Vishay General Semiconductor - Diodes Division 1N6289AHE3/51
- Part No.:
- 1N6289AHE3/51
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-201AA, DO-27, Axial
- Datasheet:
-
1N6289AHE3/51.pdf
- Description:
- TVS DIODE 47.8VWM 77VC 1.5KE
- Quantity:
- Payment:

- Shipping:

Inventory:8,086
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Product details
Overview
1N6289AHE3/51 from Vishay General Semiconductor is a uni-directional Transient Voltage Suppressor (TVS) diode designed for primary overvoltage protection in DC power rails and signal lines. It features a 53.2–58.8 V breakdown voltage (VBR), 47.8 V stand-off voltage (VWM), 77.0 V clamping voltage at 19.5 A peak pulse current, 1500 W peak pulse power rating (10/1000 µs), and AEC-Q101 qualification for automotive-grade reliability.
For engineers reviewing the 1N6289AHE3/51 datasheet, 1N6289AHE3/51 pinout, 1N6289AHE3/51 application, or 1N6289AHE3/51 equivalent, this device is selected for robust transient suppression in automotive ECUs, industrial PLC I/O modules, and telecom power supply front-ends where fast response (<1 ns), low clamping ratio, and high surge current tolerance are critical.
Technical Context
This TVS diode operates as a voltage-clamped shunt protector: under normal conditions it presents high impedance (>1 µA leakage at 47.8 V), but triggers into low-impedance conduction when transient voltage exceeds its 53.2–58.8 V breakdown range. Its glass-passivated junction ensures stable VBR tolerance (±5%) and low temperature coefficient (0.103 %/°C).
The device handles non-repetitive 10/1000 µs surges up to 19.5 A while limiting clamped voltage to 77.0 V - delivering a clamping ratio of 1.31 (VC/VBR(MIN)). Its 15.4 °C/W junction-to-lead thermal resistance supports reliable power dissipation in leaded PCB layouts without heatsinking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 53.2 V / 58.8 V - defines precise voltage threshold for avalanche conduction onset; ±5% tolerance enables accurate system-level overvoltage margining |
| VWM | 47.8 V - maximum continuous reverse operating voltage; ensures no conduction during nominal 48 V rail operation |
| VC @ IPPM | 77.0 V @ 19.5 A - clamped voltage during 1500 W transient; limits downstream IC stress to safe levels in 48 V systems |
| PPPM | 1500 W - peak pulse power handling per 10/1000 µs waveform; meets IEC 61000-4-5 Level 4 surge immunity requirements |
| IPPM | 19.5 A - peak pulse current capacity; sustains lightning-induced transients on industrial fieldbus lines |
| TJ(max) | +175 °C - maximum junction temperature; supports under-hood automotive placement with minimal derating |
| Leakage @ VWM | 1.0 µA - ultra-low reverse leakage preserves battery life in always-on automotive modules |
Pinout & Package
Package: Axial-leaded DO-201AD (Case Style 1.5KE), epoxy-molded body with matte tin-plated leads; RoHS-compliant and AEC-Q101 qualified (HE3 suffix). Cathode indicated by color band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side reference node | Connected to ground or lowest potential rail; completes shunt path during transient |
| Cathode | Protected line input | Connected to line being protected (e.g., 48 V supply); color band identifies polarity |
Key Features
| Feature | Design Value |
|---|---|
| Glass-passivated junction | Ensures stable VBR over lifetime and temperature; eliminates parameter drift in harsh environments |
| 1500 W peak pulse power (10/1000 µs) | Withstands IEC 61000-4-5 combination wave surges without degradation |
| AEC-Q101 qualification | Validated for automotive applications including engine control, ADAS power domains, and infotainment supplies |
| 0.103 %/°C VBR tempco | Minimizes voltage shift across -55 °C to +175 °C; maintains protection margin in extreme thermal conditions |
| 1.0 µA max leakage @ VWM | Prevents standby current drain in battery-backed systems such as telematics and remote sensors |
Applications
| Automotive Power Rail Protection | Industrial 48 V DC Input Stage |
|---|---|
Use Scenario: Protecting microcontroller power inputs in engine control units exposed to load dump transients up to 60 V. IC Role / Device Role / Timing Role: Shunt-type transient suppressor placed between 48 V supply and local regulator input. Use Value: Clamps 19.5 A surges to ≤77.0 V within <1 ns, preventing regulator latch-up and MCU brownout. |
Use Scenario: Safeguarding programmable logic controller (PLC) digital I/O module power inputs against inductive switching spikes. IC Role / Device Role / Timing Role: Primary overvoltage clamp on 48 V backplane rail before DC/DC conversion. Use Value: Absorbs 1500 W pulses without failure, enabling compliance with IEC 61000-4-4 electrical fast transient immunity. |
| Telecom Power Supply Front-End | Renewable Energy Charge Controller |
Use Scenario: Guarding PoE+ midspan injector outputs against cable-induced lightning surges. IC Role / Device Role / Timing Role: Line-side TVS on 57 V output rail prior to isolation transformer. Use Value: Limits clamped voltage to 77.0 V, preserving IEEE 802.3at compliance and protecting downstream MOSFET switches. |
Use Scenario: Protecting solar charge controller inputs from grid-switching transients in off-grid battery systems. IC Role / Device Role / Timing Role: Bidirectional-capable protection (via companion bi-directional variant) on PV string input. Use Value: Withstands repetitive 10/1000 µs surges up to 19.5 A, extending service life in rural installations with poor grounding. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ58A | DO-214AA package; 58.0–64.4 V VBR; 93.6 V VC @ 16.0 A; 600 W PPPM | Lower power rating; surface-mount only; suited for space-constrained PCBs with lower surge exposure | Select SMBJ58A for compact designs where 600 W surge capability suffices and reflow assembly is preferred |
