My Inquiry
My Account
Vishay General Semiconductor - Diodes Division 1N6271AHE3/51
- Part No.:
- 1N6271AHE3/51
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-201AA, DO-27, Axial
- Datasheet:
-
1N6271AHE3/51.pdf
- Description:
- TVS DIODE 8.55VWM 14.5VC 1.5KE
- Quantity:
- Payment:
- Shipping:
Inventory:6,272
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
1N6271AHE3/51 from Vishay General Semiconductor is a uni-directional Transient Voltage Suppressor (TVS) diode designed for primary overvoltage protection in DC power rails and signal lines. It features a 10 V standoff voltage (VWM), 9.5–10.5 V breakdown voltage (VBR) at 1 mA, 14.5 V clamping voltage (VC) at 103 A peak pulse current, and 1500 W peak pulse power rating with 10/1000 µs waveform - used to safeguard MOSFETs, ICs, and sensor interfaces in automotive and industrial control systems.
For engineers reviewing the 1N6271AHE3/51 datasheet, 1N6271AHE3/51 pinout, 1N6271AHE3/51 application, or 1N6271AHE3/51 equivalent, key selection criteria include its AEC-Q101 qualification, 175 °C max junction temperature, glass-passivated junction, RoHS-compliant matte tin leads, and compatibility with J-STD-002 solderability standards.
Technical Context
This TVS diode operates as a voltage-clamped shunt protector: under normal conditions it presents high impedance (>1 MΩ at 8.55 V), but triggers into low-impedance conduction when transient voltage exceeds its 9.5–10.5 V breakdown threshold. Its 1500 W peak pulse power handling is defined per 10/1000 µs waveform with 0.01% duty cycle, and thermal performance is governed by RθJA = 75 °C/W and RθJL = 15.4 °C/W.
The device uses a molded epoxy case (Case Style 1.5KE) with cathode band marking, supports 200 A non-repetitive forward surge current (IFSM), and exhibits 0.073 %/°C temperature coefficient of VBR. It is rated for -55 °C to +175 °C operating junction temperature and meets UL 94 V-0 flammability requirements.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 8.55 V - maximum continuous reverse working voltage before leakage exceeds 10 μA; defines safe DC operating margin. |
| VBR (Breakdown Voltage) | 9.5–10.5 V at 1 mA - precise voltage threshold where device transitions from high- to low-impedance state. |
| VC (Clamping Voltage) | 14.5 V at 103 A - maximum voltage seen by protected circuit during full-rated transient event. |
| PPPM (Peak Pulse Power) | 1500 W - energy-handling capability for 10/1000 µs transients; enables robust lightning and ESD surge immunity. |
| IPPM (Peak Pulse Current) | 103 A - maximum transient current the device safely diverts without failure. |
| TJ max | +175 °C - enables operation in under-hood automotive and high-temperature industrial environments. |
| AEC-Q101 Qualified | Yes - validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing. |
Pinout & Package
Package: Case Style 1.5KE - axial-leaded, molded epoxy body with cathode band marking; overall dimensions 5.3 mm × 5.3 mm × 9.5 mm (0.210″ × 0.210″ × 0.375″); RoHS-compliant matte tin-plated leads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / transient return path | Connected to lower-potential side (e.g., GND or return rail); conducts during positive transients on cathode side. |
| Cathode | Protected line connection / transient injection point | Marked with color band; connected to line being protected (e.g., 12 V supply or CAN_H); clamps voltage to ≤14.5 V during overvoltage events. |
Key Features
| Feature | Design Value |
|---|---|
| Glass-passivated chip junction | Enables stable VBR tolerance and long-term reliability under thermal cycling and humidity stress. |
| 1500 W peak pulse power (10/1000 µs) | Supports IEC 61000-4-5 Level 4 surge immunity (4 kV line-to-ground) in properly filtered circuits. |
| AEC-Q101 qualification | Validates suitability for automotive powertrain, body electronics, and ADAS modules requiring zero-failure field performance. |
| Low incremental surge resistance | Minimizes clamping voltage overshoot during fast-rising transients (e.g., ISO 7637-2 pulse 1/2a/5a). |
| J-STD-002 solderable leads | Ensures robust reflow and wave solder joint integrity in automated PCB assembly processes. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
|
Use Scenario: Protecting 12 V battery-fed ECUs against load dump (ISO 16750-2) and alternator transients. IC Role / Device Role: Shunt clamping element placed between power rail and ground, triggered by >10 V excursions. Use Value: Limits rail voltage to ≤14.5 V during 100 A/1500 W surges, preventing damage to MCU power supplies and CAN transceivers. |
Use Scenario: Safeguarding analog outputs of pressure/temperature sensors exposed to cable discharge events. IC Role / Device Role: Low-capacitance (<100 pF) uni-directional clamp on 0–5 V output lines referenced to system ground. Use Value: Clamps ESD strikes (IEC 61000-4-2 ±8 kV contact) within <1 ns while adding <0.1 V offset in normal operation. |
| DC Motor Drive Back-EMF Suppression | Telecom Line Card Surge Protection |
|
Use Scenario: Absorbing inductive kickback from brushed DC motors in HVAC actuators and seat controls. IC Role / Device Role: Uni-directional TVS across motor terminals, conducting only during negative flyback spikes. Use Value: Dissipates 1500 W pulses without degradation, enabling compact motor driver designs without snubber RC networks. |
Use Scenario: Front-end protection for Ethernet PHYs and PoE injectors subjected to lightning-induced surges on twisted-pair cables. IC Role / Device Role: Primary-level clamp on DC bias lines (e.g., +48 V PoE feed), coordinated with secondary GDT/gas tube stages. Use Value: Provides fast-response first-stage clamping (1 ns) with 14.5 V ceiling, reducing stress on downstream TVS arrays and TSS devices. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ10A | Same VWM (8.55 V) and VC (17.0 V), but lower PPPM (600 W) and smaller SMB package (3.5 mm × 4.5 mm). | Lower power handling limits use to sub-50 A surge environments; not suitable for ISO 16750-2 load dump. | Select when board space is constrained and surge threat level is limited to IEC 61000-4-5 Level 2 (2 kV). |
| 1.5KE10AHE3_A | Identical electrical specs and 1.5KE package; differs only in revision code ("A" vs "HE3/51" tape-and-reel packaging variant). | No functional difference; same AEC-Q101 qualification, thermal ratings, and clamping behavior. | Direct form-fit-function replacement; preferred for new designs using standard 1400-piece reels. |
Compared with 1N6271AHE3/51, SMBJ10A offers space savings at the cost of 60% lower surge energy capacity, while 1.5KE10AHE3_A delivers identical protection performance in an alternate packaging configuration - making it ideal for production continuity when reel logistics differ.
