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onsemi 1N6373RL4
- Part No.:
- 1N6373RL4
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- DO-201AD, Axial
- Datasheet:
-
1N6373RL4.pdf
- Description:
- TVS DIODE 5V 9.4V AXIAL
- Quantity:
- Payment:
- Shipping:
Inventory:6,146
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Product details
Overview
1N6373RL4 from onsemi is a unidirectional transient voltage suppressor (TVS) diode in axial-leaded Surmetic plastic package, designed for parallel clamping of high-energy transients. It features 5.0 V working peak reverse voltage (VRWM), 1500 W peak pulse power at 1 ms, 9.4 V maximum clamping voltage at 160 A peak pulse current, <1 ns response time, and ESD rating >16 kV per HBM.
For engineers reviewing the 1N6373RL4 datasheet, pinout, applications, or equivalent options, key selection criteria include clamping voltage margin relative to protected IC VDD, surge current handling in power supply input stages, thermal derating above 75°C lead temperature, and axial-lead layout constraints for low-inductance placement near connectors or I/O lines.
Technical Context
The 1N6373RL4 operates as a Zener-based avalanche clamp, triggered when reverse voltage exceeds its 6.0–7.5 V breakdown range (VBR @ 1.0 A). Its low dynamic impedance and sub-nanosecond turn-on enable effective suppression of ESD, lightning-induced surges, and inductive switching spikes in DC power rails.
It is rated for non-repetitive 1500 W pulses (8.3 ms sine or square wave), with steady-state dissipation limited to 5.0 W at TL ≤ 75°C and thermal resistance RJL = 20°C/W. The device exhibits <5 µA leakage above 10 V and is Pb-free, packaged in CASE 41A with cathode band polarity marking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 5.0 V - Maximum continuous reverse operating voltage before clamping begins; must exceed circuit's normal DC rail voltage. |
| VBR @ IT = 1 A | 6.0–7.5 V - Breakdown threshold tolerance; defines minimum clamping onset point under standardized test conditions. |
| VC @ IPP = 160 A | 9.4 V - Maximum clamped voltage during 1500 W transient; determines worst-case overvoltage seen by downstream components. |
| IPP | 160 A - Peak pulse current capability at 1 ms; validates protection against IEC 61000-4-5 Level 4 surges (4 kV/2 Ω). |
| Response Time | <1 ns - Avalanche turn-on speed; ensures clamping initiates before most CMOS/MOS logic thresholds are exceeded. |
| ESD Rating (HBM) | >16 kV - Human Body Model robustness; qualifies for direct interface protection in industrial control I/O ports. |
| RJL | 20 °C/W - Junction-to-lead thermal resistance; used to calculate junction temperature rise under sustained pulse duty cycles. |
Pinout & Package
1N6373RL4 is housed in an axial-leaded CASE 41A plastic package (Surmetic), with cathode identified by a colored band. Lead length is standardized for through-hole mounting; maximum soldering temperature is 260°C at 1/16″ from case for 10 seconds.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Reference node for reverse-biased operation | Connected to system ground or low-side return path; forms clamping loop with cathode to protected line. |
| Cathode | Transient voltage sensing and clamping node | Connected to protected signal/power line; conducts surge current to ground when VAK exceeds VBR. |
Key Features
| Feature | Design Value |
|---|---|
| 1500 W peak pulse power | Supports IEC 61000-4-5 surge immunity up to 4 kV in 2 Ω/12 Ω source impedance configurations. |
| Clamping voltage ≤9.4 V at 160 A | Ensures safe overvoltage margin below 12 V logic or microcontroller I/O absolute maximum ratings. |
| Leakage current <5 µA @ VRWM | Minimizes standby power loss and avoids false triggering in high-impedance sensor or reference circuits. |
| Pb-Free Surmetic axial package | Enables RoHS-compliant through-hole assembly without lead finish compatibility concerns. |
| ESD rating >16 kV (HBM) | Eliminates need for additional ESD protection on front-panel buttons, switches, or external connector pins. |
Applications
| Industrial Power Supply Input Protection | Medical Equipment ESD Shielding |
|---|---|
Use Scenario: 24 V DC input stage of programmable logic controller (PLC) power module exposed to field wiring surges. IC Role / Device Role / Timing Role: Unidirectional TVS diode placed across input terminals to clamp induced transients before they reach upstream rectifier and regulator ICs. Use Value: Limits voltage excursion to ≤9.4 V during 160 A surge, preventing latch-up or gate oxide damage in 30 V-rated MOSFETs and linear regulators. | Use Scenario: Front-panel USB and analog sensor ports on diagnostic imaging equipment subject to clinical ESD events. IC Role / Device Role / Timing Role: Standoff protector on low-speed data and power lines, absorbing HBM discharges before reaching isolated ADCs or microcontrollers. Use Value: Withstands >16 kV contact discharge without degradation, maintaining signal integrity and avoiding firmware resets during patient interaction. |
| Communication System DC Bias Lines | Automotive Aftermarket Control Modules |
Use Scenario: +5 V bias rail feeding RS-485 transceivers in industrial Ethernet gateways installed in electrically noisy factory environments. IC Role / Device Role / Timing Role: Fast-response shunt clamp on power rail, activated within <1 ns to suppress coupled noise from adjacent motor drives or VFDs. Use Value: Prevents transceiver latch-up during repetitive 1 kV/500 A surge events, ensuring uninterrupted Modbus RTU communication. | Use Scenario: 12 V battery-supplied HVAC control unit mounted near vehicle ignition systems and alternator ripple sources. IC Role / Device Role / Timing Role: Primary overvoltage suppressor on main power entry, coordinated with fuse and LC filter to meet ISO 7637-2 Pulse 1/2a/3a requirements. Use Value: Clamps load dump transients to ≤9.4 V, protecting 16-bit MCU and CAN transceiver without requiring active crowbar circuitry. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ5.0A | Surface-mount SMB package; 5.0 V VRWM; 9.2 V VC @ 64.5 A; lower IPP (64.5 A vs. 160 A) | Designed for PCB space-constrained designs; not suitable for same surge energy level without parallel staging | Select when board area is critical and surge threat is limited to IEC 61000-4-2 ESD only |
| 1N6374RL4 | Same package and construction; higher VRWM (8.0 V); higher VC (15 V @ 100 A); lower IPP (100 A) | Better suited for 12 V systems where 5 V clamping would cause false triggering during normal ripple | Choose for 12 V rail protection where tighter clamping margin is unnecessary and higher standoff is preferred |
Compared with SMBJ5.0A, the 1N6373RL4 delivers 2.5× higher surge current capacity in axial form, while compared with 1N6374RL4, it provides tighter clamping for 5 V logic domains-making it optimal for legacy industrial controllers and medical peripherals with strict low-voltage IC protection requirements.
