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Microchip Technology 1N5660A/TR
- Part No.:
- 1N5660A/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- DO-13
- Datasheet:
-
1N5660A/TR.pdf
- Description:
- TVS DIODE 111VWM 179VC DO13
- Quantity:
- Payment:
- Shipping:
Inventory:5,525
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Product details
Overview
1N5660A/TR from Microchip Technology is a unidirectional transient voltage suppressor (TVS) diode in a hermetically sealed DO-13 metal package, designed for high-reliability surge protection in aerospace, avionics, and industrial systems. It features a 111 V rated standoff voltage (VWM), 124 V maximum clamping voltage (VC) at 179 A peak pulse current (IPP), and 1500 W peak pulse power (10/1000 µs). It is commonly deployed to protect power rails and signal lines against secondary lightning surges per IEC61000-4-5 with 2–42 Ω source impedance.
For engineers reviewing the 1N5660A/TR datasheet, 1N5660A/TR pinout, 1N5660A/TR application, or 1N5660A/TR equivalent, this device serves as a military-qualified, through-hole TVS solution where fast clamping (<100 ps), radiation hardness, and stable operation from –55°C to +175°C are critical selection criteria.
Technical Context
The 1N5660A/TR operates as a unidirectional avalanche diode, entering breakdown when reverse voltage exceeds its 117–124 V minimum/maximum breakdown voltage (V(BR)) at 1 mA test current. Its clamping action limits transient energy by diverting surge current to ground while maintaining <124 V across protected circuitry during a 10/1000 µs waveform.
It leverages a hermetic DO-13 metal-glass package with cathode-to-case polarity, enabling robust thermal dissipation (50°C/W junction-to-lead) and inherent radiation hardness per MicroNote 050. The "TR" suffix confirms tape-and-reel packaging per EIA-296, supporting automated assembly without compromising mechanical integrity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Standoff Voltage) | 111 V - Maximum continuous reverse operating voltage before conduction begins; sets minimum system rail compatibility. |
| V(BR) @ I(BR) | 117–124 V @ 1 mA - Confirmed avalanche onset range; ensures predictable turn-on under transients. |
| VC @ IPP | 124 V @ 179 A - Clamped voltage during full 1500 W surge; defines worst-case overvoltage seen by downstream ICs. |
| PPP (Peak Pulse Power) | 1500 W (10/1000 µs) - Sustains high-energy surges common in IEC61000-4-5 Class 1–4 testing with 2–42 Ω source impedance. |
| Response Time | <100 ps - Enables effective suppression of ESD (IEC61000-4-2) and EFT (IEC61000-4-4) events before damage occurs. |
| Operating Temp Range | –55°C to +175°C - Supports deployment in engine bays, avionics bays, and downhole industrial equipment. |
| Junction-to-Lead Rθ | 50°C/W - Enables reliable heat transfer to PCB copper or chassis mount; critical for repetitive surge handling. |
Pinout & Package
Package: DO-13 (DO-202AA), hermetically sealed metal-glass case with tin-lead plated leads. Cathode is electrically connected to the case and marked by a diode symbol on the body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Lead 2) | Transient current sink input | Connected to protected line; conducts surge current toward cathode/case during avalanche. |
| Cathode (Lead 1 / Case) | Ground reference terminal | Internally tied to metal case; must be soldered to low-impedance ground plane or chassis for optimal clamping performance. |
Key Features
| Feature | Design Value |
|---|---|
| Unidirectional TVS architecture | Enables precise protection of DC power rails and unidirectional signal paths without forward-conduction interference. |
| Hermetic DO-13 metal package | Provides superior moisture resistance, long-term reliability in harsh environments, and enhanced thermal conductivity vs. plastic packages. |
| MIL-PRF-19500/500 qualified ("A" suffix) | Meets JANTXV-level screening for vibration, shock, temperature cycling, and burn-in-required for defense and space programs. |
| Inherent radiation hardness | Validated per Microsemi MicroNote 050; suitable for high-altitude avionics and satellite subsystems without additional shielding. |
| Tape-and-reel packaging (TR suffix) | Enables direct use in high-volume SMT placement equipment despite through-hole form factor-reduces manual handling risk. |
Applications
| Aerospace Power Distribution | Industrial Motor Drive Controls |
|---|---|
Use Scenario: Protecting 110 VDC avionics bus inputs from induced lightning transients during flight. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between bus rail and ground to limit surge-induced overvoltage. Use Value: Clamps to ≤124 V within 100 ps, preventing latch-up or gate oxide damage in downstream DC-DC converters and FPGAs. |
Use Scenario: Safeguarding PLC I/O module power inputs against switching transients from contactor coil de-energization. IC Role / Device Role / Timing Role: Primary overvoltage suppression element on 100–120 VAC-derived DC rails. Use Value: Absorbs 1500 W surges without degradation, ensuring >100,000-cycle reliability in factory automation environments. |
| Avionics Sensor Interfaces | Railway Signaling Systems |
Use Scenario: Shielding analog sensor front-ends (e.g., pressure, temperature) in flight control computers from RF-induced transients. IC Role / Device Role / Timing Role: Low-leakage (5 µA @ 111 V) TVS placed at connector entry point to minimize signal distortion. Use Value: Maintains <5 µA standby current while delivering sub-100 ps response-preserving measurement accuracy and noise floor. |
Use Scenario: Securing 110 VDC trackside signaling power supplies against traction current surges and lightning coupling. IC Role / Device Role / Timing Role: Class 1–4 IEC61000-4-5 compliant surge protector mounted directly at DIN-rail power entry. Use Value: Withstands repeated 42 Ω-source surges up to 179 A, meeting EN 50121-3-2 immunity requirements for rolling stock. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N5660A (bulk) | Identical electrical specs and DO-13 package; differs only in packaging-no tape-and-reel. | Suitable for hand-solder or low-volume prototyping; lacks EIA-296 compliance for automated placement. | Select 1N5660A/TR when production requires reel-fed pick-and-place; choose bulk 1N5660A for bench validation. |
| SMCJ110A | Surface-mount SMC package; same 110 V VWM and 125 V VC, but lower 1000 W PPP rating and 150 A IPP. | Better suited for space-constrained PCBs; lacks hermetic seal and radiation hardness certification. | Choose SMCJ110A only if board area is constrained and MIL-spec qualification is not required. |
Compared with 1N5660A/TR, the bulk 1N5660A offers identical protection performance but no automated assembly support, while SMCJ110A trades hermetic reliability and 1500 W capability for smaller footprint-making 1N5660A/TR the sole choice for high-integrity, through-hole, radiation-hardened deployments.
