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Microchip Technology 1N8152US/TR
- Part No.:
- 1N8152US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8152US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:6,875
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Product details
Overview
1N8152US/TR from Microsemi is a voidless-hermetically-sealed unidirectional Transient Voltage Suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 9.0 V working standoff voltage (VWM), 15.6 V maximum clamping voltage (VC) at 9.62 A IPP, and ultra-low 4 pF capacitance - enabling ESD/EFT protection in RF, datacom, and aerospace interfaces.
For engineers reviewing the 1N8152US/TR datasheet, 1N8152US/TR pinout, 1N8152US/TR application, or 1N8152US/TR equivalent, key selection criteria include low-capacitance transient suppression for >1 GHz signal integrity, Category 1 metallurgical bond reliability, hermetic glass package robustness, and compliance with IEC61000-4-2/4-4/4-5 standards.
Technical Context
This TVS uses a unique series-connected anti-parallel rectifier diode architecture to achieve 4 pF total capacitance while maintaining unidirectional operation and 150 W surge capability. Its hard-glass hermetic construction with tungsten slugs ensures stable thermal resistance (150 °C/W) and operation from –55 °C to +175 °C junction temperature.
The device exhibits 0.075 %/°C breakdown voltage temperature coefficient and 0.5 µA standby current at 9.0 V VWM. Clamping occurs at 15.6 V under 9.62 A peak impulse current (10/1000 µs), delivering predictable overvoltage limiting without signal distortion in sensitive analog or high-speed digital paths.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 9.0 V - Maximum continuous reverse standoff voltage before leakage exceeds 0.5 µA; sets upper limit for protected line DC bias. |
| VC @ IPP | 15.6 V at 9.62 A - Clamping voltage during 10/1000 µs surge; defines worst-case overvoltage seen by downstream ICs. |
| PPP | 150 W - Peak pulse power handling at 25 °C; enables robust lightning/ESD immunity per IEC61000-4-5 Level 3. |
| CT | 4 pF - Total terminal capacitance at 0 V; preserves signal integrity in >1 GHz RF front-ends and USB 3.x/PCIe lanes. |
| TJ Range | –55 °C to +175 °C - Extended junction temperature range supports aerospace, downhole, and military embedded systems. |
| RθJA | 150 °C/W - Thermal resistance from junction to ambient; requires minimal PCB copper area for 1 W steady-state dissipation. |
| αV(BR) | 0.075 %/°C - Low temperature coefficient ensures stable breakdown across operating temperature extremes. |
Pinout & Package
Package: Axial-leaded, voidless hermetically sealed hard-glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink path during reverse-biased clamping | Connected to protected signal line; conducts surge current when voltage exceeds VWM. |
| Cathode | Reference node tied to system ground or common return | Marked with band; establishes unidirectional polarity; must be held at lowest potential in protected circuit. |
Key Features
| Feature | Design Value |
|---|---|
| Low capacitance architecture | 4 pF achieved via integrated anti-parallel rectifier - eliminates trade-off between surge rating and HF bandwidth. |
| Category 1 metallurgical bond | Internal bond structure qualified for high-reliability applications including space-grade and avionics systems. |
| Hermetic glass sealing | Voidless seal prevents moisture ingress and parameter drift over 20+ year field life in harsh environments. |
| Triple-layer passivation | Enhanced surface insulation prevents leakage path formation under humidity and contamination stress. |
| IEC61000-4-2/4-4/4-5 compliance | Validated performance for ±8 kV contact / ±15 kV air ESD, 4 kV EFT bursts, and 2 kV lightning surges (Level 3). |
Applications
| RF Front-End Protection | Avionics Data Bus Interface |
|---|---|
Use Scenario: Protecting LNA inputs and mixer outputs in S-band radar transceivers from induced lightning transients. IC Role / Device Role / Timing Role: Unidirectional clamping element placed directly at SMA connector feedthrough to minimize stub inductance. Use Value: 4 pF capacitance avoids gain roll-off above 3 GHz; 15.6 V clamping prevents LNA saturation during 10/1000 µs surges. |
Use Scenario: Safeguarding ARINC 429 receive inputs against ESD events during aircraft maintenance and ground handling. IC Role / Device Role / Timing Role: Standoff-limited TVS on differential pair, referenced to chassis ground with <1 ns response. Use Value: 0.5 µA leakage at 9.0 V VWM prevents signal degradation; hermetic seal withstands 85 °C/85% RH environmental testing. |
| Military SATCOM Antenna Control | Downhole Telemetry Modem |
Use Scenario: Shielding phase-shifter control lines in Ka-band satellite uplink amplifiers from electrostatic discharge during payload integration. IC Role / Device Role / Timing Role: Point-of-entry protection on 0–5 V analog control bus, mounted within 2 mm of connector. Use Value: –55 °C to +175 °C operation survives thermal cycling in vacuum bake-out; 0.075 %/°C αV(BR) maintains accuracy across orbit temperature swings. |
Use Scenario: Securing RS-485 telemetry links in oil/gas wellhead controllers exposed to lightning-induced ground potential rise. IC Role / Device Role / Timing Role: Primary surge limiter on twisted-pair bus, paired with secondary MOV for energy sharing. Use Value: 150 W PPP handles 10 kA surge currents; tungsten slug construction resists mechanical shock during drilling vibration. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ9.0A | Surface-mount SMB package; 100 W PPP; 12.6 V VC @ 7.3 A; 100 pF capacitance | Lacks low-capacitance performance for RF/microwave use; suitable only for lower-frequency industrial buses | Select when board space is constrained and signal bandwidth < 100 MHz; avoid for RF front-end protection. |
| 1N8152US (non-TR) | Identical electrical specs; axial-leaded tape-and-reel variant differs only in packaging format (TR = tape & reel) | No functional difference; same reliability level, hermetic seal, and Category 1 bonding | Choose 1N8152US/TR for automated SMT placement; select bulk 1N8152US for manual prototyping or repair. |
Compared with SMBJ9.0A, the 1N8152US/TR provides 25× lower capacitance for RF signal integrity but requires axial through-hole mounting; versus 1N8152US, the TR suffix adds EIA-296 tape-and-reel packaging for pick-and-place compatibility without altering electrical or reliability characteristics.
