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onsemi 1N6381G
- Part No.:
- 1N6381G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- DO-201AD, Axial
- Datasheet:
-
1N6381G.pdf
- Description:
- TVS DIODE 45VWM 78.9VC AXIAL
- Quantity:
- Payment:
- Shipping:
Inventory:8,700
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Product details
Overview
1N6381G from onsemi is a unidirectional 1500 W peak power TVS diode designed for transient overvoltage protection in DC power rails and signal lines. It features a 45 V working peak reverse voltage (VRWM), 78.9 A peak pulse current (IPP), 70 V maximum clamping voltage (VC) at IPP, <2 µA leakage above 10 V, and sub-1 ns response time. It is used to safeguard power supplies, industrial controls, and medical equipment against ESD and lightning-induced surges.
For engineers reviewing the 1N6381G datasheet, pinout, applications, or equivalent options, key selection criteria include clamping voltage margin relative to system operating voltage, surge current capability under 1 ms pulses, thermal derating at elevated lead temperatures, and axial-leaded mechanical compatibility with through-hole PCB layouts.
Technical Context
The 1N6381G operates as a silicon avalanche diode with sharp Zener-like breakdown characteristics, optimized for fast transient suppression rather than voltage regulation. Its low dynamic impedance (<1 Ω typical near VC) ensures stable clamping during high-di/dt events, and its Pb-free Surmetic axial package (Case 41A) supports manual and wave soldering at 260°C for 10 seconds.
It is rated for non-repetitive 1 ms pulses up to 1500 W at 25°C ambient, with linear derating to zero power above 175°C junction temperature. Steady-state dissipation is limited to 5.0 W at 75°C lead temperature, with thermal resistance of 20°C/W from junction to lead - critical for sustained surge duty cycle management.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 45 V - Maximum continuous reverse operating voltage before clamping begins; must exceed system DC rail or signal swing. |
| VC @ IPP | 70 V - Clamping voltage at 78.9 A peak pulse current; defines worst-case protected-circuit overvoltage during surge. |
| IPP | 78.9 A - Peak pulse current supported under 1 ms 8.3 ms half-sine waveform; determines minimum series impedance required. |
| IR @ VRWM | <2 µA - Reverse leakage at 45 V; ensures negligible standby power loss and no false triggering in high-impedance circuits. |
| Response Time | <1 ns - Time from transient onset to clamping activation; enables protection of fast-edge digital and analog interfaces. |
| ESD Rating | Class 3 (>16 kV HBM) - Confirmed robustness against human-body model electrostatic discharge events. |
| RJL | 20 °C/W - Junction-to-lead thermal resistance; dictates heatsinking requirements when handling repetitive surges. |
Pinout & Package
Package: Axial-leaded Surmetic plastic case (ON Semiconductor Case 41A), void-free thermosetting material, cathode indicated by band. Dimensions: A = 8.5–9.5 mm length, B = 4.8–5.3 mm diameter, D = 0.96–1.06 mm lead diameter, K = 25.4 mm lead spacing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current sink during reverse-biased clamping | Connected to ground or low-impedance return path; carries full surge current during transient event. |
| Cathode | Protected circuit node connection | Connected to line being protected (e.g., +12 V rail); voltage referenced to anode during clamping. |
Key Features
| Feature | Design Value |
|---|---|
| 1500 W peak pulse power | Supports IEC 61000-4-5 Level 4 (4 kV/2 Ω) surge testing without external series impedance redesign. |
| Clamping ratio VC/VRWM = 1.56 | Provides tight overvoltage margin (25% headroom) for 45 V systems, reducing risk of downstream component overstress. |
| Pb-Free Surmetic package | Meets RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile compatibility for automated assembly. |
| Low zener impedance <1 Ω | Minimizes voltage overshoot during fast-rising transients (e.g., EFT bursts), improving protection fidelity. |
| Operating temp range –65°C to +175°C | Enables deployment in under-hood automotive, industrial motor drives, and outdoor telecom infrastructure. |
Applications
| Industrial Power Supply Protection | Medical Equipment Surge Suppression |
|---|---|
Use Scenario: Protecting 48 V DC input stage of programmable logic controller (PLC) power module against induced lightning surges on factory floor wiring. IC Role / Device Role / Timing Role: Standoff TVS diode placed across input terminals, conducting only during >45 V transients to clamp energy into chassis ground. Use Value: Limits transient voltage to ≤70 V for <1 ms, preventing damage to upstream rectifier bridge and downstream DC/DC controller ICs. |
Use Scenario: Safeguarding patient-connected analog front-end inputs in portable ECG monitor against defibrillator-induced coupling and ESD. IC Role / Device Role / Timing Role: Primary overvoltage clamp on isolated sensor interface lines, coordinated with secondary RC filtering. Use Value: Withstands >16 kV HBM ESD and 1 kV/50 Ω surge per IEC 60601-1-2, preserving signal integrity and patient safety compliance. |
| Telecom Line Interface Protection | Automotive Body Control Module Input |
Use Scenario: Shielding RS-485 transceiver supply pins in remote terminal unit (RTU) deployed along overhead utility lines. IC Role / Device Role / Timing Role: Unidirectional TVS on VCC rail, triggered by induced surges from nearby lightning strikes or switching transients. Use Value: Clamps 78.9 A surge within 1 ns, maintaining transceiver operation and avoiding latch-up or permanent failure. |
Use Scenario: Protecting 12 V switched input of BCM microcontroller GPIO monitoring door lock actuator status. IC Role / Device Role / Timing Role: Low-leakage (2 µA) standoff protector ensuring no false wake-up during sleep mode while surviving load-dump pulses. Use Value: Survives ISO 7637-2 Pulse 5a (75 V/350 ms) with minimal thermal stress due to 20°C/W RJL and axial thermal path. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ45A | Surface-mount SMB package; 45 V VRWM, 64.5 V VC @ 64.5 A; lower IPP (64.5 A vs. 78.9 A). | Requires PCB redesign for SMT placement; better suited for space-constrained consumer electronics vs. industrial through-hole assemblies. | Select when board area is constrained and surge duty is less severe; verify layout inductance does not degrade clamping performance. |
| 1N6380G | Same package and construction; 36 V VRWM, 54.3 V VC @ 65.2 A; lower clamping voltage but reduced working voltage margin. | Used where protected circuit operates at ≤36 V DC and tighter clamping is prioritized over voltage headroom. | Choose for 24–36 V systems needing lower VC; avoid if nominal rail exceeds 36 V to prevent premature conduction. |
Compared with SMBJ45A and 1N6380G, the 1N6381G provides the highest VRWM in its family (45 V) and greatest single-pulse energy handling (1500 W), making it optimal for 48 V industrial and telecom power rails where voltage margin and surge robustness are primary design constraints.
