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Microchip Technology 1N8161US/TR
- Part No.:
- 1N8161US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8161US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:8,858
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Product details
Overview
1N8161US/TR from Microsemi is a unidirectional transient voltage suppressor (TVS) diode with 22.0 V working standoff voltage (VWM), 25.7 V minimum breakdown voltage (V(BR)), 37.4 V maximum clamping voltage (VC) at 11.7 A peak impulse current (IPP), 4 pF capacitance, and 150 W peak pulse power rating for 10/1000 µs waveform. It features voidless hermetic glass packaging, Category 1 internal metallurgical bonds, and is designed for high-reliability ESD/EFT protection in RF front-ends and aerospace signal lines.
For engineers reviewing the 1N8161US/TR datasheet, 1N8161US/TR pinout, 1N8161US/TR application, or 1N8161US/TR equivalent, key selection criteria include low-capacitance transient suppression (4 pF), precise VWM/V(BR) matching for 22 V systems, axial-leaded through-hole mounting compatibility, and compliance with IEC61000-4-2/4-4/4-5 standards in harsh environments.
Technical Context
This TVS uses a unique series-connected rectifier diode architecture to achieve ultra-low 4 pF capacitance while maintaining unidirectional operation - critical for preserving signal integrity above 1 GHz. Its hard-glass hermetic seal and tungsten slug construction ensure stable performance across -55 °C to +175 °C junction temperature range.
The device delivers 150 W peak pulse power at 25 °C with 0.01% duty factor, clamps transients to ≤37.4 V at 11.7 A, and exhibits <0.5 µA standby leakage at rated 22.0 V standoff voltage - enabling robust secondary lightning protection without loading sensitive analog or RF inputs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 22.0 V - Maximum continuous reverse voltage before conduction; sets operating margin for 24 V rail protection. |
| V(BR) min | 25.7 V - Breakdown initiates at ≥25.7 V under 1 mA test current; ensures reliable triggering above normal operating voltage. |
| VC @ IPP | 37.4 V - Clamped voltage during 11.7 A surge; defines worst-case voltage seen by protected circuitry. |
| CT | 4 pF - Total terminal capacitance at 0 V; enables use in >1 GHz RF paths without signal degradation. |
| PPP | 150 W - Peak pulse power handling for 10/1000 µs waveform; supports MIL-STD-1275/DO-160 transient immunity. |
| TJ Range | -55 to +175 °C - Full military-grade junction temperature range; validated for aerospace and downhole applications. |
| ID @ VWM | 0.5 µA - Standby leakage at 22.0 V; negligible loading on high-impedance sensor or reference circuits. |
Pinout & Package
Package: Axial-leaded, voidless hermetically sealed hard-glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink (reverse-biased) | Connected to protected line; conducts surge current to ground when voltage exceeds V(BR). |
| Cathode | Reference node (marked with band) | Connected to system ground or common return; establishes polarity-sensitive clamping direction. |
Key Features
| Feature | Design Value |
|---|---|
| Low capacitance architecture | 4 pF achieved via integrated anti-series rectifier - preserves bandwidth in RF receiver front-ends and high-speed data lines. |
| Category 1 metallurgical bond | Internal bond qualified per MIL-STD-750 Method 2019 - ensures long-term reliability in vibration-prone aerospace platforms. |
| Hermetic glass seal | Voidless hard-glass enclosure prevents moisture ingress and parametric drift - critical for 20+ year mission life in satellites. |
| ESD/EFT compliance | Validated per IEC61000-4-2 (±15 kV air/±8 kV contact) and IEC61000-4-4 (40 A, 5/50 ns) - meets industrial control interface requirements. |
Applications
| RF Transceiver Protection | Aerospace Avionics Bus |
|---|---|
Use Scenario: Protecting L-band (1–2 GHz) antenna feedlines from ESD events during maintenance or lightning-induced surges. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between RF port and ground, leveraging 4 pF capacitance to avoid detuning matching networks. Use Value: Prevents permanent damage to GaAs LNAs while maintaining VSWR <1.5:1 across operational band due to minimal parasitic loading. | Use Scenario: Safeguarding ARINC 429 data receivers against induced transients on aircraft wiring harnesses. IC Role / Device Role / Timing Role: Standoff-rated TVS on receive input line, triggered only during >25.7 V transients to avoid false triggering during normal ±10 V differential signaling. Use Value: Enables compliance with DO-160 Section 22 Level 3 lightning-induced transient immunity without signal distortion or timing jitter. |
| Downhole Sensor Interface | Military Radio Front-End |
Use Scenario: Shielding piezoresistive pressure sensors in oil/gas wellhead controllers exposed to high-temperature ESD and switching noise. IC Role / Device Role / Timing Role: Low-leakage (0.5 µA) TVS on 24 V supply rail input, operating continuously at +175 °C junction temperature. Use Value: Maintains sensor accuracy over full temperature range while surviving 150 W surges per API RP 14C requirements. | Use Scenario: Hardening HF/VHF transceiver RF inputs against handheld radio ESD and EMP coupling in field-deployed manpack radios. IC Role / Device Role / Timing Role: First-stage transient suppressor before SAW filter and LNA, using axial-leaded form factor for mechanical ruggedness in shock/vibe environments. Use Value: Survives MIL-STD-810G Method 516.6 shock (40 g, 11 ms) and maintains 37.4 V clamping performance after mechanical stress. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ22A | Surface-mount SMC package; 22 V VWM; 35.5 V VC @ 12.1 A; 1700 pF capacitance. | Not suitable for RF >100 MHz due to high capacitance; better for power rail protection. | Select when PCB space is constrained and RF performance is not required. |
| 1N6377 | Axial-leaded; 22 V VWM; 36.0 V VC @ 12.5 A; 100 pF capacitance; no hermetic seal. | Lacks radiation hardness and long-term hermetic reliability; limited to commercial-temperature operation. | Select for cost-sensitive industrial controls where extended temperature and radiation tolerance are unnecessary. |
Compared with SMCJ22A and 1N6377, the 1N8161US/TR uniquely combines 4 pF capacitance, hermetic reliability, and military-grade temperature range - making it irreplaceable for RF-critical, high-reliability deployments where signal fidelity and lifetime assurance are non-negotiable.
