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Microchip Technology 1N6476US/TR
- Part No.:
- 1N6476US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
1N6476US/TR.pdf
- Description:
- UNI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:395
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Product details
Overview
1N6476US/TR from Microsemi is a unidirectional transient voltage suppressor (TVS) diode in a hermetically sealed glass MELF package (Package G/D-5C), rated for 1500 W peak pulse power at 10/1000 µs, with a working peak standoff voltage of 51.6 V, clamping voltage of 78.5 V at 107 A, and operating temperature range of –55 °C to +175 °C. It delivers military-grade surge protection in aerospace, avionics, and high-reliability power supply interfaces.
For engineers reviewing the 1N6476US/TR datasheet, 1N6476US/TR pinout, 1N6476US/TR application, or 1N6476US/TR equivalent, key selection criteria include its MIL-PRF-19500/552 qualification, Category I metallurgical bond, voidless glass construction, ESD/EFT compliance per IEC61000-4-2/4-4, and secondary lightning protection capability per IEC61000-4-5.
Technical Context
This unidirectional TVS operates as a clamping device triggered above its 51.6 V working peak voltage, with a minimum breakdown voltage of 54.0 V at 1 mA. Its hard-glass MELF package enables stable thermal resistance (20.0 °C/W junction-to-end-cap) and supports 130 A forward surge current at 8.33 ms half-sine waveform.
The device uses triple-layer passivation and internal tungsten slugs bonded via Category I metallurgical process-ensuring mechanical robustness and radiation hardness per MicroNote 050. It is nonsensitive to ESD per MIL-STD-750 Method 1020 and qualified for JAN/JANTX/JANTXV screening under MIL-PRF-19500/552.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Pulse Power | 1500 W @ 10/1000 µs - sustains high-energy transients without failure in critical systems |
| Working Peak Voltage (VWM) | 51.6 V - maximum continuous reverse voltage before clamping activation |
| Clamping Voltage (VC) | 78.5 V @ 107 A - limits downstream circuit voltage during 10/1000 µs surge |
| Breakdown Voltage (VBR) | 54.0 V min @ 1 mA - ensures precise turn-on threshold for predictable protection |
| Leakage Current (ID) | 5 µA max @ 51.6 V - negligible standby power loss and signal integrity impact |
| Operating Temperature | –55 °C to +175 °C - supports deployment in extreme-environment avionics and downhole electronics |
| Thermal Resistance | 20.0 °C/W (junction-to-end-cap) - enables reliable heat dissipation on metal-core PCBs or chassis mounts |
Pinout & Package
1N6476US/TR is housed in a hermetically sealed voidless hard-glass MELF package designated Package G (also known as D-5C), with square-end-cap copper terminations plated with Sn/Pb. Polarity is marked by a cathode band on the body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal | Connected to lower-potential side of protected line; conducts during forward surge events up to 130 A |
| Cathode | Reverse-biased clamping terminal | Connected to higher-potential side; initiates avalanche clamping when reverse voltage exceeds 51.6 V |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates internal delamination risk under thermal cycling and humidity stress, ensuring long-term reliability in sealed enclosures |
| Category I metallurgical bond | Internal tungsten-copper bond structure qualified for MIL-PRF-19500/552, enabling operation at 175 °C junction temperature |
| Triple-layer passivation | Enhances surface insulation and moisture resistance, reducing leakage drift in high-humidity environments |
| MIL-PRF-19500/552 qualification | Validated for use in defense, space, and nuclear applications requiring traceable screening and lot-level documentation |
| Radiation hardness | Inherently resistant to total ionizing dose (TID) per Microsemi MicroNote 050-no derating required for low-earth orbit missions |
Applications
| Aerospace Power Bus Protection | Avionics Sensor Interface |
|---|---|
Use Scenario: Protecting 28 V DC aircraft power distribution bus against load dump and lightning-induced surges. IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed across bus rails to limit transient overvoltage to <78.5 V. Use Value: Prevents latch-up or burnout in downstream DC-DC converters and motor controllers during MIL-STD-704F-compliant surges. | Use Scenario: Shielding analog sensor inputs (e.g., RTD, thermocouple amplifiers) from ESD and cable discharge events. IC Role / Device Role / Timing Role: Standoff-mode protector on signal lines, leveraging 5 µA leakage to avoid measurement offset. Use Value: Maintains sub-µV baseline stability while surviving ±15 kV contact ESD per IEC61000-4-2 Level 4. |
| Downhole Oilfield Electronics | Military Vehicle Control Systems |
Use Scenario: Safeguarding telemetry modules in high-temperature drilling tools exposed to EFT and switching transients. IC Role / Device Role / Timing Role: Primary transient clamp on 4–20 mA loop power and data lines. Use Value: Operates continuously at 175 °C ambient with no derating-critical where active cooling is unavailable. | Use Scenario: Protecting CAN and RS-485 communication ports in armored vehicle ECUs from ISO 7637-2 pulses and EMP. IC Role / Device Role / Timing Role: Secondary-level protector after front-end filters, clamping residual spikes to safe levels. Use Value: Meets IEC61000-4-5 Level 3 (1 kV line-ground) with verified waveform fidelity and no recovery delay. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6476A | Axial-leaded TO-204AA (DO-4) package; identical electrical specs but different thermal path and mounting method | Requires through-hole PCB layout and wave soldering; unsuitable for high-density SMT assemblies | Select 1N6476A only when legacy board design mandates axial leads or chassis-mounting is preferred |
| JANTXV1N6476US | Same package and electrical specs, but screened to JANTXV level per MIL-PRF-19500/552 with full lot traceability and extended testing | Required for Class H/S spaceflight hardware and nuclear instrumentation where zero-defect screening is mandated | Choose JANTXV1N6476US when mission-critical reliability, radiation tolerance verification, or DoD procurement compliance is required |
Compared with 1N6476US/TR, the 1N6476A offers identical protection performance but demands mechanical redesign for through-hole integration, while JANTXV1N6476US adds rigorous screening without altering electrical behavior-making it optimal for flight-qualified systems where test evidence must accompany every component.
