionics Signal Line Protection |
|---|---|
Use Scenario: Protecting 28 VDC and 115 VAC aircraft power distribution networks from load dump, generator switching, and lightning-induced surges. IC Role / Device Role / Timing Role: Unidirectional TVS diode placed between power rail and chassis ground to clamp transients below equipment withstand limits. Use Value: Maintains 111 V standoff margin above nominal 115 VAC rectified rails while clamping to 124 V - preventing damage to upstream rectifiers and downstream DC-DC converters. |
Use Scenario: Shielding ARINC 429 data lines and sensor inputs in flight control computers from ESD and RF-induced transients. IC Role / Device Role / Timing Role: Point-of-entry TVS on differential signal pairs, leveraging sub-100 ps response to suppress fast-rising ESD pulses before receiver input stages. Use Value: Enables compliance with RTCA DO-160 Section 22 (lightning-induced transient) and Section 25 (ESD) without adding RC filtering that degrades signal integrity. |
| Industrial Motor Drive I/O Protection | Nuclear Instrumentation Front-End Protection |
Use Scenario: Safeguarding PLC analog input modules and encoder interfaces against inductive kickback from solenoids and contactors. IC Role / Device Role / Timing Role: Unidirectional TVS mounted directly at connector entry points to shunt surge energy before reaching op-amp front-ends or ADC drivers. Use Value: Withstands 200 A 8.3 ms half-sine forward surge current and maintains ≤5 µA leakage at 111 V - preserving measurement accuracy in 16-bit systems. |
Use Scenario: Protecting gamma-ray detector bias supplies and preamplifier inputs in reactor monitoring systems exposed to neutron/gamma radiation fields. IC Role / Device Role / Timing Role: Radiation-hardened TVS providing fail-safe clamping in high-TID environments where polymer-packaged alternatives degrade. Use Value: Validated radiation tolerance per MicroNote 050 allows uninterrupted operation at >100 krad(Si) TID - eliminating need for redundant shielding or frequent replacement. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ110A | Surface-mount SMC package; 110 V VWM, 177 V VC @ 150 A; lower thermal resistance (junction-to-ambient) but non-hermetic plastic body. | Preferred for space-constrained PCBs and automated assembly; unsuitable for high-humidity or radiation environments due to moisture ingress risk. | Select SMCJ110A when volume production, reflow compatibility, and cost are prioritized over hermeticity and radiation tolerance. |
| 1N5658A | Lower VWM (89.2 V), lower VC (152 V @ 152 A); same DO-13 package, identical military qualification path and radiation hardness. | Better suited for 72–80 V DC systems (e.g., shipboard 72 V buses); cannot replace 1N5660A in 115 VAC-derived rails without risking premature conduction. | Choose 1N5658A only when system operating voltage is ≤90 V and tighter clamping voltage is required for sensitive downstream circuitry. |
Compared with SMCJ110A and 1N5658A, the 1N5660A uniquely balances 111 V standoff, hermetic reliability, and radiation hardness - making it irreplaceable in certified avionics power conditioning where failure modes must be eliminated, not mitigated.
Availability
1N5660A is available at Aetrix Electronics and suitable for aerospace power conditioning, avionics signal protection, and nuclear instrumentation requiring stable component supply with full traceability and long-lifecycle support.
Supply support for 1N5660A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microchip Technology (formerly Microsemi) is a U.S.-based semiconductor company specializing in high-reliability analog, mixed-signal, and radiation-tolerant components for aerospace, defense, and industrial markets.
The 1N5660A belongs to Microchip's legacy JAN/JANTXV-qualified TVS diode family, engineered specifically for mission-critical surge protection in environments where hermetic sealing, extreme temperature operation, and radiation immunity are non-negotiable design requirements.
FAQ
What is the maximum clamping voltage of the 1N5660A under standard test conditions?
The 1N5660A has a maximum clamping voltage (VC) of 124 V when subjected to its rated peak pulse current of 179 A using the 10/1000 µs waveform. This value is measured at TA = 25 °C and defines the upper voltage limit imposed on protected circuits during surge events - critical for ensuring downstream components remain within their absolute maximum ratings. The 1N5660A consistently achieves this clamping performance across its full operating temperature range.
Is the 1N5660A suitable for IEC 61000-4-5 secondary lightning protection?
Yes, the 1N5660A is explicitly rated for IEC 61000-4-5 secondary lightning protection up to Class 4 with a 2 Ω source impedance, as confirmed in the official datasheet (T4-LDS-0096 Rev. 3, Page 2). Its 1500 W peak pulse power rating and 179 A IPP ensure compliance without external derating. The 1N5660A's hermetic DO-13 package further enhances reliability in the high-energy, high-humidity conditions typical of lightning test environments.
Does the 1N5660A have radiation-hardened characteristics?
Yes, the 1N5660A is inherently radiation hard per Microsemi MicroNote 050, a documented qualification confirming its suitability for total ionizing dose (TID) environments exceeding 100 krad(Si). This radiation tolerance is intrinsic to its hermetically sealed DO-13 construction and silicon process - not an optional add-on - making the 1N5660A a validated choice for satellite payloads, nuclear instrumentation, and airborne systems where single-event effects must be minimized.
What is the standoff voltage (VWM) of the 1N5660A and how does it relate to system design?
The 1N5660A has a rated standoff voltage (VWM) of 111 V, meaning it remains non-conductive up to this reverse voltage at 25 °C. Per datasheet Note 1, VWM must equal or exceed the system's maximum continuous operating voltage - for example, 115 VAC-derived DC rails after rectification and filtering. Selecting the 1N5660A ensures no leakage-induced power loss or false triggering while maintaining sufficient margin for line regulation and temperature drift.
Can the 1N5660A be used in surface-mount designs?
No, the 1N5660A is exclusively available in the through-hole DO-13 (DO-202AA) metal package and is not offered in surface-mount form. For SMT equivalents with similar electrical specs, Microchip recommends the SMCJ110A (SMB/DO-214AB package) or SMCG110A (SMC/DO-214AB), though these lack hermetic sealing and radiation hardness. The 1N5660A's mechanical and environmental advantages are inseparable from its axial-leaded, welded-metal construction - a deliberate design choice for high-reliability applications.
1N5660A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- DO-13
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 111V
- Voltage - Breakdown (Min):
- 124V
- Voltage - Clamping (Max) @ Ipp:
- 179V
- Current - Peak Pulse (10/1000µs):
- 8.4A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- DO-13
1N5660A FAQ
1.How can I place an order for 1N5660A through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N5660A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N5660A reliable?
The price and inventory of 1N5660A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5660A is usually 5 days.
3.What payment methods are accepted for 1N5660A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5660A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N5660A?
1N5660A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N5660A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N5660A?
For technical support, including 1N5660A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5660A requirements.
6.How does Aetrix verify that 1N5660A is sourced from the original manufacturer or authorized distributors?
All 1N5660A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5660A meets industry standards.
7.What is the process for return or replacement of 1N5660A?
All 1N5660A units undergo pre-shipment inspection (PSI). If there is an issue with 1N5660A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N5660A part is unused and in its original packaging.
Return procedure for 1N5660A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N5660A Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
