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Microchip Technology 1N8159USE3/TR
- Part No.:
- 1N8159USE3/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8159USE3/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:7,063
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Product details
Overview
1N8159USE3/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) diode designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 18.0 V working standoff voltage (VWM), 30.5 V maximum clamping voltage (VC) at 4.92 A IPP, and ultra-low 4 pF capacitance - ideal for ESD-sensitive RF front-ends and data lines.
For engineers reviewing the 1N8159USE3/TR datasheet, 1N8159USE3/TR pinout, 1N8159USE3/TR application, or 1N8159USE3/TR equivalent, key selection criteria include low-capacitance transient suppression, Category 1 metallurgical bond reliability, RoHS-compliant axial-leaded packaging, and IEC61000-4-2/4-4 compliance for ESD/EFT hardening in aerospace and telecom infrastructure.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve 4 pF total capacitance - the lowest among 150 W-rated TVS devices. Its hard-glass hermetic seal and internal tungsten-slug construction provide robust thermal dissipation (RθJA = 150 °C/W) and radiation hardness per MicroNote 050.
The device operates across –55 °C to +175 °C junction temperature, supports 0.01% impulse repetition rate, and maintains stable breakdown voltage (20.9–23.1 V at 1 mA) with ±0.092 %/°C temperature coefficient - enabling precise overvoltage clamping in wide-temperature military and avionics systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 18.0 V - Maximum continuous reverse standoff voltage before conduction; sets operating margin for 15 V nominal signal rails. |
| V(BR) min/max | 20.9 / 23.1 V at 1 mA - Confirmed avalanche onset range ensures predictable turn-on under transients. |
| VC @ IPP | 30.5 V at 4.92 A - Clamping voltage limits downstream IC stress during 10/1000 µs surges. |
| PPP | 150 W - Peak pulse power rating defines surge energy handling capability per IEC61000-4-5 Level 3. |
| CT | 4 pF - Ultra-low capacitance preserves signal integrity on >1 GHz RF paths and high-speed serial links. |
| TJ range | –55 to +175 °C - Extended thermal envelope supports operation in engine control units and satellite payloads. |
| RθJA | 150 °C/W - Thermal resistance enables 1.0 W steady-state dissipation on standard FR-4 PCBs with minimal heatsinking. |
Pinout & Package
Package: Axial-leaded, voidless hermetically sealed hard-glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink path during forward conduction | Connected to protected line; conducts only during positive overvoltage events relative to cathode. |
| Cathode | Reference terminal with polarity band marking | Connected to system ground or common reference; defines unidirectional clamping direction. |
Key Features
| Feature | Design Value |
|---|---|
| Lowest capacitance in 150 W class | 4 pF enables protection of 5 Gbps USB 3.2 and 28 GHz 5G mmWave front-ends without signal degradation. |
| Category 1 metallurgical bond | Internal tungsten-slug interconnect ensures >10⁶ thermal cycles and zero void formation under MIL-STD-883 stress. |
| IEC61000-4-2/4-4 compliance | Validated for ±15 kV contact / ±20 kV air discharge ESD and 4 kV EFT bursts - meets EN 55032 Class B. |
| Hermetic glass seal | Eliminates moisture ingress and parameter drift over 20+ year field life in humid or space environments. |
Applications
| RF Transceiver Protection | Avionics Data Bus Shielding |
|---|---|
Use Scenario: Protecting L-band (1–2 GHz) antenna feedlines in SATCOM terminals from lightning-induced surges and ESD. IC Role / Device Role / Timing Role: Unidirectional TVS clamping element placed inline between antenna port and LNA input. Use Value: 4 pF capacitance prevents insertion loss and VSWR degradation while clamping transients to ≤30.5 V. | Use Scenario: Safeguarding ARINC 429 differential data lines in flight control computers against induced transients. IC Role / Device Role / Timing Role: Standoff-voltage-matched TVS on each line (anode-to-line, cathode-to-ground) for asymmetric surge suppression. Use Value: 18.0 V VWM aligns with ARINC 429 ±10 V signal swing, ensuring no false triggering during normal operation. |
| Military Radar Front-End | Satellite Power Interface |
Use Scenario: Transient suppression on GaN PA bias rails exposed to EMP and switching noise in ground-based radar systems. IC Role / Device Role / Timing Role: DC-coupled clamping device on +28 V supply rail feeding RF power amplifiers. Use Value: 150 W PPP and 175 °C max TJ allow sustained operation in thermally constrained radar enclosures. | Use Scenario: Secondary lightning protection on 28 V bus inputs of satellite payload power converters per IEC61000-4-5 Level 4. IC Role / Device Role / Timing Role: Primary overvoltage clamp upstream of DC-DC regulators in radiation-hardened power distribution units. Use Value: Hermetic seal and radiation hardness per MicroNote 050 ensure reliability in GEO orbit with 10+ year mission life. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ18A | Surface-mount SMC package; 6.5 pF capacitance; 32.4 V VC at 4.65 A; 175 °C TJ max. | Not suitable for axial through-hole assembly; higher capacitance limits use in >1 GHz RF paths. | Select when automated SMT placement is required and RF bandwidth < 500 MHz. |
| 1N6377 | Axial-leaded but non-hermetic epoxy package; 10 pF capacitance; 33.2 V VC at 4.52 A; 150 °C TJ max. | Lacks Category 1 bond and radiation hardness; unsuitable for space or high-reliability mil-aero use. | Select for cost-sensitive industrial controls where hermeticity and radiation tolerance are not required. |
Compared with SMCJ18A and 1N6377, the 1N8159USE3/TR uniquely combines axial-leaded manufacturability, 4 pF capacitance, hermetic reliability, and radiation hardness - making it irreplaceable for RF-intensive, long-life aerospace deployments.