Availability
1N6476US/TR is available at Aetrix Electronics and suitable for aerospace power bus protection, avionics sensor interface, and downhole oilfield electronics requiring stable component supply, long-lifecycle support, and MIL-spec traceability.
Supply support for 1N6476US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) designs high-reliability analog and mixed-signal components for defense, aerospace, and industrial markets, with emphasis on radiation-hardened and MIL-spec qualified devices.
The 1N6476US/TR belongs to Microsemi's military-qualified TVS diode family engineered specifically for survivability in extreme thermal, radiation, and surge environments-targeting applications where single-point failure is unacceptable.
FAQ
What is the clamping voltage of the 1N6476US/TR under standard test conditions?
The 1N6476US/TR has a maximum clamping voltage (VC) of 78.5 V when subjected to a 10/1000 µs surge waveform at a peak pulse current (IPP) of 107 A. This value is measured per industry-standard test methodology and reflects the upper voltage limit imposed on protected circuits during transient events. The 1N6476US/TR maintains this clamping performance across its full operating temperature range.
Is the 1N6476US/TR suitable for high-temperature environments like downhole drilling tools?
Yes, the 1N6476US/TR is rated for continuous operation from –55 °C to +175 °C and features a hermetically sealed voidless glass package with Category I metallurgical bonds. Its thermal resistance (20.0 °C/W) and inherent radiation hardness per MicroNote 050 make it appropriate for downhole electronics where active cooling is impractical and ambient temperatures exceed 150 °C. The 1N6476US/TR requires no derating at 175 °C.
Does the 1N6476US/TR meet international ESD and surge immunity standards?
Yes, the 1N6476US/TR provides ESD protection per IEC61000-4-2 (Level 4, ±15 kV contact) and EFT protection per IEC61000-4-4. It also supports secondary lightning protection per select levels of IEC61000-4-5. These capabilities are validated through device-level testing and documented in Microsemi's official characterization reports for the 1N6469US–1N6476US series, including the 1N6476US/TR.
What is the difference between 1N6476US/TR and JANTXV1N6476US?
The JANTXV1N6476US shares identical electrical specifications and package dimensions with the 1N6476US/TR but undergoes additional screening per MIL-PRF-19500/552, including lot traceability, extended environmental testing, and radiation tolerance verification. The 1N6476US/TR is commercial/military-grade, while JANTXV1N6476US is flight-qualified. Both parts function identically in circuit, but only JANTXV1N6476US satisfies Class H/S space program requirements.
Can the 1N6476US/TR be used as a direct replacement for axial-leaded 1N6476 in existing designs?
No-the 1N6476US/TR uses a surface-mount MELF (Package G/D-5C) configuration, whereas the axial-leaded 1N6476 uses a DO-4 package. While their electrical parameters match, the 1N6476US/TR requires rework of PCB layout, stencil design, and assembly process. For drop-in compatibility, use 1N6476A instead, which retains the same axial form factor and electrical characteristics as the original 1N6476.
1N6476US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 51.6V
- Voltage - Breakdown (Min):
- 54V
- Voltage - Clamping (Max) @ Ipp:
- 78.5V
- Current - Peak Pulse (10/1000µs):
- 19A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D-5C
1N6476US/TR FAQ
1.How can I place an order for 1N6476US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6476US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6476US/TR reliable?
The price and inventory of 1N6476US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6476US/TR is usually 5 days.
3.What payment methods are accepted for 1N6476US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6476US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6476US/TR?
1N6476US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6476US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6476US/TR?
For technical support, including 1N6476US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6476US/TR requirements.
6.How does Aetrix verify that 1N6476US/TR is sourced from the original manufacturer or authorized distributors?
All 1N6476US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6476US/TR meets industry standards.
7.What is the process for return or replacement of 1N6476US/TR?
All 1N6476US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N6476US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6476US/TR part is unused and in its original packaging.
Return procedure for 1N6476US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N6476US/TR Tags
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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