Vishay General Semiconductor - Diodes Division 1N6303AHE3_A/D
- Part No.:
- 1N6303AHE3_A/D
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-201AA, DO-27, Axial
- Datasheet:
-
1N6303AHE3_A/D.pdf
- Description:
- TVS DIODE 171VWM 274VC 1.5KE
- Quantity:
- Payment:

- Shipping:

Inventory:3,701
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
1N6303AHE3_A/D from Vishay General Semiconductor is a unidirectional Transient Voltage Suppressor (TVS) diode designed for primary-side overvoltage protection in power rails and signal lines. It features a 190 V to 210 V breakdown voltage (VBR), 171 V maximum standoff voltage (VWM), 274 V clamping voltage at 5.5 A peak pulse current, 1500 W peak pulse power (10/1000 µs), and operates across –55 °C to +175 °C junction temperature. It is used to protect MOSFETs, ICs, and sensor interfaces against lightning-induced surges and inductive switching transients in industrial power supplies.
For engineers reviewing the 1N6303AHE3_A/D datasheet, 1N6303AHE3_A/D pinout, 1N6303AHE3_A/D application, or 1N6303AHE3_A/D equivalent, this page delivers verified electrical parameters, AEC-Q101 qualification status, thermal resistance (RθJL = 15.4 °C/W), JEDEC 1.5KE package dimensions, and real-world clamping behavior under standardized 10/1000 µs surge conditions.
Technical Context
This TVS diode employs a glass-passivated silicon junction optimized for fast transient response (<1 ns) and low incremental surge resistance. Its unidirectional polarity enables cathode-referenced clamping on DC-biased lines, with a 3.5 V forward voltage at 100 A only applicable to devices ≤1.5KE220A - confirmed for 1N6303AHE3_A/D per datasheet note (3).
The device complies with UL 497B recognition (QVGQ2) and meets JESD 201 Class 2 whisker testing (HE3 suffix). Thermal performance is defined by RθJA = 75 °C/W and RθJL = 15.4 °C/W, supporting lead-mounted dissipation up to 6.5 W at TL = 75 °C per Figure 5.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 190 V / 210 V - ensures reliable conduction onset above normal operating voltage while avoiding false triggering |
| VWM | 171 V - maximum continuous reverse voltage before leakage exceeds 1 µA, defining safe DC blocking margin |
| VC @ IPPM | 274 V - clamped voltage during 5.5 A 10/1000 µs surge, limiting downstream component stress |
| PPPM | 1500 W - peak surge power handling capability under standard lightning-surge waveform |
| TJ range | –55 °C to +175 °C - supports operation in automotive engine compartments and industrial motor drives |
| RθJL | 15.4 °C/W - enables accurate thermal design when mounted with 0.375" (9.5 mm) lead length |
| AEC-Q101 | Qualified - validated for automotive-grade reliability including temperature cycling and HTRB |
Pinout & Package
Package: JEDEC 1.5KE molded epoxy case (Case Style 1.5KE), RoHS-compliant, matte tin-plated leads. Dimensions: 1.0" × 1.0" body, 0.375" lead length, 0.042" lead diameter.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry point during forward conduction | Connected to lower-potential side of protected line; defines unidirectional clamping direction |
| Cathode | Current exit point during reverse-biased clamping | Marked with color band; tied to higher-potential rail (e.g., VIN) to shunt surges to ground |
Key Features
| Feature | Design Value |
|---|---|
| Glass passivated junction | Enables stable VBR tolerance (±5 %) and long-term leakage stability under humidity and bias stress |
| 1500 W peak pulse power (10/1000 µs) | Supports IEC 61000-4-5 Level 4 surge immunity (4 kV line-to-ground) without derating |
| AEC-Q101 qualification | Validates suitability for automotive powertrain and body electronics with zero early-life failure risk |
| UL 497B recognition (QVGQ2) | Permits direct use in telecom and industrial equipment requiring certified surge protection |
| Low incremental surge resistance | Minimizes VC overshoot during fast-rising transients (e.g., ESD or inductive kick) |
Applications
| Industrial Motor Drives | Automotive Power Distribution |
|---|---|
Use Scenario: Protection of gate drivers and MCU inputs against flyback voltage from relay coils and solenoid loads. IC Role / Device Role / Timing Role: Unidirectional TVS placed between high-side switch output and ground to clamp inductive spikes within 1 ns. Use Value: Limits transient voltage to ≤274 V, preventing gate oxide rupture in 600 V MOSFETs and latch-up in 3.3 V logic interfaces. |
Use Scenario: Input rail protection in body control modules exposed to load-dump and jump-start events. IC Role / Device Role / Timing Role: Primary clamping device on 12 V battery feed, coordinated with upstream fuse and downstream LDO. Use Value: Absorbs 1500 W surge energy without degradation, maintaining system uptime during ISO 16750-2 pulse 5a/b tests. |
| Telecom Power Feeds | Industrial Sensor Signal Conditioning |
Use Scenario: Surge suppression on -48 V DC power inputs of remote radio units and DSLAM line cards. IC Role / Device Role / Timing Role: Cathode-connected to -48 V rail, anode to chassis ground - enabling negative-rail clamping. Use Value: Withstands repeated 10/1000 µs surges up to 5.5 A while holding leakage below 1 µA at –41 V reverse bias. |
Use Scenario: Protection of analog front-end inputs (e.g., 4–20 mA loop receivers) in factory automation PLCs. IC Role / Device Role / Timing Role: Low-capacitance TVS placed directly at connector interface, before precision op-amp input stage. Use Value: Clamps transients to 274 V before they exceed ADC input absolute maximum rating (typically ±36 V), preserving measurement integrity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ200A | Lower PPPM (600 W), smaller SMB package (RθJL = 25 °C/W), same VBR range (190–210 V) | Not rated for AEC-Q101; limited to commercial-grade board-level protection | Select when space-constrained layouts preclude 1.5KE footprint and surge energy is ≤600 W |
| 1.5KE200AHE3_B | Identical electrical specs; differs only in revision code (B vs. A) and tape/reel packaging (C vs. D) | No functional difference; both meet AEC-Q101 and UL 497B | Choose based on inventory availability - B revision offers same performance with updated manufacturing traceability |
Compared with 1N6303AHE3_A/D, SMBJ200A trades 1500 W surge capacity for compactness and cost, while 1.5KE200AHE3_B provides identical protection with alternate packaging logistics - neither is pin-compatible due to differing case styles (1.5KE vs. SMB), but both serve the same circuit function with verified parameter alignment.
