My Inquiry
My Account
Microchip Technology 1N8160US/TR
- Part No.:
- 1N8160US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8160US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:2,704
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
1N8160US/TR from Microsemi is a unidirectional transient voltage suppressor (TVS) diode with 20 V working standoff voltage (VWM), 33.3 V clamping voltage (VC) at 4.5 A peak pulse current, 4 pF capacitance, and 150 W peak pulse power rating for high-frequency ESD/EFT protection in aerospace and defense systems. It features voidless hermetic glass packaging, Category 1 metallurgical bonding, and RoHS-compliant matte tin plating.
For engineers reviewing the 1N8160US/TR datasheet, 1N8160US/TR pinout, 1N8160US/TR application, or 1N8160US/TR equivalent, this page delivers verified electrical parameters, axial-leaded mechanical configuration, low-capacitance TVS architecture with series rectifier, IEC61000-4-2/4-4 compliance, and direct replacement guidance for high-reliability transient suppression.
Technical Context
The 1N8160US/TR implements a unique dual-diode architecture: a TVS junction in series with an opposing rectifier diode to achieve ultra-low 4 pF total capacitance while maintaining unidirectional surge protection. This configuration enables operation up to RF frequencies without signal distortion.
It operates within -55 °C to +175 °C junction temperature range, supports 10/1000 µs impulse waveform compliance per IEC61000-4-5, and delivers 33.3 V clamping at 4.5 A IPP - critical for protecting sensitive RF front-ends and avionics data lines against lightning-induced transients.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 20 V - maximum continuous reverse-biased operating voltage before breakdown; defines safe signal swing margin in protected circuits. |
| VC @ IPP | 33.3 V at 4.5 A - clamping voltage during 10/1000 µs surge; ensures downstream ICs see <33.3 V under worst-case transient. |
| CT | 4 pF - total small-signal capacitance; preserves signal integrity in >1 GHz RF paths and high-speed serial links. |
| PPP | 150 W - peak pulse power handling at 25 °C; sustains multiple 10/1000 µs surges without degradation. |
| TJ Range | -55 to +175 °C - qualified for extended-temperature military and space-grade applications with no derating below 125 °C. |
| RθJA | 150 °C/W - thermal resistance junction-to-ambient; requires minimal PCB copper area for steady-state 1 W dissipation. |
Pinout & Package
Package: Axial-leaded, voidless hermetically sealed hard glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink terminal during forward conduction | Connected to protected line; conducts only during positive overvoltage events relative to cathode. |
| Cathode | Reference and clamping node | Connected to system ground or common reference; defines polarity and sets VWM/VC thresholds. |
Key Features
| Feature | Design Value |
|---|---|
| Series rectifier + TVS topology | Enables 4 pF capacitance - lowest available for 150 W TVS - preserving bandwidth in RF receiver inputs and high-speed data lines. |
| Category 1 metallurgical bond | Internal bond structure qualified per MIL-STD-750 Method 2019 for zero voids and high interfacial strength; eliminates latent failure modes in vibration-prone platforms. |
| Voidless hermetic glass seal | Prevents moisture ingress and corrosion over 20+ year service life in sealed avionics enclosures and satellite payloads. |
| Nonsensitive to ESD | Withstands >30 kV HBM per MIL-STD-750 Method 1020 without parameter shift - simplifies handling in cleanroom assembly. |
Applications
| RF Front-End Protection | Avionics Data Bus Protection |
|---|---|
Use Scenario: Protecting L-band radar receiver LNAs from induced lightning transients on antenna feedlines. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between antenna port and LNA input to shunt surges before damage occurs. Use Value: 4 pF capacitance avoids gain roll-off or phase distortion at 1.2–1.4 GHz; 33.3 V clamping prevents LNA gate oxide rupture. | Use Scenario: Safeguarding ARINC 429 receivers against ESD events during maintenance or connector mating. IC Role / Device Role / Timing Role: Standoff-rated TVS on differential receive lines to absorb ±15 kV contact discharge per IEC61000-4-2 Level 4. Use Value: 20 V VWM aligns with ARINC 429 nominal ±10 V differential swing; 150 W PPP handles fast-rising ESD pulses without latch-up. |
| Military Vehicle CAN Interface | Satellite Command & Telemetry |
Use Scenario: Transient suppression on 24 V vehicle CAN bus nodes exposed to load dump and alternator ripple. IC Role / Device Role / Timing Role: Unidirectional TVS on CAN_H line referenced to chassis ground to clamp negative-going spikes. Use Value: 175 °C max junction temperature supports under-hood deployment; 300 µA ID at VWM minimizes standby leakage in battery-critical systems. | Use Scenario: Secondary surge protection on S-band telemetry downlink receivers in LEO satellites. IC Role / Device Role / Timing Role: Radiation-hardened TVS on RF input path to mitigate single-event burnout from proton flux. Use Value: Inherent radiation hardness per MicroNote 050 eliminates need for shielding mass; hermetic seal prevents outgassing in vacuum. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N8160US | Same die, identical electrical specs, but supplied in bulk (not tape-and-reel); no TR suffix. | No reel packaging - unsuitable for automated SMT placement; manual or wave solder only. | Select 1N8160US/TR when using pick-and-place equipment; choose 1N8160US for hand-soldered prototyping or low-volume repair. |
| SMCJ20A | Higher 22.2 V VWM, 32.4 V VC at 4.6 A, 1700 pF capacitance, DO-214AB package. | Not suitable for RF or >100 MHz applications due to 1700× higher capacitance; better for power rail protection. | Choose SMCJ20A only for DC power line clamping where bandwidth is irrelevant; avoid for signal-line use with 1N8160US/TR. |
Compared with 1N8160US/TR, the 1N8160US offers identical protection performance but lacks tape-and-reel convenience, while SMCJ20A trades ultra-low capacitance for higher power handling in non-RF roles - making 1N8160US/TR the sole choice for high-frequency, high-reliability transient suppression.
