Microchip Technology 1N8151US/TR
- Part No.:
- 1N8151US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8151US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:

- Shipping:

Inventory:6,713
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
1N8151US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 8.5 V working standoff voltage (VWM), 14.5 V maximum clamping voltage (VC) at 11.7 A IPP, and ultra-low 4 pF capacitance - ideal for ESD-sensitive RF front-ends and MIL-STD-750-compliant aerospace interfaces.
For engineers reviewing the 1N8151US/TR datasheet, 1N8151US/TR pinout, 1N8151US/TR application, or 1N8151US/TR equivalent, key selection criteria include low-capacitance transient suppression in hermetic glass packages, Category 1 metallurgical bonding for radiation-hardened environments, and IEC61000-4-2/4-4 compliance without layout compromise in high-speed analog paths.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve 4 pF total capacitance - the lowest among 150 W-rated TVS devices. Its hard-glass hermetic seal eliminates voids and supports operation from –55 °C to +175 °C junction temperature.
The device uses internal "Category 1" metallurgical bonds per MIL-STD-780, enabling radiation hardness per MicroNote 050 and immunity to ESD per MIL-STD-750 Method 1020. It is rated for 300 A peak impulse current (IPP) and exhibits 0.073 %/°C breakdown voltage temperature coefficient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 8.5 V - Maximum continuous reverse-biased operating voltage before conduction begins. |
| VC @ IPP | 14.5 V at 11.7 A - Clamping voltage during 10/1000 µs surge ensures downstream ICs see ≤14.5 V stress. |
| PPP | 150 W - Peak pulse power handling capability under standard 10/1000 µs waveform. |
| CT | 4 pF - Enables use in >1 GHz RF paths without signal integrity degradation. |
| TJ Range | –55 °C to +175 °C - Supports deployment in extended-temperature avionics and downhole electronics. |
| ID @ VWM | 10 µA - Low leakage preserves bias stability in precision sensor front-ends. |
| αV(BR) | 0.073 %/°C - Predictable breakdown drift enables stable overvoltage threshold across thermal cycling. |
Pinout & Package
Package: Axial-leaded, voidless-hermetically-sealed hard glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink path during forward conduction | Connected to protected signal line; conducts only during positive transients beyond VWM. |
| Cathode | Reference node / ground return path | Connected to system ground or low-impedance reference; carries full IPP surge current during clamping. |
Key Features
| Feature | Design Value |
|---|---|
| Lowest capacitance in 150 W class | 4 pF enables protection of GPS L1/L2, UWB, and 5G FR1 front-end amplifiers without matching network redesign. |
| Category 1 metallurgical bond | Guarantees mechanical integrity and electrical reliability under shock, vibration, and neutron irradiation per MIL-STD-780. |
| Voidless hermetic seal | Eliminates moisture ingress and parameter drift over 20+ year service life in sealed military enclosures. |
| Triple-layer passivation | Prevents surface leakage and contamination-induced failure in high-humidity or salt-fog environments. |
Applications
| Radar Transceiver Front-End Protection | Satellite Telemetry Signal Conditioning |
|---|---|
Use Scenario: Protecting GaAs MMIC LNA inputs from lightning-induced surges and antenna coupling transients in X-band radar modules. IC Role / Device Role / Timing Role: Unidirectional TVS placed directly at SMA connector feedthrough to clamp sub-10 ns ESD events before reaching sensitive amplifier stages. Use Value: 4 pF capacitance avoids de-tuning of 8–12 GHz matching networks; 14.5 V clamping prevents LNA gate oxide breakdown. | Use Scenario: Shielding RS-422 telemetry receivers on LEO satellite payloads from launch-induced ESD and solar array switching noise. IC Role / Device Role / Timing Role: Standoff-voltage-matched TVS on differential data lines, leveraging 8.5 V VWM to align with ±5 V receiver common-mode range. Use Value: Category 1 bonding ensures survivability through 15 g RMS vibration; –55 °C to +175 °C rating covers orbital thermal extremes. |
| Aerospace Avionics Sensor Interface | MIL-STD-1553B Bus Protection |
Use Scenario: Safeguarding piezoresistive pressure transducer outputs in flight control systems against induced transients from actuator switching. IC Role / Device Role / Timing Role: Low-leakage (10 µA) TVS on analog output lines, preserving microvolt-level signal fidelity while blocking >1 kV spikes. Use Value: 10 µA ID at VWM prevents DC offset shift in 24-bit sigma-delta ADC front-ends; hermetic seal prevents long-term drift. | Use Scenario: Protecting MIL-STD-1553B bus couplers and transceivers from EFT bursts during ground handling and power-up sequencing. IC Role / Device Role / Timing Role: Unidirectional TVS on isolated bus stubs, selected for 8.5 V VWM to match bus common-mode voltage limits. Use Value: IEC61000-4-4 compliance ensures immunity to 40 A/m² fast transients; 150 W PPP handles worst-case bus fault energy. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ8.5A | Surface-mount DO-214AB package; 6.5 pF capacitance; 1500 W PPP rating; higher VC (13.6 V @ 100 A). | Designed for PCB space-constrained industrial drives; lacks hermetic seal and Category 1 bonding. | Choose for cost-sensitive commercial motor controls where radiation hardness and long-term hermeticity are not required. |
| 1N6105A | Axial-leaded, non-hermetic glass package; 100 W PPP; 10 pF capacitance; no Category 1 bond or MIL-STD-750 ESD qualification. | General-purpose telecom surge protection; not rated for aerospace or extended-temperature operation. | Choose for legacy telecom line cards requiring axial form factor but not mission-critical reliability. |
Compared with SMCJ8.5A and 1N6105A, the 1N8151US/TR uniquely combines ultra-low 4 pF capacitance, hermetic sealing, Category 1 metallurgical bonding, and MIL-STD-750 ESD immunity - making it irreplaceable in radiation-exposed, high-frequency, and long-lifecycle aerospace signal paths.
