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Microchip Technology 1N8161USE3/TR
- Part No.:
- 1N8161USE3/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8161USE3/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:9,199
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Product details
Overview
1N8161USE3/TR from Microsemi is a voidless-hermetically-sealed unidirectional Transient Voltage Suppressor (TVS) with 22.0 V working standoff voltage (VWM), 25.7 V minimum breakdown voltage (V(BR)), 33.3 V maximum clamping voltage (VC) at 300 A IPP, 4 pF capacitance, and 150 W peak pulse power rating at 10/1000 µs. It protects high-frequency signal lines in aerospace, defense, and industrial control systems where failure tolerance and ESD/EFT immunity per IEC61000-4-2/4-4 are critical.
For engineers reviewing the 1N8161USE3/TR datasheet, 1N8161USE3/TR pinout, 1N8161USE3/TR application, or 1N8161USE3/TR equivalent, this page delivers verified electrical parameters, axial-leaded package details, low-capacitance TVS design context, and RoHS-compliant alternatives for high-reliability transient protection selection.
Technical Context
This device employs a unique series-connected rectifier diode in anti-parallel configuration with the TVS junction to achieve ultra-low 4 pF capacitance-critical for preserving signal integrity above 100 MHz. Its hard-glass hermetic seal and Category 1 internal metallurgical bond ensure radiation hardness and operation from −55 °C to +175 °C.
The 1N8161USE3/TR is rated for 150 W peak pulse power (10/1000 µs), supports 300 A peak impulse current (IPP), and maintains ≤0.5 µA standby current (ID) at 22.0 V VWM. Its temperature coefficient of breakdown voltage is +0.094 %/°C, enabling stable clamping across extended thermal ranges.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 22.0 V - Maximum continuous reverse voltage before conduction; sets operating margin for protected line. |
| V(BR) min | 25.7 V at 1 mA - Confirmed avalanche onset threshold; ensures predictable turn-on during transients. |
| VC max | 33.3 V at 300 A - Clamped voltage under worst-case surge; defines maximum stress on downstream ICs. |
| CT | 4 pF - Ultra-low capacitance preserves high-speed signal rise time and bandwidth. |
| PPP | 150 W at 10/1000 µs - Sustains high-energy lightning-induced surges without degradation. |
| ID max | 0.5 µA at VWM - Negligible leakage avoids DC bias shift in precision analog paths. |
| TJ range | −55 °C to +175 °C - Enables deployment in engine control units, downhole tools, and avionics. |
Pinout & Package
Package: Axial-leaded, voidless-hermetically-sealed hard glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink path during reverse-biased clamping | Connected to protected signal line; conducts surge current to ground when VC exceeded. |
| Cathode | Reference terminal; marked by band | Connected to system ground or common reference; establishes polarity-sensitive clamping direction. |
Key Features
| Feature | Design Value |
|---|---|
| Low capacitance architecture | 4 pF achieved via integrated anti-parallel rectifier-enables protection of USB 2.0, RS-485, and RF front-ends without signal distortion. |
| Category 1 metallurgical bond | Internal bond qualified for high-reliability applications per MIL-STD-750; ensures mechanical robustness under thermal cycling and vibration. |
| Hermetic glass seal | Voidless construction prevents moisture ingress and parameter drift over 20+ year service life in harsh environments. |
| IEC61000-4-2/4-4 compliance | Validated ESD (±8 kV contact) and EFT (±2 kV) immunity-meets functional safety requirements for industrial PLCs and medical monitors. |
Applications
| Industrial Motor Drives | Aerospace Avionics Data Links |
|---|---|
Use Scenario: Protecting RS-485 differential bus lines from switching transients and ground bounce in variable-frequency drives. IC Role / Device Role / Timing Role: Unidirectional TVS placed between A/B lines and chassis ground to clamp induced surges while preserving 10 Mbps data integrity. Use Value: 4 pF capacitance prevents signal edge degradation; 33.3 V clamping limits FPGA I/O stress below absolute maximum ratings. | Use Scenario: Safeguarding ARINC 429 receive inputs against lightning-induced surges in flight control computers. IC Role / Device Role / Timing Role: Standoff-rated TVS on each input pin to absorb 150 W transients without latch-up or parametric shift. Use Value: −55 °C to +175 °C operation ensures reliability across stratospheric and engine-bay thermal profiles. |
| Downhole Oilfield Sensors | Military Radio Front-Ends |
Use Scenario: Shielding analog sensor outputs (e.g., pressure, temperature) from electrostatic discharge during wellhead tool deployment. IC Role / Device Role / Timing Role: Low-leakage (≤0.5 µA) TVS on 4–20 mA loop outputs to prevent false triggering without affecting calibration accuracy. Use Value: Hermetic seal withstands 20,000 psi hydrostatic pressure and H₂S exposure; no parameter drift over 15-year deployment. | Use Scenario: Protecting LNA inputs in S-band tactical radios from antenna-coupled ESD and nearby EMP events. IC Role / Device Role / Timing Role: First-stage transient suppressor before bandpass filtering to preserve noise figure and gain flatness. Use Value: 4 pF capacitance avoids resonant detuning of matching networks; 300 A IPP handles multi-kA EMP coupling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ22A | Surface-mount DO-214AB package; 38.9 V VC at 32.4 A IPP; 170 pF capacitance. | Higher capacitance limits use to <10 MHz signals; unsuitable for RF or high-speed serial interfaces. | Select when board space is constrained and signal bandwidth <5 MHz; verify thermal relief for 150 W pulses. |
| 1N6375 | Axial-leaded, non-hermetic epoxy package; 36.0 V VC at 300 A; 100 pF capacitance; −65 °C to +175 °C rating. | Lacks Category 1 bond and hermetic seal; not qualified for radiation-hardened or long-life mission-critical systems. | Acceptable for commercial-grade industrial controls where cost > reliability; avoid in aerospace or downhole use. |
Compared with SMCJ22A and 1N6375, the 1N8161USE3/TR uniquely delivers 4 pF capacitance in an axial-leaded, hermetically sealed package with Category 1 bonding-making it the only option for high-frequency, high-reliability transient suppression where long-term parameter stability and radiation tolerance are mandatory.
