Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division 1N6276AHE3_B/C

Part No.:
1N6276AHE3_B/C
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-201AA, DO-27, Axial
Datasheet:
Aetrix1N6276AHE3_B/C.pdf
Description:
1.5KW,16V 5%,UNIDIR,AXIAL TVS
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,770

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

1N6276AHE3_B/C from Vishay General Semiconductor is a unidirectional Transient Voltage Suppressor (TVS) diode designed for primary-side overvoltage protection in DC power rails and signal lines. It features a 15.2 V to 16.8 V breakdown voltage range at 1.0 mA test current, 13.6 V maximum standoff voltage, 22.5 V clamping voltage at 66.7 A peak pulse current, and 1500 W peak pulse power capability with 10/1000 µs waveform - used to safeguard MOSFETs, ICs, and sensor interfaces against lightning-induced surges and inductive switching transients.

For engineers reviewing the 1N6276AHE3_B/C datasheet, 1N6276AHE3_B/C pinout, 1N6276AHE3_B/C application, or 1N6276AHE3_B/C equivalent, this part delivers verified AEC-Q101 qualification (per note 2), RoHS-compliant matte tin-plated leads, JESD 201 Class 2 whisker resistance, and UL 94 V-0 molded epoxy packaging - critical for automotive, industrial, and telecom surge protection design-in.

Technical Context

This unidirectional TVS diode operates as a voltage-clamped shunt protector, activating when transient voltage exceeds its 13.6 V standoff threshold and clamping to ≤22.5 V at 66.7 A. Its glass-passivated junction enables sub-nanosecond response time and low incremental surge resistance, supporting robust protection of sensitive downstream components without affecting normal circuit operation.

The device is rated for -55 °C to +175 °C operating junction temperature, with thermal resistance of 15.4 °C/W (junction-to-lead) and 75 °C/W (junction-to-ambient). It sustains 200 A non-repetitive forward surge current (8.3 ms half-sine) and exhibits 0.086 %/°C temperature coefficient of breakdown voltage - enabling stable performance across wide thermal environments.

Key Specifications

Parameter Value and Actual Design Meaning
Breakdown Voltage VBR15.2 V to 16.8 V at 1.0 mA - defines precise activation threshold for reliable overvoltage triggering
Standoff Voltage VWM13.6 V maximum - ensures no conduction during normal 12 V rail operation with margin
Clamping Voltage VC22.5 V at 66.7 A (10/1000 µs) - limits stress on protected ICs to safe voltage levels
Peak Pulse Power1500 W - handles high-energy transients like ISO 7637-2 Pulse 5a without failure
Operating Temperature-55 °C to +175 °C - supports under-hood automotive and industrial ambient conditions
AEC-Q101 QualifiedYes (1.5KE6.8AHE3_B to 1.5KE220AHE3_B) - validated for automotive electronics reliability
PackageCase Style 1.5KE - industry-standard DO-201AD outline, leaded through-hole mounting

Pinout & Package

Package: DO-201AD (Case Style 1.5KE), molded epoxy body with matte tin-plated leads; cathode indicated by color band.

Pin/Terminal Circuit Role Design Meaning
AnodeCurrent entry point during reverse-biased clampingConnected to protected line (e.g., 12 V rail); conducts surge current to ground when VIN > VBR
CathodeCurrent exit point during clamping; marked with bandConnected to system ground; establishes reference for clamping action and polarity-sensitive placement

Key Features

Feature Design Value
Glass-passivated junctionEnables sub-1 ns response time and stable leakage performance over lifetime
1500 W peak pulse rating (10/1000 µs)Withstands high-energy transients per ISO 7637-2 and IEC 61000-4-5 Level 4
AEC-Q101 qualifiedValidated for automotive-grade reliability including temperature cycling and HTRB
JESD 201 Class 2 whisker resistancePrevents tin whisker growth in high-reliability applications requiring long-term stability
UL 94 V-0 flammability ratingMold compound self-extinguishes, meeting safety requirements for enclosed systems

Applications

Automotive Power Rail Protection Industrial Sensor Interface Protection

Use Scenario: Protecting 12 V battery-fed ECUs from load dump and alternator transients per ISO 7637-2.

