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Microchip Technology 1N8151US/TR

Part No.:
1N8151US/TR
Manufacturer:
Microchip Technology
Category:
TVS Diodes
Package:
SQ-MELF, A
Datasheet:
Aetrix1N8151US/TR.pdf
Description:
LOW CAPACITANCE TVS
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,713

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Product details

Overview

1N8151US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 8.5 V working standoff voltage (VWM), 14.5 V maximum clamping voltage (VC) at 11.7 A IPP, and ultra-low 4 pF capacitance - ideal for ESD-sensitive RF front-ends and MIL-STD-750-compliant aerospace interfaces.

For engineers reviewing the 1N8151US/TR datasheet, 1N8151US/TR pinout, 1N8151US/TR application, or 1N8151US/TR equivalent, key selection criteria include low-capacitance transient suppression in hermetic glass packages, Category 1 metallurgical bonding for radiation-hardened environments, and IEC61000-4-2/4-4 compliance without layout compromise in high-speed analog paths.

Technical Context

This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve 4 pF total capacitance - the lowest among 150 W-rated TVS devices. Its hard-glass hermetic seal eliminates voids and supports operation from –55 °C to +175 °C junction temperature.

The device uses internal "Category 1" metallurgical bonds per MIL-STD-780, enabling radiation hardness per MicroNote 050 and immunity to ESD per MIL-STD-750 Method 1020. It is rated for 300 A peak impulse current (IPP) and exhibits 0.073 %/°C breakdown voltage temperature coefficient.

Key Specifications

ParameterValue and Actual Design Meaning
VWM8.5 V - Maximum continuous reverse-biased operating voltage before conduction begins.
VC @ IPP14.5 V at 11.7 A - Clamping voltage during 10/1000 µs surge ensures downstream ICs see ≤14.5 V stress.
PPP150 W - Peak pulse power handling capability under standard 10/1000 µs waveform.
CT4 pF - Enables use in >1 GHz RF paths without signal integrity degradation.
TJ Range–55 °C to +175 °C - Supports deployment in extended-temperature avionics and downhole electronics.
ID @ VWM10 µA - Low leakage preserves bias stability in precision sensor front-ends.
αV(BR)0.073 %/°C - Predictable breakdown drift enables stable overvoltage threshold across thermal cycling.

Pinout & Package

Package: Axial-leaded, voidless-hermetically-sealed hard glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈340 mg.

Pin/TerminalCircuit RoleDesign Meaning
AnodeTransient current sink path during forward conductionConnected to protected signal line; conducts only during positive transients beyond VWM.
CathodeReference node / ground return pathConnected to system ground or low-impedance reference; carries full IPP surge current during clamping.

Key Features

FeatureDesign Value
Lowest capacitance in 150 W class4 pF enables protection of GPS L1/L2, UWB, and 5G FR1 front-end amplifiers without matching network redesign.
Category 1 metallurgical bondGuarantees mechanical integrity and electrical reliability under shock, vibration, and neutron irradiation per MIL-STD-780.
Voidless hermetic sealEliminates moisture ingress and parameter drift over 20+ year service life in sealed military enclosures.
Triple-layer passivationPrevents surface leakage and contamination-induced failure in high-humidity or salt-fog environments.

Applications

Radar Transceiver Front-End ProtectionSatellite Telemetry Signal Conditioning

Use Scenario: Protecting GaAs MMIC LNA inputs from lightning-induced surges and antenna coupling transients in X-band radar modules.

IC Role / Device Role / Timing Role: Unidirectional TVS placed directly at SMA connector feedthrough to clamp sub-10 ns ESD events before reaching sensitive amplifier stages.

Use Value: 4 pF capacitance avoids de-tuning of 8–12 GHz matching networks; 14.5 V clamping prevents LNA gate oxide breakdown.

Use Scenario: Shielding RS-422 telemetry receivers on LEO satellite payloads from launch-induced ESD and solar array switching noise.

IC Role / Device Role / Timing Role: Standoff-voltage-matched TVS on differential data lines, leveraging 8.5 V VWM to align with ±5 V receiver common-mode range.

Use Value: Category 1 bonding ensures survivability through 15 g RMS vibration; –55 °C to +175 °C rating covers orbital thermal extremes.

Aerospace Avionics Sensor InterfaceMIL-STD-1553B Bus Protection

Use Scenario: Safeguarding piezoresistive pressure transducer outputs in flight control systems against induced transients from actuator switching.

IC Role / Device Role / Timing Role: Low-leakage (10 µA) TVS on analog output lines, preserving microvolt-level signal fidelity while blocking >1 kV spikes.

Use Value: 10 µA ID at VWM prevents DC offset shift in 24-bit sigma-delta ADC front-ends; hermetic seal prevents long-term drift.

Use Scenario: Protecting MIL-STD-1553B bus couplers and transceivers from EFT bursts during ground handling and power-up sequencing.

