onsemi 1N6273ARL4G

Overview

1N6273ARL4G from ON Semiconductor is a unidirectional 1500 W Mosorb transient voltage suppressor (TVS) diode designed for parallel clamping protection of sensitive electronics against high-energy transients. It features a 10.2 V working peak reverse voltage (VRWM), 12 V breakdown voltage (VBR) at 1 mA test current, and clamps to ≤16.7 V at 90 A peak pulse current - suitable for protecting power supply rails and I/O lines in industrial power supplies and communication interfaces.

For engineers reviewing the 1N6273ARL4G datasheet, pinout, applications, or equivalent options, key selection criteria include its 1500 W peak pulse power rating, sub-1 ns response time, UL 497B recognition for isolated loop circuit protection, low zener impedance, and Pb-free axial leaded Surmetic package compatibility with automated tape-and-reel assembly.

Technical Context

The 1N6273ARL4G operates as a unidirectional avalanche-clamping TVS diode, conducting only when reverse voltage exceeds its 12 V breakdown threshold. Its fast turn-on (<1 ns) and low dynamic impedance ensure rapid voltage limiting during ESD or lightning-induced surges.

It is rated for 1500 W nonrepetitive peak pulse power (1 ms waveform), with thermal resistance of 20 °C/W (junction-to-lead), steady-state power dissipation of 5.0 W at TL ≤ 75 °C, and maximum forward surge current of 200 A (8.3 ms half-sine). The device meets Class 3 ESD immunity (>16 kV HBM) and UL 497B for telecom and process control loop protection.

Key Specifications

Pinout & Package

Package: Axial-leaded Surmetic plastic case (Case 41A), Pb-free, RoHS-compliant, cathode indicated by band. Suitable for through-hole mounting or automated tape-and-reel placement (1500/reel).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Compared with SMBJ12A and 1N6273A, the 1N6273ARL4G uniquely combines tape-and-reel automation readiness, UL 497B certification for loop-powered systems, and full 1500 W surge capability in an axial leaded form factor - making it optimal for high-reliability industrial production where regulatory compliance and assembly efficiency are both critical.

Availability

1N6273ARL4G is available at Aetrix Electronics and suitable for industrial power supplies, RS-485 communication interfaces, medical equipment power entry circuits, and programmable logic controller I/O modules requiring stable component supply and certified surge protection.

Supply support for 1N6273ARL4G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor (now onsemi) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The 1N6273ARL4G belongs to the 1N6267A Series of Mosorb TVS diodes - engineered specifically for high-reliability transient suppression in industrial control, medical, and communications infrastructure where UL recognition, surge robustness, and long-term stability are mandatory.

FAQ

What is the clamping voltage of the 1N6273ARL4G at its rated peak pulse current?

The 1N6273ARL4G clamps to a maximum of 16.7 V at its rated peak pulse current of 90 A (1 ms waveform). This value is specified in the Electrical Characteristics table and reflects worst-case voltage seen by protected circuitry during a full-rated surge event. The low clamping ratio (VC/VBR ≈ 1.39) ensures effective protection without excessive overvoltage stress on downstream components.

Is the 1N6273ARL4G compliant with UL 497B, and what does that mean for system design?

Yes, the 1N6273ARL4G is UL 497B recognized (File #116110, QVGV2 category) for isolated loop circuit protection. This certification validates performance in strike voltage breakdown, endurance conditioning, dielectric withstand, and discharge testing - enabling direct use in telecom and industrial loop-powered systems without additional external certification burden. It confirms suitability for protecting secondary-side circuits referenced to isolated grounds.

What is the maximum steady-state power dissipation for the 1N6273ARL4G, and how does thermal derating work?

The 1N6273ARL4G has a steady-state power dissipation rating of 5.0 W at lead temperature (TL) ≤ 75 °C, derating linearly at 20 mW/°C above that point. Its junction-to-lead thermal resistance is 20 °C/W, meaning a 100 °C TL rise above ambient corresponds to 5 W dissipation. For continuous operation, designers must ensure adequate lead heatsinking and ambient temperature control - especially in enclosed industrial enclosures.

Does the 1N6273ARL4G have bidirectional capability, and how is polarity identified?

No, the 1N6273ARL4G is strictly unidirectional. Polarity is marked by a cathode band on the body - the banded end is the cathode and must be connected to the line being protected (e.g., +12 V rail), while the anode connects to ground or reference. Bidirectional variants (e.g., 1.5KE12CA) exist in the same family but require explicit "CA" suffix and are electrically tested in both directions.

What is the leakage current specification for the 1N6273ARL4G at its working voltage?

The 1N6273ARL4G exhibits a maximum reverse leakage current of 5 µA at its working peak reverse voltage (VRWM) of 10.2 V. This ultra-low leakage ensures minimal power loss and no measurable loading effect on 12 V logic rails or sensor reference voltages - critical for battery-powered or precision analog subsystems where quiescent current matters.