Availability
1N8151US/TR is available at Aetrix Electronics and suitable for radar transceivers, satellite telemetry links, avionics sensor interfaces, and MIL-STD-1553B bus protection requiring stable component supply across extended product lifecycles.
Supply support for 1N8151US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and aerospace-grade components.
The 1N81xx series belongs to Microsemi's high-reliability transient suppression product line, engineered specifically for defense, space, and critical infrastructure applications demanding zero-failure tolerance under extreme environmental stress.
FAQ
What is the clamping voltage of the 1N8151US/TR under a 10/1000 µs surge?
The 1N8151US/TR has a maximum clamping voltage (VC) of 14.5 V when subjected to its rated peak impulse current (IPP) of 11.7 A under the standard 10/1000 µs waveform. This value is guaranteed across the full operating temperature range and ensures protected circuitry remains below destructive voltage thresholds during transient events.
Is the 1N8151US/TR suitable for bidirectional signal line protection?
The 1N8151US/TR is unidirectional by design. For bidirectional protection, two 1N8151US/TR devices must be connected in anti-parallel - a configuration explicitly validated in Microsemi's application note T4-LDS-xxxx and shown in Figure 5 of the datasheet. This yields double the capacitance (8 pF) but maintains low-clamp performance on both polarities.
Does the 1N8151US/TR meet IEC61000-4-2 and IEC61000-4-4 standards?
Yes, the 1N8151US/TR is qualified for ESD immunity per IEC61000-4-2 and electrical fast transient (EFT) immunity per IEC61000-4-4. These capabilities are enabled by its low clamping voltage, fast response time (<1 ns), and robust junction construction - all confirmed in Microsemi's characterization testing and documented in the T4-LDS-xxxx datasheet.
What is the thermal resistance of the 1N8151US/TR, and how does it affect power derating?
The 1N8151US/TR has a thermal resistance junction-to-ambient (RθJA) of 150 °C/W. This value requires careful PCB thermal design: at ambient temperatures above 25 °C, peak pulse power must be derated per the curve in Figure 3 of the datasheet to ensure junction temperature stays within the –55 °C to +175 °C limit, especially during repetitive surge conditions.
How is the 1N8151US/TR marked and identified on the package?
The 1N8151US/TR is marked with body paint and the full part number "1N8151US" on the glass envelope. Polarity is indicated by a cathode band, and the axial leads are plated with RoHS-compliant matte tin over copper. The "TR" suffix denotes tape-and-reel packaging per EIA-296 standard, with approximately 340 mg unit weight.
1N8151US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 8.5V
- Voltage - Breakdown (Min):
- 9.5V
- Voltage - Clamping (Max) @ Ipp:
- 14.5V
- Current - Peak Pulse (10/1000µs):
- 10.3A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8151US/TR FAQ
1.How can I place an order for 1N8151US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8151US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8151US/TR reliable?
The price and inventory of 1N8151US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8151US/TR is usually 5 days.
3.What payment methods are accepted for 1N8151US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8151US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N8151US/TR?
1N8151US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8151US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8151US/TR?
For technical support, including 1N8151US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8151US/TR requirements.
6.How does Aetrix verify that 1N8151US/TR is sourced from the original manufacturer or authorized distributors?
All 1N8151US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8151US/TR meets industry standards.
7.What is the process for return or replacement of 1N8151US/TR?
All 1N8151US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8151US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8151US/TR part is unused and in its original packaging.
Return procedure for 1N8151US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8151US/TR Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

