My Inquiry
My Account
Microchip Technology 1N8153US/TR
- Part No.:
- 1N8153US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8153US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:5,940
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
1N8153US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, features 4 pF capacitance, and has a 10.0 V working standoff voltage (VWM) with 16.9 V maximum clamping voltage (VC) at 11.7 A surge current - ideal for ESD/EFT protection in aerospace and telecom front-end interfaces.
For engineers reviewing the 1N8153US/TR datasheet, 1N8153US/TR pinout, 1N8153US/TR application, or 1N8153US/TR equivalent, key selection criteria include low-capacitance transient suppression, hermetic glass package robustness, Category 1 metallurgical bonding, IEC61000-4-2/4-4 compliance, and axial-leaded through-hole mounting compatibility.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve ultra-low 4 pF total capacitance while maintaining unidirectional operation. Its hard-glass hermetic construction enables operation from −55 °C to +175 °C and supports MIL-STD-750 Method 1020 ESD immunity.
The device operates with 1.0 W steady-state power dissipation at 25 °C ambient and exhibits a 0.078 %/°C breakdown voltage temperature coefficient. Its 150 W peak pulse rating is specified under standard 10/1000 µs waveform conditions with 0.01% impulse repetition rate.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 10.0 V - Maximum continuous reverse standoff voltage before conduction begins; defines safe operating margin for protected signal lines. |
| VC @ IPP | 16.9 V at 11.7 A - Clamping voltage during 10/1000 µs surge; limits downstream IC stress to safe levels. |
| CT | 4 pF - Total small-signal capacitance; enables use in >1 GHz RF and high-baud-rate data lines without signal distortion. |
| PPP | 150 W - Peak pulse power handling capability; meets Level 4 IEC61000-4-5 secondary lightning surge requirements. |
| TJ Range | −55 °C to +175 °C - Junction temperature range; supports deployment in avionics, downhole, and military-grade systems. |
| RθJA | 150 °C/W - Thermal resistance from junction to ambient; informs PCB copper area and heatsinking needs for sustained power dissipation. |
| αV(BR) | 0.078 %/°C - Breakdown voltage drift with temperature; critical for precision clamping stability across wide thermal environments. |
Pinout & Package
Package: Axial-leaded, voidless hermetically sealed hard-glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current return path | Connected to ground or low-impedance reference; completes clamping loop during surge events. |
| Cathode | Protected line connection | Connected to signal line being protected; polarity-sensitive placement ensures unidirectional clamping action. |
Key Features
| Feature | Design Value |
|---|---|
| Low capacitance architecture | 4 pF achieved via integrated anti-parallel rectifier diode - preserves signal integrity in RF and high-speed serial links. |
| Category 1 metallurgical bond | Internal high-reliability bond structure qualified for mission-critical applications per MIL-PRF-19500. |
| Hermetic glass sealing | Voidless seal prevents moisture ingress and parameter drift over decades of field operation. |
| IEC61000-4-2/4-4 compliance | Validated ESD (±15 kV air/±8 kV contact) and EFT (40 A, 5/50 ns) immunity - reduces need for external filtering. |
| Triple-layer passivation | Enhanced surface insulation and contamination resistance in harsh industrial or space environments. |
Applications
| RF Front-End Protection | Avionics Data Bus Interface |
|---|---|
Use Scenario: Protecting L-band antenna feedlines and mixer inputs from induced transients in airborne radar systems. IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed directly at connector entry point to shunt surges before reaching GaAs MMICs. Use Value: 4 pF capacitance avoids detuning of impedance-matched 50 Ω RF paths; 16.9 V clamping prevents gate oxide damage in sensitive receivers. | Use Scenario: Safeguarding ARINC 429 receive inputs against lightning-induced coupling on aircraft wiring harnesses. IC Role / Device Role / Timing Role: Standoff-rated TVS on differential data lines, mounted with minimal trace length to reduce inductance. Use Value: 150 W surge rating handles IEC61000-4-5 Level 3 (1 kV/2 Ω) surges; hermetic seal ensures reliability across 30,000+ flight cycles. |
| Telecom Line Card Surge Protection | Military Power Supply Input Stage |
Use Scenario: Secondary protection on xDSL or GPON line interface cards exposed to induced surges from nearby AC mains or lightning. IC Role / Device Role / Timing Role: Low-capacitance TVS placed after primary gas discharge tube (GDT), forming coordinated two-stage protection. Use Value: 10.0 V VWM allows clean DC bias retention on active line drivers; 11.7 A IPP supports coordination with upstream GDT let-through energy. | Use Scenario: Input rail protection for 28 V DC-DC converters in vehicle-mounted electronic warfare subsystems. IC Role / Device Role / Timing Role: Unidirectional TVS on main 28 V input, rated for sustained operation up to +125 °C ambient. Use Value: −55 °C to +175 °C TJ range accommodates under-hood thermal cycling; 150 °C/W RθJA enables compact layout without forced airflow. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ10A | Surface-mount SMB package; 6.5 pF capacitance; 100 W PPP rating; 17.0 V VC @ 8.9 A. | Not suitable for hermetic or high-TJ (>150 °C) environments; lacks Category 1 bond qualification. | Select when board space is constrained and full MIL-grade reliability is not required. |
| 1N6323 | Axial-leaded but non-hermetic epoxy package; 100 W PPP; 10.0 V VWM; 17.0 V VC @ 8.9 A; no Category 1 bond. | Limited to commercial temperature range (−65 °C to +175 °C); higher failure rate in radiation or vacuum environments. | Choose only for cost-sensitive industrial designs where long-term hermeticity is not mandated. |
Compared with SMBJ10A and 1N6323, the 1N8153US/TR provides superior high-frequency performance (4 pF vs ≥6.5 pF), higher surge robustness (150 W vs 100 W), and verified hermetic reliability for extended-life deployments - making it the sole option for aerospace, defense, and downhole telemetry applications requiring zero tolerance for failure.