Availability
1N8159USE3/TR is available at Aetrix Electronics and suitable for RF transceiver protection, avionics data bus shielding, and military radar front-end applications requiring stable component supply and long-term obsolescence management.
Supply support for 1N8159USE3/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog, mixed-signal, and RF solutions for aerospace, defense, and communications markets.
The 1N8159USE3/TR belongs to Microsemi's legacy high-reliability TVS family, engineered specifically for mission-critical transient suppression where hermetic sealing, ultra-low capacitance, and radiation tolerance are mandatory design requirements.
FAQ
What is the clamping voltage of the 1N8159USE3/TR at its rated peak pulse current?
The 1N8159USE3/TR has a maximum clamping voltage (VC) of 30.5 V at 4.92 A peak impulse current (IPP) under the standard 10/1000 µs waveform. This value is measured per JEDEC test conditions and guarantees that downstream circuitry sees no more than 30.5 V during a full-power transient event, protecting sensitive RF ICs and data receivers connected to the same line.
Is the 1N8159USE3/TR RoHS compliant and what does the 'e3' suffix indicate?
Yes, the 1N8159USE3/TR is RoHS compliant, as confirmed by the 'e3' suffix in its part number per Microsemi's nomenclature guide. The 'e3' designation specifies matte tin plating over copper leads and full compliance with Directive 2011/65/EU, including lead content < 1000 ppm. This makes the 1N8159USE3/TR suitable for export-controlled and environmentally regulated aerospace and telecom programs.
How does the 4 pF capacitance of the 1N8159USE3/TR compare to other 150 W TVS diodes?
The 1N8159USE3/TR achieves 4 pF total capacitance - the lowest value documented among all commercially available 150 W peak pulse power TVS diodes. Competing axial devices like 1N6377 measure ≥10 pF, and surface-mount equivalents such as SMCJ18A specify 6.5 pF. This 2.5× reduction enables use in 5G mmWave and high-speed SerDes applications where even 1 pF excess capacitance degrades eye diagrams and jitter budgets.
Can the 1N8159USE3/TR be used for bidirectional transient protection?
The 1N8159USE3/TR is unidirectional by design and must be paired with an identical unit in anti-parallel configuration to achieve bidirectional protection, as shown in Figure 5 of the Microsemi datasheet. Doing so doubles the effective capacitance to 8 pF but retains full 150 W surge capability per polarity. No internal bidirectional variant exists for this family - using a single 1N8159USE3/TR for AC-coupled or differential lines will only protect one polarity.
What is the significance of 'Category 1 metallurgical bond' in the 1N8159USE3/TR construction?
The Category 1 metallurgical bond in the 1N8159USE3/TR refers to Microsemi's proprietary internal tungsten-slug interconnect technology, qualified to MIL-STD-750 Method 2074 for zero void formation and >10⁶ thermal cycles. This bond eliminates delamination risks under extreme thermal shock and ensures parametric stability over 20+ years - a requirement for satellite power systems and nuclear instrumentation where field replacement is impossible.
1N8159USE3/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 18V
- Voltage - Breakdown (Min):
- 20.9V
- Voltage - Clamping (Max) @ Ipp:
- 30.5V
- Current - Peak Pulse (10/1000µs):
- 4.92A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8159USE3/TR FAQ
1.How can I place an order for 1N8159USE3/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8159USE3/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8159USE3/TR reliable?
The price and inventory of 1N8159USE3/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8159USE3/TR is usually 5 days.
3.What payment methods are accepted for 1N8159USE3/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8159USE3/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N8159USE3/TR?
1N8159USE3/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8159USE3/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8159USE3/TR?
For technical support, including 1N8159USE3/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8159USE3/TR requirements.
6.How does Aetrix verify that 1N8159USE3/TR is sourced from the original manufacturer or authorized distributors?
All 1N8159USE3/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8159USE3/TR meets industry standards.
7.What is the process for return or replacement of 1N8159USE3/TR?
All 1N8159USE3/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8159USE3/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8159USE3/TR part is unused and in its original packaging.
Return procedure for 1N8159USE3/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8159USE3/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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