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Microchip Technology 1N8157USE3/TR
- Part No.:
- 1N8157USE3/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8157USE3/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:4,625
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Product details
Overview
1N8157USE3/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, features 4 pF capacitance, and has a 15.0 V working standoff voltage (VWM) with 25.1 V clamping voltage (VC) at 11.7 A IPP - ideal for ESD/EFT protection in aerospace data links and MIL-STD-750-compliant systems.
For engineers reviewing the 1N8157USE3/TR datasheet, 1N8157USE3/TR pinout, 1N8157USE3/TR application, or 1N8157USE3/TR equivalent, key selection criteria include low-capacitance transient suppression, Category 1 metallurgical bond reliability, hermetic glass packaging, RoHS-compliant e3 marking, and axial-leaded through-hole mounting compatibility with MIL-STD-750 Class 1 ESD tolerance.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration to achieve ultra-low 4 pF capacitance while maintaining unidirectional clamping behavior. Its hard-glass hermetic construction ensures zero internal voids and supports operation from –55 °C to +175 °C junction temperature.
The device uses internal tungsten slugs and Category 1 metallurgical bonds for radiation hardness per MicroNote 050 and robust surge handling. It meets IEC61000-4-2 (ESD), IEC61000-4-4 (EFT), and select IEC61000-4-5 (lightning) immunity requirements without derating up to 25 °C ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 15.0 V - Maximum continuous reverse-bias voltage before conduction; sets operating margin for protected signal lines. |
| VC @ IPP | 25.1 V at 11.7 A - Clamping voltage during 10/1000 µs surge; defines worst-case overvoltage seen by downstream ICs. |
| PPP | 150 W - Peak pulse power rating at 25 °C; determines survivability against lightning-induced transients. |
| CT | 4 pF - Total capacitance at 0 V; enables use on >1 GHz RF/data lines without signal integrity degradation. |
| TJ Range | –55 °C to +175 °C - Full military-grade junction temperature range; supports engine bay, avionics, and space-qualified designs. |
| ID @ VWM | 0.5 µA - Standby leakage current; ensures minimal DC loading on high-impedance sensor or reference circuits. |
| RθJA | 150 °C/W - Thermal resistance junction-to-ambient; requires adequate PCB copper area for sustained 1.0 W average power dissipation. |
Pinout & Package
Package: Axial-leaded hermetically sealed hard-glass case with tungsten slugs and cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg; dimensions per Microsemi T4-LDS-xxxx (BD: 0.060–0.085", LL: 0.800–1.300").
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive terminal under forward bias | Connected to protected circuit ground or low-side return path; must be routed with controlled impedance for RF applications. |
| Cathode | Negative terminal; marked with band | Connected to protected signal line or power rail; clamps transients toward ground when voltage exceeds VWM. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination risk - critical for 20+ year field life in sealed avionics enclosures. |
| Category 1 metallurgical bond | Meets MIL-PRF-19500/507 reliability standard; validated for high-vibration, thermal-cycling, and radiation environments. |
| 4 pF capacitance | Enables direct placement on USB 3.0, HDMI, or radar IF lines without equalization or bandwidth compensation. |
| 150 W 10/1000 µs rating | Sustains repeated lightning surges per IEC61000-4-5 Level 3 (1 kV line-earth) without parameter shift or failure. |
| e3 RoHS compliance | Lead-free matte tin plating compatible with Pb-free reflow profiles and exempt from EU RoHS exemptions 7a/7c. |
Applications
| Aerospace Data Bus Protection | MIL-STD-1553B Transceiver Interface |
|---|---|
|
Use Scenario: Protecting bidirectional Manchester-encoded data lines in flight control computers against induced lightning transients. IC Role / Device Role / Timing Role: Unidirectional TVS placed between transceiver I/O and connector, clamping common-mode surges to ground. Use Value: 4 pF capacitance prevents bit error rate degradation at 1 Mbps; 150 W rating withstands DO-160 Section 22 Level 4 induced surge testing. |
Use Scenario: Shielding 1553B bus couplers from ESD events during maintenance and connector mating cycles. IC Role / Device Role / Timing Role: Low-leakage (0.5 µA) TVS mounted directly at bus connector pins to limit voltage overshoot without loading stub impedance. Use Value: Sub-1 µA ID ensures <1 mV offset on 1553B differential receivers; hermetic seal prevents corrosion in humid hangar environments. |
| High-Frequency Radar Front-End | Spacecraft Power Distribution Monitoring |
|
Use Scenario: Guarding L-band RF receiver inputs against antenna-coupled ESD during ground handling. IC Role / Device Role / Timing Role: Series-mounted TVS on RF trace prior to low-noise amplifier input, referenced to chassis ground. Use Value: 4 pF capacitance preserves S21 > –0.5 dB up to 2 GHz; radiation-hardened construction avoids latch-up in LEO orbit. |
Use Scenario: Protecting isolated ADC inputs measuring 28 VDC bus voltage in satellite power management units. IC Role / Device Role / Timing Role: TVS placed across ADC input resistor divider to clamp transients without affecting 16-bit measurement accuracy. Use Value: 15.0 V VWM aligns precisely with 28 V ±10% bus range; 175 °C max TJ supports operation near power converters. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ15A | Surface-mount DO-214AB package; 22.5 V VC @ 12.1 A; 1700 pF typical capacitance. | Not suitable for >100 MHz signal paths due to 100× higher capacitance; better for power rail clamping. | Select only if board space constraints prohibit axial-leaded devices and RF performance is not required. |
| 1N6105A | Same axial-glass package but non-hermetic; 1000 pF capacitance; no Category 1 bond or radiation hardness. | Lacks MIL-STD-750 ESD tolerance and voidless seal; limited to commercial-grade industrial use. | Acceptable for cost-sensitive terrestrial telecom where long-term hermeticity and radiation immunity are not mandated. |
Compared with SMCJ15A and 1N6105A, the 1N8157USE3/TR uniquely combines sub-5 pF capacitance, hermetic reliability, and military-grade thermal/radiation specs - making it irreplaceable for RF front-end and space-qualified transient protection where signal fidelity and 20-year life are non-negotiable.
