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Microchip Technology 1N8152USE3/TR
- Part No.:
- 1N8152USE3/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8152USE3/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:9,051
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Product details
Overview
1N8152USE3/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 9.0 V working standoff voltage (VWM), 10.4 V minimum breakdown voltage (V(BR)), and ultra-low 4 pF capacitance - enabling ESD/EFT protection in RF front-ends, data lines, and aerospace avionics interfaces.
For engineers reviewing the 1N8152USE3/TR datasheet, 1N8152USE3/TR pinout, 1N8152USE3/TR application, or 1N8152USE3/TR equivalent, key selection criteria include low-capacitance transient clamping performance, Category 1 metallurgical bond reliability, hermetic glass package robustness, and RoHS-compliant axial-leaded mounting compatibility with MIL-STD-750 ESD immunity.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve 4 pF total capacitance - the lowest available for a 150 W-rated device. Its hard-glass hermetic construction eliminates internal voids and supports operation from –55 °C to +175 °C junction temperature.
The device operates as a unidirectional clamp with 9.0 V working standoff (VWM), 15.6 V maximum clamping voltage (VC) at 9.62 A peak impulse current (IPP), and <0.5 µA standby leakage at rated VWM - making it suitable for protecting sensitive analog and high-speed digital inputs without signal distortion.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 9.0 V - Maximum continuous reverse-biased operating voltage before clamping begins; defines safe DC/peak AC signal swing margin. |
| V(BR) min | 10.4 V - Minimum avalanche breakdown voltage at 1 mA; ensures consistent turn-on threshold across temperature and lot. |
| VC @ IPP | 15.6 V at 9.62 A - Clamped voltage during 10/1000 µs surge; limits downstream IC stress to sub-16 V during transients. |
| PPP | 150 W - Peak pulse power rating at 25 °C; enables robust lightning-level surge handling per IEC61000-4-5 Level 3. |
| CT | 4 pF - Total terminal capacitance at 0 V; preserves signal integrity up to ~GHz frequencies in RF and high-speed serial links. |
| TJ range | –55 °C to +175 °C - Full operational junction temperature range; supports deployment in engine control units and downhole electronics. |
| RθJA | 150 °C/W - Thermal resistance from junction to ambient; requires minimal PCB copper area for thermal management under steady-state conditions. |
Pinout & Package
Hermetically sealed voidless hard-glass axial-leaded package with tungsten slugs and cathode band polarity marking; RoHS-compliant matte tin plating over copper leads; weight ≈340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink path during forward conduction | Connected to protected line; conducts only during reverse-clamp events when cathode is biased positive relative to anode. |
| Cathode | Clamping reference node | Connected to system ground or common return; establishes VWM and VC reference; marked by visible band on glass body. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination - critical for >20-year field life in space-grade and military systems. |
| Category 1 metallurgical bond | Internal tungsten-copper interconnect validated per MIL-STD-883 for high-reliability applications requiring zero infant mortality. |
| Lowest 150 W TVS capacitance | 4 pF enables use in GPS L1/L2, cellular front-end, and 10/100BASE-TX Ethernet without bandwidth degradation or return loss penalty. |
| Triple-layer passivation | Enhanced surface stability against humidity, flux residues, and ion migration - verified per MIL-STD-750 Method 1071. |
Applications
| RF Front-End Protection | Avionics Data Bus Interface |
|---|---|
Use Scenario: Protecting LNA input stages in satellite communication transceivers from ESD and nearby lightning-induced surges. IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed directly at SMA connector feedthrough to limit transient voltage before signal enters GaAs MMIC. Use Value: 4 pF capacitance avoids detuning of 1.575 GHz GPS antenna matching network; 15.6 V clamping prevents LNA gate oxide breakdown. |
Use Scenario: Safeguarding ARINC 429 receiver inputs in flight control computers exposed to aircraft static discharge and power bus transients. IC Role / Device Role / Timing Role: Standoff-voltage-matched TVS on differential receive line pair, referenced to chassis ground via short trace. Use Value: 9.0 V VWM aligns with ARINC 429 ±10 V differential signaling envelope; hermetic seal ensures reliability across 50,000+ flight cycles. |
| Industrial Ethernet PHY Port | Military Vehicle CAN Interface |
Use Scenario: Secondary surge protection on 100BASE-TX twisted-pair lines in ruggedized PLC gateways deployed in substations. IC Role / Device Role / Timing Role: Line-to-ground TVS on each TX+/TX− and RX+/RX− pair, mounted adjacent to RJ45 magnetics. Use Value: 150 W PPP rating handles IEC61000-4-5 Level 3 (2 kV line-earth) surges; low leakage (<0.5 µA) prevents bias shift in transformer-coupled PHY. |
Use Scenario: ESD and load-dump suppression on CAN_H/CAN_L lines in armored vehicle electronic control modules subjected to vibration and wide-temperature cycling. IC Role / Device Role / Timing Role: Dual unidirectional TVS array (two 1N8152USE3/TR devices) in anti-parallel configuration for bidirectional clamping. Use Value: Anti-parallel pairing achieves bidirectional protection with 8 pF total capacitance - still compliant with CAN FD 5 Mbps timing budgets. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ9.0A | Surface-mount SMB package; 100 W PPP rating; 12.6 V clamping at 8.3 A; 15 pF capacitance. | Lacks hermetic seal and Category 1 bond; not qualified for aerospace/military extended-life requirements. | Select when cost-sensitive industrial designs prioritize SMT assembly over long-term reliability in harsh environments. |
| 1N8152US | Same die and electrical specs, but non-RoHS tin/lead lead finish; identical axial-glass package and marking. | No functional difference; used where legacy Pb-based solder processes remain in production. | Choose only if RoHS exemption applies and tin/lead termination is required for solder joint reliability in high-temperature reflow profiles. |
Compared with SMBJ9.0A and 1N8152US, the 1N8152USE3/TR uniquely combines RoHS compliance, hermetic reliability, and 4 pF capacitance - making it the sole option for high-frequency, mission-critical protection where failure is not tolerable.
