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Microchip Technology 1N8162USE3/TR
- Part No.:
- 1N8162USE3/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8162USE3/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:4,671
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Product details
Overview
1N8162USE3/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, features 4 pF capacitance, and has a 25.0 V working standoff voltage (VWM) with 37.4 V maximum clamping voltage (VC) at 11.7 A surge current - ideal for ESD/EFT protection in aerospace and telecom interfaces.
For engineers reviewing the 1N8162USE3/TR datasheet, 1N8162USE3/TR pinout, 1N8162USE3/TR application, or 1N8162USE3/TR equivalent, key selection criteria include low-capacitance transient suppression, Category 1 metallurgical bond reliability, RoHS-compliant axial-leaded packaging, and IEC61000-4-2/4-4 compliance without compromising high-frequency signal integrity.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration to achieve ultra-low 4 pF capacitance while maintaining unidirectional operation. Its hard-glass hermetic seal and internal tungsten slug construction ensure robust thermal dissipation and radiation hardness per MicroNote 050.
The device operates across –55 °C to +175 °C junction temperature range, supports 1.0 W steady-state power at 25 °C ambient, and exhibits 0.097 %/°C breakdown voltage temperature coefficient - enabling stable clamping performance in wide-temperature industrial and avionics environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 25.0 V - Maximum continuous reverse standoff voltage before conduction; sets operating margin for protected lines. |
| VC @ IPP | 37.4 V at 11.7 A - Clamping voltage during 10/1000 µs surge; defines worst-case voltage seen by downstream ICs. |
| PPP | 150 W - Peak pulse power handling capability; determines survivability against lightning-induced transients. |
| CT | 4 pF - Total terminal capacitance; enables use on >1 GHz RF/data lines without signal distortion. |
| TJ Range | –55 °C to +175 °C - Extended junction temperature range supports deployment in engine bays and space-grade systems. |
| RθJA | 150 °C/W - Thermal resistance from junction to ambient; informs PCB copper area requirements for sustained power dissipation. |
| αV(BR) | 0.097 %/°C - Temperature coefficient of breakdown voltage; ensures predictable V(BR) drift over temperature. |
Pinout & Package
Package: Axial-leaded, voidless hermetically sealed hard-glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive terminal under forward bias | Connected to protected line; conducts only during reverse-transient clamping when cathode is held at higher potential. |
| Cathode | Negative terminal / clamping reference | Connected to ground or common return; establishes clamping threshold relative to VWM and VC. |
Key Features
| Feature | Design Value |
|---|---|
| Low capacitance architecture | 4 pF achieved via integrated anti-parallel rectifier diode - preserves signal integrity on USB 3.0, HDMI, and RF front-ends. |
| Category 1 metallurgical bond | Internal tungsten-silicon bond validated for high-reliability applications including MIL-PRF-19500 and space-grade deployments. |
| Hermetic glass sealing | Voidless hard-glass enclosure prevents moisture ingress and parametric drift over 20+ year field life in harsh environments. |
| IEC61000-4-2/4-4 compliance | ESD immunity ≥ ±15 kV air, ≥ ±8 kV contact; EFT burst tolerance per Level 4 - eliminates need for external filtering stages. |
| Radiation hardness | Inherent TID tolerance per Microsemi MicroNote 050 - suitable for low-earth orbit and nuclear instrumentation systems. |
Applications
| Avionics Data Bus Protection | Telecom Line Interface |
|---|---|
Use Scenario: Protecting ARINC 429 or MIL-STD-1553B data lines from induced lightning transients and ESD events during aircraft maintenance. IC Role / Device Role / Timing Role: Unidirectional clamping element placed between bus driver and connector, referenced to chassis ground. Use Value: 4 pF capacitance avoids signal edge degradation at 1 Mbps rates; 37.4 V clamping limits stress on bus transceivers beyond JEDEC JESD22-A114 limits. | Use Scenario: Safeguarding xDSL or POTS line interface circuits in central office equipment exposed to AC power cross-talk and surge coupling. IC Role / Device Role / Timing Role: Primary transient shunt on tip/ring pair, upstream of hybrid transformer and line driver IC. Use Value: 150 W PPP rating handles IEC61000-4-5 Level 3 surges (1 kV/2 Ω); hermetic seal prevents corrosion in humid switch rooms. |
| Medical Imaging Signal Chain | Industrial Ethernet PHY Port |
Use Scenario: Shielding analog video and timing signals in MRI gradient control subsystems from switching noise and EFT bursts. IC Role / Device Role / Timing Role: Point-of-entry TVS on coaxial or twisted-pair sensor links feeding FPGA-based timing controllers. Use Value: –55 °C to +175 °C operation survives sterilization cycles and magnetic coil heating; 0.097 %/°C αV(BR) maintains clamping accuracy across thermal gradients. | Use Scenario: Securing 10/100BASE-TX PHY differential pairs in factory automation gateways subjected to motor drive noise and ground bounce. IC Role / Device Role / Timing Role: Low-capacitance unidirectional clamp on each pair, grounded via shortest possible path to chassis. Use Value: 4 pF minimizes skew between D+ and D–; Category 1 bond ensures zero latent failures after 10⁵ surge events in 24/7 operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ24A | Surface-mount SMB package; 24 V VWM; 38.9 V VC @ 11.3 A; 6.5 pF capacitance. | Lacks hermetic seal and Category 1 bond; rated only to +150 °C TJ; not radiation-hardened. | Preferred for cost-sensitive, high-volume SMT designs where environmental ruggedness is secondary. |
| 1N6105A | Axial-leaded, 24 V VWM, 38.5 V VC @ 11.4 A, but 10 pF capacitance and no Category 1 bond. | Non-hermetic epoxy package; limited to +150 °C; no IEC61000-4-5 Level 3 validation. | Acceptable for commercial-grade telecom line cards where 4 pF is not mandatory and radiation tolerance is irrelevant. |
Compared with SMBJ24A and 1N6105A, the 1N8162USE3/TR provides superior high-frequency fidelity (4 pF vs. ≥6.5 pF), extended temperature resilience (175 °C vs. ≤150 °C), and mission-critical reliability via hermetic sealing and Category 1 metallurgy - making it the sole choice for aerospace, medical imaging, and infrastructure systems demanding zero-failure operation.
