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Microchip Technology 1N8151USE3/TR
- Part No.:
- 1N8151USE3/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8151USE3/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:7,372
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Product details
Overview
1N8151USE3/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 4 pF capacitance, and 8.5 V working standoff voltage (VWM), with clamping voltage of 14.5 V at 11.7 A surge current - ideal for ESD/EFT protection in aerospace data links.
For engineers reviewing the 1N8151USE3/TR datasheet, 1N8151USE3/TR pinout, 1N8151USE3/TR application, or 1N8151USE3/TR equivalent, key selection criteria include low-capacitance transient suppression, Category 1 metallurgical bond reliability, hermetic glass packaging, and compliance with IEC61000-4-2/4-4/4-5 standards for mission-critical interfaces.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration to achieve ultra-low 4 pF total capacitance while maintaining unidirectional operation. Its hard-glass hermetic construction with internal tungsten slugs and Category 1 metallurgical bonds ensures radiation hardness and thermal stability across –55 °C to +175 °C junction temperature range.
The device operates with 8.5 V working standoff voltage (VWM), 9.5 V minimum breakdown voltage (V(BR)) at 1 mA, and clamps to ≤14.5 V at 11.7 A peak impulse current (IPP), enabling robust secondary lightning protection in RF front-ends and avionics serial buses.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 8.5 V - maximum continuous reverse-biased operating voltage before conduction begins |
| V(BR) min | 9.5 V at 1 mA - guaranteed breakdown threshold for reliable overvoltage triggering |
| VC @ IPP | 14.5 V at 11.7 A - clamping voltage during 10/1000 µs surge, limiting downstream stress |
| CT | 4 pF - enables use on >1 GHz signal paths without impedance disruption |
| PPP | 150 W - peak pulse power rating per IEC61000-4-5 waveform, supporting Level 3–4 lightning immunity |
| TJ Range | –55 °C to +175 °C - supports operation in extended-temperature avionics and downhole electronics |
| RθJA | 150 °C/W - thermal resistance informs PCB copper area requirements for steady-state power dissipation |
Pinout & Package
Package: Axial-leaded hermetically sealed hard-glass case with cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive terminal under forward bias | Connected to protected signal line; conducts only during reverse-transient clamping |
| Cathode | Negative terminal; marked with band | Connected to ground reference; defines unidirectional clamping polarity |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and long-term parameter drift in humid or vacuum environments |
| Category 1 metallurgical bond | Meets MIL-STD-883 requirements for high-reliability applications including space-grade systems |
| 4 pF capacitance | Preserves signal integrity on high-speed lines (e.g., RS-422, ARINC 429, MIL-STD-1553) |
| Triple-layer passivation | Enhances surface insulation and prevents leakage path formation under high humidity or contamination |
| IEC61000-4-2/4-4/4-5 compliance | Validated for ESD (±15 kV air), EFT (40 A), and lightning surge (10/1000 µs, 150 W) immunity testing |
Applications
| Aerospace Data Bus Protection | High-Frequency RF Front-End |
|---|---|
Use Scenario: Protecting ARINC 429 or MIL-STD-1553B receivers from induced transients on aircraft wiring harnesses. IC Role / Device Role / Timing Role: Unidirectional TVS placed between differential receiver input and chassis ground. Use Value: 4 pF capacitance avoids signal rise-time degradation; 14.5 V clamping prevents receiver IC latch-up during lightning-induced surges. | Use Scenario: Shielding LNA inputs in S-band radar receivers from ESD events during maintenance or handling. IC Role / Device Role / Timing Role: Low-capacitance shunt clamp on RF signal path prior to first-stage amplification. Use Value: Sub-5 pF capacitance maintains impedance match and noise figure; hermetic seal prevents parametric shift in humid hangar environments. |
| Downhole Telemetry Interface | Industrial Ethernet PHY Protection |
Use Scenario: Safeguarding RS-485 transceivers in oil/gas wellhead controllers exposed to electrostatic discharge and switching transients. IC Role / Device Role / Timing Role: TVS mounted directly at connector entry point, anode to signal, cathode to isolated ground. Use Value: –55 °C to +175 °C operating range survives deep-well thermal cycling; 150 W PPP handles motor drive coupling transients. | Use Scenario: Protecting 100BASE-TX PHY pins in ruggedized factory automation switches against EFT bursts on unshielded cabling. IC Role / Device Role / Timing Role: Unidirectional clamp on each differential pair, referenced to system ground plane. Use Value: 8.5 V VWM aligns with 3.3 V PHY rail; 4 pF minimizes jitter impact on 125 MHz symbol rate signals. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ8.5A | Surface-mount DO-214AB package; 6.5 pF capacitance; 1500 W peak power rating | Higher capacitance limits use above ~500 MHz; higher power suits industrial mains-side protection | Select when board space is constrained and RF bandwidth < 500 MHz; avoid for aerospace RF front-ends |
| 1N8151US | Same die and specs but non-RoHS (tin/lead plating); identical axial-glass package and electrical performance | No functional difference; used where legacy solder compatibility or MIL-PRF-19500 compliance required | Select only if RoHS exemption applies; otherwise 1N8151USE3/TR preferred for new designs |
Compared with SMCJ8.5A and 1N8151US, the 1N8151USE3/TR uniquely combines hermetic reliability, 4 pF capacitance, and RoHS compliance - making it optimal for high-frequency, high-reliability applications where long-term parameter stability and radiation tolerance are mandatory.
