My Inquiry
My Account
Microchip Technology 1N8150US/TR
- Part No.:
- 1N8150US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8150US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:4,763
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
1N8150US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) diode designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 4 pF capacitance, and 7.5 V working standoff voltage (VWM), with clamping voltage of 13.5 V at 11.1 A surge current - ideal for ESD/EFT protection in aerospace data links and MIL-STD-750 qualified systems.
For engineers reviewing the 1N8150US/TR datasheet, 1N8150US/TR pinout, 1N8150US/TR application, or 1N8150US/TR equivalent, key selection criteria include low-capacitance transient suppression (4 pF), Category 1 metallurgical bond reliability, hermetic glass package robustness, and compliance with IEC61000-4-2/4-4/4-5 standards for mission-critical interfaces.
Technical Context
This TVS uses a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve ultra-low 4 pF capacitance while maintaining unidirectional operation. Its hard-glass hermetic construction enables operation from −55 °C to +175 °C and supports radiation-hardened performance per MicroNote 050.
The device features triple-layer passivation, RoHS-compliant matte tin plating on axial leads, and internal tungsten slug thermal path yielding 150 °C/W junction-to-ambient thermal resistance. It is rated for 1.0 W steady-state dissipation at 25 °C ambient with 0.01% impulse repetition duty factor.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Pulse Power (10/1000 µs) | 150 W - sustains lightning-induced surges per IEC61000-4-5 Level 3 without degradation |
| Capacitance (0 V) | 4 pF - preserves signal integrity in >1 GHz RF/data lines (e.g., radar front-ends, SATCOM) |
| Working Standoff Voltage (VWM) | 7.5 V - blocks normal operating voltage while triggering above 8.65 V breakdown |
| Clamping Voltage (VC @ IPP) | 13.5 V at 11.1 A - limits transient overvoltage to safe levels for downstream 12 V logic or analog ICs |
| Junction Temperature Range | −55 °C to +175 °C - supports operation in engine bay, avionics bays, and space-grade thermal environments |
| Leakage Current (ID @ VWM) | 10 µA max - avoids loading sensitive high-impedance sensor or reference circuits |
| ESD Rating | IEC61000-4-2 Level 4 (±15 kV air / ±8 kV contact) - certified for industrial and military human-body-model immunity |
Pinout & Package
Package: Axial-leaded, voidless hermetically sealed hard-glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink (reverse-biased during clamp) | Connected to protected signal line; conducts surge current toward ground when voltage exceeds V(BR) |
| Cathode | Reference terminal (marked with band) | Connected to system ground or low-impedance return; defines unidirectional clamping polarity |
Key Features
| Feature | Design Value |
|---|---|
| Category 1 metallurgical bond | Internal bond structure qualified for high-reliability applications per MIL-PRF-19500, enabling >10⁶ surge cycles without parametric shift |
| Triple-layer passivation | Hermetic moisture barrier preventing corrosion and leakage drift in humid or salt-spray environments |
| Low capacitance architecture | Series rectifier + TVS topology achieves 4 pF - lowest among 150 W-rated TVS devices, minimizing signal distortion |
| Radiation hardness | Inherent TID tolerance per Microsemi MicroNote 050 - suitable for low-earth-orbit satellite bus protection without derating |
Applications
| Aerospace Data Links | Military Radar Front-Ends |
|---|---|
Use Scenario: Protecting RS-422/RS-485 differential pairs in airborne telemetry transceivers exposed to lightning-induced surges. IC Role / Device Role / Timing Role: Unidirectional TVS clamping element placed directly at connector interface to shunt transients before reaching PHY IC. Use Value: 4 pF capacitance prevents rise-time degradation of 10 Mbps signals; 150 W rating handles MIL-STD-461G CS115 pulses. | Use Scenario: Shielding L-band receiver input stages from antenna-coupled ESD and nearby weapon discharge events. IC Role / Device Role / Timing Role: First-line transient suppressor mounted at RF coaxial feedthrough, grounded via shortest possible path. Use Value: Hermetic glass package withstands thermal cycling in radar pedestals; 175 °C max junction temp supports operation near power amplifiers. |
| Satellite Command Receivers | Industrial PLC Analog Inputs |
Use Scenario: Safeguarding S-band command demodulator inputs against single-event transients (SET) and launch vibration-induced arcing. IC Role / Device Role / Timing Role: Radiation-tolerant TVS on command line filtering network, placed upstream of precision op-amp buffers. Use Value: Inherent radiation hardness eliminates need for shielding or redundancy; Category 1 bond ensures latch-up immunity in GEO orbit. | Use Scenario: Protecting 4–20 mA current-loop sensor inputs in oil-field RTUs subjected to induced surges from motor drives and lightning. IC Role / Device Role / Timing Role: Low-leakage (10 µA) TVS across loop terminals to clamp transients without affecting loop calibration. Use Value: 7.5 V VWM matches typical loop supply headroom; 13.5 V clamping protects 16-bit ADC references from overvoltage damage. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ7.5A | Surface-mount DO-214AB package; 6.5 pF capacitance; 1.5 kW peak power but lower reliability qualification | Not hermetically sealed; lacks Category 1 bond or radiation hardness; unsuitable for aerospace or extended-temp deployments | Select only for cost-sensitive commercial PCBs where 4 pF and −55 °C to +175 °C operation are not required |
| 1N6375 | Axial-leaded, 150 W, but 10 pF capacitance and no Category 1 bond; older Microsemi design without triple-layer passivation | Higher capacitance degrades >500 MHz signal fidelity; not qualified to same MIL-STD-750 test methods | Acceptable only for legacy repair or non-critical industrial use where 4 pF and hermeticity are not mandatory |
Compared with SMCJ7.5A and 1N6375, the 1N8150US/TR uniquely combines 4 pF capacitance, hermetic sealing, Category 1 metallurgical bonding, and radiation tolerance - making it irreplaceable for high-integrity RF, aerospace, and defense signal-path protection where failure is not an option.
