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Diodes Incorporated 1N5711W-13
- Part No.:
- 1N5711W-13
- Manufacturer:
- Diodes Incorporated
- Category:
- RF Diodes
- Package:
- SOD-123
- Datasheet:
-
1N5711W-13.pdf
- Description:
- DIODE SCHOTTKY 70V 333MW SOD123
- Quantity:
- Payment:
- Shipping:
Inventory:8,908
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Product details
Overview
1N5711W-13 from Diodes Incorporated is a surface-mount Schottky barrier diode optimized for high-frequency switching applications, featuring 70 V peak repetitive reverse voltage, 15 mA maximum forward current, 0.41 V typical forward voltage at 1.0 mA, 1.0 ns reverse recovery time, and 2.0 pF junction capacitance at 0 V - deployed in RF detector, sample-and-hold, and high-speed logic clamp circuits.
For engineers reviewing the 1N5711W-13 datasheet, 1N5711W-13 pinout, 1N5711W-13 application, or 1N5711W-13 equivalent, key selection criteria include low VF for signal integrity, ultrafast trr for GHz-range switching, minimal CT for impedance matching, and SOD-123 thermal performance under pulsed RF loads.
Technical Context
This Schottky diode uses a planar guard-ring structure to suppress edge breakdown and improve transient robustness without compromising switching speed. Its metal-semiconductor junction enables sub-nanosecond recovery and low forward conduction loss, making it suitable for RF envelope detection and fast clamping where minority-carrier storage delay must be eliminated.
The device operates across –55 °C to +125 °C junction temperature with 300 °C/W junction-to-ambient thermal resistance on FR-4 PCBs using recommended pad layout. Reverse leakage remains ≤200 nA at 50 V bias, supporting stable DC blocking in low-power analog front-ends.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 70 V - supports DC blocking and transient suppression up to 70 V peak reverse stress without avalanche breakdown |
| VF @ 1.0 mA | 0.41 V - enables low-loss signal rectification in weak RF input stages with minimal voltage drop |
| trr | 1.0 ns - ensures clean zero-crossing switching in >500 MHz sampling circuits and high-speed logic interfaces |
| CT @ 0 V | 2.0 pF - maintains impedance stability and minimizes parasitic loading in 50 Ω RF paths |
| IR @ 50 V | 200 nA - guarantees negligible leakage current in precision DC-coupled detector and clamp applications |
| Pd | 333 mW - defines absolute steady-state power limit on standard FR-4 layout; derates linearly above 25 °C ambient |
Pinout & Package
Package: SOD-123 - surface-mount plastic case (UL 94V-0), 3.55–3.85 mm length × 2.55–2.85 mm width × 1.40–1.70 mm height, cathode band marking, matte tin lead-free plating option available.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to lower-potential node in rectifier/clamp; requires low-inductance trace routing for RF stability |
| Cathode | Forward current exit / reverse voltage reference | Marked by band; ties to higher-potential or ground-referenced node; critical for polarity-sensitive detector topologies |
Key Features
| Feature | Design Value |
|---|---|
| Guard ring construction | Prevents premature edge breakdown under high dv/dt, enabling reliable operation in fast-switching RF environments |
| Low forward voltage | 0.41 V at 1 mA allows accurate detection of sub-100 mV RF signals without active amplification |
| Ultrafast recovery | 1.0 ns trr eliminates minority-carrier tail, preventing false triggering in synchronous sampling circuits |
| Low junction capacitance | 2.0 pF at 0 V preserves signal rise time and bandwidth in 50 Ω transmission line interfaces |
Applications
| RF Detector Circuit | High-Speed Logic Clamp |
|---|---|
Use Scenario: Demodulating AM/FM broadcast or ISM-band RF signals into baseband envelope for RSSI or control feedback. IC Role / Device Role / Timing Role: Passive rectifier converting RF AC to DC voltage; acts as nonlinear element with no bias supply required. Use Value: 0.41 V VF enables detection sensitivity down to –20 dBm; 1.0 ns trr prevents distortion at carrier frequencies up to 1 GHz. | Use Scenario: Preventing TTL/CMOS input overvoltage during hot-plug or ESD transients in digital I/O buffers. IC Role / Device Role / Timing Role: Fast-acting shunt clamp limiting input voltage to <0.7 V above rail; responds within nanoseconds. Use Value: 2.0 pF CT avoids signal degradation on >100 MHz data lines; guard ring withstands 2 kV HBM ESD pulses. |
| Sample-and-Hold Input Stage | Low-Power Oscillator Bias Network |