| 1.5KE56AHE3_A | Same die, identical specs, but packaged in 13" tape-and-reel (base code C); same DO-201AD case | No functional difference; differs only in packaging format and reel quantity (1400 pcs vs. 51 pcs) | Choose 1.5KE56AHE3_A for high-volume automated assembly; 1N6289AHE3/51 suits prototyping and low-volume repair |
Compared with SMBJ58A, 1N6289AHE3/51 delivers 2.5× higher surge power (1500 W vs. 600 W) and lower clamping voltage (77.0 V vs. 93.6 V), making it superior for demanding automotive and industrial surge environments; versus 1.5KE56AHE3_A, it offers identical protection performance but in smaller 51-piece packaging optimized for evaluation and field replacement.
Availability
1N6289AHE3/51 is available at Aetrix Electronics and suitable for automotive ECU design, industrial PLC I/O protection, and telecom power supply development requiring stable component supply, traceable sourcing, and long-term lifecycle support.
Supply support for 1N6289AHE3/51 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, rectifiers, and protection devices for automotive, industrial, and computing markets.
The 1N6289AHE3/51 belongs to Vishay's TRANSZORB® TVS family, engineered specifically for high-energy transient suppression in harsh environments where AEC-Q101 reliability and precise clamping performance are mandatory.
FAQ
What is the breakdown voltage range of the 1N6289AHE3/51?
The 1N6289AHE3/51 has a guaranteed breakdown voltage (VBR) range of 53.2 V to 58.8 V at 1.0 mA test current, with ±5% tolerance. This range ensures consistent triggering behavior across manufacturing lots and temperature extremes, enabling predictable overvoltage protection in 48 V systems where the 1N6289AHE3/51 is commonly deployed.
Is the 1N6289AHE3/51 suitable for automotive applications?
Yes, the 1N6289AHE3/51 is AEC-Q101 qualified and rated for operation from –55 °C to +175 °C junction temperature. Its glass-passivated junction, low leakage (<1.0 µA), and robust 1500 W surge capability make it appropriate for under-hood engine control units, body electronics, and ADAS power domains where the 1N6289AHE3/51 provides certified transient protection.
What is the clamping voltage of the 1N6289AHE3/51 at its rated peak pulse current?
The 1N6289AHE3/51 clamps to a maximum of 77.0 V at its peak pulse current (IPPM) of 19.5 A, measured using the standard 10/1000 µs waveform. This clamping voltage directly determines the maximum stress imposed on downstream components, and the 1N6289AHE3/51's 77.0 V value ensures compatibility with 80 V-rated MOSFETs and regulators in 48 V architectures.
How does the 1N6289AHE3/51 differ from the 1.5KE56A series?
The 1N6289AHE3/51 and 1.5KE56A share identical electrical specifications and DO-201AD packaging; the distinction lies in packaging format and ordering code. The 1N6289AHE3/51 uses /51 suffix denoting 51-piece bulk packaging, while 1.5KE56A variants use /54 (1400-piece tape-and-reel) or /C (1400-piece tape-and-reel with revision code). Both part numbers refer to the same silicon die and performance of the 1N6289AHE3/51.
What is the maximum reverse leakage current of the 1N6289AHE3/51 at its working voltage?
The 1N6289AHE3/51 exhibits a maximum reverse leakage current (ID) of 1.0 µA at its stand-off voltage (VWM) of 47.8 V and ambient temperature of 25 °C. This ultra-low leakage preserves energy efficiency in always-on automotive modules and extends battery life in remote sensor nodes where the 1N6289AHE3/51 is used for long-term reliability.
1N6289AHE3/51 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-201AA, DO-27, Axial
- Series:
- TransZorb®
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 47.8V
- Voltage - Breakdown (Min):
- 53.2V
- Voltage - Clamping (Max) @ Ipp:
- 77V
- Current - Peak Pulse (10/1000µs):
- 19.5A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 1.5KE
1N6289AHE3/51 FAQ
1.How can I place an order for 1N6289AHE3/51 through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6289AHE3/51 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6289AHE3/51 reliable?
The price and inventory of 1N6289AHE3/51 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6289AHE3/51 is usually 5 days.
3.What payment methods are accepted for 1N6289AHE3/51?
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4.How is shipping managed for 1N6289AHE3/51?
1N6289AHE3/51 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6289AHE3/51 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6289AHE3/51?
For technical support, including 1N6289AHE3/51 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6289AHE3/51 requirements.
6.How does Aetrix verify that 1N6289AHE3/51 is sourced from the original manufacturer or authorized distributors?
All 1N6289AHE3/51 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6289AHE3/51 meets industry standards.
7.What is the process for return or replacement of 1N6289AHE3/51?
All 1N6289AHE3/51 units undergo pre-shipment inspection (PSI). If there is an issue with 1N6289AHE3/51, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6289AHE3/51 part is unused and in its original packaging.
Return procedure for 1N6289AHE3/51:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N6289AHE3/51 Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Toshiba Semiconductor and Storage

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