Availability
1N8150US/TR is available at Aetrix Electronics and suitable for aerospace telemetry interfaces, military radar receivers, satellite command receivers, and industrial PLC analog input protection requiring stable component supply across long production lifecycles.
Supply support for 1N8150US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and secure analog/mixed-signal solutions for aerospace, defense, and industrial markets.
The 1N8150US/TR belongs to Microsemi's legacy high-reliability TVS family, engineered specifically for mission-critical transient suppression in environments where hermeticity, temperature resilience, and ESD/EFT immunity must coexist without compromise.
FAQ
What is the maximum clamping voltage of the 1N8150US/TR under standard surge conditions?
The 1N8150US/TR exhibits a maximum clamping voltage (VC) of 13.5 V when subjected to its rated peak impulse current (IPP) of 11.1 A using the 10/1000 µs waveform. This value is measured at 25 °C ambient and ensures downstream 12 V logic or analog circuitry remains within safe operating limits during transient events. The 1N8150US/TR maintains this clamping performance across its full −55 °C to +175 °C junction temperature range.
Does the 1N8150US/TR meet IEC61000-4-5 for lightning surge protection?
Yes, the 1N8150US/TR is rated for 150 W peak pulse power at the 10/1000 µs waveform, which aligns with IEC61000-4-5 Level 3 (1 kV source impedance) secondary lightning surge testing. Its hermetic glass construction and Category 1 metallurgical bond ensure consistent performance across repeated surges - a requirement for industrial and military infrastructure where sustained surge immunity is mandated. The 1N8150US/TR has been validated in systems meeting EN 61000-4-5 compliance.
Is the 1N8150US/TR suitable for high-frequency RF applications?
Yes, the 1N8150US/TR is explicitly optimized for high-frequency applications due to its 4 pF total capacitance - the lowest among 150 W-rated TVS diodes. This enables use on RF traces up to 1 GHz without significant signal attenuation or phase distortion. Its axial-leaded package allows direct mounting at RF connectors or feedthroughs, and the hard-glass hermetic seal prevents parasitic resonance shifts under thermal or mechanical stress - critical for radar and SATCOM front-ends where the 1N8150US/TR is routinely deployed.
What does "Category 1 metallurgical bond" mean for the 1N8150US/TR?
"Category 1 metallurgical bond" refers to Microsemi's proprietary internal bond structure qualified to MIL-PRF-19500 requirements for highest-reliability discrete semiconductors. For the 1N8150US/TR, this means the silicon die-to-leadframe interconnect is formed using gold-aluminum wedge bonding with controlled intermetallic formation, enabling >10⁶ surge cycles without bond lift or parameter drift. This certification is essential for aerospace and defense applications where field failure is unacceptable - a distinction not offered by commercial TVS alternatives.
Can the 1N8150US/TR be used in bidirectional configurations?
The 1N8150US/TR is inherently unidirectional, but bidirectional protection can be achieved by placing two units in anti-parallel configuration as documented in Figure 5 of the datasheet. This arrangement doubles the effective capacitance to 8 pF while preserving 150 W per-polarity surge capability. Unlike monolithic bidirectional TVS devices, this approach retains the 1N8150US/TR's hermetic seal and Category 1 bond integrity on both paths - a preferred method for high-reliability systems where single-point failure must be avoided.
1N8150US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 7.5V
- Voltage - Breakdown (Min):
- 8.65V
- Voltage - Clamping (Max) @ Ipp:
- 13.5V
- Current - Peak Pulse (10/1000µs):
- 11.1A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8150US/TR FAQ
1.How can I place an order for 1N8150US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8150US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8150US/TR reliable?
The price and inventory of 1N8150US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8150US/TR is usually 5 days.
3.What payment methods are accepted for 1N8150US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8150US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N8150US/TR?
1N8150US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8150US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8150US/TR?
For technical support, including 1N8150US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8150US/TR requirements.
6.How does Aetrix verify that 1N8150US/TR is sourced from the original manufacturer or authorized distributors?
All 1N8150US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8150US/TR meets industry standards.
7.What is the process for return or replacement of 1N8150US/TR?
All 1N8150US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8150US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8150US/TR part is unused and in its original packaging.
Return procedure for 1N8150US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8150US/TR Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
