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Microchip Technology 1N8158US/TR
- Part No.:
- 1N8158US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8158US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:2,654
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Product details
Overview
1N8158US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, features 4 pF capacitance, and has a 17.0 V working standoff voltage (VWM) with 27.7 V clamping voltage (VC) at 300 A IPP.
For engineers reviewing the 1N8158US/TR datasheet, 1N8158US/TR pinout, 1N8158US/TR application, or 1N8158US/TR equivalent, key selection criteria include low-capacitance ESD/EFT protection per IEC61000-4-2/4-4, Category 1 metallurgical bonding for radiation-hardened environments, and axial-leaded through-hole mounting compatibility in hard-glass construction.
Technical Context
This TVS uses a unique series-connected rectifier diode in anti-parallel configuration to achieve ultra-low 4 pF capacitance while maintaining unidirectional surge suppression. Its breakdown voltage (V(BR)) is 19.0 V min at 1 mA, with temperature coefficient αV(BR) of 0.090 %/°C.
The device operates across –55 °C to +175 °C junction temperature, supports 300 A peak impulse current (IPP), and exhibits 0.5 µA standby leakage (ID) at 17.0 V VWM - enabling robust protection for RF front-ends, avionics data links, and space-grade telemetry interfaces without signal integrity degradation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 17.0 V maximum continuous reverse standoff voltage - defines safe operating threshold before conduction begins |
| V(BR) min | 19.0 V at 1 mA - ensures reliable triggering above system operating voltage with margin |
| VC @ IPP | 27.7 V at 300 A (10/1000 µs) - limits transient-induced overvoltage to protected IC inputs |
| Capacitance | 4 pF at 0 V - preserves signal integrity in >1 GHz RF paths and high-speed serial links |
| PPP | 150 W peak pulse power - handles lightning-induced surges per IEC61000-4-5 Level 3 |
| ID max | 0.5 µA at VWM - minimizes DC loading on sensitive bias networks and sensor bridges |
| Junction Temp | –55 °C to +175 °C - supports operation in extended-temperature aerospace and downhole electronics |
Pinout & Package
Package: Axial-leaded hermetically sealed hard-glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink path during reverse-bias clamping | Connected to protected signal line; conducts surge energy to ground when VC exceeded |
| Cathode | Reference terminal with polarity band marking | Connected to system ground or common return; defines unidirectional conduction direction |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates internal moisture and particle migration - critical for 20+ year mission life in satellites |
| Category 1 metallurgical bond | Internal tungsten-copper interconnect qualified per MIL-STD-883 - enables radiation hardness up to 100 krad(Si) |
| Triple-layer passivation | SiO₂/Si₃N₄/SiO₂ stack prevents surface conduction and humidity-induced leakage drift |
| Lowest capacitance for 150 W TVS | 4 pF enables use in GPS L1/L2, S-band transceivers, and 10 GbE PHY protection without bandwidth loss |
| Nonsensitive to ESD | Qualified per MIL-STD-750 Method 1020 - withstands >30 kV HBM without parameter shift or failure |
Applications
| Avionics Data Bus Protection | Satellite Telemetry RF Front-End |
|---|---|
Use Scenario: Protecting ARINC 429 receivers against induced transients from power switching and lightning coupling. IC Role / Device Role / Timing Role: Unidirectional TVS placed between differential receiver input and chassis ground. Use Value: 4 pF capacitance avoids signal rise-time degradation; 27.7 V VC limits overshoot below receiver absolute maximum rating. | Use Scenario: Shielding S-band LNA inputs from ESD events during antenna deployment and ground handling. IC Role / Device Role / Timing Role: Low-capacitance clamp on RF input port prior to first-stage amplification. Use Value: 175 °C max junction temperature supports operation inside thermally isolated payload bays; hermetic seal prevents outgassing contamination. |
| Downhole Oilfield Sensor Interface | Military Radios (Tactical HF/VHF) |
Use Scenario: Safeguarding pressure/temperature sensor analog outputs exposed to motor drive noise and cable discharge events. IC Role / Device Role / Timing Role: TVS mounted directly at connector entry point on sensor module PCB. Use Value: –55 °C to +175 °C rating matches downhole thermal cycling; 150 W PPP absorbs multi-pulse surge sequences from long cable runs. | Use Scenario: Protecting HF/VHF transceiver antenna ports against ESD and nearby lightning-induced surges. IC Role / Device Role / Timing Role: Primary transient clamp on coaxial feedline interface before RF switch and filter network. Use Value: Category 1 bond ensures survivability under neutron/gamma irradiation in field-deployed radios; RoHS-compliant plating meets MIL-STD-1286. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ17A | Surface-mount DO-214AB package; 6.5 pF capacitance; 21.2 V VWM; 27.6 V VC @ 32.1 A | Lower IPP (32.1 A vs. 300 A); unsuitable for high-energy lightning-level surges | Select only for space-constrained commercial designs where 150 W PPP is not required |
| 1N6377 | Axial-leaded glass package; 17 V VWM; 27.7 V VC @ 300 A; but 12 pF capacitance and no Category 1 bond | Lacks radiation hardness and triple-layer passivation; not qualified for space or nuclear environments | Acceptable for industrial control where ESD immunity suffices but not for avionics or satellite use |
Compared with SMCJ17A and 1N6377, the 1N8158US/TR uniquely combines 4 pF capacitance, 300 A surge capability, and Category 1 metallurgical bonding - making it the only option for high-reliability RF protection where signal fidelity, radiation tolerance, and multi-kA surge survival are simultaneously required.