Availability
1N5660A/TR is available at Aetrix Electronics and suitable for aerospace power distribution, industrial motor drive controls, avionics sensor interfaces, and railway signaling systems requiring stable component supply across extended product lifecycles.
Supply support for 1N5660A/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microchip Technology (formerly Microsemi) is a U.S.-based semiconductor company specializing in high-reliability analog, mixed-signal, and radiation-hardened components for aerospace, defense, and industrial markets.
The 1N5660A/TR belongs to Microchip's legacy JAN/JANTXV-qualified TVS diode family, engineered specifically for mission-critical surge protection where hermetic sealing, extreme temperature operation, and MIL-PRF-19500 compliance are non-negotiable.
FAQ
What is the standoff voltage (VWM) of the 1N5660A/TR, and why is it important?
The 1N5660A/TR has a rated standoff voltage (VWM) of 111 V, meaning it remains nonconductive up to this reverse DC or peak AC voltage. This value ensures compatibility with nominal 110 VDC systems while providing margin against normal operating fluctuations. Selecting a VWM ≥ system operating voltage prevents false triggering during steady-state conditions, which is essential for stable power rail protection in avionics and industrial controls.
Does the 1N5660A/TR meet military specifications, and what does the "A" suffix indicate?
Yes, the "A" suffix in 1N5660A/TR denotes compliance with MIL-PRF-19500/500 for tighter parameter tolerances and extended environmental screening. When ordered with JAN, JANTX, or JANTXV prefixes (e.g., JANTXV1N5660A), it undergoes full military qualification including temperature cycling, mechanical shock, and burn-in. The base 1N5660A/TR meets commercial-grade "A" tolerance but can be upgraded to full JANTXV level upon request.
How does the DO-13 hermetic package of the 1N5660A/TR improve reliability versus plastic TVS diodes?
The DO-13 metal-glass package of the 1N5660A/TR provides hermetic sealing that eliminates moisture ingress, prevents corrosion under thermal cycling, and maintains parameter stability over decades-critical for airborne and downhole applications. Unlike plastic packages, it achieves 50°C/W junction-to-lead thermal resistance and inherent radiation hardness per MicroNote 050, making 1N5660A/TR suitable where long-term field reliability cannot be compromised.
What IEC standards does the 1N5660A/TR support for surge immunity testing?
The 1N5660A/TR supports IEC61000-4-2 (ESD ±8 kV contact), IEC61000-4-4 (EFT ±2 kV), and IEC61000-4-5 (surge) up to Class 4 with 42 Ω source impedance. Specifically, it covers secondary lightning protection for Classes 1–4 depending on source impedance: Class 4 with 42 Ω (up to 1N5648A), Class 4 with 12 Ω (up to 1N5636A), and Class 2 with 2 Ω (up to 1N5642A). Its 1500 W rating and <100 ps response make it appropriate for all these test levels.
Can the 1N5660A/TR be used in surface-mount designs, or is it strictly through-hole?
The 1N5660A/TR is exclusively a through-hole device in the DO-13 package and is not compatible with surface-mount assembly. However, Microchip offers direct functional equivalents in SMC (e.g., SMCJ110A) and SMCG packages for SMT applications. These alternatives share similar VWM and VC ratings but differ in power rating (1000 W), package thermal performance, and qualification level-so migration requires layout and reliability revalidation.
1N5660A/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- DO-13
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 111V
- Voltage - Breakdown (Min):
- 124V
- Voltage - Clamping (Max) @ Ipp:
- 179V
- Current - Peak Pulse (10/1000µs):
- 8.4A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- DO-13
1N5660A/TR FAQ
1.How can I place an order for 1N5660A/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N5660A/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N5660A/TR reliable?
The price and inventory of 1N5660A/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5660A/TR is usually 5 days.
3.What payment methods are accepted for 1N5660A/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5660A/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N5660A/TR?
1N5660A/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N5660A/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N5660A/TR?
For technical support, including 1N5660A/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5660A/TR requirements.
6.How does Aetrix verify that 1N5660A/TR is sourced from the original manufacturer or authorized distributors?
All 1N5660A/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5660A/TR meets industry standards.
7.What is the process for return or replacement of 1N5660A/TR?
All 1N5660A/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N5660A/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N5660A/TR part is unused and in its original packaging.
Return procedure for 1N5660A/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N5660A/TR Tags
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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onsemi
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Diodes Incorporated
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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