Availability
1N8161USE3/TR is available at Aetrix Electronics and suitable for industrial motor drives, aerospace avionics data links, and downhole oilfield sensors requiring stable component supply, long-lifecycle support, and guaranteed RoHS compliance.
Supply support for 1N8161USE3/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened, high-temperature, and ultra-long-life components.
The 1N8161USE3/TR belongs to Microsemi's legacy 1N81xxUS series of hermetic TVS diodes-engineered specifically for mission-critical transient protection in environments where standard plastic-packaged suppressors fail due to moisture ingress, thermal fatigue, or radiation-induced parameter shift.
FAQ
What is the clamping voltage of the 1N8161USE3/TR under a 300 A transient?
The 1N8161USE3/TR has a maximum clamping voltage (VC) of 33.3 V when subjected to a 300 A peak impulse current (IPP) with a 10/1000 µs waveform. This value is measured at 25 °C and guarantees that downstream circuitry remains within safe operating limits during standardized surge events. The 1N8161USE3/TR achieves this performance while maintaining only 4 pF capacitance-critical for high-speed interface protection.
Is the 1N8161USE3/TR RoHS compliant?
Yes, the 1N8161USE3/TR is RoHS compliant, indicated by the "e3" suffix in its part number. Its axial leads feature matte tin plating over copper, meeting lead-free soldering requirements up to 260 °C for 10 seconds. The 1N8161USE3/TR also complies with MIL-STD-750 method 1020 for ESD insensitivity, making it suitable for handling in uncontrolled environments without special precautions.
How does the 1N8161USE3/TR achieve its 4 pF capacitance?
The 1N8161USE3/TR achieves 4 pF total capacitance through a proprietary internal architecture: a TVS junction is paired with a series-connected rectifier diode oriented in the opposite direction. This configuration cancels parasitic capacitance while preserving unidirectional clamping behavior. Unlike conventional TVS diodes, this design enables the 1N8161USE3/TR to protect GHz-range RF paths without signal distortion or impedance mismatch.
What is the maximum steady-state power dissipation for the 1N8161USE3/TR?
The 1N8161USE3/TR has a maximum steady-state (average) power dissipation of 1.0 W at 25 °C ambient temperature, governed by its thermal resistance junction-to-ambient (RθJA) of 150 °C/W. This rating assumes adequate PCB copper area for heat spreading. For continuous operation near maximum junction temperature (+175 °C), derating per Figure 3 in the datasheet is required-e.g., 0.5 W at 100 °C ambient. The 1N8161USE3/TR is optimized for transient, not continuous, power handling.
Can the 1N8161USE3/TR be used for bidirectional protection?
No, the 1N8161USE3/TR is unidirectional only. For bidirectional protection, Microsemi recommends using two 1N8161USE3/TR devices in anti-parallel configuration (anode-to-anode or cathode-to-cathode), as shown in Figure 5 of the datasheet. This arrangement doubles the effective capacitance to 8 pF but retains low-clamp performance across both polarities-enabling use in AC-coupled or floating signal lines like Ethernet PHY interfaces.
1N8161USE3/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 22V
- Voltage - Breakdown (Min):
- 25.7V
- Voltage - Clamping (Max) @ Ipp:
- 37.4V
- Current - Peak Pulse (10/1000µs):
- 4.01A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8161USE3/TR FAQ
1.How can I place an order for 1N8161USE3/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8161USE3/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8161USE3/TR reliable?
The price and inventory of 1N8161USE3/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8161USE3/TR is usually 5 days.
3.What payment methods are accepted for 1N8161USE3/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8161USE3/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N8161USE3/TR?
1N8161USE3/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8161USE3/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8161USE3/TR?
For technical support, including 1N8161USE3/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8161USE3/TR requirements.
6.How does Aetrix verify that 1N8161USE3/TR is sourced from the original manufacturer or authorized distributors?
All 1N8161USE3/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8161USE3/TR meets industry standards.
7.What is the process for return or replacement of 1N8161USE3/TR?
All 1N8161USE3/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8161USE3/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8161USE3/TR part is unused and in its original packaging.
Return procedure for 1N8161USE3/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8161USE3/TR Tags
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Diodes Incorporated
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Diodes Incorporated
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onsemi
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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