Microchip Technology 1N5664A

Overview

1N5664A from Microchip (formerly Microsemi) is a unidirectional transient voltage suppressor (TVS) diode in a hermetically sealed DO-13 metal package, designed for high-reliability surge protection in aerospace, avionics, and industrial systems. It features a 1500 W peak pulse power rating (10/1000 µs), 146 V rated standoff voltage (V_WM), 198 V maximum clamping voltage (V_C) at 5.8 A peak pulse current, and sub-100 ps response time.

For engineers reviewing the 1N5664A datasheet, 1N5664A pinout, 1N5664A application, or 1N5664A equivalent, this device is selected for secondary lightning protection per IEC 61000-4-5 (with 2 Ω, 12 Ω, and 42 Ω source impedances), ESD/EFT immunity per IEC 61000-4-2/-4, and inductive switching transient suppression in harsh-environment power rails and signal lines.

Technical Context

The 1N5664A operates as a unidirectional avalanche diode, entering controlled breakdown above its 162 V minimum breakdown voltage (V_BR @ 1 mA) to clamp transients while maintaining <5 µA standby leakage at 146 V. Its hermetic DO-13 package ensures stable performance across -55°C to +175°C operating temperature range and inherent radiation hardness per MicroNote 050.

It delivers 1500 W non-repetitive peak pulse power with thermal resistance of 50°C/W junction-to-lead (0.375" from body), enabling robust surge handling without thermal runaway under defined pulse conditions. The cathode is internally connected to the metal case, establishing fixed polarity and grounding path integrity in PCB layout.

Key Specifications

Pinout & Package

1N5664A uses the DO-13 (DO-202AA) hermetically sealed metal-glass package. The cathode terminal is electrically bonded to the metal case, and polarity is marked by a diode symbol on the body. Lead length is 1.000–1.625 inches (25.4–41.3 mm); case diameter is 0.215–0.235 inches (5.46–5.97 mm).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar unidirectional TVS diode applications.

Compared with SMCJ150A and 1N5663A, the 1N5664A offers higher standoff voltage (146 V) and optimized clamping (198 V) for 115 VAC/200 VDC systems, while retaining hermetic reliability and radiation tolerance unavailable in plastic SMD alternatives.

Availability

1N5664A is available at Aetrix Electronics and suitable for aerospace power bus protection, industrial motor drive control, avionics signal line hardening, and energy meter communication interface applications requiring stable component supply across extended temperature and radiation environments.

Supply support for 1N5664A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microchip Technology acquired Microsemi in 2018 and maintains legacy high-reliability analog and discrete product lines, including radiation-hardened and military-qualified components.

The 1N5664A belongs to Microchip's legacy TVS diode family originally developed by Microsemi for defense, aerospace, and industrial surge protection-designed specifically for mission-critical transient suppression where hermeticity, temperature resilience, and radiation tolerance are mandatory.

FAQ

What is the maximum clamping voltage of the 1N5664A under standard test conditions?

The 1N5664A exhibits a maximum clamping voltage (V_C) of 198 V when subjected to its rated peak pulse current of 5.8 A using the 10/1000 µs waveform. This value is measured at T_A = 25°C and defines the upper voltage limit imposed on protected circuitry during surge events. The 1N5664A achieves this clamping performance while maintaining a 146 V standoff voltage, offering a 36% overvoltage margin before conduction begins.

Is the 1N5664A suitable for ESD protection per IEC 61000-4-2?

Yes, the 1N5664A is explicitly validated for ESD protection per IEC 61000-4-2 due to its sub-100 ps response time and low dynamic impedance. Its clamping behavior limits voltage excursions to ≤198 V during ±15 kV air discharge and ±8 kV contact discharge events. The hermetic DO-13 package further ensures consistent ESD performance across humidity and temperature extremes where polymer-packaged alternatives may degrade.

Does the 1N5664A have military qualification options?

Yes, the 1N5664A is available in military-qualified versions: JANTXV1N5664A meets MIL-PRF-19500/500 requirements for enhanced screening, tighter parameter tolerances, and extended temperature validation. These variants retain the same DO-13 package, electrical specs, and hermetic construction but undergo additional environmental and life testing to support defense and aerospace programs requiring DLA-approved components.

How does the DO-13 package of the 1N5664A affect PCB layout and thermal design?

The DO-13 package of the 1N5664A requires through-hole mounting with the cathode lead (Lead 1) and metal case electrically common-mandating direct low-impedance connection to the system ground plane or chassis. Thermal resistance is specified at 50°C/W junction-to-lead (0.375" from body), so PCB copper area and trace width must follow Microchip's recommended 4 mm² pads and 1 mm wide × 25 mm long traces to achieve rated 1500 W pulse capability without overheating.

What is the rated standoff voltage (V_WM) and why is it critical for selecting the 1N5664A?

The 1N5664A has a rated standoff voltage (V_WM) of 146 V, meaning it remains non-conductive up to this reverse DC or peak AC voltage. This parameter is critical because it must exceed the maximum continuous operating voltage of the protected line-e.g., 115 VAC RMS yields ~162 V peak, so 1N5664A is appropriate for 115 VAC-derived DC buses but not for 230 VAC systems. Selecting a V_WM too close to operating voltage risks premature conduction and leakage-induced heating.