My Inquiry
My Account
Vishay General Semiconductor - Diodes Division 1N6290AHE3_B/C
- Part No.:
- 1N6290AHE3_B/C
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-201AA, DO-27, Axial
- Datasheet:
-
1N6290AHE3_B/C.pdf
- Description:
- 1.5KW,62V 5%,UNIDIR,AXIAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:3,158
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
1N6290AHE3_B/C from Vishay General Semiconductor is a unidirectional Transient Voltage Suppressor (TVS) diode designed for primary-side overvoltage protection in power rails and signal lines. It features a 62 V breakdown voltage (VBR = 58.9–65.1 V at 1 mA), 1500 W peak pulse power (10/1000 µs), clamping voltage of 85.0 V at 17.6 A, and operates across –55 °C to +175 °C junction temperature. It is used in automotive power supply inputs and industrial sensor interface protection.
For engineers reviewing the 1N6290AHE3_B/C datasheet, 1N6290AHE3_B/C pinout, 1N6290AHE3_B/C application, or 1N6290AHE3_B/C equivalent, this page delivers verified electrical specs, AEC-Q101 qualification status, thermal resistance (RθJL = 15.4 °C/W), JEDEC 1.5KE package dimensions, and direct alternatives with documented clamping and standoff voltage differences.
Technical Context
This unidirectional TVS diode uses a glass-passivated silicon junction optimized for fast transient response (<1 ns) and low incremental surge resistance. Its 1500 W peak pulse power rating is defined under standardized 10/1000 µs waveform conditions with 0.01% duty cycle, and it maintains stable clamping performance up to 175 °C junction temperature.
The device exhibits a maximum reverse leakage current of 1.0 µA at 53.0 V stand-off voltage (VWM), a typical forward voltage of 3.5 V at 100 A, and thermal resistance from junction to lead of 15.4 °C/W - enabling reliable operation without heatsinking in moderate-duty surge environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 58.9 V / 65.1 V at 1 mA - defines precise voltage threshold where clamping begins |
| VWM | 53.0 V - maximum continuous working voltage before leakage exceeds 1.0 µA |
| VC @ IPPM | 85.0 V at 17.6 A - clamped voltage during full 1500 W surge, critical for downstream IC survivability |
| PPPM | 1500 W - peak transient energy absorption capability under 10/1000 µs waveform |
| TJ max. | +175 °C - enables use in under-hood automotive and high-temperature industrial environments |
| RθJL | 15.4 °C/W - low thermal resistance supports high-reliability mounting on PCB copper pour or short leads |
| AEC-Q101 | Qualified - certified for automotive electronics per stress test requirements (note: HE3 suffix denotes qualification) |
Pinout & Package
Package: JEDEC-standard Case Style 1.5KE - molded epoxy body with matte tin-plated leads, RoHS-compliant, UL 94 V-0 rated. Dimensions: 5.3 mm × 5.3 mm × 9.5 mm (L × W × H), lead length 9.5 mm, lead diameter 1.07 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry point in forward bias; cathode-biased during transient suppression | Connected to protected line (e.g., 48 V rail); polarity marked by cathode band on body |
| Cathode | Current exit point in forward bias; clamps voltage when reverse-biased above VBR | Typically tied to ground or lower-potential reference; determines unidirectional conduction direction |
Key Features
| Feature | Design Value |
|---|---|
| Glass passivated junction | Enables stable VBR tolerance (±5%) and long-term reliability under thermal cycling |
| 1500 W peak pulse power (10/1000 µs) | Supports robust protection against ISO 7637-2 Pulse 1/2a/5a and IEC 61000-4-5 surges |
| AEC-Q101 qualified (HE3 suffix) | Validated for automotive powertrain and body electronics per stress test requirements |
| Low RθJL = 15.4 °C/W | Minimizes thermal derating in compact layouts; allows >80% PPPM retention at TL = 75 °C |
| 1.0 µA max leakage @ VWM | Prevents excessive standby current in always-on systems such as telematics or ADAS sensors |
Applications
| Automotive Power Input Protection | Industrial Sensor Signal Line Clamp |
|---|---|
Use Scenario: Protecting 12 V/24 V/48 V battery-fed ECUs from load dump and alternator transients. IC Role / Device Role / Timing Role: Primary shunt clamp placed between power rail and chassis ground, responding within <1 ns to limit voltage overshoot. Use Value: Clamps to 85.0 V during 17.6 A surge, ensuring downstream DC-DC converters and microcontrollers remain below absolute maximum ratings. |
Use Scenario: Shielding analog outputs (e.g., 4–20 mA current loop) of pressure/temperature sensors from ESD and inductive switching noise. IC Role / Device Role / Timing Role: Unidirectional TVS placed across output-to-ground, absorbing fast transients while maintaining low leakage at 24 V nominal. Use Value: 1.0 µA leakage at 53.0 V VWM avoids signal offset errors; 85.0 V clamping prevents op-amp input damage during 4 kV contact ESD events. |
| Telecom DC Power Feeds | Consumer Appliance Motor Drive Inputs |
Use Scenario: Safeguarding PoE-powered equipment (e.g., IP cameras) from lightning-induced surges on 48 V DC feed lines. IC Role / Device Role / Timing Role: First-line transient suppressor on input side of DC-DC converter, coordinated with upstream GDT or MOV. Use Value: 1500 W rating handles multiple 10/1000 µs surges per IEC 61000-4-5 Level 4; AEC-Q101 qualification ensures process consistency for high-volume deployment. |
Use Scenario: Protecting microcontroller GPIOs and gate drivers in washing machine motor control boards exposed to relay coil flyback. IC Role / Device Role / Timing Role: Localized TVS on motor driver enable lines and feedback paths, mounted near connectors. Use Value: Fast <1 ns response captures sub-microsecond spikes; 175 °C TJ max supports placement near heat-generating triacs or MOSFETs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ64A-E3/52 | VBR = 71.1–78.6 V; VC = 103 V @ 14.6 A; SMB package (smaller footprint, higher RθJA) | Lower peak power (600 W); suited for space-constrained consumer designs, not automotive under-hood | Select when board area is limited and surge energy is ≤600 W; verify thermal margin due to higher RθJA. |
| 1.5KE62AHE3_A | Identical electrical specs and 1.5KE package; differs only in revision code (A vs B/C) and whisker test class (1A vs 2) | No functional difference; both AEC-Q101 qualified and RoHS compliant | Acceptable drop-in replacement if B/C revision is unavailable; no layout or performance impact. |
Compared with 1N6290AHE3_B/C, SMBJ64A-E3/52 offers smaller size but reduced surge handling and thermal robustness, while 1.5KE62AHE3_A provides identical protection performance with minor process-level qualification variance - making it a seamless alternative for continuity planning.
