Vishay General Semiconductor - Diodes Division 1N6287AHE3/51
- Part No.:
- 1N6287AHE3/51
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-201AA, DO-27, Axial
- Datasheet:
-
1N6287AHE3/51.pdf
- Description:
- TVS DIODE 40.2VWM 64.8VC 1.5KE
- Quantity:
- Payment:

- Shipping:

Inventory:2,999
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
1N6287AHE3/51 from Vishay General Semiconductor is a uni-directional Transient Voltage Suppressor (TVS) diode designed for primary overvoltage protection in DC power rails and signal lines. It features a 47 V breakdown voltage (VBR = 44.7–49.4 V at IT = 1.0 mA), 40.2 V maximum stand-off voltage (VWM), 64.8 V clamping voltage (VC) at 23.1 A peak pulse current, 1500 W peak pulse power (10/1000 µs), and AEC-Q101 qualification - enabling use in automotive engine control units and industrial sensor interfaces.
For engineers reviewing the 1N6287AHE3/51 datasheet, 1N6287AHE3/51 pinout, 1N6287AHE3/51 application, or 1N6287AHE3/51 equivalent, this page delivers verified electrical parameters, JEDEC 1.5KE package details, clamping performance under surge conditions, thermal derating behavior, and direct-fit alternatives for ESD and lightning transient protection in automotive-grade designs.
Technical Context
This TVS diode operates as a voltage-clamped shunt protector: when reverse voltage exceeds VBR, it avalanches into low-impedance conduction to divert surge current away from downstream ICs. Its glass-passivated junction ensures stable breakdown and low leakage (<1.0 µA at VWM), while the 10/1000 µs waveform rating reflects standardized lightning-surge immunity testing per IEC 61000-4-5.
Thermal design relies on RθJL = 15.4 °C/W (junction-to-lead) and RθJA = 75 °C/W (junction-to-ambient), with power derating beginning above TA = 25 °C and full derating at TL = 75 °C. The device supports 200 A non-repetitive forward surge (8.3 ms half-sine) and maintains clamping stability across -55 °C to +175 °C operating junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 44.7 V / 49.4 V at 1.0 mA test current - defines precise avalanche onset threshold for reliable triggering |
| VWM | 40.2 V - maximum continuous reverse working voltage before leakage exceeds 1.0 µA |
| VC @ IPPM | 64.8 V at 23.1 A - clamping voltage during 1500 W transient, limiting stress on protected circuitry |
| PPPM | 1500 W (10/1000 µs waveform) - industry-standard surge power rating for lightning and inductive-switching events |
| IFSM | 200 A (8.3 ms half-sine) - peak forward surge capability for accidental polarity reversal scenarios |
| TJ range | -55 °C to +175 °C - enables deployment in under-hood automotive and high-temp industrial environments |
| AEC-Q101 | Qualified - validated for automotive electronics per stress-test requirements including HTGB, HTRB, and TCT |
Pinout & Package
Package: JEDEC DO-201AD (Case Style 1.5KE), axial-leaded, molded epoxy body with matte tin-plated leads compliant to J-STD-002 and JESD 22-B102. Cathode indicated by color band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / surge return path | Connected to ground or low-impedance return plane during clamping; must handle 200 A surge |
| Cathode | Reverse-biased input / protected line connection | Connected to line being protected (e.g., 24 V rail); color band identifies this terminal |
Key Features
| Feature | Design Value |
|---|---|
| Glass passivated junction | Ensures stable VBR tolerance (±5%), low leakage (<1 µA), and long-term reliability under thermal cycling |
| 1500 W peak pulse power | Withstands IEC 61000-4-5 Level 4 surges (4 kV line-earth, 2 kV line-line) without degradation |
| AEC-Q101 qualification | Validated for automotive applications including powertrain, body control, and ADAS sensor modules |
| Low incremental surge resistance | Enables tight clamping (VC – VBR = 20.1 V) to minimize voltage overshoot on protected ICs |
| UL 94 V-0 molding compound | Meets flammability safety requirements for enclosed industrial and automotive enclosures |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
|
Use Scenario: Protecting 24 V supply inputs of engine control units (ECUs) against load dump transients up to 35 V and ISO 7637-2 Pulse 5a. IC Role / Device Role: Shunt clamping element placed between battery rail and local regulator input. Use Value: Clamps transients to ≤64.8 V within nanoseconds, preventing damage to downstream LDOs and microcontrollers rated for 36 V max input. |
Use Scenario: Safeguarding analog outputs of pressure sensors in factory automation systems exposed to relay coil switching noise. IC Role / Device Role: Reverse-polarity and surge suppressor on 4–20 mA current loop output lines. Use Value: Limits induced spikes to <65 V while maintaining <1 µA leakage at 24 V nominal, preserving loop accuracy and sensor calibration. |
| Telecom Line Card Surge Protection | Consumer Appliance Motor Drive Protection |
|
Use Scenario: Front-end protection for DSL line interface circuits subjected to longitudinal surges per GR-1089-CORE. IC Role / Device Role: Primary uni-directional clamp on tip/ring lines referenced to chassis ground. Use Value: Responds in <1 ns to divert >20 A surges, holding clamped voltage below 65 V to protect PHY transceivers and isolation transformers. |
Use Scenario: Suppressing inductive kickback from brushed DC motors in smart home appliances (e.g., washing machine drum drives). IC Role / Device Role: Flyback diode replacement with enhanced surge handling across motor H-bridge supply rails. Use Value: Absorbs 1500 W pulses without failure, eliminating need for external snubbers while supporting AEC-Q101-compliant manufacturing traceability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ47A-E3/52 | DO-214AA package (smaller footprint), same VBR (44.7–49.4 V), lower PPPM = 600 W | Preferred for space-constrained PCBs where 600 W surge margin suffices (e.g., consumer USB ports) | Select SMBJ47A-E3/52 only if board layout prohibits axial DO-201AD placement and surge energy is ≤600 W |
| 1.5KE47AHE3_A | Same die, identical electrical specs, identical AEC-Q101 qualification, but packaged in 13" tape-and-reel (base code HE3_A vs. HE3/51) | No functional difference; differs only in packaging format and reel quantity (1400 pcs vs. 51 pcs) | 1.5KE47AHE3_A is functionally identical to 1N6287AHE3/51 and may be substituted with no design change |
Compared with 1N6287AHE3/51, SMBJ47A-E3/52 trades surge robustness for compactness, while 1.5KE47AHE3_A offers identical protection in alternate packaging - making the latter a drop-in sourcing alternative, and the former a layout-driven trade-off for lower-energy applications.