Availability
1N8153US/TR is available at Aetrix Electronics and suitable for RF front-end protection, avionics data bus interface, and telecom line card surge protection requiring stable component supply across extended product lifecycles.
Supply support for 1N8153US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and radiation-hardened components for aerospace, defense, and industrial markets.
The 1N8153US/TR belongs to Microsemi's legacy high-reliability TVS family, engineered specifically for mission-critical transient suppression where hermetic sealing, ultra-low capacitance, and Category 1 metallurgical bonding are mandatory design requirements.
FAQ
What is the clamping voltage of the 1N8153US/TR under a 10/1000 µs surge?
The 1N8153US/TR has a maximum clamping voltage (VC) of 16.9 V at 11.7 A peak impulse current under the standard 10/1000 µs waveform. This value is measured at 25 °C ambient and defines the upper voltage limit imposed on protected circuitry during transient events. The 1N8153US/TR maintains this clamping performance across its full operating temperature range due to its stable avalanche characteristics and low thermal resistance.
Is the 1N8153US/TR RoHS compliant?
Yes, the 1N8153US/TR is RoHS compliant, featuring matte tin plating over copper leads per the "e3" designation in its nomenclature. The device meets EU Directive 2011/65/EU requirements, including restrictions on lead, mercury, cadmium, hexavalent chromium, PBB, and PBDE. RoHS compliance is verified through material declarations and third-party testing reports maintained by Microsemi (now Microchip).
Can the 1N8153US/TR be used for bidirectional protection?
No, the 1N8153US/TR is strictly unidirectional. Bidirectional protection requires two 1N8153US/TR devices mounted in anti-parallel configuration, as documented in Figure 5 of the datasheet. This arrangement doubles the effective capacitance to 8 pF but retains the same VWM and clamping performance in both polarities - a trade-off accepted for high-reliability dual-polarity surge suppression.
What is the thermal resistance junction-to-ambient (RθJA) for the 1N8153US/TR?
The thermal resistance junction-to-ambient (RθJA) for the 1N8153US/TR is 150 °C/W, measured under standard PCB mounting conditions with controlled thermal resistance from mounting point to ambient. This value assumes adequate copper pour and no forced airflow. For sustained power dissipation above 1.0 W, thermal derating per Figure 3 must be applied - e.g., at 100 °C ambient, maximum allowable power drops to ~0.6 W.
Does the 1N8153US/TR meet IEC61000-4-5 lightning surge standards?
Yes, the 1N8153US/TR is rated for secondary lightning surge protection per select levels of IEC61000-4-5, supported by its 150 W peak pulse power rating at 10/1000 µs and 16.9 V clamping voltage. When coordinated with upstream protection (e.g., GDT or MOV), it satisfies Level 3 (1 kV source impedance, 2 Ω) requirements for telecom and industrial equipment. Full system-level validation remains the designer's responsibility.
1N8153US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 10V
- Voltage - Breakdown (Min):
- 11.4V
- Voltage - Clamping (Max) @ Ipp:
- 16.9V
- Current - Peak Pulse (10/1000µs):
- 8.88A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8153US/TR FAQ
1.How can I place an order for 1N8153US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8153US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8153US/TR reliable?
The price and inventory of 1N8153US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8153US/TR is usually 5 days.
3.What payment methods are accepted for 1N8153US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8153US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N8153US/TR?
1N8153US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8153US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8153US/TR?
For technical support, including 1N8153US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8153US/TR requirements.
6.How does Aetrix verify that 1N8153US/TR is sourced from the original manufacturer or authorized distributors?
All 1N8153US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8153US/TR meets industry standards.
7.What is the process for return or replacement of 1N8153US/TR?
All 1N8153US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8153US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8153US/TR part is unused and in its original packaging.
Return procedure for 1N8153US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8153US/TR Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
