My Inquiry
My Account
Microchip Technology 1N8150USE3/TR
- Part No.:
- 1N8150USE3/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8150USE3/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:8,092
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
1N8150USE3/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) diode designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 4 pF capacitance, and a 7.5 V working standoff voltage (VWM), making it suitable for ESD/EFT protection in aerospace data links and MIL-STD-750-compliant systems.
For engineers reviewing the 1N8150USE3/TR datasheet, 1N8150USE3/TR pinout, 1N8150USE3/TR application, or 1N8150USE3/TR equivalent, key selection criteria include low-capacitance transient clamping, Category 1 metallurgical bond reliability, RoHS-compliant e3 marking, and axial-leaded hard-glass package compatibility with through-hole PCB assembly.
Technical Context
This TVS uses a unique series-connected rectifier diode architecture to achieve ultra-low 4 pF capacitance while maintaining unidirectional clamping behavior. Its hermetically sealed hard-glass construction with tungsten slugs ensures robust thermal performance and radiation hardness per MicroNote 050.
The device operates across –55 °C to +175 °C junction temperature range and provides precise clamping at 13.5 V (VC) under 11.1 A IPP surge current. It meets IEC61000-4-2 (ESD), IEC61000-4-4 (EFT), and select IEC61000-4-5 (lightning) immunity standards without derating up to 25 °C ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 7.5 V - Maximum continuous reverse-biased operating voltage before leakage exceeds 10 µA |
| V(BR) min | 8.65 V - Minimum breakdown voltage at 1 mA test current, ensuring reliable turn-on margin |
| VC @ IPP | 13.5 V - Clamping voltage at 11.1 A peak impulse current, limiting downstream voltage stress |
| CT | 4 pF - Total terminal capacitance at 0 V, enabling >1 GHz signal integrity in RF/data lines |
| PPP | 150 W - Peak pulse power rating at 10/1000 µs waveform, supporting MIL-STD-1275B surge events |
| TJ Range | –55 to +175 °C - Full military-grade junction temperature range for space and avionics use |
| RθJA | 150 °C/W - Thermal resistance from junction to ambient, defining safe steady-state power dissipation limit |
Pinout & Package
Package: Axial-leaded hermetically sealed hard-glass case with cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg; dimensions per Microsemi T4-LDS-xxxx drawing (BD: 0.060–0.085", LL: 0.800–1.300").
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive terminal during forward conduction | Connected to protected circuit ground or low-side reference; enables unidirectional clamping |
| Cathode | Negative terminal; marked with band | Connected to protected signal line; conducts during transient overvoltage to clamp to VWM + VC |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic seal | Eliminates internal moisture and particle migration, ensuring long-term parameter stability in vacuum or high-humidity environments |
| Category 1 metallurgical bond | Internal tungsten-slug bonding certified for high-reliability applications including spaceflight and nuclear instrumentation |
| Triple-layer passivation | Enhanced surface insulation prevents leakage path formation under high humidity or contamination exposure |
| Low capacitance architecture | Series rectifier-diode configuration reduces CT to 4 pF-lowest among 150 W-rated TVS devices-preserving signal rise time |
Applications
| Aerospace Data Bus Protection | MIL-STD-1553 Transient Suppression |
|---|---|
Use Scenario: Protecting bidirectional Manchester-encoded data lines on satellite telemetry interfaces against ESD and lightning-induced surges. IC Role / Device Role / Timing Role: Unidirectional TVS placed between bus line and chassis ground to clamp positive transients while preserving signal edge fidelity. Use Value: 4 pF capacitance avoids signal distortion at 1 Mbps data rate; 13.5 V clamping prevents receiver input damage during ±15 kV contact discharge. | Use Scenario: Safeguarding MIL-STD-1553B remote terminal (RT) receivers from induced transients on twin-axial data buses. IC Role / Device Role / Timing Role: Standoff-rated TVS mounted at RT connector entry point to absorb 10/1000 µs surges without affecting 1 µs bit timing. Use Value: 7.5 V VWM matches bus common-mode range; 150 W PPP withstands multiple 500 V/m EMP pulses per MIL-STD-461G RS103. |
| Avionics Sensor Interface Protection | Nuclear Instrumentation Signal Conditioning |
Use Scenario: Shielding analog sensor outputs (e.g., pressure, temperature) in flight control computers from engine ignition noise. IC Role / Device Role / Timing Role: Low-leakage TVS on sensor output line to shunt fast-rising transients (<1 ns) while adding negligible offset error. Use Value: 10 µA max ID at VWM ensures <1 µV error in 100 kΩ sensor load; hermetic seal prevents parametric drift in 10,000-hour MTBF deployments. | Use Scenario: Protecting gamma-ray detector preamplifier inputs in reactor monitoring systems exposed to neutron flux. IC Role / Device Role / Timing Role: Radiation-hardened TVS suppressing ESD events on front-end signal paths without degrading SNR. Use Value: Inherent radiation hardness per MicroNote 050 eliminates need for shielding; 175 °C TJ rating supports operation near hot-core electronics. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N8150US | Same electrical specs but non-RoHS (tin/lead plating); no e3 marking | Approved for legacy military hardware requiring Pb-based solder compatibility | Select when RoHS exemption applies and lead-free assembly is not required |
| SMCJ7.5A | Surface-mount SMC package; 100 W PPP; 15 pF CT; 10.5 V VC @ 12.1 A | Higher capacitance limits use to sub-100 MHz signals; lower power rating reduces surge margin | Choose only if board space constraints prohibit axial-leaded components and 150 W rating is not critical |
Compared with 1N8150USE3/TR, the 1N8150US offers identical performance with legacy plating, while SMCJ7.5A trades hermetic reliability and ultra-low capacitance for compactness-making the 1N8150USE3/TR optimal for high-frequency, high-reliability signal protection where layout allows axial mounting.
