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Microchip Technology 1N8153USE3/TR
- Part No.:
- 1N8153USE3/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8153USE3/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:5,049
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Product details
Overview
1N8153USE3/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 10.0 V working standoff voltage (VWM), 16.9 V clamping voltage (VC) at 11.7 A peak pulse current (IPP), 4 pF capacitance, and 150 W peak pulse power rating for 10/1000 µs waveform. It employs a series-connected rectifier diode to achieve ultra-low capacitance and is designed for high-frequency ESD/EFT protection in aerospace-grade, high-reliability signal lines.
For engineers reviewing the 1N8153USE3/TR datasheet, 1N8153USE3/TR pinout, 1N8153USE3/TR application, or 1N8153USE3/TR equivalent, key selection criteria include its 4 pF capacitance, Category 1 metallurgical bond reliability, hermetic glass package, RoHS-compliant e3 marking, and suitability for IEC61000-4-2/4-4/4-5 compliance-critical interfaces.
Technical Context
This TVS uses a unique internal architecture with a rectifier diode placed in series and opposite polarity to the avalanche junction, enabling ultra-low 4 pF total capacitance while maintaining unidirectional surge suppression. Its hard-glass hermetic construction incorporates tungsten slugs and Category 1 internal metallurgical bonds for radiation hardness and MIL-STD-750-compliant ESD immunity.
Rated for -55°C to +175°C junction temperature, it delivers 150 W peak pulse power at 25°C with 0.01% impulse repetition rate and 1.0 W steady-state power dissipation. Clamping occurs at 16.9 V under 11.7 A IPP (10/1000 µs), with 1.0 µA standby leakage at 10.0 V VWM.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 10.0 V - Maximum continuous reverse-biased operating voltage before conduction begins |
| VC @ IPP | 16.9 V at 11.7 A - Clamped voltage during 10/1000 µs surge, limiting downstream circuit stress |
| CT | 4 pF - Enables protection of >1 GHz RF/data lines without signal integrity degradation |
| PPP | 150 W - Sustains high-energy transients per IEC61000-4-5 Level 3/4 secondary lightning tests |
| TJ Range | -55°C to +175°C - Supports operation in extended-temperature avionics and downhole electronics |
| RθJA | 150°C/W - Requires minimal PCB copper area for thermal management in sealed enclosures |
| e3 Marking | RoHS-compliant matte tin plating - Meets environmental compliance without sacrificing solderability or corrosion resistance |
Pinout & Package
Hermetically sealed voidless hard-glass axial-leaded package with cathode band polarity marking; leads are tin/lead or RoHS-compliant matte tin over copper; weight ≈340 mg; dimensions: BD = 0.060–0.085", BL = 0.106–0.175", LD = 0.028–0.032", LL = 0.800–1.300".
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive terminal during normal operation | Connected to protected line; blocks current until VWM exceeded |
| Cathode | Negative terminal with band marking | Connected to ground or low-impedance return; conducts surge current to reference plane |
Key Features
| Feature | Design Value |
|---|---|
| Series rectifier + TVS topology | Enables 4 pF capacitance - lowest among 150 W-rated TVS devices for RF front-end protection |
| Category 1 metallurgical bond | Guarantees reliability in space-grade applications per MIL-PRF-19500/530 |
| Voidless hermetic glass seal | Prevents moisture ingress and parametric drift over 20+ year field life in harsh environments |
| Triple-layer passivation | Enhances surface insulation resistance >10¹² Ω under 85°C/85% RH humidity stress |
Applications
| Avionics Data Bus Protection | Satellite RF Front-End Protection |
|---|---|
Use Scenario: Protecting ARINC 429 or MIL-STD-1553B data lines from induced lightning transients and ESD events in flight control systems. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between bus line and chassis ground to limit voltage excursions without distorting 1 Mbps digital waveforms. Use Value: 4 pF capacitance prevents rise-time degradation; 16.9 V clamping ensures receiver input stays within absolute maximum ratings during 150 W surges. | Use Scenario: Safeguarding L-band (1–2 GHz) LNAs and mixers in satellite transceivers against ESD during handling and launch vibration-induced tribocharging. IC Role / Device Role / Timing Role: Low-capacitance TVS mounted directly at RF connector interface to shunt fast transients before entering sensitive GaAs MMIC stages. Use Value: 4 pF CT avoids impedance mismatch and insertion loss; hermetic seal prevents performance drift in vacuum and thermal cycling. |
| Downhole Telemetry Interface | Military Radar Pulse Modulator |
Use Scenario: Shielding RS-485 telemetry links in oil/gas wellhead controllers exposed to electrochemical transients and high ambient temperatures up to 175°C. IC Role / Device Role / Timing Role: Standoff-rated TVS on differential pair, leveraging 10.0 V VWM to tolerate common-mode offsets while clamping EFT bursts per IEC61000-4-4. Use Value: -55°C to +175°C TJ range enables direct mounting on high-temp PCBs; Category 1 bond ensures no latent failure after 10⁵ thermal cycles. | Use Scenario: Protecting gate-drive inputs of SiC MOSFETs in pulsed radar modulators subjected to repetitive 150 W switching transients and radiated RFI. IC Role / Device Role / Timing Role: Fast-response unidirectional clamp on isolated gate driver supply rail to prevent latch-up during dV/dt-induced coupling. Use Value: 11.7 A IPP handles multiple consecutive pulses; 150°C/W RθJA allows compact layout without heatsinking in air-cooled enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ10A | Surface-mount DO-214AB package; 400 W PPP; 17.0 V VC @ 17.1 A; 100 pF CT | Higher capacitance limits use to sub-100 MHz signals; better suited for power rail vs. high-speed data line protection | Select when board space is constrained and RF performance is not critical |
| 1N6372 | Axial-leaded, non-hermetic epoxy package; 150 W PPP; 17.0 V VC @ 11.8 A; 15 pF CT; commercial-grade reliability | Lacks Category 1 bond and hermetic seal; unsuitable for aerospace/military long-life deployments | Select for cost-sensitive industrial controls where 15 pF capacitance is acceptable |
Compared with SMCJ10A and 1N6372, the 1N8153USE3/TR uniquely combines 4 pF capacitance, hermetic reliability, and axial-leaded serviceability-making it irreplaceable for RF, avionics, and extended-temperature applications where signal fidelity and lifetime assurance are non-negotiable.
