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Microchip Technology 1N8155US/TR
- Part No.:
- 1N8155US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8155US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:8,098
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Product details
Overview
1N8155US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 12.0 V working standoff voltage (VWM), 20.2 V maximum clamping voltage (VC) at 11.7 A IPP, and ultra-low 4 pF capacitance - enabling ESD/EFT protection in RF front-ends and data lines up to 1 Gbps.
For engineers reviewing the 1N8155US/TR datasheet, 1N8155US/TR pinout, 1N8155US/TR application, or 1N8155US/TR equivalent, key selection criteria include its Category 1 metallurgical bond reliability, hermetic glass package for harsh environments, low-leakage standby current (1 µA max at 12.0 V), and compatibility with IEC61000-4-2 Level 4 and IEC61000-4-4 compliance-critical designs.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve 4 pF total capacitance - the lowest among 150 W-rated TVS devices. Its hard-glass hermetic construction eliminates voids and supports operation from –55 °C to +175 °C junction temperature.
The device operates as a unidirectional clamp with cathode-anode polarity, requiring correct orientation in series with protected signal paths. It achieves 11.7 A peak impulse current (IPP) at 20.2 V clamping while maintaining <1 µA leakage at rated VWM of 12.0 V, making it suitable for low-power, high-impedance interfaces.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 12.0 V - Maximum continuous reverse-bias voltage before significant leakage; sets upper limit for protected line DC bias. |
| VC @ IPP | 20.2 V at 11.7 A - Clamping voltage during 10/1000 µs surge; determines worst-case overvoltage seen by downstream IC. |
| PPP | 150 W - Peak pulse power handling per IEC61000-4-5 waveform; defines transient energy absorption capability. |
| CT | 4 pF - Total terminal capacitance at 0 V; enables use on >500 MHz RF traces without signal integrity degradation. |
| ID | 1 µA max - Standby leakage at VWM; critical for battery-powered or high-impedance sensor interfaces. |
| TJ Range | –55 °C to +175 °C - Junction temperature operating range; supports aerospace, downhole, and military-grade thermal cycling. |
| RθJA | 150 °C/W - Thermal resistance from junction to ambient; informs PCB copper area requirements for sustained power dissipation. |
Pinout & Package
Package: Axial-leaded, voidless hermetically sealed hard-glass case with tungsten slugs; cathode identified by band; RoHS-compliant matte tin plating over copper leads; weight ≈340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink path during positive transients | Connected to protected line; conducts only when voltage exceeds VBR (~13.8 V min). |
| Cathode | Reference node / ground return | Connected to system ground or low-impedance return; polarity must match schematic symbol to avoid forward conduction. |
Key Features
| Feature | Design Value |
|---|---|
| Category 1 metallurgical bond | Internal bond structure qualified per MIL-STD-750 Method 2019 for high-reliability aerospace/military use. |
| Triple-layer passivation | Enhanced surface stability against humidity, contamination, and long-term parametric drift in sealed enclosures. |
| Voidless hermetic seal | Eliminates internal moisture ingress and pressure differentials - prevents parameter shift over 20+ year field life. |
| Nonsensitive to ESD | Qualified per MIL-STD-750 Method 1020 - no damage or parameter change after direct human-body-model discharge. |
| Inherent radiation hardness | Unaffected by total ionizing dose (TID) up to 100 krad(Si); validated in MicroNote 050 for space applications. |
Applications
| RF Transceiver Front-End Protection | Avionics Data Bus Interface |
|---|---|
Use Scenario: Protecting L-band (1–2 GHz) antenna switch control lines and PA output matching networks from ESD and lightning-induced surges. IC Role / Device Role / Timing Role: Unidirectional clamping element placed in series with signal path, leveraging 4 pF capacitance to preserve S21 insertion loss and VSWR. Use Value: Prevents gate oxide rupture in GaAs FETs and maintains <0.1 dB insertion loss degradation at 1.5 GHz due to minimal parasitic loading. | Use Scenario: Safeguarding ARINC 429 receive inputs in flight control computers exposed to induced transients from actuator switching. IC Role / Device Role / Timing Role: Standoff-clamp TVS on differential receiver inputs, oriented to block negative transients while passing +10 V nominal logic. Use Value: Ensures <1 µA leakage at 12 V bias preserves input hysteresis margin and avoids false triggering during 100 V/µs edge rates. |
| Downhole Telemetry Modem | Military SATCOM Terminal |
Use Scenario: Shielding RS-485 PHY lines in oil/gas wellhead controllers operating at 175 °C ambient and subject to cable discharge events. IC Role / Device Role / Timing Role: High-temp-rated unidirectional TVS mounted directly at connector entry point, leveraging hermetic glass package. Use Value: Maintains 12.0 V VWM and <1 µA leakage across full –55 °C to +175 °C range - no derating required for thermal design. | Use Scenario: Protecting Ka-band upconverter control lines in mobile SATCOM terminals subjected to MIL-STD-461 CS115 conducted transients. IC Role / Device Role / Timing Role: Low-capacitance transient clamp on PLL tuning voltage and LO enable lines. Use Value: 4 pF capacitance avoids phase noise degradation (<0.5 dBc/Hz at 100 kHz offset), while 150 W rating absorbs 100 A-level surges. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ12A | Surface-mount DO-214AB package; 400 W PPP; 13.3 V VWM; 19.9 V VC @ 21.1 A; 100 pF capacitance. | Higher capacitance limits use to sub-100 MHz signals; better suited for power rail vs. signal line protection. | Select when board space is constrained and signal frequency <10 MHz; avoid for RF or high-speed digital interfaces. |
| 1N6105A | Axial-leaded, hermetic glass; 150 W PPP; 12 V VWM; 20.1 V VC @ 11.7 A; 4 pF capacitance; same Microsemi family but commercial-grade (non-Category 1 bond). | Lacks Category 1 metallurgical bond and triple-layer passivation; not qualified for MIL-PRF-19500/510. | Acceptable for industrial-grade systems where radiation hardness and 20-year life are not required. |
Compared with SMCJ12A and 1N6105A, the 1N8155US/TR uniquely combines 4 pF capacitance, Category 1 reliability qualification, and hermetic high-temp operation - making it the only option for mission-critical RF telemetry and avionics signal-line protection where both ESD immunity and long-term parameter stability are non-negotiable.
