Diodes Incorporated 1N5711WS-13

Overview

1N5711WS-13 from Diodes Incorporated is a surface-mount Schottky barrier diode with 70 V peak repetitive reverse voltage, 15 mA forward continuous current, and 1.0 ns reverse recovery time, optimized for high-frequency switching in RF detector, sample-and-hold, and low-power signal demodulation circuits.

For engineers reviewing the 1N5711WS-13 datasheet, 1N5711WS-13 pinout, 1N5711WS-13 application, or 1N5711WS-13 equivalent, key selection criteria include ultra-low forward voltage (0.41 V @ 1 mA), sub-2 pF capacitance at 0 V, and SOD-323 package compatibility with high-density PCB layouts.

Technical Context

This Schottky diode uses a guard ring construction to enhance transient voltage immunity and suppress leakage-induced errors in precision analog front-ends. Its low junction capacitance (2.0 pF @ 0 V, 1 MHz) and fast recovery (1.0 ns) enable operation beyond 1 GHz in mixer and detector stages.

The device operates across –55 °C to +125 °C with thermal resistance of 650 °C/W on FR-4 board, and exhibits reverse leakage ≤200 nA at 50 V - critical for battery-powered sensor nodes requiring minimal standby current drain.

Key Specifications

Pinout & Package

SOD-323 plastic surface-mount package (UL 94V-0 rated), 2.3–2.7 mm length × 1.6–1.8 mm width × 1.2–1.4 mm height; cathode identified by SA marking and band.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Compared with BAT54WS-7-F and NSR0230P2T5G, the 1N5711WS-13 uniquely balances 70 V blocking, sub-nanosecond switching, and sub-2 pF capacitance - making it irreplaceable in wide-dynamic-range RF detection and high-voltage sample-and-hold designs.

Availability

1N5711WS-13 is available at Aetrix Electronics and suitable for RF detector circuits, low-power sensor interfaces, and high-speed sample-and-hold applications requiring stable component supply and consistent parametric performance across temperature.

Supply support for 1N5711WS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and Malaysia.

The 1N5711WS belongs to Diodes' high-frequency Schottky diode product line, engineered specifically for RF and microwave signal conditioning where low VF, low CT, and fast trr are non-negotiable.

FAQ

What is the maximum reverse voltage the 1N5711WS-13 can block continuously?

The 1N5711WS-13 has a peak repetitive reverse voltage (VRRM) of 70 V, verified per JEDEC JESD201 standards. This rating applies under pulsed conditions with duty cycle ≤1% and Tj ≤125 °C. Continuous DC blocking at 70 V is permissible only if power dissipation remains within the 150 mW limit and ambient temperature stays below 75 °C per the derating curve.

Does the 1N5711WS-13 have lead-free termination?

Yes - the "-13" suffix indicates tape-and-reel packaging with matte tin (Pb-free) plating compliant with RoHS Directive 2011/65/EU and JEDEC J-STD-609 Class 1. The SOD-323 terminals meet MIL-STD-202 Method 208 solderability requirements and support both SnPb and Pb-free reflow profiles.

Can the 1N5711WS-13 replace the 1N5711 in through-hole designs?

No - the 1N5711WS-13 is a surface-mount SOD-323 device, while the legacy 1N5711 uses DO-35 axial package. Mechanical incompatibility prevents direct substitution. For drop-in replacement, consider the 1N5711-T, which shares the DO-35 outline but differs in thermal resistance and mounting method.

How does temperature affect reverse leakage in the 1N5711WS-13?

Reverse leakage (IR) increases exponentially with junction temperature: at 25 °C, IR ≤200 nA @ 50 V; at 125 °C, IR rises to ≤10 µA under same conditions. This behavior is documented in Figure 2 of the DS31033 datasheet and must be accounted for in high-temperature sensor bias networks where leakage could offset reference voltages.