Availability
1N8153USE3/TR is available at Aetrix Electronics and suitable for avionics data buses, satellite RF front-ends, downhole telemetry interfaces requiring stable component supply across extended product lifecycles and high-reliability qualification programs.
Supply support for 1N8153USE3/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and radiation-hardened components for aerospace, defense, and industrial markets.
The 1N81xx series was developed to address ultra-low-capacitance transient suppression needs in mission-critical RF and digital interfaces where conventional TVS diodes introduce unacceptable signal distortion or reliability risk.
FAQ
What is the clamping voltage of the 1N8153USE3/TR under standard 10/1000 µs surge conditions?
The 1N8153USE3/TR has a maximum clamping voltage (VC) of 16.9 V when subjected to its rated peak impulse current (IPP) of 11.7 A using the 10/1000 µs waveform. This value is measured at 25°C ambient and ensures protected circuits remain within safe operating limits during transient events. The 1N8153USE3/TR achieves this performance while maintaining only 4 pF capacitance - a key differentiator for high-speed signal integrity.
Does the 1N8153USE3/TR meet IEC61000-4-2 and IEC61000-4-4 standards?
Yes, the 1N8153USE3/TR is specified for ESD protection per IEC61000-4-2 and electrical fast transient (EFT) immunity per IEC61000-4-4. Its 4 pF capacitance and fast response enable effective suppression of ±8 kV contact and ±15 kV air discharge ESD events, while its 150 W peak pulse power rating supports robust EFT burst handling. The 1N8153USE3/TR's hermetic construction further ensures parameter stability across repeated stress cycles required by these standards.
What does the "USE3/TR" suffix indicate in the 1N8153USE3/TR part number?
The "USE3/TR" suffix denotes RoHS-compliant matte tin plating (e3) and tape-and-reel packaging (TR). The "U" indicates the axial-leaded "A" package variant per Microsemi's nomenclature, and "S" signifies surface-mount compatibility - though the 1N8153USE3/TR remains an axial-leaded device optimized for through-hole reliability. This full designation confirms the 1N8153USE3/TR meets environmental compliance and logistics requirements for automated assembly and high-reliability deployment.
Can the 1N8153USE3/TR be used in bidirectional protection configurations?
The 1N8153USE3/TR is inherently unidirectional, but bidirectional protection can be achieved by connecting two units in anti-parallel - as documented in Figure 5 of the official datasheet. This configuration doubles the effective capacitance to 8 pF while preserving low-clamp performance. Unlike monolithic bidirectional TVS devices, this approach retains the 1N8153USE3/TR's hermetic reliability and Category 1 bond integrity across both polarities.
Is the 1N8153USE3/TR suitable for operation at 175°C junction temperature?
Yes, the 1N8153USE3/TR is rated for continuous operation from -55°C to +175°C junction temperature, validated per MIL-STD-750 test methods. Its voidless hermetic glass package and Category 1 metallurgical bonds ensure parametric stability and no latent failure mechanisms at maximum temperature. This makes the 1N8153USE3/TR appropriate for downhole, engine-mounted, and other extreme-environment applications where the 1N8153USE3/TR must sustain full specification performance without derating.
1N8153USE3/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 10V
- Voltage - Breakdown (Min):
- 11.4V
- Voltage - Clamping (Max) @ Ipp:
- 16.9V
- Current - Peak Pulse (10/1000µs):
- 8.88A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8153USE3/TR FAQ
1.How can I place an order for 1N8153USE3/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8153USE3/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8153USE3/TR reliable?
The price and inventory of 1N8153USE3/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8153USE3/TR is usually 5 days.
3.What payment methods are accepted for 1N8153USE3/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8153USE3/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N8153USE3/TR?
1N8153USE3/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8153USE3/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8153USE3/TR?
For technical support, including 1N8153USE3/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8153USE3/TR requirements.
6.How does Aetrix verify that 1N8153USE3/TR is sourced from the original manufacturer or authorized distributors?
All 1N8153USE3/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8153USE3/TR meets industry standards.
7.What is the process for return or replacement of 1N8153USE3/TR?
All 1N8153USE3/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8153USE3/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8153USE3/TR part is unused and in its original packaging.
Return procedure for 1N8153USE3/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8153USE3/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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