Availability
1N6290AHE3_B/C is available at Aetrix Electronics and suitable for automotive power distribution modules, industrial sensor interfaces, telecom DC power feeds, and appliance motor control systems requiring stable component supply and AEC-Q101 assurance.
Supply support for 1N6290AHE3_B/C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability, automotive qualification, and high-power transient handling.
The 1N6290AHE3_B/C belongs to Vishay's TRANSZORB® TVS family, engineered specifically for robust, standardized overvoltage protection in harsh environments including automotive, industrial, and telecom infrastructure.
FAQ
What is the breakdown voltage tolerance for 1N6290AHE3_B/C?
The 1N6290AHE3_B/C has a specified breakdown voltage range of 58.9 V to 65.1 V at 1 mA test current, corresponding to a ±5% tolerance around the nominal 62 V rating. This tight tolerance ensures predictable clamping onset across production lots and operating temperatures, critical for protecting voltage-sensitive loads like automotive MCUs and analog front-ends.
Is 1N6290AHE3_B/C qualified for automotive applications?
Yes, the 1N6290AHE3_B/C is AEC-Q101 qualified, as confirmed by its HE3 suffix and documentation in Vishay's 88301 datasheet (Revision 09-Aug-2022). The qualification covers stress tests including high-temperature operating life, temperature cycling, and ESD, making 1N6290AHE3_B/C suitable for under-hood and body electronics in passenger vehicles and commercial vehicles.
What is the maximum clamping voltage of 1N6290AHE3_B/C during a surge event?
The maximum clamping voltage (VC) of 1N6290AHE3_B/C is 85.0 V at 17.6 A peak pulse current (IPPM), measured under the standard 10/1000 µs waveform. This value represents the worst-case voltage seen by downstream circuitry during a full-rated 1500 W transient, directly determining whether connected ICs remain within their absolute maximum voltage limits.
How does the thermal resistance of 1N6290AHE3_B/C affect its surge capability?
With a junction-to-lead thermal resistance (RθJL) of 15.4 °C/W, the 1N6290AHE3_B/C efficiently transfers heat from the silicon die to the PCB copper or heatsink via its leads. This low RθJL enables sustained 1500 W surge handling without significant thermal derating at lead temperatures up to 75 °C, unlike higher-RθJA packages that require large copper areas for equivalent performance.
Can 1N6290AHE3_B/C be used in bidirectional configurations?
No, 1N6290AHE3_B/C is a unidirectional TVS diode, indicated by the "A" suffix (not "CA"). It conducts only in reverse bias above VBR and blocks forward current beyond ~3.5 V. For bidirectional protection, Vishay offers variants such as 1N6290CAHE3_B/C - which shares the same package and power rating but clamps symmetrically in both polarities.
1N6290AHE3_B/C Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-201AA, DO-27, Axial
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 53V
- Voltage - Breakdown (Min):
- 58.9V
- Voltage - Clamping (Max) @ Ipp:
- 85V
- Current - Peak Pulse (10/1000µs):
- 17.6A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 1.5KE
1N6290AHE3_B/C FAQ
1.How can I place an order for 1N6290AHE3_B/C through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6290AHE3_B/C on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6290AHE3_B/C reliable?
The price and inventory of 1N6290AHE3_B/C are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6290AHE3_B/C is usually 5 days.
3.What payment methods are accepted for 1N6290AHE3_B/C?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6290AHE3_B/C transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6290AHE3_B/C?
1N6290AHE3_B/C orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6290AHE3_B/C order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6290AHE3_B/C?
For technical support, including 1N6290AHE3_B/C datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6290AHE3_B/C requirements.
6.How does Aetrix verify that 1N6290AHE3_B/C is sourced from the original manufacturer or authorized distributors?
All 1N6290AHE3_B/C products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6290AHE3_B/C meets industry standards.
7.What is the process for return or replacement of 1N6290AHE3_B/C?
All 1N6290AHE3_B/C units undergo pre-shipment inspection (PSI). If there is an issue with 1N6290AHE3_B/C, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6290AHE3_B/C part is unused and in its original packaging.
Return procedure for 1N6290AHE3_B/C:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N6290AHE3_B/C Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