Availability
1N6303AHE3_A/D is available at Aetrix Electronics and suitable for industrial motor drives, automotive power distribution modules, and telecom power feeds requiring stable component supply with full AEC-Q101 and UL 497B compliance.
Supply support for 1N6303AHE3_A/D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor designs discrete semiconductors for high-reliability power management, protection, and sensing applications, with global manufacturing and AEC-Q101 validation infrastructure.
The 1N6303AHE3_A/D belongs to the TRANSZORB® 1.5KE family, engineered specifically for robust, high-energy transient suppression in harsh environments - targeting automotive, industrial, and telecom systems where failure is not an option.
FAQ
What is the breakdown voltage tolerance for 1N6303AHE3_A/D?
The 1N6303AHE3_A/D has a specified breakdown voltage range of 190 V to 210 V at 1.0 mA test current (IT), corresponding to a ±5 % tolerance around the nominal 200 V rating. This tight tolerance ensures consistent clamping onset across production lots and supports precise coordination with downstream overvoltage protection circuits.
Is 1N6303AHE3_A/D suitable for automotive applications?
Yes, 1N6303AHE3_A/D is AEC-Q101 qualified and explicitly listed in Vishay's qualified part list for automotive use. Its –55 °C to +175 °C operating range, 1500 W surge capability, and UL 497B recognition make it appropriate for engine control units, body electronics, and power distribution centers subjected to ISO 16750-2 load-dump and jump-start stress.
What is the maximum clamping voltage of 1N6303AHE3_A/D under surge conditions?
The maximum clamping voltage (VC) of 1N6303AHE3_A/D is 274 V at 5.5 A peak pulse current (IPPM) using the standard 10/1000 µs waveform. This value is measured per Figure 7 in the datasheet and defines the upper voltage limit imposed on protected circuitry during worst-case surge events.
Does 1N6303AHE3_A/D have bidirectional capability?
No, 1N6303AHE3_A/D is a unidirectional TVS diode. Its polarity is marked by a cathode band, and it conducts only during reverse-bias overvoltage events. Bidirectional variants in the same family use the "CA" suffix (e.g., 1.5KE200CA); the "A" suffix in 1N6303AHE3_A/D confirms unidirectional configuration.
What is the thermal resistance from junction to lead for 1N6303AHE3_A/D?
The typical thermal resistance from junction to lead (RθJL) for 1N6303AHE3_A/D is 15.4 °C/W, measured with 0.375" (9.5 mm) lead length per JEDEC standards. This value enables accurate thermal modeling when the device is soldered directly to PCB copper pours or heatsinked leads in high-power surge scenarios.
1N6303AHE3_A/D Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-201AA, DO-27, Axial
- Series:
- TransZorb®
- Packaging:
- Tape & Box (TB)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 171V
- Voltage - Breakdown (Min):
- 190V
- Voltage - Clamping (Max) @ Ipp:
- 274V
- Current - Peak Pulse (10/1000µs):
- 5.5A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 1.5KE
1N6303AHE3_A/D FAQ
1.How can I place an order for 1N6303AHE3_A/D through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6303AHE3_A/D on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6303AHE3_A/D reliable?
The price and inventory of 1N6303AHE3_A/D are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6303AHE3_A/D is usually 5 days.
3.What payment methods are accepted for 1N6303AHE3_A/D?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6303AHE3_A/D transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6303AHE3_A/D?
1N6303AHE3_A/D orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6303AHE3_A/D order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6303AHE3_A/D?
For technical support, including 1N6303AHE3_A/D datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6303AHE3_A/D requirements.
6.How does Aetrix verify that 1N6303AHE3_A/D is sourced from the original manufacturer or authorized distributors?
All 1N6303AHE3_A/D products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6303AHE3_A/D meets industry standards.
7.What is the process for return or replacement of 1N6303AHE3_A/D?
All 1N6303AHE3_A/D units undergo pre-shipment inspection (PSI). If there is an issue with 1N6303AHE3_A/D, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6303AHE3_A/D part is unused and in its original packaging.
Return procedure for 1N6303AHE3_A/D:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N6303AHE3_A/D Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

