Diodes Incorporated 1N5711WS-7-F

Overview

1N5711WS-7-F from Diodes Incorporated is a surface-mount Schottky barrier diode optimized for high-frequency signal detection, RF mixer applications, and low-current switching in portable electronics. It delivers 70 V peak repetitive reverse voltage, ≤0.41 V forward voltage at 1 mA, 2.0 pF capacitance at 0 V, 1.0 ns reverse recovery time, and operates from –55 °C to +125 °C in SOD323 package.

For engineers reviewing the 1N5711WS-7-F datasheet, 1N5711WS-7-F pinout, 1N5711WS-7-F application, or 1N5711WS-7-F equivalent, key selection criteria include ultra-low VF for battery-sensitive circuits, sub-2 pF junction capacitance for RF signal integrity, fast tRR for high-speed demodulation, and JEDEC-qualified reliability in automotive-grade environments.

Technical Context

This Schottky diode uses guard ring construction to suppress transient-induced leakage and improve ruggedness under voltage surges. Its low-barrier metal-semiconductor junction enables fast carrier injection/extraction, resulting in 1.0 ns reverse recovery and minimal stored charge.

The SOD323 package supports automated placement with 0.30 mm lead width and 1.70 mm body width, while its 650 °C/W thermal resistance requires careful PCB copper area management for sustained 15 mA operation at elevated ambient temperatures.

Key Specifications

Pinout & Package

Package: SOD323 - 2-pin surface-mount plastic package (1.30 mm × 1.70 mm × 0.90 mm), cathode-banded polarity, matte tin–annealed alloy 42 leadframe, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Compared with SBAT54LT1G and BAT54WS, the 1N5711WS-7-F provides the lowest forward voltage and tightest capacitance control in the 70 V SOD323 class-making it preferred for RF detector linearity, battery runtime-critical wearables, and high-dV/dt automotive clamping where leakage and speed are co-constrained.

Availability

1N5711WS-7-F is available at Aetrix Electronics and suitable for RF signal detection, low-power sensor interface, and high-speed sampling gate applications requiring stable component supply across automotive, industrial, and consumer design cycles.

Supply support for 1N5711WS-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in ASE, J-Devices, and internal fabs.

The 1N5711WS belongs to Diodes' high-frequency Schottky diode product line, engineered specifically for RF detection, mixing, and low-leakage switching in space-constrained, battery-operated, and automotive-qualified systems.

FAQ

What is the maximum reverse voltage this diode can block reliably?

The 1N5711WS-7-F has a peak repetitive reverse voltage (V_RRM) rating of 70 V, verified per JEDEC standards. It maintains <200 nA leakage at 50 V reverse bias and exhibits no breakdown up to 70 V under pulsed conditions per DS31033 Rev. 14–2. Derating is not required below 125 °C ambient.

Does this diode meet automotive qualification requirements?

The 1N5711WS-7-F is JEDEC-qualified for high reliability and manufactured in IATF 16949-certified facilities. While not AEC-Q101 certified itself, its process and testing align with AEC-Q200 for passive components. For full automotive qualification, Diodes offers the Q-suffix variant (e.g., 1N5711WSQ-7-F) with PPAP documentation.

How does the guard ring construction improve performance?

The guard ring physically isolates the active Schottky junction from the silicon edge, reducing surface leakage paths and suppressing avalanche initiation during fast transients. This yields stable 200 nA IR up to 50 V and improved robustness against ESD events common in RF front-end PCBs.

Can this diode be used in place of a standard 1N4148 in high-frequency circuits?

No-while both are small-signal diodes, the 1N5711WS-7-F is a Schottky with 0.41 V V_F and 2.0 pF C_T, whereas the 1N4148 is a silicon PN diode with ~0.7 V V_F and ~4 pF C_T. Substituting it into 1N4148 positions may cause unexpected forward conduction or insufficient reverse blocking in logic-level circuits.