Availability
1N6271AHE3/51 is available at Aetrix Electronics and suitable for automotive ECU design, industrial sensor interface development, and telecom line card prototyping requiring stable component supply and AEC-Q101 traceability.
Supply support for 1N6271AHE3/51 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability, power efficiency, and automotive-grade validation.
The 1N6271AHE3/51 belongs to Vishay's TRANSZORB® TVS family, engineered specifically for high-energy transient suppression in harsh-environment applications where failure is not acceptable - including engine control, braking systems, and factory automation.
FAQ
What is the clamping voltage of the 1N6271AHE3/51 under full-rated surge conditions?
The 1N6271AHE3/51 has a maximum clamping voltage (VC) of 14.5 V at 103 A peak pulse current with a 10/1000 µs waveform. This value is measured per JEDEC standard test conditions and represents the highest voltage the protected circuit will experience during a full 1500 W transient event. The 1N6271AHE3/51 maintains this clamping performance across its qualified temperature range (-55 °C to +175 °C), with minimal derating up to 125 °C.
Is the 1N6271AHE3/51 suitable for automotive applications?
Yes, the 1N6271AHE3/51 is AEC-Q101 qualified and explicitly rated for automotive use, including under-hood environments. It meets requirements for temperature cycling, high-temperature reverse bias (HTRB), and mechanical shock. Its 175 °C maximum junction temperature and glass-passivated junction ensure stability in engine control units, body controllers, and ADAS modules. The 1N6271AHE3/51 is commonly deployed for ISO 16750-2 load dump protection and ISO 7637-2 pulse suppression.
How does the 1N6271AHE3/51 differ from bi-directional TVS diodes like 1N6271CA?
The 1N6271AHE3/51 is uni-directional and features a cathode band for polarity-sensitive placement - it conducts only during reverse-biased overvoltage events on the cathode side. In contrast, 1N6271CA is bi-directional with no polarity marking and clamps transients of either polarity. The 1N6271AHE3/51 offers tighter VBR tolerance (9.5–10.5 V) and lower VF (3.5 V at 100 A) than its bi-directional counterpart, making it preferred for DC rail protection where forward conduction must be minimized.
What is the thermal resistance of the 1N6271AHE3/51, and how does it affect PCB layout?
The 1N6271AHE3/51 has a typical junction-to-lead thermal resistance (RθJL) of 15.4 °C/W and junction-to-ambient (RθJA) of 75 °C/W. To maintain reliability under repetitive surges, PCB layout must maximize copper area connected to both leads - especially the cathode - using ≥25 mm² of 2 oz copper per lead. The 1N6271AHE3/51's axial package requires symmetric lead length (≤9.5 mm) and avoids thermal isolation; insufficient copper causes junction temperature to exceed 175 °C during sustained 6.5 W dissipation.
Can the 1N6271AHE3/51 be used in parallel for higher surge current handling?
Yes, multiple 1N6271AHE3/51 devices can be paralleled to increase total IPPM, but only with careful layout: matched trace lengths (<1 mm difference), identical thermal environment, and individual series inductance minimization. Due to VBR tolerance (±5%), current sharing is uneven without balancing resistors (0.1 Ω, 1 W each). For most designs, selecting a higher-power part (e.g., 3KP10A) is more reliable than paralleling 1N6271AHE3/51 units - which remain best suited for single-point, high-precision clamping.
1N6271AHE3/51 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-201AA, DO-27, Axial
- Series:
- TransZorb®
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 8.55V
- Voltage - Breakdown (Min):
- 9.5V
- Voltage - Clamping (Max) @ Ipp:
- 14.5V
- Current - Peak Pulse (10/1000µs):
- 103A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 1.5KE
1N6271AHE3/51 FAQ
1.How can I place an order for 1N6271AHE3/51 through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6271AHE3/51 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6271AHE3/51 reliable?
The price and inventory of 1N6271AHE3/51 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6271AHE3/51 is usually 5 days.
3.What payment methods are accepted for 1N6271AHE3/51?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6271AHE3/51 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6271AHE3/51?
1N6271AHE3/51 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6271AHE3/51 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6271AHE3/51?
For technical support, including 1N6271AHE3/51 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6271AHE3/51 requirements.
6.How does Aetrix verify that 1N6271AHE3/51 is sourced from the original manufacturer or authorized distributors?
All 1N6271AHE3/51 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6271AHE3/51 meets industry standards.
7.What is the process for return or replacement of 1N6271AHE3/51?
All 1N6271AHE3/51 units undergo pre-shipment inspection (PSI). If there is an issue with 1N6271AHE3/51, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6271AHE3/51 part is unused and in its original packaging.
Return procedure for 1N6271AHE3/51:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N6271AHE3/51 Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
