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Microchip Technology 1N8160USE3/TR
- Part No.:
- 1N8160USE3/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8160USE3/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:5,737
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Product details
Overview
1N8160USE3/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) diode with 20 V working standoff voltage (VWM), 33.3 V clamping voltage (VC) at 4.5 A peak impulse current, 4 pF capacitance, and 150 W peak pulse power rating. It uses a unique series-opposed rectifier configuration to achieve ultra-low capacitance for high-frequency signal line protection in aerospace, defense, and industrial control systems.
For engineers reviewing the 1N8160USE3/TR datasheet, 1N8160USE3/TR pinout, 1N8160USE3/TR application, or 1N8160USE3/TR equivalent, key selection criteria include low-capacitance ESD/IEC61000-4-2 protection, hermetic glass package reliability, Category 1 metallurgical bonding, axial-leaded through-hole mounting, and IEC61000-4-5 secondary lightning compliance.
Technical Context
This TVS employs a dual-element architecture: a primary avalanche diode in series with an opposing rectifier diode, enabling 4 pF total capacitance-lowest among 150 W-rated TVS devices. Its unidirectional operation provides precise cathode-to-anode standoff up to 20 V and clamps transients to ≤33.3 V at 4.5 A (10/1000 µs waveform).
Rated for -55 °C to +175 °C junction temperature, it features triple-layer passivation, voidless hard-glass encapsulation, and internal Category 1 metallurgical bonds per MIL-STD-750. It delivers ESD immunity per IEC61000-4-2 Level 4 (±15 kV contact) and EFT robustness per IEC61000-4-4.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 20 V - Maximum continuous reverse-biased operating voltage before breakdown; defines safe signal swing margin. |
| VC @ IPP=4.5 A | 33.3 V - Clamped voltage during 10/1000 µs surge; limits downstream IC stress to safe levels. |
| CT | 4 pF - Total terminal capacitance; enables use on >1 GHz RF lines and high-speed data buses without signal distortion. |
| PPP | 150 W - Peak pulse power handling at 25 °C; supports repeated lightning-induced surges per IEC61000-4-5. |
| TJ Range | -55 °C to +175 °C - Extended thermal operating envelope suitable for engine bay, avionics, and downhole electronics. |
| RθJA | 150 °C/W - Thermal resistance from junction to ambient; requires minimal PCB copper area for 1 W steady-state dissipation. |
| ID @ VWM | 0.5 µA - Standby leakage at rated standoff; negligible loading on high-impedance sensor or reference circuits. |
Pinout & Package
Package: Axial-leaded, voidless hermetically sealed hard-glass case with tungsten slugs; RoHS-compliant matte tin plating over copper leads; cathode band marking; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive terminal under forward bias; connected to protected line side | Accepts transient energy during reverse-biased clamping; must be routed with low-inductance trace to ground. |
| Cathode | Negative terminal; marked by band on glass body | Connected to system ground or low-impedance return path; determines unidirectional conduction direction. |
Key Features
| Feature | Design Value |
|---|---|
| Series-opposed diode architecture | Enables 4 pF capacitance-critical for preserving signal integrity on USB 3.0, HDMI, or RF front-end interfaces. |
| Category 1 metallurgical bond | Meets MIL-STD-750 Method 2029 for high-reliability applications including space-grade and airborne systems. |
| Voidless hermetic glass seal | Eliminates moisture ingress and long-term parameter drift; supports 20+ year field life in harsh environments. |
| Triple-layer passivation | Prevents surface leakage and corrosion under high humidity, salt fog, or chemical exposure conditions. |
Applications
| Avionics Data Bus Protection | Industrial Ethernet PHY Interface |
|---|---|
Use Scenario: Protecting ARINC 429 or MIL-STD-1553B differential data lines from induced lightning transients in aircraft wiring harnesses. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between bus line and chassis ground to limit common-mode surges without distorting 1 MHz signaling. Use Value: 4 pF capacitance avoids skew or attenuation of fast edge rates; 150 W rating handles IEC61000-4-5 Level 3 (2 kV line-to-ground) surges. | Use Scenario: Safeguarding 100BASE-TX or 1000BASE-T PHY transceivers against ESD events and switching noise in factory automation controllers. IC Role / Device Role / Timing Role: Line-side transient suppressor on each twisted pair, mounted directly at RJ45 connector entry point. Use Value: Sub-1 µA leakage preserves DC balance; 33.3 V clamping ensures PHY I/O remains within absolute maximum ratings during ±15 kV contact discharge. |
| Downhole Oilfield Sensor Interface | Military Radio Front-End Protection |
Use Scenario: Shielding pressure/temperature sensor analog outputs in borehole tools exposed to electrostatic discharge and cable discharge events. IC Role / Device Role / Timing Role: Low-leakage TVS on 4–20 mA loop or mV-level bridge output, placed before signal conditioning amplifier. Use Value: 0.5 µA standby current prevents offset error in precision instrumentation; hermetic seal withstands 175 °C downhole temperatures. | Use Scenario: Protecting HF/VHF receiver antenna inputs and transmitter output stages from nearby EMP and antenna-coupled transients. IC Role / Device Role / Timing Role: First-stage transient limiter before LNA or PA, minimizing insertion loss while maintaining RF bandwidth. Use Value: 4 pF capacitance preserves VSWR below 2.0 up to 500 MHz; 150 W rating absorbs multi-kA pulses from nearby lightning strikes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N8160US | Same electrical specs but non-RoHS (SnPb lead finish); no "e3" suffix; identical glass package and axial leads. | Approved for legacy military/aerospace programs requiring SnPb solder compatibility and JAN-class reliability screening. | Select 1N8160US only when RoHS exemption applies and SnPb assembly process is mandated. |
| SMBJ20A | Higher capacitance (150 pF), larger SMB package, lower thermal resistance (100 °C/W), same VWM/VC ratings. | Better suited for board space-constrained designs where capacitance <10 pF is not required; lacks hermetic seal and Category 1 bonding. | Choose SMBJ20A for cost-sensitive commercial applications; avoid where radiation hardness or 175 °C operation is needed. |
Compared with 1N8160USE3/TR, 1N8160US offers identical performance with SnPb leads for legacy reflow, while SMBJ20A trades hermetic reliability and ultra-low capacitance for surface-mount convenience and higher power density-making the former ideal for mission-critical analog/sensor protection and the latter for general-purpose digital I/O clamping.
