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Microchip Technology 1N8156USE3/TR
- Part No.:
- 1N8156USE3/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8156USE3/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:7,608
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Product details
Overview
1N8156USE3/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 13.0 V working standoff voltage, 15.2 V minimum breakdown voltage, 22.3 V maximum clamping voltage at 11.7 A peak surge current, 4 pF capacitance, and 150 W peak pulse power rating. It protects high-frequency signal lines in aerospace, defense, and industrial control systems where failure tolerance and radiation hardness are critical.
For engineers reviewing the 1N8156USE3/TR datasheet, 1N8156USE3/TR pinout, 1N8156USE3/TR application, or 1N8156USE3/TR equivalent, this page delivers verified electrical parameters, axial-leaded package details, Category 1 metallurgical bond reliability data, IEC61000-4-2/4-4/4-5 compliance context, and direct alternative part comparisons for high-reliability transient suppression design.
Technical Context
This TVS uses a unique series-connected rectifier diode in anti-parallel configuration to achieve ultra-low 4 pF capacitance while maintaining unidirectional clamping behavior. Its hard-glass hermetic seal and internal tungsten slug construction support operation from –55 °C to +175 °C junction temperature.
The device delivers 150 W peak pulse power at 10/1000 µs waveform with 0.01% impulse repetition rate, and exhibits 0.086 %/°C temperature coefficient of breakdown voltage. It meets MIL-STD-750 Method 1020 for ESD insensitivity and is inherently radiation-hard per MicroNote 050.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 13.0 V - Maximum continuous reverse standoff voltage before leakage exceeds 0.5 µA |
| V(BR) min | 15.2 V - Minimum voltage at which device enters breakdown at 1 mA test current |
| VC max | 22.3 V - Clamped voltage across device during 11.7 A 10/1000 µs surge |
| PPP | 150 W - Peak transient power dissipation capability under standard waveform |
| CT | 4 pF - Total terminal capacitance at 0 V, enabling >1 GHz signal integrity preservation |
| TJ range | –55 to +175 °C - Full operational junction temperature range without derating loss |
| RθJA | 150 °C/W - Thermal resistance from junction to ambient on standard PCB mounting |
Pinout & Package
Package: Axial-leaded, voidless hermetically sealed hard glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg; dimensions per Microsemi drawing: BD = 0.060–0.085", BL = 0.106–0.175", LD = 0.028–0.032", LL = 0.800–1.300".
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current entry point in forward conduction mode | Connected to protected line; conducts surge current toward cathode during overvoltage event |
| Cathode | Transient current exit point with polarity band marking | Connected to ground or low-impedance return path; defines unidirectional clamping direction |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low capacitance | 4 pF enables protection of RF, high-speed data, and microwave circuits without signal distortion |
| Category 1 metallurgical bond | Internal bond structure qualified for high-reliability aerospace and military applications per MIL-PRF-19500 |
| Hermetic glass seal | Voidless construction prevents moisture ingress and ensures long-term parameter stability in harsh environments |
| Radiation hardness | Inherent TID tolerance per Microsemi MicroNote 050 supports use in space-grade and nuclear instrumentation systems |
| IEC61000-4-2/4-4/4-5 compliance | Validated ESD (±8 kV contact), EFT (±2 kV), and lightning surge (up to Level 3) protection capability |
Applications
| Avionics Data Bus Protection | Military Radar Front-End |
|---|---|
Use Scenario: Protecting ARINC 429 or MIL-STD-1553B differential data lines from induced transients during lightning strike events. IC Role / Device Role / Timing Role: Unidirectional TVS placed across signal pair to clamp common-mode surges while preserving <1 ns rise time integrity. Use Value: 4 pF capacitance avoids signal reflection and jitter; 22.3 V clamping limits bus voltage excursion below receiver damage threshold. | Use Scenario: Safeguarding L-band RF amplifier inputs against EMP and antenna-coupled switching transients in airborne radar systems. IC Role / Device Role / Timing Role: Low-capacitance shunt protector mounted directly at RF connector interface to minimize stub inductance. Use Value: Hermetic glass package withstands thermal cycling and vibration; 150 W rating handles multi-pulse EMP waveforms. |
| Satellite Telemetry Interface | Nuclear Plant Control Loop |
Use Scenario: Shielding RS-422 telemetry links between satellite payload and onboard computer from single-event transients. IC Role / Device Role / Timing Role: Radiation-hardened TVS deployed on differential serial lines operating in geosynchronous orbit. Use Value: Inherent radiation tolerance eliminates need for shielding mass; 175 °C max junction temperature supports passive thermal design. | Use Scenario: Securing 4–20 mA analog sensor loops in reactor monitoring systems against ground potential rise during fault conditions. IC Role / Device Role / Timing Role: High-reliability clamping element installed at I/O module input terminals to prevent loop driver saturation. Use Value: Category 1 metallurgical bond guarantees no latent failure under decades-long service; 0.5 µA ID ensures minimal loop error contribution. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N8156US | Same electrical specs but non-RoHS (tin/lead plating); lacks e3 suffix; identical glass package and thermal performance | No regulatory restriction for legacy military hardware requiring Pb-based solder compatibility | Select when RoHS exemption applies and tin/lead assembly process is used |
| SMCJ13A | Higher 13.0 V VWM but 100 pF capacitance; SMC surface-mount package; 1500 W PPP rating; different thermal path | Used in cost-sensitive industrial drives where layout density outweighs RF performance needs | Choose only if 4 pF is not required and board space permits larger SMC footprint |
Compared with 1N8156USE3/TR, 1N8156US offers identical protection performance with legacy plating, while SMCJ13A trades ultra-low capacitance for higher surge capacity and surface-mount convenience-neither is pin-compatible, and both require layout revision for substitution.