Availability
1N8150USE3/TR is available at Aetrix Electronics and suitable for aerospace data bus protection, MIL-STD-1553 transient suppression, and avionics sensor interface protection requiring stable component supply across extended production lifecycles.
Supply support for 1N8150USE3/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and defense-grade analog and mixed-signal components.
The 1N8150USE3/TR belongs to Microsemi's legacy "T4-LDS" TVS family, engineered specifically for mission-critical transient suppression in aerospace, defense, and nuclear instrumentation where failure is not an option.
FAQ
What is the clamping voltage of the 1N8150USE3/TR under maximum rated surge current?
The 1N8150USE3/TR has a maximum clamping voltage (VC) of 13.5 V at 11.1 A peak impulse current (IPP) under the standard 10/1000 µs waveform. This value is guaranteed across the full operating temperature range and defines the upper voltage limit imposed on protected circuits during transient events. The 1N8150USE3/TR achieves this with minimal voltage overshoot due to its low-inductance hard-glass package and internal metallurgical bond structure.
Is the 1N8150USE3/TR suitable for bidirectional transient protection?
No-the 1N8150USE3/TR is a unidirectional TVS diode. For bidirectional protection, two 1N8150USE3/TR devices must be connected in anti-parallel configuration, as documented in Microsemi's Figure 5. This arrangement doubles total capacitance to 8 pF but preserves the 150 W rating per polarity. The 1N8150USE3/TR itself only clamps positive transients applied to its cathode relative to anode.
Does the 1N8150USE3/TR meet IEC61000-4-2 and IEC61000-4-4 immunity requirements?
Yes-the 1N8150USE3/TR is explicitly rated for ESD protection per IEC61000-4-2 and EFT protection per IEC61000-4-4, as confirmed in the Applications/Benefits section of the Microsemi T4-LDS-xxxx datasheet. Its 4 pF capacitance and fast response enable effective suppression of 8 kV contact and 15 kV air discharges without signal degradation, and its 150 W PPP rating handles repetitive 4 kV burst waveforms.
What does the "e3" suffix in 1N8150USE3/TR signify?
Per Microsemi's nomenclature guide, the "e3" suffix in 1N8150USE3/TR indicates RoHS-compliant matte tin plating on the axial leads. This replaces traditional tin/lead plating while maintaining solderability and corrosion resistance. The "TR" denotes tape-and-reel packaging per EIA-296 standard, and the absence of MQ/MX/MV/MS prefix confirms commercial reliability level-not JAN/JANTX-grade.
How does the 1N8150USE3/TR achieve its 4 pF capacitance?
The 1N8150USE3/TR achieves 4 pF capacitance via a proprietary internal architecture that places a rectifier diode in series and opposite polarity to the main TVS junction. This configuration cancels parasitic capacitance contributions while retaining unidirectional clamping functionality. Unlike conventional planar TVS structures, this dual-junction design is exclusive to Microsemi's T4-LDS series and is validated by measurement at zero volts per the datasheet.
1N8150USE3/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 7.5V
- Voltage - Breakdown (Min):
- 8.65V
- Voltage - Clamping (Max) @ Ipp:
- 13.5V
- Current - Peak Pulse (10/1000µs):
- 11.1A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8150USE3/TR FAQ
1.How can I place an order for 1N8150USE3/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8150USE3/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8150USE3/TR reliable?
The price and inventory of 1N8150USE3/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8150USE3/TR is usually 5 days.
3.What payment methods are accepted for 1N8150USE3/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8150USE3/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N8150USE3/TR?
1N8150USE3/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8150USE3/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8150USE3/TR?
For technical support, including 1N8150USE3/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8150USE3/TR requirements.
6.How does Aetrix verify that 1N8150USE3/TR is sourced from the original manufacturer or authorized distributors?
All 1N8150USE3/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8150USE3/TR meets industry standards.
7.What is the process for return or replacement of 1N8150USE3/TR?
All 1N8150USE3/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8150USE3/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8150USE3/TR part is unused and in its original packaging.
Return procedure for 1N8150USE3/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8150USE3/TR Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
