My Inquiry
My Account
Vishay General Semiconductor - Diodes Division 1N6285A-E3/51
- Part No.:
- 1N6285A-E3/51
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-201AA, DO-27, Axial
- Datasheet:
-
1N6285A-E3/51.pdf
- Description:
- TVS DIODE 33.3VWM 53.9VC 1.5KE
- Quantity:
- Payment:
- Shipping:
Inventory:3,544
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
1N6285A-E3/51 from Vishay General Semiconductor is a unidirectional Transient Voltage Suppressor (TVS) diode designed for robust overvoltage protection in power and signal lines. It features a 39 V breakdown voltage (VBR = 37.1–41.0 V at 1.0 mA), 33.3 V stand-off voltage (VWM), 53.9 V clamping voltage (VC) at 27.8 A peak pulse current, 1500 W peak pulse power (10/1000 µs), and operates across –55 °C to +175 °C junction temperature. It is widely deployed in automotive power supply rails and industrial sensor interface protection.
For engineers reviewing the 1N6285A-E3/51 datasheet, 1N6285A-E3/51 pinout, 1N6285A-E3/51 application, or 1N6285A-E3/51 equivalent, this page delivers verified electrical parameters, JEDEC 1.5KE package details, clamping performance under surge conditions, thermal derating behavior, and validated alternative parts for design continuity and sourcing flexibility.
Technical Context
This unidirectional TVS diode uses a glass-passivated silicon junction optimized for fast transient response (<1 ns) and low incremental surge resistance. Its clamping action begins at 37.1 V (min VBR) and limits voltage to ≤53.9 V at 27.8 A (10/1000 µs waveform), enabling reliable protection of downstream MOSFETs and ICs against ESD, lightning-induced surges, and inductive switching transients.
The device complies with JEDEC standard 1.5KE case style, supports 200 A non-repetitive forward surge current (8.3 ms half-sine), and exhibits a temperature coefficient of +0.100 %/°C for VBR. Its 75 °C/W junction-to-ambient thermal resistance and 15.4 °C/W junction-to-lead resistance define its power dissipation limits under real-world PCB mounting conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 37.1 V / 41.0 V at 1.0 mA - defines precise voltage threshold where clamping initiates; ensures consistent protection margin above 33.3 V operating rail. |
| VWM | 33.3 V - maximum continuous reverse working voltage; guarantees no conduction during normal operation up to this level. |
| VC @ IPPM | 53.9 V at 27.8 A - clamped voltage during 1500 W transient; determines maximum stress imposed on protected circuitry. |
| PPPM | 1500 W (10/1000 µs) - peak surge power handling capacity; validates suitability for IEC 61000-4-5 Level 4 compliance testing. |
| IFSM | 200 A (8.3 ms half-sine) - single-pulse forward surge rating; supports protection of high-current DC power inputs without failure. |
| TJ range | –55 °C to +175 °C - extended junction temperature capability; enables use in under-hood automotive and industrial environments. |
| RθJA | 75 °C/W - thermal resistance defining self-heating under steady-state 6.5 W dissipation; informs heatsinking requirements. |
Pinout & Package
1N6285A-E3/51 is housed in the industry-standard JEDEC 1.5KE molded epoxy package (Case Style 1.5KE), featuring axial leads with matte tin plating compliant with J-STD-002 and JESD 22-B102. The cathode is marked by a color band on the body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry point in forward bias | Connected to ground or lower-potential node in unidirectional clamp configuration; enables low-VF conduction during surge events. |
| Cathode | Current exit point in forward bias; marked with band | Connected to protected line (e.g., 33 V rail); reverse-biased during normal operation, avalanches at VBR during overvoltage. |
Key Features
| Feature | Design Value |
|---|---|
| Glass-passivated junction | Ensures stable VBR tolerance (±5 %) and long-term reliability under thermal cycling and humidity exposure. |
| 1500 W peak pulse power (10/1000 µs) | Supports protection against severe transients per ISO 7637-2 Pulse 5a and IEC 61000-4-5 Combination Wave (1.2/50 µs + 8/20 µs). |
| Low clamping ratio (VC/VBR ≈ 1.42) | Minimizes voltage overshoot during clamping-critical for safeguarding 3.3 V or 5 V logic interfaces powered from protected rails. |
| AEC-Q101 qualification option (HE3 suffix) | Validated for automotive under-hood applications; not applicable to -E3/51 variant, but confirms family-level robustness path. |
| RoHS-compliant, commercial-grade (E3) | Meets JESD 201 Class 1A whisker resistance; suitable for consumer, industrial, and telecom equipment with cost-sensitive BOMs. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Signal Line Protection |
|---|---|
|
Use Scenario: Protecting 33 V battery-fed control modules from load dump transients (ISO 7637-2 Pulse 5a) and alternator ripple. IC Role / Device Role / Timing Role: Unidirectional TVS placed between power rail and chassis ground; clamps within <1 ns when VIN exceeds 37.1 V. Use Value: Limits rail voltage to ≤53.9 V during 1500 W surges, preventing damage to MCU power supplies and CAN transceivers. |
Use Scenario: Shielding 4–20 mA analog sensor outputs from ESD and field-wiring induced surges in factory automation. IC Role / Device Role / Timing Role: TVS connected between signal line and local ground; absorbs ±8 kV contact ESD (IEC 61000-4-2) without degradation. Use Value: Maintains signal integrity below 33.3 V operating range while suppressing transients up to 27.8 A peak current. |
| Telecom DC Power Input Protection | Computer Peripheral USB VBUS Line Protection |
|
Use Scenario: Safeguarding PoE-powered network switches against lightning-induced surges on 48 V DC input lines. IC Role / Device Role / Timing Role: Primary clamping device on input stage; coordinated with upstream fuses and secondary filtering. Use Value: Handles repetitive 10/1000 µs surges up to 0.01 % duty cycle, sustaining 6.5 W continuous dissipation at TL = 75 °C. |