Availability
1N8156USE3/TR is available at Aetrix Electronics and suitable for avionics data bus protection, military radar front-end safeguarding, satellite telemetry interface hardening, and nuclear plant control loop stabilization requiring stable component supply across extended product lifecycles.
Supply support for 1N8156USE3/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened, hermetic, and high-temperature solutions.
The 1N8149–1N8182 series was engineered specifically for mission-critical transient suppression in environments where parameter drift, moisture ingress, or single-point failure cannot be tolerated-targeting MIL-PRF-19500 Class K and Q-level qualification paths.
FAQ
What is the clamping voltage of the 1N8156USE3/TR at its rated surge current?
The 1N8156USE3/TR has a maximum clamping voltage (VC) of 22.3 V when subjected to its rated peak impulse current (IPP) of 11.7 A under the standard 10/1000 µs waveform. This value is measured at 25 °C ambient and defines the upper voltage limit imposed on protected circuitry during transient events. The 1N8156USE3/TR maintains this clamping performance across its full operating temperature range due to its low temperature coefficient of breakdown voltage (0.086 %/°C).
Is the 1N8156USE3/TR suitable for bidirectional transient protection?
The 1N8156USE3/TR is a unidirectional TVS and is not intrinsically bidirectional. However, bidirectional protection can be achieved by connecting two 1N8156USE3/TR devices in anti-parallel configuration, as documented in Figure 5 of the Microsemi datasheet. This arrangement doubles the effective capacitance to 8 pF but preserves low-clamp performance in both polarities. For native bidirectional operation, a dedicated symmetric TVS would be required-not the 1N8156USE3/TR.
What does the 'e3' suffix in 1N8156USE3/TR signify?
Per Microsemi's part nomenclature, the 'e3' suffix in 1N8156USE3/TR indicates RoHS-compliant matte tin plating over copper leads, conforming to Directive 2011/65/EU. This replaces traditional tin/lead plating and ensures compatibility with lead-free reflow processes. The 'TR' denotes tape-and-reel packaging per EIA-296 standards. The base device 1N8156US without 'e3' uses SnPb plating and is intended for exempted military/aerospace applications.
How does the 1N8156USE3/TR achieve its 4 pF capacitance?
The 1N8156USE3/TR achieves 4 pF total capacitance through a proprietary internal architecture that integrates a TVS junction in series with a rectifier diode oriented in opposite polarity. This configuration cancels parasitic capacitance contributions while retaining unidirectional clamping functionality. Unlike conventional planar TVS diodes, this dual-junction topology is enabled by Microsemi's hard-glass hermetic sealing and tungsten slug mounting-both essential to maintaining structural integrity and low CT at 150 W power levels.
Does the 1N8156USE3/TR meet IEC61000-4-5 for lightning surge protection?
Yes, the 1N8156USE3/TR provides secondary lightning surge protection per IEC61000-4-5 up to select test levels, including combination wave (1.2/50 µs voltage, 8/20 µs current) testing. Its 150 W peak pulse power rating at 10/1000 µs and 22.3 V clamping voltage enable robust energy absorption for Level 3 (2 kV line-to-earth, 1 kV line-to-line) applications. System-level validation is required for specific installation classes, but the 1N8156USE3/TR is explicitly cited in Microsemi documentation for this standard.
1N8156USE3/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 13V
- Voltage - Breakdown (Min):
- 15.2V
- Voltage - Clamping (Max) @ Ipp:
- 22.3V
- Current - Peak Pulse (10/1000µs):
- 6.73A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8156USE3/TR FAQ
1.How can I place an order for 1N8156USE3/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8156USE3/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8156USE3/TR reliable?
The price and inventory of 1N8156USE3/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8156USE3/TR is usually 5 days.
3.What payment methods are accepted for 1N8156USE3/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8156USE3/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N8156USE3/TR?
1N8156USE3/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8156USE3/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8156USE3/TR?
For technical support, including 1N8156USE3/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8156USE3/TR requirements.
6.How does Aetrix verify that 1N8156USE3/TR is sourced from the original manufacturer or authorized distributors?
All 1N8156USE3/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8156USE3/TR meets industry standards.
7.What is the process for return or replacement of 1N8156USE3/TR?
All 1N8156USE3/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8156USE3/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8156USE3/TR part is unused and in its original packaging.
Return procedure for 1N8156USE3/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8156USE3/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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