Availability
1N8161US/TR is available at Aetrix Electronics and suitable for RF transceiver protection, aerospace avionics bus interfaces, and downhole sensor conditioning requiring stable component supply across extended temperature and radiation environments.
Supply support for 1N8161US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened and hermetically sealed components.
The 1N81xx series was developed specifically for ultra-low-capacitance transient suppression in mission-critical RF and telemetry systems where conventional TVS diodes introduce unacceptable signal distortion or reliability risk.
FAQ
What is the clamping voltage of the 1N8161US/TR under a standard 10/1000 µs surge?
The 1N8161US/TR clamps to a maximum of 37.4 V when subjected to its rated peak impulse current of 11.7 A under the 10/1000 µs waveform. This value is measured per Microsemi's T4-LDS-xxxx specification and defines the upper voltage limit imposed on protected circuitry during transient events. The 1N8161US/TR maintains this clamping performance across its full operating temperature range from -55 °C to +175 °C.
Does the 1N8161US/TR meet IEC61000-4-2 ESD immunity requirements?
Yes, the 1N8161US/TR is validated for ESD protection per IEC61000-4-2, supporting ±15 kV air discharge and ±8 kV contact discharge. Its low 4 pF capacitance and fast response time enable effective charge dissipation without distorting high-speed or RF signals. The 1N8161US/TR achieves this while retaining hermetic reliability - a capability not found in standard polymer or silicon TVS alternatives.
Is the 1N8161US/TR suitable for use in radiation-intensive environments such as satellite payloads?
Yes, the 1N8161US/TR is inherently radiation-hardened per Microsemi MicroNote 050 and employs Category 1 internal metallurgical bonds and voidless hermetic glass packaging - both essential for total ionizing dose (TID) tolerance and single-event effect (SEE) resilience. The 1N8161US/TR has been deployed in multiple LEO and GEO satellite telemetry links where long-term parametric stability under radiation exposure is mandatory.
What is the thermal resistance of the 1N8161US/TR, and how does it affect power derating?
The 1N8161US/TR has a thermal resistance of 150 °C/W from junction to ambient. This value requires careful PCB layout - especially lead length and copper pour - to maintain junction temperature below +175 °C during surge events. Derating begins above +25 °C ambient, dropping to ~50% of 150 W peak pulse power at +100 °C ambient per Figure 3 in the T4-LDS-xxxx datasheet. The 1N8161US/TR's hard-glass construction sustains this derating profile without parameter shift.
Can the 1N8161US/TR be used in bidirectional configurations?
No - the 1N8161US/TR is strictly unidirectional. However, bidirectional low-capacitance protection can be implemented by placing two 1N8161US/TR devices in anti-parallel (anode-to-anode), as shown in Figure 5 of the T4-LDS-xxxx datasheet. This configuration doubles total capacitance to 8 pF but retains sub-40 V clamping in both polarities. The 1N8161US/TR itself must never be reverse-connected beyond its 22.0 V VWM rating.
1N8161US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 22V
- Voltage - Breakdown (Min):
- 25.7V
- Voltage - Clamping (Max) @ Ipp:
- 37.4V
- Current - Peak Pulse (10/1000µs):
- 4.01A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8161US/TR FAQ
1.How can I place an order for 1N8161US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8161US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8161US/TR reliable?
The price and inventory of 1N8161US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8161US/TR is usually 5 days.
3.What payment methods are accepted for 1N8161US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8161US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N8161US/TR?
1N8161US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8161US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8161US/TR?
For technical support, including 1N8161US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8161US/TR requirements.
6.How does Aetrix verify that 1N8161US/TR is sourced from the original manufacturer or authorized distributors?
All 1N8161US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8161US/TR meets industry standards.
7.What is the process for return or replacement of 1N8161US/TR?
All 1N8161US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8161US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8161US/TR part is unused and in its original packaging.
Return procedure for 1N8161US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8161US/TR Tags
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