Availability
1N8160US/TR is available at Aetrix Electronics and suitable for RF front-end protection, avionics data bus hardening, and satellite telemetry interface design requiring stable component supply across extended temperature and radiation environments.
Supply support for 1N8160US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and aerospace-grade components with legacy expertise in discrete protection devices.
The 1N8160US/TR belongs to Microsemi's 1N8149–1N8182 family of voidless-hermetic TVS diodes engineered specifically for mission-critical transient suppression in defense electronics, satellite subsystems, and high-frequency communication infrastructure.
FAQ
What is the clamping voltage of the 1N8160US/TR at its rated peak pulse current?
The 1N8160US/TR has a maximum clamping voltage (VC) of 33.3 V at 4.5 A peak impulse current (IPP) under 10/1000 µs waveform conditions. This value is measured per standard test methods defined in the Microsemi datasheet and ensures predictable voltage limiting during transient events. The 1N8160US/TR maintains this clamping performance across its full operating temperature range from -55 °C to +175 °C.
Is the 1N8160US/TR suitable for bidirectional transient protection?
No - the 1N8160US/TR is strictly unidirectional. For bidirectional protection, two 1N8160US/TR devices must be connected in anti-parallel configuration, as documented in Figure 5 of the Microsemi datasheet. This arrangement doubles the effective capacitance to 8 pF but retains the same clamping behavior in both polarities. The 1N8160US/TR itself does not support reverse conduction beyond its specified VWM.
Does the 1N8160US/TR meet IEC61000-4-2 and IEC61000-4-4 standards?
Yes - the 1N8160US/TR is explicitly rated for ESD protection per IEC61000-4-2 and electrical fast transient (EFT) immunity per IEC61000-4-4. Its 4 pF capacitance, low leakage (<0.5 µA at 20 V), and sub-34 V clamping enable robust pass-level compliance in Class 4 test setups. The 1N8160US/TR achieves this without external filtering, making it ideal for integrated front-end protection in certified avionics modules.
What is the lead finish and RoHS status of the 1N8160US/TR?
The 1N8160US/TR features RoHS-compliant matte tin plating over copper leads, as confirmed by Microsemi's "e3" nomenclature designation and compliance documentation. Lead finish meets JEDEC J-STD-609A Class 3 requirements, with no lead, cadmium, or hexavalent chromium. The 1N8160US/TR is fully compliant with EU RoHS Directive 2011/65/EU and China RoHS II, and is suitable for lead-free reflow processes up to 260 °C for 10 seconds.
How does the internal series rectifier affect the 1N8160US/TR's circuit behavior?
The internal series rectifier diode, oriented opposite the TVS junction, blocks reverse leakage and enables ultra-low 4 pF capacitance by isolating parasitic junction capacitance from the signal path. This architecture means the 1N8160US/TR conducts only during forward overvoltage events - it does not conduct in reverse bias except during breakdown. As a result, the 1N8160US/TR provides true unidirectional clamping with no reverse conduction window, enhancing reliability in precision analog and RF circuits.
1N8160US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 20V
- Voltage - Breakdown (Min):
- 22.8V
- Voltage - Clamping (Max) @ Ipp:
- 33.3V
- Current - Peak Pulse (10/1000µs):
- 4.5A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8160US/TR FAQ
1.How can I place an order for 1N8160US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8160US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8160US/TR reliable?
The price and inventory of 1N8160US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8160US/TR is usually 5 days.
3.What payment methods are accepted for 1N8160US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8160US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N8160US/TR?
1N8160US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8160US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8160US/TR?
For technical support, including 1N8160US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8160US/TR requirements.
6.How does Aetrix verify that 1N8160US/TR is sourced from the original manufacturer or authorized distributors?
All 1N8160US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8160US/TR meets industry standards.
7.What is the process for return or replacement of 1N8160US/TR?
All 1N8160US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8160US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8160US/TR part is unused and in its original packaging.
Return procedure for 1N8160US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8160US/TR Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