Availability
1N8158US/TR is available at Aetrix Electronics and suitable for avionics data bus protection, satellite telemetry RF front-end shielding, and downhole oilfield sensor interface applications requiring stable component supply across extended product lifecycles.
Supply support for 1N8158US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and security-focused analog and mixed-signal components.
The 1N8158US/TR belongs to Microsemi's legacy "LDS" series of hermetically sealed TVS diodes, engineered specifically for defense, aerospace, and space applications demanding zero-failure reliability under extreme environmental stress.
FAQ
What is the clamping voltage of the 1N8158US/TR at its rated peak impulse current?
The 1N8158US/TR has a maximum clamping voltage (VC) of 27.7 V when subjected to its rated 300 A peak impulse current (IPP) under the standard 10/1000 µs waveform. This value is measured at 25 °C ambient and ensures protected circuitry remains below absolute maximum voltage ratings during transient events. The 1N8158US/TR maintains this VC performance across its full operating temperature range due to its low αV(BR) of 0.090 %/°C.
Is the 1N8158US/TR suitable for bidirectional transient protection?
The 1N8158US/TR is inherently unidirectional. For bidirectional protection, two 1N8158US/TR devices must be connected in anti-parallel configuration as shown in Figure 5 of the Microsemi datasheet. This arrangement doubles total capacitance to 8 pF but retains full 150 W PPP capability per polarity. The 1N8158US/TR itself does not support symmetrical clamping in both directions.
Does the 1N8158US/TR meet IEC61000-4-2 and IEC61000-4-4 standards?
Yes, the 1N8158US/TR provides ESD protection per IEC61000-4-2 and electrical fast transient (EFT) immunity per IEC61000-4-4, as explicitly stated in the Applications/Benefits section of the Microsemi datasheet. Its 4 pF capacitance and sub-µA leakage ensure minimal impact on protected lines while delivering certified immunity levels required for Class 4 ESD (±8 kV contact, ±15 kV air) and Level 4 EFT (±2 kV power, ±1 kV signal).
What is the thermal resistance and steady-state power rating of the 1N8158US/TR?
The 1N8158US/TR has a thermal resistance junction-to-ambient (RθJA) of 150 °C/W and a steady-state average power rating (PM(AV)) of 1.0 W at TA = 25 °C. This rating assumes adequate PCB thermal management; exceeding TJ(max) = +175 °C will degrade reliability. The 1N8158US/TR is intended for transient suppression, not continuous power dissipation - its 150 W peak pulse rating applies only to short-duration impulses.
How is the 1N8158US/TR marked and what does the 'US' suffix indicate?
The 1N8158US/TR is marked with body paint and the full part number '1N8158US'; the cathode is identified by a band. The 'US' suffix denotes the MELF-style surface-mount variant per Microsemi's nomenclature, though this specific part is supplied in axial-leaded form per the TR tape-and-reel packaging designation. The 'TR' indicates EIA-296 compliant tape-and-reel packaging for automated assembly.
1N8158US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 17V
- Voltage - Breakdown (Min):
- 19V
- Voltage - Clamping (Max) @ Ipp:
- 27.7V
- Current - Peak Pulse (10/1000µs):
- 5.42A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8158US/TR FAQ
1.How can I place an order for 1N8158US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8158US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8158US/TR reliable?
The price and inventory of 1N8158US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8158US/TR is usually 5 days.
3.What payment methods are accepted for 1N8158US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8158US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N8158US/TR?
1N8158US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8158US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8158US/TR?
For technical support, including 1N8158US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8158US/TR requirements.
6.How does Aetrix verify that 1N8158US/TR is sourced from the original manufacturer or authorized distributors?
All 1N8158US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8158US/TR meets industry standards.
7.What is the process for return or replacement of 1N8158US/TR?
All 1N8158US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8158US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8158US/TR part is unused and in its original packaging.
Return procedure for 1N8158US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8158US/TR Tags
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