Availability
1N6381G is available at Aetrix Electronics and suitable for industrial power supplies, medical diagnostic equipment, telecom infrastructure, and automotive body control modules requiring stable component supply and long-term obsolescence management.
Supply support for 1N6381G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensors, and connectivity solutions for automotive, industrial, cloud, and medical markets.
The 1N6381G belongs to the Mosorb Zener Transient Voltage Suppressor family, engineered specifically for high-energy, low-inductance overvoltage protection in harsh electromagnetic environments where reliability and repeatable clamping performance are mission-critical.
FAQ
What is the maximum clamping voltage of the 1N6381G under surge conditions?
The 1N6381G has a maximum clamping voltage (VC) of 70 V when subjected to its rated peak pulse current of 78.9 A under a 1 ms pulse waveform. This value is measured per Figure 5 in the official datasheet and represents the worst-case voltage seen by the protected circuit during a full-rated transient event. Designers must ensure this clamping level remains below the absolute maximum rating of downstream components.
Can the 1N6381G be used in bidirectional protection configurations?
No, the 1N6381G is a unidirectional TVS diode and is not rated for bidirectional operation. Its electrical characteristics - including breakdown voltage, clamping behavior, and leakage - are specified only for reverse-bias conduction. For AC or dual-polarity signal lines, a dedicated bidirectional device such as the P6SMBJ45CA or discrete back-to-back configuration is required instead of the 1N6381G.
What is the thermal resistance and how does it affect 1N6381G reliability in repeated surge events?
The 1N6381G has a junction-to-lead thermal resistance (RJL) of 20°C/W. During repetitive surges, heat accumulates in the junction; without adequate lead heatsinking or airflow, junction temperature can exceed 175°C, causing parametric shift or failure. For duty cycles >0.1%, average power must be limited using Figure 7 derating curves - a critical consideration when specifying the 1N6381G for cyclic industrial equipment.
Is the 1N6381G compliant with RoHS and REACH regulations?
Yes, the "G" suffix in 1N6381G explicitly denotes a Pb-free Surmetic package compliant with EU RoHS Directive 2011/65/EU and REACH SVHC requirements. The device uses lead-free terminations and halogen-free molding compound, and its solderability is validated per J-STD-020 for peak temperatures up to 260°C - confirmed in the "Mechanical Characteristics" section of the official 1N6373/D datasheet.
How does the 1N6381G compare to standard Zener diodes for overvoltage protection?
Unlike general-purpose Zener diodes, the 1N6381G is optimized for transient suppression: it delivers 1500 W peak power handling, sub-1 ns response, and controlled dynamic impedance - features absent in standard Zeners rated only for steady-state regulation. Standard Zeners cannot safely absorb IEC 61000-4-5 surges and may fail catastrophically under the same conditions where the 1N6381G maintains reliable clamping.
1N6381G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- DO-201AD, Axial
- Series:
- Mosorb™
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 45V
- Voltage - Breakdown (Min):
- 52.9V
- Voltage - Clamping (Max) @ Ipp:
- 78.9V
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- Axial
1N6381G FAQ
1.How can I place an order for 1N6381G through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6381G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6381G reliable?
The price and inventory of 1N6381G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6381G is usually 5 days.
3.What payment methods are accepted for 1N6381G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6381G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6381G?
1N6381G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6381G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6381G?
For technical support, including 1N6381G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6381G requirements.
6.How does Aetrix verify that 1N6381G is sourced from the original manufacturer or authorized distributors?
All 1N6381G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6381G meets industry standards.
7.What is the process for return or replacement of 1N6381G?
All 1N6381G units undergo pre-shipment inspection (PSI). If there is an issue with 1N6381G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6381G part is unused and in its original packaging.
Return procedure for 1N6381G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N6381G Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
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