Availability
1N8152US/TR is available at Aetrix Electronics and suitable for RF front-end protection, avionics data bus interface, and downhole telemetry requiring stable component supply across extended temperature and high-reliability environments.
Supply support for 1N8152US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The 1N8152US/TR belongs to Microsemi's legacy T4-LDS series of hermetic TVS diodes, engineered specifically for mission-critical transient suppression where failure is not an option - emphasizing radiation hardness, long-term parameter stability, and extreme environmental resilience.
FAQ
What is the clamping voltage of the 1N8152US/TR under standard surge conditions?
The 1N8152US/TR clamps to a maximum of 15.6 V when subjected to a 10/1000 µs waveform with a peak impulse current of 9.62 A. This value is guaranteed across the full operating temperature range and reflects worst-case voltage seen by protected circuitry during transient events. The 1N8152US/TR achieves this performance while maintaining only 4 pF capacitance - critical for preserving signal fidelity in high-frequency applications.
Is the 1N8152US/TR suitable for bidirectional signal line protection?
No - the 1N8152US/TR is strictly unidirectional. For bidirectional protection, two 1N8152US/TR devices must be connected in anti-parallel configuration, as documented in Figure 5 of the Microsemi datasheet. This arrangement doubles the effective capacitance to 8 pF but retains the same 150 W surge rating per polarity. The 1N8152US/TR itself does not support symmetrical clamping in both directions.
Does the 1N8152US/TR meet space-level reliability requirements?
Yes - the 1N8152US/TR features Category 1 internal metallurgical bonds and voidless hermetic glass packaging, both qualified for high-reliability applications including spaceflight. It is inherently radiation-hardened per Microsemi MicroNote 050 and rated for operation from –55 °C to +175 °C, making it suitable for satellite power management and payload interface circuits where parameter stability under radiation exposure is mandatory.
What is the maximum steady-state power dissipation for the 1N8152US/TR?
The 1N8152US/TR has a maximum steady-state (average) power rating of 1.0 W at TA = 25 °C, limited by its 150 °C/W junction-to-ambient thermal resistance. This rating assumes adequate PCB copper area for heat spreading; derating is required above 25 °C ambient per the Figure 3 derating curve. The 1N8152US/TR is not intended for continuous power regulation - its design focus is transient energy absorption, not DC power handling.
How does the 1N8152US/TR achieve its ultra-low 4 pF capacitance?
The 1N8152US/TR achieves 4 pF capacitance through a proprietary architecture integrating a TVS junction in series with a reverse-oriented rectifier diode inside a single hermetic glass package. This configuration cancels parasitic capacitance contributions while preserving unidirectional clamping behavior. Unlike conventional planar TVS diodes, the 1N8152US/TR's structure avoids junction-area scaling compromises - enabling both 150 W surge capability and RF-friendly low capacitance simultaneously.
1N8152US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 9V
- Voltage - Breakdown (Min):
- 10.4V
- Voltage - Clamping (Max) @ Ipp:
- 15.6V
- Current - Peak Pulse (10/1000µs):
- 9.62A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8152US/TR FAQ
1.How can I place an order for 1N8152US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8152US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8152US/TR reliable?
The price and inventory of 1N8152US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8152US/TR is usually 5 days.
3.What payment methods are accepted for 1N8152US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8152US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N8152US/TR?
1N8152US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8152US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8152US/TR?
For technical support, including 1N8152US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8152US/TR requirements.
6.How does Aetrix verify that 1N8152US/TR is sourced from the original manufacturer or authorized distributors?
All 1N8152US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8152US/TR meets industry standards.
7.What is the process for return or replacement of 1N8152US/TR?
All 1N8152US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8152US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8152US/TR part is unused and in its original packaging.
Return procedure for 1N8152US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8152US/TR Tags
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