Use Scenario: Adding overvoltage resilience to USB 2.0 host ports exposed to hot-plug and cable coupling events. IC Role / Device Role / Timing Role: Standoff-rated TVS on VBUS line; blocks leakage (<1 µA at 33.3 V) while responding to >37 V faults. Use Value: Prevents latch-up in USB controllers by limiting VBUS to 53.9 V during 27.8 A transients, preserving port functionality. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ36A | DO-214AA package (SMB), 36 V VWM, 58.1 V VC @ 23.5 A, 600 W PPPM | Lower power rating and smaller footprint; suited for space-constrained PCBs with moderate surge requirements. | Select SMBJ36A when board area is limited and peak surge energy is ≤600 W; verify thermal relief for sustained 6.5 W dissipation. |
| 1.5KE39A | Same 1.5KE package, identical VBR/VWM/VC specs, but offered in bulk/tape-and-reel without E3/51 packaging code | No functional difference; differs only in packaging format (no reel quantity or tape specification). | Choose 1.5KE39A for manual assembly or non-automated production; 1N6285A-E3/51 is preferred for SMT pick-and-place with 1400-unit 13″ reel delivery. |
Compared with SMBJ36A, 1N6285A-E3/51 delivers 2.5× higher surge power (1500 W vs. 600 W) and superior thermal management via axial-leaded 1.5KE package, while 1.5KE39A offers identical protection performance in alternate packaging-making 1N6285A-E3/51 optimal for high-reliability automated manufacturing of automotive and industrial systems.
Availability
1N6285A-E3/51 is available at Aetrix Electronics and suitable for automotive power rail protection, industrial sensor interface hardening, and telecom DC input surge suppression requiring stable component supply and full traceability.
Supply support for 1N6285A-E3/51 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability, power handling, and automotive qualification.
The 1N6285A-E3/51 belongs to Vishay's TRANSZORB® TVS diode family, engineered specifically for high-energy transient suppression in harsh environments-including automotive, industrial controls, and infrastructure equipment where failure is not an option.
FAQ
What is the breakdown voltage tolerance for 1N6285A-E3/51?
The 1N6285A-E3/51 has a specified breakdown voltage range of 37.1 V to 41.0 V at 1.0 mA test current, representing a ±5 % tolerance around the nominal 39 V rating. This tight tolerance ensures predictable clamping onset across production lots and temperature extremes from –55 °C to +175 °C, critical for designs requiring precise overvoltage thresholds.
Does 1N6285A-E3/51 meet AEC-Q101 automotive qualification?
No, the 1N6285A-E3/51 is the commercial-grade RoHS-compliant variant (E3 suffix). AEC-Q101 qualification is available only on the HE3 suffix versions (e.g., 1.5KE39AHE3_B), which undergo additional stress testing for automotive under-hood use. Engineers requiring automotive qualification must select the HE3 variant-not the E3/51 part.
What is the maximum clamping voltage of 1N6285A-E3/51 under surge conditions?
The 1N6285A-E3/51 clamps to a maximum of 53.9 V when subjected to its rated 27.8 A peak pulse current (10/1000 µs waveform). This value is measured per JEDEC standards and defines the upper voltage limit imposed on protected circuitry during worst-case transients, directly informing safe operating margins for downstream components.
Can 1N6285A-E3/51 be used in bidirectional configurations?
No, 1N6285A-E3/51 is strictly a unidirectional TVS diode, identified by the "A" suffix and cathode band marking. Bidirectional variants in the same family use the "CA" suffix (e.g., 1.5KE39CA). Using 1N6285A-E3/51 in bidirectional applications would result in forward conduction during negative transients, causing failure or incorrect protection behavior.
What is the thermal resistance and power derating behavior of 1N6285A-E3/51?
The 1N6285A-E3/51 has a typical junction-to-ambient thermal resistance (RθJA) of 75 °C/W and junction-to-lead resistance (RθJL) of 15.4 °C/W. Its 6.5 W steady-state power dissipation is rated at TL = 75 °C; power must be linearly derated above that temperature per Figure 5 in the Vishay datasheet (Document 88301), reaching zero at 175 °C junction temperature.
1N6285A-E3/51 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-201AA, DO-27, Axial
- Series:
- TransZorb®
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 33.3V
- Voltage - Breakdown (Min):
- 37.1V
- Voltage - Clamping (Max) @ Ipp:
- 53.9V
- Current - Peak Pulse (10/1000µs):
- 27.8A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 1.5KE
1N6285A-E3/51 FAQ
1.How can I place an order for 1N6285A-E3/51 through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6285A-E3/51 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6285A-E3/51 reliable?
The price and inventory of 1N6285A-E3/51 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6285A-E3/51 is usually 5 days.
3.What payment methods are accepted for 1N6285A-E3/51?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6285A-E3/51 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6285A-E3/51?
1N6285A-E3/51 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6285A-E3/51 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6285A-E3/51?
For technical support, including 1N6285A-E3/51 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6285A-E3/51 requirements.
6.How does Aetrix verify that 1N6285A-E3/51 is sourced from the original manufacturer or authorized distributors?
All 1N6285A-E3/51 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6285A-E3/51 meets industry standards.
7.What is the process for return or replacement of 1N6285A-E3/51?
All 1N6285A-E3/51 units undergo pre-shipment inspection (PSI). If there is an issue with 1N6285A-E3/51, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6285A-E3/51 part is unused and in its original packaging.
Return procedure for 1N6285A-E3/51:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N6285A-E3/51 Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