Availability
1N6287AHE3/51 is available at Aetrix Electronics and suitable for automotive ECUs, industrial sensor nodes, telecom line cards, and appliance motor controllers requiring stable component supply with AEC-Q101 compliance and traceable sourcing.
Supply support for 1N6287AHE3/51 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and automotive-grade validation.
The 1N6287AHE3/51 belongs to Vishay's TRANSZORB® TVS family, engineered specifically for high-energy transient suppression in harsh environments - targeting automotive, industrial, and telecom infrastructure where failure resilience is critical.
FAQ
What is the breakdown voltage tolerance for 1N6287AHE3/51?
The 1N6287AHE3/51 has a specified breakdown voltage range of 44.7 V to 49.4 V at 1.0 mA test current, corresponding to a ±5 % tolerance around the nominal 47 V rating. This tight VBR window ensures consistent clamping onset across production lots and supports reliable system-level surge margin calculations in designs using the 1N6287AHE3/51.
Is 1N6287AHE3/51 suitable for bi-directional transient protection?
No, the 1N6287AHE3/51 is a uni-directional TVS diode, identifiable by its cathode band marking and specified only for reverse-biased operation. For bi-directional protection, Vishay offers the 1N6287CA variant (e.g., 1N6287CAHE3/51), which provides symmetrical clamping in both polarities and omits the polarity marking. Using 1N6287AHE3/51 in AC or floating applications risks forward conduction and failure.
What is the maximum clamping voltage of 1N6287AHE3/51 under surge conditions?
The 1N6287AHE3/51 exhibits a maximum clamping voltage (VC) of 64.8 V when subjected to its rated 23.1 A peak pulse current (IPPM) under the standard 10/1000 µs waveform. This value is measured at the device terminals and represents the upper limit of voltage imposed on the protected circuit during worst-case surge events - a key parameter used to verify compatibility with downstream IC absolute maximum ratings in designs using the 1N6287AHE3/51.
Does 1N6287AHE3/51 meet automotive qualification standards?
Yes, the 1N6287AHE3/51 carries AEC-Q101 qualification, confirmed in Vishay document 88301 (Rev. 11-Oct-16). This includes stress testing for high-temperature reverse bias (HTGB), high-temperature operating life (HTOL), temperature cycling (TCT), and mechanical shock - validating its suitability for automotive powertrain, body electronics, and ADAS applications where the 1N6287AHE3/51 is deployed.
What is the thermal resistance profile of 1N6287AHE3/51?
The 1N6287AHE3/51 has a typical junction-to-lead thermal resistance (RθJL) of 15.4 °C/W and junction-to-ambient resistance (RθJA) of 75 °C/W. These values govern thermal derating: power dissipation drops linearly above 25 °C ambient, reaching zero at 175 °C junction temperature. Effective heatsinking via lead termination is essential to sustain repetitive surge duty cycles - a key consideration in any thermal model for a system using the 1N6287AHE3/51.
1N6287AHE3/51 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-201AA, DO-27, Axial
- Series:
- TransZorb®
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 40.2V
- Voltage - Breakdown (Min):
- 44.7V
- Voltage - Clamping (Max) @ Ipp:
- 64.8V
- Current - Peak Pulse (10/1000µs):
- 23.1A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 1.5KE
1N6287AHE3/51 FAQ
1.How can I place an order for 1N6287AHE3/51 through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6287AHE3/51 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6287AHE3/51 reliable?
The price and inventory of 1N6287AHE3/51 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6287AHE3/51 is usually 5 days.
3.What payment methods are accepted for 1N6287AHE3/51?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6287AHE3/51 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6287AHE3/51?
1N6287AHE3/51 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6287AHE3/51 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6287AHE3/51?
For technical support, including 1N6287AHE3/51 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6287AHE3/51 requirements.
6.How does Aetrix verify that 1N6287AHE3/51 is sourced from the original manufacturer or authorized distributors?
All 1N6287AHE3/51 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6287AHE3/51 meets industry standards.
7.What is the process for return or replacement of 1N6287AHE3/51?
All 1N6287AHE3/51 units undergo pre-shipment inspection (PSI). If there is an issue with 1N6287AHE3/51, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6287AHE3/51 part is unused and in its original packaging.
Return procedure for 1N6287AHE3/51:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N6287AHE3/51 Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