Availability
1N8157USE3/TR is available at Aetrix Electronics and suitable for aerospace data bus protection, MIL-STD-1553B interface hardening, and high-frequency radar front-end shielding requiring stable component supply across extended production lifecycles.
Supply support for 1N8157USE3/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog, RF, and radiation-hardened components for defense, aerospace, and industrial markets.
The 1N8157USE3/TR belongs to Microsemi's legacy "LDS" series of hermetic TVS diodes, engineered specifically for mission-critical transient suppression in environments where failure is not an option - including launch vehicles, avionics, and nuclear instrumentation.
FAQ
What is the clamping voltage of the 1N8157USE3/TR under a 10/1000 µs surge?
The 1N8157USE3/TR exhibits a maximum clamping voltage (VC) of 25.1 V when subjected to its rated peak impulse current (IPP) of 11.7 A under the standardized 10/1000 µs waveform. This value is guaranteed per Microsemi's T4-LDS-xxxx specification sheet and defines the upper voltage limit imposed on protected circuitry during transient events.
Is the 1N8157USE3/TR suitable for bidirectional signal line protection?
The 1N8157USE3/TR is inherently unidirectional. For bidirectional protection, two 1N8157USE3/TR devices must be connected in anti-parallel - as documented in Figure 5 of the datasheet - resulting in double the capacitance (8 pF) but full symmetrical clamping capability across both polarities.
Does the 1N8157USE3/TR meet MIL-STD-750 ESD test requirements?
Yes, the 1N8157USE3/TR is explicitly rated as nonsensitive to ESD per MIL-STD-750 Method 1020, confirmed in the Applications/Benefits section of the datasheet. Its hermetic construction and Category 1 metallurgical bonds contribute to this robustness, making it suitable for handling in non-EPA environments.
What does the "e3" suffix in 1N8157USE3/TR signify?
Per Microsemi's nomenclature guide, the "e3" suffix in 1N8157USE3/TR indicates RoHS-compliant matte tin plating on the axial leads. This plating meets JEDEC J-STD-609A Class 3 requirements and is compatible with lead-free soldering processes without compromising bond integrity or thermal cycling performance.
Can the 1N8157USE3/TR be used in high-temperature environments like engine control units?
Yes, the 1N8157USE3/TR supports a junction temperature range of –55 °C to +175 °C and is qualified for high-reliability automotive and aerospace applications. Its hard-glass hermetic package and tungsten slug construction enable stable operation in under-hood ECUs when mounted with appropriate thermal relief and derated per Figure 3's ambient temperature curve.
1N8157USE3/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 15V
- Voltage - Breakdown (Min):
- 17.1V
- Voltage - Clamping (Max) @ Ipp:
- 25.1V
- Current - Peak Pulse (10/1000µs):
- 5.98A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8157USE3/TR FAQ
1.How can I place an order for 1N8157USE3/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8157USE3/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8157USE3/TR reliable?
The price and inventory of 1N8157USE3/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8157USE3/TR is usually 5 days.
3.What payment methods are accepted for 1N8157USE3/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8157USE3/TR transactions.
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4.How is shipping managed for 1N8157USE3/TR?
1N8157USE3/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8157USE3/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8157USE3/TR?
For technical support, including 1N8157USE3/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8157USE3/TR requirements.
6.How does Aetrix verify that 1N8157USE3/TR is sourced from the original manufacturer or authorized distributors?
All 1N8157USE3/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8157USE3/TR meets industry standards.
7.What is the process for return or replacement of 1N8157USE3/TR?
All 1N8157USE3/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8157USE3/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8157USE3/TR part is unused and in its original packaging.
Return procedure for 1N8157USE3/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8157USE3/TR Tags
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