Diodes Incorporated 1N5711W-7-F

Overview

1N5711W-7-F from Diodes Incorporated is a surface-mount Schottky barrier diode optimized for high-frequency switching applications, featuring a 70 V peak repetitive reverse voltage, 15 mA maximum forward current, 0.41 V typical forward voltage at 1.0 mA, 2.0 pF total capacitance at 0 V, and 1.0 ns reverse recovery time. It is used in RF detector circuits, sample-and-hold systems, and low-power signal demodulation where fast switching and low forward drop are critical.

For engineers reviewing the 1N5711W-7-F datasheet, 1N5711W-7-F pinout, 1N5711W-7-F application, or 1N5711W-7-F equivalent, key selection criteria include its SOD-123 package compatibility, sub-1 ns recovery performance, low leakage (<200 nA at 50 V), guard ring construction for transient robustness, and suitability for automated SMT assembly in space-constrained RF front-ends.

Technical Context

This Schottky diode employs a planar epitaxial structure with guard ring termination to suppress edge breakdown and improve transient immunity. Its low junction capacitance (2.0 pF) and ultrafast recovery (1.0 ns) stem from minimized minority carrier storage and low series resistance design.

The device operates across –55°C to +125°C and delivers stable forward conduction down to 1.0 mA with VF ≤ 0.41 V, enabling precision signal detection in battery-powered instrumentation and low-voltage RF receivers without significant DC offset error.

Key Specifications

Pinout & Package

Package: SOD-123 - compact 2-pin surface-mount plastic case (1.55 mm × 2.65 mm × 1.05 mm), matte tin-plated terminals, cathode band polarity marking, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Compared with SBAT54LT1G and BAT54WS, the 1N5711W-7-F uniquely balances 70 V blocking, sub-0.45 V low-current VF, and 1 ns trr-making it the only option among the three qualified for wide-dynamic-range RF detectors in industrial telemetry and automotive radar preprocessing.

Availability

1N5711W-7-F is available at Aetrix Electronics and suitable for RF detector circuits, sample-and-hold clamps, and low-power sensor interfaces requiring stable component supply, consistent parametric performance across temperature, and full RoHS 3 compliance.

Supply support for 1N5711W-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The 1N5711W belongs to Diodes' high-frequency Schottky diode product line, engineered specifically for RF signal processing, precision detection, and fast-switching clamp applications in communication and sensing systems.

FAQ

Is the 1N5711W-7-F suitable for automotive applications?

Yes-the 1N5711W-7-F is manufactured in IATF 16949 certified facilities and supports PPAP documentation. While not pre-qualified to AEC-Q101, its –55°C to +125°C operating range, guard ring construction, and RoHS 3 compliance make it suitable for non-safety-critical automotive subsystems such as infotainment RF front-ends and body-control sensor interfaces when validated per customer requirements.

What is the thermal resistance of the 1N5711W-7-F in standard FR-4 layout?

The thermal resistance from junction to ambient (RθJA) is 300°C/W when mounted on an FR-4 PCB using Diodes' recommended SOD-123 pad layout. This value assumes no copper pour or thermal vias; adding 10 mm² of 1 oz copper connected to both terminals reduces RθJA by ~40%, improving power handling in sustained 15 mA operation.

Does the 1N5711W-7-F have a specified reverse recovery charge (Qrr)?

No-Qrr is not specified in the DS11015 datasheet. The device's 1.0 ns trr is measured under standardized conditions (IF = IR = 5.0 mA, Irr = 0.1 × IR, RL = 100 Ω), and its Schottky architecture inherently yields negligible stored charge. For designs sensitive to Qrr (e.g., synchronous rectifiers), consult Diodes' application note AP02004 for empirical characterization methods.

Can the 1N5711W-7-F replace the 1N5711 in through-hole designs?

No-it is not a direct replacement due to package incompatibility. The 1N5711 uses DO-35 glass axial packaging, while the 1N5711W-7-F uses SOD-123 surface-mount packaging. Layout redesign, solder paste profile adjustment, and reflow validation are required. Electrical parameters are closely matched, but thermal and mechanical mounting behavior differs significantly.