Use Scenario: Isolating hold capacitor from op-amp output during acquisition phase in precision ADC front-ends. IC Role / Device Role / Timing Role: Bidirectional switch controlled by clock-driven forward/reverse bias; blocks backfeed during hold. Use Value: 1.0 ns trr ensures <10 ps aperture jitter; 200 nA IR prevents capacitor discharge drift over 100 µs hold time. | Use Scenario: Providing temperature-stable bias current to Colpitts or Clapp oscillator transistor bases in IoT sensor nodes. IC Role / Device Role / Timing Role: Constant-current source via series resistor + Schottky drop; sets quiescent point independent of VBE variation. Use Value: 0.41 V VF offers tighter bias voltage control than silicon diodes; –55 °C to +125 °C operation sustains oscillator startup across industrial environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N5711-TP (Micro Commercial) | Same SOD-123 package; VF = 0.45 V @ 1 mA; trr = 1.5 ns; IR = 500 nA @ 50 V | Slightly higher leakage and slower recovery reduce accuracy in RF detectors above 500 MHz | Select when cost sensitivity outweighs sub-ns timing or ultra-low IR requirements |
| BAT54C (ON Semiconductor) | Dual common-cathode configuration in SOT-23; VF = 0.33 V @ 10 mA; CT = 10 pF @ 0 V; trr = 5 ns | Higher capacitance limits use to <200 MHz; dual topology suits level-shifting but not single-diode detector layouts | Choose for space-constrained dual-clamp designs where 10 pF CT is acceptable |
Compared with 1N5711W-13, 1N5711-TP trades 0.04 V higher VF and 0.5 ns slower trr for broader distributor availability, while BAT54C offers lower VF at the cost of 5× higher CT and incompatible pinout - making 1N5711W-13 optimal for single-device, GHz-capable RF signal conditioning.
Availability
1N5711W-13 is available at Aetrix Electronics and suitable for RF detector modules, high-speed logic protection circuits, and sample-and-hold amplifier front-ends requiring stable component supply with consistent parametric performance across production lots.
Supply support for 1N5711W-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance, high-reliability components for power management, signal integrity, and protection applications.
The 1N5711W belongs to Diodes' legacy Schottky diode product line, engineered specifically for RF and high-speed analog signal path applications demanding minimal forward voltage, ultrafast switching, and predictable low-capacitance behavior.
FAQ
Is the 1N5711W-13 RoHS-compliant and halogen-free?
Yes. The 1N5711W-13 is manufactured with lead-free matte tin plating and complies with RoHS Directive 2011/65/EU and JEDEC JS709B halogen-free requirements. Full compliance documentation, including material declarations and test reports, is available upon request from Aetrix Electronics.
What is the maximum allowable soldering temperature profile for the SOD-123 package?
The SOD-123 package supports standard reflow profiles per IPC-J-STD-020D. Peak temperature must not exceed 260 °C for ≤10 seconds, with ramp-up rate ≤3 °C/s and ramp-down rate ≤6 °C/s. Preheat to 150 °C for 60–120 seconds before reflow to avoid thermal shock.
Can the 1N5711W-13 replace the 1N5711 in existing designs?
Yes, with identical electrical specs and SOD-123 footprint. The "W" suffix denotes wafer-level testing and tighter parameter screening versus the original 1N5711, resulting in improved VF consistency and lower IR distribution - no layout or firmware changes are needed for drop-in replacement.
Does Diodes Incorporated provide SPICE models for the 1N5711W-13?
Yes. An industry-standard PSpice-compatible model (DS11015 Rev. 6) is published on Diodes' website and includes temperature-dependent VF, CT, and trr behavior. The model has been validated against measured forward/reverse IV curves and capacitance vs. voltage sweeps from –55 °C to +125 °C.
1N5711W-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOD-123
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Diode Type:
- Schottky - Single
- Voltage - Peak Reverse (Max):
- 70V
- Current - Max:
- 15 mA
- Capacitance @ Vr, F:
- 2pF @ 0V, 1MHz
- Resistance @ If, F:
- -
- Power Dissipation (Max):
- 333 mW
- Operating Temperature:
- -55°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Supplier Device Package:
- SOD-123
1N5711W-13 FAQ
1.How can I place an order for 1N5711W-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N5711W-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N5711W-13 reliable?
The price and inventory of 1N5711W-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5711W-13 is usually 5 days.
3.What payment methods are accepted for 1N5711W-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5711W-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N5711W-13?
1N5711W-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N5711W-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N5711W-13?
For technical support, including 1N5711W-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5711W-13 requirements.
6.How does Aetrix verify that 1N5711W-13 is sourced from the original manufacturer or authorized distributors?
All 1N5711W-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5711W-13 meets industry standards.
7.What is the process for return or replacement of 1N5711W-13?
All 1N5711W-13 units undergo pre-shipment inspection (PSI). If there is an issue with 1N5711W-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N5711W-13 part is unused and in its original packaging.
Return procedure for 1N5711W-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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