onsemi 1N6287ARL4G

Overview

1N6287ARL4G from ON Semiconductor is a unidirectional 1500 W Mosorb transient voltage suppressor (TVS) diode in axial lead Surmetic package, designed for parallel clamping of high-energy transients. It features 47 V breakdown voltage (V_BR = 44.7–49.4 V @ I_T = 1 A), 64.8 V maximum clamping voltage (V_C) at 23.2 A peak pulse current (I_PP), and <1 ns response time-used to protect power supplies, communication interfaces, and industrial control inputs from ESD and lightning-induced surges.

For engineers reviewing the 1N6287ARL4G datasheet, pinout, applications, or equivalent options, key selection criteria include working peak reverse voltage (V_RWM = 40.2 V), clamping ratio (V_C/V_BR ≈ 1.38), UL 497B recognition for isolated loop protection, and Pb-free axial lead compatibility with wave/soldering processes up to 260°C.

Technical Context

The 1N6287ARL4G operates as a silicon avalanche diode optimized for transient suppression in DC power rails and signal lines. Its unidirectional configuration provides low-leakage (<5 µA @ 40.2 V) blocking in normal operation and rapid avalanche conduction during overvoltage events, with thermal resistance R_JL = 20 °C/W enabling reliable power dissipation under 1 ms pulses.

It complies with Class 3 ESD immunity (>16 kV HBM) and UL 497B for isolated loop circuit protection. The device's fast turn-on time (<1 ns) minimizes voltage overshoot, while its 1500 W peak pulse rating (at T_L ≤ 25°C) supports robust surge handling per IEC 61000-4-5 Level 4 requirements when properly mounted with short leads.

Key Specifications

Pinout & Package

Package: Axial lead, Surmetic plastic case (Case 41A), Pb-free, cathode indicated by polarity band. Mounting position unrestricted; max solder temperature 260°C at 1/16″ from case for 10 s.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Compared with SMBJ47A, the 1N6287ARL4G delivers 2.5× higher surge power and axial-lead mechanical robustness for industrial wiring; compared with 1.5KE47A, it shares identical electrical behavior but uses ON Semiconductor's standardized ordering suffix for Pb-free tape-and-reel delivery.

Availability

1N6287ARL4G is available at Aetrix Electronics and suitable for industrial power supplies, RS-485 communication systems, and medical sensor interface designs requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for 1N6287ARL4G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in power management, analog, sensor, and discrete devices for automotive, industrial, and cloud power applications.

The 1N6287ARL4G belongs to the 1N6267A Series Mosorb TVS family, engineered specifically for high-reliability transient suppression in harsh environments where UL recognition, surge robustness, and low clamping ratio are critical.

FAQ

What is the maximum clamping voltage of the 1N6287ARL4G during a 1 ms transient event?

The 1N6287ARL4G has a maximum clamping voltage (V_C) of 64.8 V when subjected to its rated peak pulse current of 23.2 A under the standard 1 ms exponential waveform (Figure 5). This value is measured at T_A = 25°C and defines the upper voltage limit imposed on protected circuitry during surge conditions. The 1N6287ARL4G maintains this clamping performance across its specified operating temperature range with appropriate thermal management.

Is the 1N6287ARL4G RoHS-compliant and halogen-free?

Yes, the 1N6287ARL4G is RoHS-compliant and Pb-free, as confirmed by the "G" suffix in its part number and explicit statement in the datasheet that "G indicates Pb−Free package." The device uses void-free, thermosetting plastic encapsulation and meets JESD204B material content requirements. The 1N6287ARL4G is also compliant with ON Semiconductor's halogen-free policy per J-STD-709.

Can the 1N6287ARL4G be used in bidirectional protection configurations?

No, the 1N6287ARL4G is a unidirectional TVS diode and must be used with correct polarity-cathode to the line being protected, anode to ground. For bidirectional protection, two 1N6287ARL4G devices may be connected in series opposing configuration, but this is not recommended due to increased leakage and reduced reliability. Use dedicated bidirectional parts like 1N6287CRL4G instead of repurposing the 1N6287ARL4G.

What is the thermal resistance junction-to-lead (R_JL) for the 1N6287ARL4G?

The thermal resistance junction-to-lead (R_JL) for the 1N6287ARL4G is 20 °C/W, as specified in the Maximum Ratings table. This parameter quantifies how effectively heat transfers from the silicon junction to the lead frame under steady-state conditions. It directly impacts the device's ability to handle repetitive surges and must be considered alongside lead length and ambient temperature when designing for continuous operation.

Does the 1N6287ARL4G require derating at elevated ambient temperatures?

Yes, the 1N6287ARL4G requires derating for both peak pulse power and steady-state power at elevated temperatures. Peak power must be reduced per Figure 2 (pulse derating curve), and steady-state power dissipation drops from 5.0 W at T_L = 75°C to zero at 125°C, with a derating factor of 20 mW/°C above 75°C. These derating rules ensure safe operation of the 1N6287ARL4G in real-world thermal environments.