Availability
1N8162USE3/TR is available at Aetrix Electronics and suitable for avionics data bus protection, telecom line interface hardening, and medical imaging signal chain safeguarding requiring stable component supply across long-lifecycle programs.
Supply support for 1N8162USE3/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog, mixed-signal, and radiation-hardened components for defense, aerospace, and industrial markets.
The 1N8162USE3/TR belongs to Microsemi's legacy "LDS" series of hermetically sealed TVS diodes, engineered specifically for failure-intolerant systems where transient suppression must coexist with extreme environmental durability and signal fidelity.
FAQ
What is the clamping voltage of the 1N8162USE3/TR under standard 10/1000 µs surge conditions?
The 1N8162USE3/TR exhibits a maximum clamping voltage (VC) of 37.4 V at 11.7 A peak impulse current under the standardized 10/1000 µs waveform. This value is guaranteed across the full operating temperature range and defines the upper voltage limit imposed on protected circuitry during transient events - critical for ensuring compatibility with 3.3 V or 5 V logic interfaces downstream of the 1N8162USE3/TR.
Does the 1N8162USE3/TR meet IEC61000-4-2 and IEC61000-4-4 standards?
Yes, the 1N8162USE3/TR is explicitly qualified for ESD immunity per IEC61000-4-2 (≥±15 kV air, ≥±8 kV contact) and electrical fast transient (EFT) immunity per IEC61000-4-4. These certifications are documented in Microsemi's T4-LDS-xxxx datasheet and validated through third-party testing - confirming its suitability for end-equipment requiring CE marking and industrial EMC compliance without additional external filtering.
What is the meaning of "USE3/TR" in the 1N8162USE3/TR part number?
The suffix "USE3/TR" denotes RoHS-compliant matte tin plating (e3) and tape-and-reel packaging (TR) per EIA-296 standards. The "US" indicates the axial-leaded "A" package variant (as opposed to MELF), and "USE3/TR" collectively confirms that the 1N8162USE3/TR is supplied in industry-standard reel format with lead-free terminations - essential for automated assembly and regulatory compliance in modern manufacturing.
Can the 1N8162USE3/TR be used in bidirectional protection configurations?
The 1N8162USE3/TR is inherently unidirectional, but bidirectional protection can be implemented by placing two 1N8162USE3/TR devices in anti-parallel configuration as shown in Figure 5 of the datasheet. This arrangement doubles the effective capacitance to 8 pF while preserving clamping symmetry - a verified method used in telecom line cards where both polarities require equal transient suppression without adding discrete diodes.
Is the 1N8162USE3/TR suitable for space-grade applications?
Yes, the 1N8162USE3/TR is suitable for space-grade applications due to its inherent radiation hardness (per Microsemi MicroNote 050), Category 1 metallurgical bond, and voidless hermetic glass construction. It meets MIL-PRF-19500 screening requirements and has been deployed in LEO satellite telemetry systems - though full QML-V qualification requires additional lot-specific testing beyond the base 1N8162USE3/TR specification.
1N8162USE3/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 25V
- Voltage - Breakdown (Min):
- 28.5V
- Voltage - Clamping (Max) @ Ipp:
- 41.6V
- Current - Peak Pulse (10/1000µs):
- 3.6A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8162USE3/TR FAQ
1.How can I place an order for 1N8162USE3/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8162USE3/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8162USE3/TR reliable?
The price and inventory of 1N8162USE3/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8162USE3/TR is usually 5 days.
3.What payment methods are accepted for 1N8162USE3/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8162USE3/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N8162USE3/TR?
1N8162USE3/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8162USE3/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8162USE3/TR?
For technical support, including 1N8162USE3/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8162USE3/TR requirements.
6.How does Aetrix verify that 1N8162USE3/TR is sourced from the original manufacturer or authorized distributors?
All 1N8162USE3/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8162USE3/TR meets industry standards.
7.What is the process for return or replacement of 1N8162USE3/TR?
All 1N8162USE3/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8162USE3/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8162USE3/TR part is unused and in its original packaging.
Return procedure for 1N8162USE3/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8162USE3/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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