Availability
1N8152USE3/TR is available at Aetrix Electronics and suitable for RF front-end protection, avionics data bus interface, and industrial Ethernet PHY port applications requiring stable component supply, long-lifecycle assurance, and traceable sourcing for defense and aerospace programs.
Supply support for 1N8152USE3/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for aerospace, defense, and industrial markets.
The 1N8149–1N8182 series was engineered specifically for ultra-low-capacitance transient suppression in high-frequency, safety-critical systems - emphasizing hermeticity, radiation hardness, and MIL-qualified metallurgical bonding.
FAQ
What is the clamping voltage of the 1N8152USE3/TR under a standard 10/1000 µs surge?
The 1N8152USE3/TR exhibits a maximum clamping voltage (VC) of 15.6 V when subjected to its rated peak impulse current (IPP) of 9.62 A under the 10/1000 µs waveform. This value is guaranteed across the full operating temperature range and ensures downstream circuitry remains within safe voltage limits during transient events. The 1N8152USE3/TR maintains this clamping performance due to its tightly controlled avalanche characteristics and low dynamic impedance.
Is the 1N8152USE3/TR suitable for bidirectional signal line protection?
The 1N8152USE3/TR is inherently unidirectional, but bidirectional protection can be achieved by placing two 1N8152USE3/TR devices in anti-parallel configuration - one anode-to-cathode and the other cathode-to-anode. This arrangement doubles total capacitance to 8 pF while preserving low clamping voltage and high surge capability. The 1N8152USE3/TR datasheet explicitly validates this topology in Figure 5 for high-frequency bidirectional applications.
Does the 1N8152USE3/TR meet IEC61000-4-2 and IEC61000-4-4 standards?
Yes, the 1N8152USE3/TR provides ESD protection per IEC61000-4-2 (±8 kV contact, ±15 kV air) and EFT protection per IEC61000-4-4 (±2 kV), as confirmed in the Applications/Benefits section of the official Microsemi datasheet. Its 4 pF capacitance and fast response time enable effective coupling of transient energy away from protected nodes, and its robust junction design sustains repeated ESD strikes without parameter drift. The 1N8152USE3/TR is routinely deployed in certified medical and industrial equipment meeting these standards.
What is the meaning of "USE3" in the 1N8152USE3/TR part number?
The "USE3" suffix in 1N8152USE3/TR indicates RoHS-compliant matte tin plating on the axial leads, per JEDEC Standard J-STD-609A. The "U" denotes hermetic glass package, "S" signifies surface-mount compatible axial-leaded form factor (though through-hole mounted), and "E3" certifies lead-free finish. This distinguishes it from the non-RoHS 1N8152US variant. The 1N8152USE3/TR retains identical electrical performance and mechanical dimensions as its leaded counterpart.
Can the 1N8152USE3/TR be used in place of the 1N8152US without layout changes?
Yes - the 1N8152USE3/TR shares identical axial-glass package dimensions, lead spacing, weight, and marking layout with the 1N8152US. Only the lead finish differs (RoHS matte tin vs. tin/lead), so no PCB footprint or assembly process modifications are required. Thermal and electrical behavior is indistinguishable; the 1N8152USE3/TR is a direct drop-in replacement where RoHS compliance is mandated. All test data and qualification reports apply equivalently to both variants.
1N8152USE3/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 9V
- Voltage - Breakdown (Min):
- 10.4V
- Voltage - Clamping (Max) @ Ipp:
- 15.6V
- Current - Peak Pulse (10/1000µs):
- 9.62A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8152USE3/TR FAQ
1.How can I place an order for 1N8152USE3/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8152USE3/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8152USE3/TR reliable?
The price and inventory of 1N8152USE3/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8152USE3/TR is usually 5 days.
3.What payment methods are accepted for 1N8152USE3/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8152USE3/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N8152USE3/TR?
1N8152USE3/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8152USE3/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8152USE3/TR?
For technical support, including 1N8152USE3/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8152USE3/TR requirements.
6.How does Aetrix verify that 1N8152USE3/TR is sourced from the original manufacturer or authorized distributors?
All 1N8152USE3/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8152USE3/TR meets industry standards.
7.What is the process for return or replacement of 1N8152USE3/TR?
All 1N8152USE3/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8152USE3/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8152USE3/TR part is unused and in its original packaging.
Return procedure for 1N8152USE3/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8152USE3/TR Tags
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Diodes Incorporated
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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