onsemi 1N6374G

Overview

1N6374G from ON Semiconductor is a unidirectional transient voltage suppressor (TVS) diode designed for parallel clamping protection of sensitive electronics against high-energy surges. It features a 8.0 V working peak reverse voltage (VRWM), 15 A peak pulse current (IPP), 11.3 V clamping voltage (VC) at IPP, <25 µA leakage at VRWM, and sub-1 ns response time. It is used in power supply input stages to safeguard downstream regulators and controllers.

For engineers reviewing the 1N6374G datasheet, pinout, applications, or equivalent options, key selection criteria include clamping voltage margin relative to protected IC V_MAX, surge current capability under IEC 61000-4-5 waveforms, thermal derating above 75°C lead temperature, and axial lead mechanical compatibility with through-hole PCB layouts.

Technical Context

The 1N6374G operates as a silicon avalanche diode with sharp Zener-like breakdown characteristics, enabling fast transition from high-impedance blocking to low-impedance clamping mode. Its 1500 W peak power rating is defined for a 1 ms 10/1000 µs waveform, and its 20 °C/W junction-to-lead thermal resistance supports sustained surge handling when leads are maintained ≤75°C.

It exhibits unidirectional polarity with cathode band marking, requires no bias circuitry, and delivers stable clamping performance across -65°C to +175°C operating range. The device's low dynamic impedance (<1 Ω typical near VC) ensures minimal voltage overshoot during transient events when mounted with short, low-inductance traces.

Key Specifications

Pinout & Package

Package: Axial-leaded plastic case (ON Semiconductor Case 41A), void-free thermosetting material, Pb-free finish, cathode indicated by colored band.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Compared with SMBJ8.0A and P6KE8.0A, the 1N6374G provides 2.5× higher peak power and tighter clamping (11.3 V vs. ≥12.0 V), making it preferred for industrial-grade 1500 W surge immunity where axial lead reliability and thermal mass are prioritized over footprint size.

Availability

1N6374G is available at Aetrix Electronics and suitable for industrial power supplies, medical diagnostic equipment, programmable logic controllers, and automotive body control modules requiring stable component supply and long-term obsolescence management.

Supply support for 1N6374G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in power management, analog, sensors, and connectivity solutions for automotive, industrial, cloud, and medical markets.

The 1N6373–1N6381 series was engineered specifically for high-reliability transient suppression in harsh environments, emphasizing robust surge handling, wide temperature operation, and axial-lead mechanical durability for mission-critical power and signal lines.

FAQ

What is the maximum clamping voltage of the 1N6374G under a 15 A transient?

The 1N6374G has a maximum clamping voltage (VC) of 11.3 V when subjected to its rated 15 A peak pulse current (IPP), measured per the 1 ms 10/1000 µs waveform defined in the ON Semiconductor datasheet. This value is guaranteed across the full operating temperature range and forms the basis for determining safe voltage margins in protected circuits. The 1N6374G maintains this clamping performance without degradation during repetitive surge events when lead temperature is held ≤75°C.

Is the 1N6374G RoHS-compliant and lead-free?

Yes, the "G" suffix in 1N6374G explicitly denotes a Pb-free package per ON Semiconductor's RoHS compliance program. The device uses lead-free terminations and conforms to JEDEC J-STD-020 moisture sensitivity level (MSL) requirements. No lead or cadmium is present in the die attach, mold compound, or external plating, and full compliance documentation is available through ON Semiconductor's official product page and environmental reports.

Can the 1N6374G be used in bidirectional protection configurations?

No, the 1N6374G is strictly unidirectional and must be oriented with cathode toward the protected line and anode to ground. It does not provide symmetrical clamping for AC signals or bipolar transients. For bidirectional protection, two 1N6374G devices may be connected in series opposing configuration, but this increases forward voltage drop and is not recommended. Use dedicated bidirectional TVS parts such as SMAJ8.0CA if AC-line or differential-signal protection is required.

What is the thermal resistance specification for the 1N6374G?

The 1N6374G has a junction-to-lead thermal resistance (R_JL) of 20 °C/W, measured with 3/8″ lead length at TL ≤ 25°C. This parameter governs how effectively heat generated during surge events transfers from the silicon die to the PCB copper pour or chassis. To maintain reliability, average power dissipation must be limited to 5.0 W at TL = 75°C, with linear derating above that temperature per the published curve in Figure 2 of the datasheet.

How does the 1N6374G compare to the 1N6373G in terms of voltage ratings?

The 1N6374G has a higher working peak reverse voltage (VRWM) of 8.0 V versus 5.0 V for the 1N6373G, resulting in a correspondingly higher clamping voltage (11.3 V vs. 9.4 V) and breakdown voltage (9.4 V vs. 6.0 V). Both share identical package, surge rating (1500 W), and response time, but the 1N6374G is selected when protecting 8 V nominal rails or systems requiring greater standoff margin above 5 V logic levels, whereas the 1N6373G suits 3.3–5 V domains with tighter clamping headroom.