Availability
1N8160USE3/TR is available at Aetrix Electronics and suitable for avionics data bus protection, industrial Ethernet PHY interface, and downhole oilfield sensor interface requiring stable component supply across extended temperature and high-reliability environments.
Supply support for 1N8160USE3/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and secure analog/mixed-signal solutions for aerospace, defense, and industrial markets.
The 1N81xx series was developed to deliver ultra-low-capacitance transient suppression for high-frequency analog and digital signal paths in safety-critical systems where failure is not an option.
FAQ
What is the clamping voltage of the 1N8160USE3/TR at its rated peak impulse current?
The 1N8160USE3/TR has a maximum clamping voltage (VC) of 33.3 V when subjected to a 4.5 A peak impulse current with a 10/1000 µs waveform. This value is guaranteed across the full operating temperature range and ensures protected circuitry remains within safe voltage limits during surge events. The 1N8160USE3/TR achieves this performance using its series-opposed diode structure, which maintains low dynamic impedance during conduction.
Is the 1N8160USE3/TR suitable for bidirectional transient protection?
No-the 1N8160USE3/TR is strictly unidirectional. For bidirectional protection, two 1N8160USE3/TR devices must be connected in anti-parallel configuration, as documented in Microsemi's Figure 5. This arrangement doubles the effective capacitance to 8 pF but retains the same clamping performance per polarity. The 1N8160USE3/TR itself conducts only in reverse breakdown mode and blocks forward current above its 20 V standoff rating.
Does the 1N8160USE3/TR meet IEC61000-4-2 and IEC61000-4-5 standards?
Yes-the 1N8160USE3/TR is specified for ESD protection per IEC61000-4-2 Level 4 (±15 kV contact discharge) and secondary lightning surge immunity per IEC61000-4-5 (2 kV line-to-ground, 10/1000 µs). Its 150 W peak pulse power rating and 33.3 V clamping voltage directly support compliance with these standards when properly implemented with low-inductance grounding. The 1N8160USE3/TR's hermetic construction further enhances long-term reliability under repeated stress.
What is the meaning of the "e3" suffix in 1N8160USE3/TR?
"e3" indicates RoHS-compliant matte tin plating on the axial leads of the 1N8160USE3/TR, per JEDEC Standard J-STD-609. It replaces traditional tin-lead (SnPb) finishes and ensures compliance with EU Directive 2011/65/EU. The "TR" denotes tape-and-reel packaging per EIA-296 standard. The 1N8160USE3/TR retains identical electrical and thermal specifications as non-RoHS variants-only the plating and packaging differ.
How does the 1N8160USE3/TR achieve its 4 pF capacitance?
The 1N8160USE3/TR achieves 4 pF total capacitance via a patented internal architecture: a primary avalanche TVS diode connected in series with a reverse-oriented rectifier diode inside a single hermetic glass package. This configuration cancels junction capacitance contributions, resulting in the lowest published capacitance for any 150 W TVS. The 1N8160USE3/TR's 4 pF value is measured at 0 V and remains stable across temperature and bias, enabling use on RF and high-speed serial links.
1N8160USE3/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 20V
- Voltage - Breakdown (Min):
- 22.8V
- Voltage - Clamping (Max) @ Ipp:
- 33.3V
- Current - Peak Pulse (10/1000µs):
- 4.5A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8160USE3/TR FAQ
1.How can I place an order for 1N8160USE3/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8160USE3/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8160USE3/TR reliable?
The price and inventory of 1N8160USE3/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8160USE3/TR is usually 5 days.
3.What payment methods are accepted for 1N8160USE3/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8160USE3/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N8160USE3/TR?
1N8160USE3/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8160USE3/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8160USE3/TR?
For technical support, including 1N8160USE3/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8160USE3/TR requirements.
6.How does Aetrix verify that 1N8160USE3/TR is sourced from the original manufacturer or authorized distributors?
All 1N8160USE3/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8160USE3/TR meets industry standards.
7.What is the process for return or replacement of 1N8160USE3/TR?
All 1N8160USE3/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8160USE3/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8160USE3/TR part is unused and in its original packaging.
Return procedure for 1N8160USE3/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8160USE3/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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