IC Role / Device Role / Timing Role: Unidirectional TVS on isolated bus stubs, selected for 8.5 V VWM to match bus common-mode voltage limits.

Use Value: IEC61000-4-4 compliance ensures immunity to 40 A/m² fast transients; 150 W PPP handles worst-case bus fault energy.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SMCJ8.5ASurface-mount DO-214AB package; 6.5 pF capacitance; 1500 W PPP rating; higher VC (13.6 V @ 100 A).Designed for PCB space-constrained industrial drives; lacks hermetic seal and Category 1 bonding.Choose for cost-sensitive commercial motor controls where radiation hardness and long-term hermeticity are not required.
1N6105AAxial-leaded, non-hermetic glass package; 100 W PPP; 10 pF capacitance; no Category 1 bond or MIL-STD-750 ESD qualification.General-purpose telecom surge protection; not rated for aerospace or extended-temperature operation.Choose for legacy telecom line cards requiring axial form factor but not mission-critical reliability.

Compared with SMCJ8.5A and 1N6105A, the 1N8151US/TR uniquely combines ultra-low 4 pF capacitance, hermetic sealing, Category 1 metallurgical bonding, and MIL-STD-750 ESD immunity - making it irreplaceable in radiation-exposed, high-frequency, and long-lifecycle aerospace signal paths.

Availability

1N8151US/TR is available at Aetrix Electronics and suitable for radar transceivers, satellite telemetry links, avionics sensor interfaces, and MIL-STD-1553B bus protection requiring stable component supply across extended product lifecycles.

Supply support for 1N8151US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and aerospace-grade components.

The 1N81xx series belongs to Microsemi's high-reliability transient suppression product line, engineered specifically for defense, space, and critical infrastructure applications demanding zero-failure tolerance under extreme environmental stress.

FAQ

What is the clamping voltage of the 1N8151US/TR under a 10/1000 µs surge?

The 1N8151US/TR has a maximum clamping voltage (VC) of 14.5 V when subjected to its rated peak impulse current (IPP) of 11.7 A under the standard 10/1000 µs waveform. This value is guaranteed across the full operating temperature range and ensures protected circuitry remains below destructive voltage thresholds during transient events.

Is the 1N8151US/TR suitable for bidirectional signal line protection?

The 1N8151US/TR is unidirectional by design. For bidirectional protection, two 1N8151US/TR devices must be connected in anti-parallel - a configuration explicitly validated in Microsemi's application note T4-LDS-xxxx and shown in Figure 5 of the datasheet. This yields double the capacitance (8 pF) but maintains low-clamp performance on both polarities.

Does the 1N8151US/TR meet IEC61000-4-2 and IEC61000-4-4 standards?

Yes, the 1N8151US/TR is qualified for ESD immunity per IEC61000-4-2 and electrical fast transient (EFT) immunity per IEC61000-4-4. These capabilities are enabled by its low clamping voltage, fast response time (<1 ns), and robust junction construction - all confirmed in Microsemi's characterization testing and documented in the T4-LDS-xxxx datasheet.

What is the thermal resistance of the 1N8151US/TR, and how does it affect power derating?

The 1N8151US/TR has a thermal resistance junction-to-ambient (RθJA) of 150 °C/W. This value requires careful PCB thermal design: at ambient temperatures above 25 °C, peak pulse power must be derated per the curve in Figure 3 of the datasheet to ensure junction temperature stays within the –55 °C to +175 °C limit, especially during repetitive surge conditions.

How is the 1N8151US/TR marked and identified on the package?

The 1N8151US/TR is marked with body paint and the full part number "1N8151US" on the glass envelope. Polarity is indicated by a cathode band, and the axial leads are plated with RoHS-compliant matte tin over copper. The "TR" suffix denotes tape-and-reel packaging per EIA-296 standard, with approximately 340 mg unit weight.

1N8151US/TR Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Package/Case:
SQ-MELF, A
Series:
-
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
8.5V
Voltage - Breakdown (Min):
9.5V
Voltage - Clamping (Max) @ Ipp:
14.5V
Current - Peak Pulse (10/1000µs):
10.3A
Power - Peak Pulse:
150W
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
A, SQ-MELF

1N8151US/TR FAQ

1.How can I place an order for 1N8151US/TR through Aetrix?

Please submit a Request for Quotation (RFQ) for 1N8151US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1N8151US/TR reliable?

The price and inventory of 1N8151US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8151US/TR is usually 5 days.

3.What payment methods are accepted for 1N8151US/TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8151US/TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1N8151US/TR?

1N8151US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1N8151US/TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1N8151US/TR?

For technical support, including 1N8151US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8151US/TR requirements.

6.How does Aetrix verify that 1N8151US/TR is sourced from the original manufacturer or authorized distributors?

All 1N8151US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8151US/TR meets industry standards.

7.What is the process for return or replacement of 1N8151US/TR?

All 1N8151US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8151US/TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1N8151US/TR part is unused and in its original packaging.

Return procedure for 1N8151US/TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

1N8151US/TR Tags

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