Availability
1N8155US/TR is available at Aetrix Electronics and suitable for RF transceiver front-end protection, avionics data bus interface, and downhole telemetry modem applications requiring stable component supply across extended temperature and radiation environments.
Supply support for 1N8155US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and radiation-hardened components for aerospace, defense, and industrial markets.
The 1N81xxUS series belongs to Microsemi's high-reliability transient suppression product line, engineered specifically for applications demanding hermetic sealing, extreme temperature resilience, and immunity to radiation and ESD - including satellite payloads, flight control systems, and oilfield instrumentation.
FAQ
What is the breakdown voltage range for the 1N8155US/TR?
The 1N8155US/TR has a minimum breakdown voltage (VBR) of 13.8 V and a maximum of 15.2 V at IBR = 1 mA, as specified in the Electrical Characteristics table on page 3 of the Microsemi T4-LDS-xxxx datasheet. This ensures predictable clamping onset above its 12.0 V working standoff voltage while accommodating process variation across production lots.
Is the 1N8155US/TR suitable for bidirectional transient protection?
No - the 1N8155US/TR is strictly unidirectional. For bidirectional protection, Microsemi recommends using two 1N8155US/TR devices in anti-parallel configuration (per Figure 5), which doubles the effective capacitance to 8 pF. This approach preserves low-capacitance performance while enabling symmetrical clamping on both polarities.
Does the 1N8155US/TR meet IEC61000-4-2 and IEC61000-4-4 standards?
Yes - the 1N8155US/TR is explicitly rated for ESD protection per IEC61000-4-2 Level 4 (±15 kV air, ±8 kV contact) and EFT protection per IEC61000-4-4 (40 A, 5/50 ns), as stated in the Applications/Benefits section on page 1 of the datasheet. Its 4 pF capacitance and fast response ensure compliance without external filtering.
What is the thermal resistance and how does it affect PCB layout for the 1N8155US/TR?
The 1N8155US/TR has a junction-to-ambient thermal resistance (RθJA) of 150 °C/W. To maintain safe operation under repeated 150 W pulses, PCB layout must provide adequate copper area and thermal vias near the axial leads. Derating begins above 25 °C ambient, per Figure 3; at 100 °C ambient, maximum sustainable PPP drops to ~75 W.
How is the cathode identified on the 1N8155US/TR package?
The cathode of the 1N8155US/TR is marked by a distinct painted band on the glass body, consistent with industry-standard diode polarity marking. This band must be oriented toward the system ground or low-impedance return path to ensure proper unidirectional clamping behavior - reverse orientation would cause forward conduction and potential failure during normal operation.
1N8155US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 12V
- Voltage - Breakdown (Min):
- 13.8V
- Voltage - Clamping (Max) @ Ipp:
- 20.2V
- Current - Peak Pulse (10/1000µs):
- 7.42A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8155US/TR FAQ
1.How can I place an order for 1N8155US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8155US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8155US/TR reliable?
The price and inventory of 1N8155US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8155US/TR is usually 5 days.
3.What payment methods are accepted for 1N8155US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8155US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N8155US/TR?
1N8155US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8155US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8155US/TR?
For technical support, including 1N8155US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8155US/TR requirements.
6.How does Aetrix verify that 1N8155US/TR is sourced from the original manufacturer or authorized distributors?
All 1N8155US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8155US/TR meets industry standards.
7.What is the process for return or replacement of 1N8155US/TR?
All 1N8155US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8155US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8155US/TR part is unused and in its original packaging.
Return procedure for 1N8155US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8155US/TR Tags
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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