IC Role / Device Role / Timing Role: Unidirectional shunt TVS placed between power rail and chassis ground to clamp surges above 13.6 V.

Use Value: Limits voltage seen by microcontroller power supply to ≤22.5 V during 66.7 A transients, preventing latch-up or damage.

Use Scenario: Safeguarding analog sensor outputs (e.g., pressure, temperature) connected to PLC inputs in factory automation.

IC Role / Device Role / Timing Role: TVS mounted at connector entry to absorb ESD and cable discharge events before reaching ADC front-end.

Use Value: Clamps 8/20 µs surges to <25 V while maintaining <1 µA leakage at 12 V, preserving signal integrity and measurement accuracy.

Telecom Line Card Surge Protection Consumer Power Adapter Input Stage

Use Scenario: Front-end protection on DSL or PoE-powered line cards exposed to lightning-induced surges on outdoor cabling.

IC Role / Device Role / Timing Role: Primary-level TVS on DC input bus to divert induced energy before DC-DC converters.

Use Value: Absorbs 1500 W pulses without degradation, enabling compliance with ITU-T K.20 and GR-1089-CORE standards.

Use Scenario: Overvoltage suppression on AC-DC adapter primary-side rectified output feeding bulk capacitor.

IC Role / Device Role / Timing Role: Unidirectional TVS across bulk cap to clamp switch-mode transient spikes and brownout recovery overshoot.

Use Value: Prevents capacitor overvoltage failure and downstream regulator damage during 100 V/10 µs line disturbances.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMBJ15A-E3/52DO-214AA package (SMB), 15 V VBR, 24.4 V VC at 61.5 A, 600 W ratingLower power handling; surface-mount only; suited for space-constrained PCBsSelect when board area is limited and 600 W surge immunity suffices
1.5KE16AHE3_B/CSame family, identical electrical specs and AEC-Q101 qualification; alternate manufacturer markingNo functional or application difference - direct cross-reference per Vishay documentationUse interchangeably where procurement or inventory policy favors 1.5KE prefix

Compared with SMBJ15A-E3/52, the 1N6276AHE3_B/C offers 2.5× higher peak pulse power (1500 W vs. 600 W) and through-hole mechanical robustness; compared with 1.5KE16AHE3_B/C, it is electrically identical but designated under the legacy 1N62xxA numbering convention - both share DO-201AD package, AEC-Q101 qualification, and UL 94 V-0 compliance.

Availability

1N6276AHE3_B/C is available at Aetrix Electronics and suitable for automotive ECU protection, industrial sensor interface hardening, and telecom line card surge suppression requiring stable component supply and long-lifecycle support.

Supply support for 1N6276AHE3_B/C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and application-specific performance.

The 1N6276AHE3_B/C belongs to Vishay's TRANSZORB® TVS diode family, engineered for high-energy transient suppression in harsh environments - targeting automotive, industrial, and communications infrastructure where failure resilience is mission-critical.

FAQ

What is the breakdown voltage tolerance for 1N6276AHE3_B/C?

The 1N6276AHE3_B/C has a specified breakdown voltage range of 15.2 V to 16.8 V at 1.0 mA test current, representing ±5.3% tolerance around the nominal 16 V rating. This tight VBR window ensures consistent clamping behavior across production lots and supports predictable system-level overvoltage margining in designs using the 1N6276AHE3_B/C.

Is 1N6276AHE3_B/C suitable for automotive applications?