Availability
1N6373RL4 is available at Aetrix Electronics and suitable for industrial power supply input protection, medical equipment ESD shielding, and communication system DC bias line protection requiring stable component supply and long-term obsolescence management.
Supply support for 1N6373RL4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power management, analog, sensors, and connectivity solutions for automotive, industrial, cloud, and medical markets.
The 1N6373RL4 belongs to the Mosorb Zener Transient Voltage Suppressor family, engineered specifically for high-reliability, high-surge-capacity protection of voltage-sensitive electronics in harsh electromagnetic environments.
FAQ
What is the maximum clamping voltage of the 1N6373RL4 during a 1500 W transient event?
The 1N6373RL4 has a maximum clamping voltage (VC) of 9.4 V when subjected to its rated peak pulse current of 160 A, corresponding to the 1500 W transient condition defined in Figure 5 of the datasheet. This value is measured under standardized 1 ms pulse conditions and represents the worst-case overvoltage imposed on protected circuitry during surge conduction. The 1N6373RL4 maintains this clamping performance across its specified operating temperature range.
Is the 1N6373RL4 compatible with lead-free reflow soldering processes?
No-the 1N6373RL4 is an axial-leaded through-hole device intended for wave or hand soldering, not reflow. Its Pb-Free qualification refers to lead finish compliance (RoHS), not reflow compatibility. The datasheet specifies a maximum soldering temperature of 260°C at 1/16″ from the case for 10 seconds. Reflow profiles exceeding this thermal limit risk internal bond wire damage or package cracking. The 1N6373RL4 must be mounted prior to any reflow steps in mixed-technology assemblies.
How does the 1N6373RL4 differ from the 1N6373 (non-RL4) variant?
The "RL4" suffix in 1N6373RL4 indicates tape-and-reel packaging (1500 units per reel) and Pb-Free construction, whereas the base 1N6373 part number denotes bulk packaging (500 units per box) and may include legacy leaded options. Electrically and thermally, the 1N6373RL4 is identical to 1N6373-same VRWM, VBR, VC, and surge ratings. Both share identical CASE 41A mechanical dimensions and electrical behavior; only packaging and environmental compliance differ.
Can the 1N6373RL4 be used in bidirectional protection configurations?
No-the 1N6373RL4 is explicitly a unidirectional TVS diode, optimized for clamping positive transients on grounded systems. Its Zener avalanche structure conducts only in reverse bias; forward conduction is limited to 3.5 V at 100 A and offers no meaningful surge suppression. For AC or bipolar signal lines, a dedicated bidirectional device such as the P6SMB6.8CA or two back-to-back 1N6373RL4 units (with series blocking diodes) would be required-not the 1N6373RL4 alone.
What is the thermal derating behavior of the 1N6373RL4 above 75°C lead temperature?
Per the datasheet, the 1N6373RL4's steady-state power dissipation (PD) is rated at 5.0 W up to TL = 75°C, then derates linearly at 20 mW/°C beyond that point. At 100°C lead temperature, PD drops to 4.5 W. This derating applies only to continuous or high-duty-cycle conditions-not to single-event transients. The 1N6373RL4 retains full 1500 W pulse capability regardless of ambient temperature, as pulse energy is dominated by junction thermal mass, not lead conduction.
1N6373RL4 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- DO-201AD, Axial
- Series:
- 1N6373
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 5V (Max)
- Voltage - Breakdown (Min):
- 6V
- Voltage - Clamping (Max) @ Ipp:
- 9.4V
- Current - Peak Pulse (10/1000µs):
- 160A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- Axial
1N6373RL4 FAQ
1.How can I place an order for 1N6373RL4 through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6373RL4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6373RL4 reliable?
The price and inventory of 1N6373RL4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6373RL4 is usually 5 days.
3.What payment methods are accepted for 1N6373RL4?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6373RL4 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6373RL4?
1N6373RL4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6373RL4 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6373RL4?
For technical support, including 1N6373RL4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6373RL4 requirements.
6.How does Aetrix verify that 1N6373RL4 is sourced from the original manufacturer or authorized distributors?
All 1N6373RL4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6373RL4 meets industry standards.
7.What is the process for return or replacement of 1N6373RL4?
All 1N6373RL4 units undergo pre-shipment inspection (PSI). If there is an issue with 1N6373RL4, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6373RL4 part is unused and in its original packaging.
Return procedure for 1N6373RL4:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N6373RL4 Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
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