Availability
1N8151USE3/TR is available at Aetrix Electronics and suitable for aerospace data bus protection, downhole telemetry interfaces, and high-frequency RF front-end protection requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for 1N8151USE3/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for aerospace, defense, and industrial markets.
The 1N8151USE3/TR belongs to Microsemi's legacy TVS family engineered specifically for mission-critical transient suppression where hermetic sealing, radiation hardness, and sub-5 pF capacitance are non-negotiable design requirements.
FAQ
What is the clamping voltage of the 1N8151USE3/TR at its rated surge current?
The 1N8151USE3/TR clamps to a maximum of 14.5 V at 11.7 A peak impulse current (IPP), measured under the standard 10/1000 µs waveform. This clamping voltage ensures protected circuitry remains below absolute maximum ratings during transient events. The 1N8151USE3/TR achieves this performance while maintaining only 4 pF capacitance - critical for preserving signal fidelity in high-speed applications.
Is the 1N8151USE3/TR suitable for bidirectional transient protection?
No - the 1N8151USE3/TR is strictly unidirectional. For bidirectional protection, two 1N8151USE3/TR devices must be connected in anti-parallel configuration, as documented in Microsemi's Figure 5. This arrangement doubles total capacitance to 8 pF but retains the same clamping performance and reliability attributes of the 1N8151USE3/TR.
Does the 1N8151USE3/TR meet IEC61000-4-5 Level 4 lightning surge requirements?
Yes - the 1N8151USE3/TR is rated for 150 W peak pulse power at the 10/1000 µs waveform defined in IEC61000-4-5, which corresponds to Level 4 (4 kV line-to-ground, 2 kV line-to-line) for many system-level implementations. Its hermetic construction and Category 1 metallurgical bonds ensure consistent performance across repeated surges, as validated in Microsemi's test reports for the 1N8149–1N8182 series.
What is the thermal resistance junction-to-ambient (RθJA) for the 1N8151USE3/TR?
The 1N8151USE3/TR has a thermal resistance of 150 °C/W junction-to-ambient under standard PCB mounting conditions. This value assumes adequate copper pour and thermal relief design; derating is required above +25 °C ambient per the published derating curve. The 1N8151USE3/TR's RθJA directly impacts maximum allowable average power dissipation in continuous-duty applications.
How does the 1N8151USE3/TR achieve its 4 pF capacitance?
The 1N8151USE3/TR achieves 4 pF total capacitance via an integrated series-connected rectifier diode placed opposite the TVS junction - a proprietary architecture that cancels parasitic capacitance while preserving unidirectional clamping behavior. This design is exclusive to Microsemi's 1N8149–1N8182 series and is confirmed in the schematic diagram (Figure 4) of the official datasheet for the 1N8151USE3/TR.
1N8151USE3/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 8.5V
- Voltage - Breakdown (Min):
- 9.5V
- Voltage - Clamping (Max) @ Ipp:
- 14.5V
- Current - Peak Pulse (10/1000µs):
- 10.3A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8151USE3/TR FAQ
1.How can I place an order for 1N8151USE3/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8151USE3/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8151USE3/TR reliable?
The price and inventory of 1N8151USE3/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8151USE3/TR is usually 5 days.
3.What payment methods are accepted for 1N8151USE3/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8151USE3/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N8151USE3/TR?
1N8151USE3/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8151USE3/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8151USE3/TR?
For technical support, including 1N8151USE3/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8151USE3/TR requirements.
6.How does Aetrix verify that 1N8151USE3/TR is sourced from the original manufacturer or authorized distributors?
All 1N8151USE3/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8151USE3/TR meets industry standards.
7.What is the process for return or replacement of 1N8151USE3/TR?
All 1N8151USE3/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8151USE3/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8151USE3/TR part is unused and in its original packaging.
Return procedure for 1N8151USE3/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8151USE3/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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onsemi
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Diodes Incorporated
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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