Yes, the 1N6276AHE3_B/C is explicitly AEC-Q101 qualified per Vishay documentation (note 2, page 3), covering stress tests including temperature cycling, high-temperature reverse bias, and unbiased highly accelerated stress testing. Its -55 °C to +175 °C operating range and DO-201AD mechanical robustness make it appropriate for engine control units, body electronics, and infotainment power supplies where the 1N6276AHE3_B/C is deployed.

What is the clamping voltage of 1N6276AHE3_B/C at rated peak pulse current?

The 1N6276AHE3_B/C clamps to a maximum of 22.5 V when subjected to its rated peak pulse current of 66.7 A under the standard 10/1000 µs waveform. This value is measured per JEDEC test conditions and defines the upper voltage limit imposed on protected circuitry during worst-case transient events - a key parameter for validating safe operation of downstream ICs with the 1N6276AHE3_B/C in place.

Does 1N6276AHE3_B/C have a bidirectional variant?

No, the 1N6276AHE3_B/C is strictly unidirectional. Bidirectional variants in the same family use the "CA" suffix (e.g., 1N6276CA), but Vishay's datasheet lists only unidirectional types from 1N6267A through 1N6303A. The 1N6276AHE3_B/C's polarity is marked by a cathode band and must be oriented correctly in-circuit to function - it does not support AC or dual-rail clamping.

What package type does 1N6276AHE3_B/C use, and what are its mounting considerations?

The 1N6276AHE3_B/C uses the DO-201AD package (Case Style 1.5KE), a through-hole axial-leaded outline with 0.375" (9.5 mm) lead length. Mounting requires standard wave or hand soldering at ≤275 °C for 10 s max; leads are matte tin-plated and compliant with J-STD-002 and JESD 22-B102. Board layout must observe minimum creepage/clearance distances per IEC 61000-4-5 for the 1N6276AHE3_B/C's 22.5 V clamping level.

1N6276AHE3_B/C Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-201AA, DO-27, Axial
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
13.6V
Voltage - Breakdown (Min):
15.2V
Voltage - Clamping (Max) @ Ipp:
22.5V
Current - Peak Pulse (10/1000µs):
66.7A
Power - Peak Pulse:
1500W (1.5kW)
Power Line Protection:
No
Applications:
Telecom
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Through Hole
Supplier Device Package:
1.5KE

1N6276AHE3_B/C FAQ

1.How can I place an order for 1N6276AHE3_B/C through Aetrix?

Please submit a Request for Quotation (RFQ) for 1N6276AHE3_B/C on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1N6276AHE3_B/C reliable?

The price and inventory of 1N6276AHE3_B/C are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6276AHE3_B/C is usually 5 days.

3.What payment methods are accepted for 1N6276AHE3_B/C?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6276AHE3_B/C transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1N6276AHE3_B/C?

1N6276AHE3_B/C orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1N6276AHE3_B/C order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1N6276AHE3_B/C?

For technical support, including 1N6276AHE3_B/C datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6276AHE3_B/C requirements.

6.How does Aetrix verify that 1N6276AHE3_B/C is sourced from the original manufacturer or authorized distributors?

All 1N6276AHE3_B/C products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6276AHE3_B/C meets industry standards.

7.What is the process for return or replacement of 1N6276AHE3_B/C?

All 1N6276AHE3_B/C units undergo pre-shipment inspection (PSI). If there is an issue with 1N6276AHE3_B/C, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1N6276AHE3_B/C part is unused and in its original packaging.

Return procedure for 1N6276AHE3_B/C:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

1N6276AHE3_B/C Tags

  • 1N6276AHE3_B/C
  • 1N6276AHE3_B/C PDF
  • 1N6276AHE3_B/C Datasheet
  • 1N6276AHE3_B/C Specifications
  • 1N6276AHE3_B/C Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division 1N6276AHE3_B/C
  • Buy 1N6276AHE3_B/C
  • 1N6276AHE3_B/C Price
  • 1N6276AHE3_B/C Distributor
  • 1N6276AHE3_B/C Supplier
  • 1N6276AHE3_B/C Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER