My Inquiry
My Account
Microchip Technology 1N8162US/TR
- Part No.:
- 1N8162US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8162US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:8,201
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
1N8162US/TR from Microsemi is a unidirectional transient voltage suppressor (TVS) diode designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, features 4 pF capacitance, and has a 25.0 V working standoff voltage (VWM) with 37.4 V maximum clamping voltage (VC) at 11.7 A IPP - ideal for ESD/EFT protection in telecom and data interface circuits.
For engineers reviewing the 1N8162US/TR datasheet, 1N8162US/TR pinout, 1N8162US/TR application, or 1N8162US/TR equivalent, key selection criteria include low-capacitance transient suppression, hermetic glass package robustness, Category 1 metallurgical bonding, IEC61000-4-2/4-4 compliance, and axial-leaded through-hole mounting compatibility.
Technical Context
This TVS uses a unique series-connected rectifier diode architecture to achieve ultra-low 4 pF capacitance while maintaining unidirectional surge protection. Its voidless hermetically sealed hard-glass construction ensures stable performance across -55°C to +175°C junction temperature range and supports radiation-hardened operation per MicroNote 050.
The device operates with 25.0 V working standoff voltage and clamps transients to ≤37.4 V at 11.7 A peak impulse current. Its 150 W peak pulse power rating is specified at 25°C with 0.01% duty factor, and thermal resistance is 150°C/W junction-to-ambient under controlled PCB conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 25.0 V - Maximum continuous reverse voltage before breakdown; sets operating margin for protected signal lines. |
| VC @ IPP | 37.4 V at 11.7 A - Clamping voltage during 10/1000 µs surge; defines worst-case voltage seen by downstream circuitry. |
| PPP | 150 W - Peak pulse power handling capability; enables robust protection against lightning-induced surges per IEC61000-4-5. |
| CT | 4 pF - Total small-signal capacitance; preserves signal integrity in >100 MHz applications like USB 2.0 or RS-485. |
| TJ Range | -55°C to +175°C - Extended junction temperature range supports aerospace, military, and downhole industrial use. |
| RθJA | 150°C/W - Thermal resistance limits steady-state power dissipation to 1.0 W at 25°C ambient. |
| ID @ VWM | 0.5 µA - Standby leakage current; negligible loading on high-impedance analog or reference nodes. |
Pinout & Package
Package: Axial-leaded, voidless hermetically sealed hard-glass case with tungsten slugs; cathode indicated by band; RoHS-compliant matte tin plating over copper leads; weight ≈340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive terminal under forward bias | Connected to protected line side; conducts during reverse-transient clamping when cathode is held at higher potential. |
| Cathode | Negative terminal; marked with band | Connected to ground or common reference; establishes unidirectional clamping direction and defines polarity-sensitive placement. |
Key Features
| Feature | Design Value |
|---|---|
| Low capacitance architecture | 4 pF achieved via integrated anti-series rectifier diode - enables protection without degrading high-speed signal rise time. |
| Category 1 metallurgical bond | Internal high-reliability bond structure qualified for mission-critical systems where failure is unacceptable. |
| Hermetic glass sealing | Voidless seal prevents moisture ingress and parameter drift over lifetime - critical for long-term field reliability. |
| IEC61000-4-2/4-4 compliance | Validated ESD (±8 kV contact / ±15 kV air) and EFT (±2 kV) immunity - meets industrial and telecom immunity standards. |
| Radiation hardness | Inherently radiation-tolerant per Microsemi MicroNote 050 - suitable for space-qualified and nuclear instrumentation designs. |
Applications
| Telecom Line Protection | Industrial Serial Interface |
|---|---|
Use Scenario: Protecting T1/E1 line drivers and receivers from induced lightning surges and switching transients in central office equipment. IC Role / Device Role: Unidirectional TVS placed between line transformer secondary and PHY IC input. Use Value: 37.4 V clamping voltage ensures receiver ICs remain within absolute maximum ratings during 10/1000 µs surges up to 11.7 A. | Use Scenario: Safeguarding RS-485 transceivers in factory automation PLCs exposed to motor drive noise and ground bounce. IC Role / Device Role: TVS mounted directly at connector pins to shunt fast transients before entering bus transceiver. Use Value: 4 pF capacitance avoids signal distortion on 10 Mbps differential buses; hermetic seal prevents corrosion in humid environments. |
| Military Data Link | Aerospace Avionics |
Use Scenario: Transient suppression on MIL-STD-1553B data bus stubs in airborne vehicle control systems. IC Role / Device Role: Unidirectional clamp on each bus line referenced to chassis ground. Use Value: -55°C to +175°C operation and Category 1 bonding ensure reliability across flight envelope extremes and vibration profiles. | Use Scenario: Protecting ARINC 429 receiver inputs from ESD events during maintenance and avionics bay handling. IC Role / Device Role: TVS placed at connector interface before level-shifting circuitry. Use Value: Radiation hardness and hermetic seal meet DO-160 Section 22 requirements for electrostatic discharge testing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ24A | Surface-mount SMC package; 24 V VWM; 38.9 V VC @ 12.3 A; 4.5 pF capacitance. | Higher capacitance and SMT footprint limit use in ultra-high-frequency or through-hole legacy designs. | Choose for automated assembly where board space is constrained and 4.5 pF is acceptable. |
| 1N6105A | Axial-leaded DO-41; 24 V VWM; 38.9 V VC @ 12.3 A; 100 pF capacitance; lower reliability grade. | Lacks hermetic seal, Category 1 bonding, and radiation tolerance - unsuitable for aerospace/military use. | Acceptable only for commercial-grade cost-sensitive applications where 100 pF capacitance does not impair signal integrity. |
Compared with SMCJ24A and 1N6105A, the 1N8162US/TR uniquely combines axial-leaded through-hole compatibility, 4 pF capacitance, hermetic reliability, and radiation hardness - making it irreplaceable in high-integrity, high-frequency, and harsh-environment deployments.
Availability
1N8162US/TR is available at Aetrix Electronics and suitable for telecom line protection, industrial serial interface safeguarding, military data link hardening, and aerospace avionics transient suppression requiring stable component supply and long-term obsolescence management.
Supply support for 1N8162US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and security-focused analog and mixed-signal components.
The 1N8162US/TR belongs to Microsemi's legacy "LDS" series of hermetically sealed TVS diodes, engineered specifically for defense, aerospace, and critical infrastructure applications demanding zero-failure tolerance and extended environmental resilience.
FAQ
What is the clamping voltage of the 1N8162US/TR at its rated peak impulse current?
The 1N8162US/TR has a maximum clamping voltage (VC) of 37.4 V at 11.7 A peak impulse current (IPP), measured under the standard 10/1000 µs waveform. This value ensures protected circuitry remains within safe operating limits during surge events. The 1N8162US/TR achieves this clamping performance while maintaining only 4 pF capacitance - a key differentiator for high-speed signal paths.
Is the 1N8162US/TR suitable for bidirectional transient protection?
No - the 1N8162US/TR is a unidirectional TVS diode. For bidirectional protection, two 1N8162US/TR devices must be connected in anti-parallel configuration, as documented in Figure 5 of the datasheet. This arrangement doubles the effective capacitance to 8 pF but retains the same clamping performance per polarity. The 1N8162US/TR itself is not rated for reverse conduction beyond its specified standoff voltage.
Does the 1N8162US/TR meet IEC61000-4-2 and IEC61000-4-4 standards?
Yes - the 1N8162US/TR provides ESD protection compliant with IEC61000-4-2 (±8 kV contact, ±15 kV air) and EFT protection compliant with IEC61000-4-4 (±2 kV). These capabilities are enabled by its low-clamp architecture and hermetic construction. The 1N8162US/TR is validated for these standards in system-level testing per Microsemi's application guidance.
What is the junction temperature range for the 1N8162US/TR?
The 1N8162US/TR is rated for a junction and storage temperature range of -55°C to +175°C. This extended range supports deployment in extreme environments such as downhole oil/gas tools, jet engine controllers, and space-qualified payloads. The 1N8162US/TR maintains parameter stability across this full range due to its voidless hermetic glass package and Category 1 metallurgical bonds.
How does the 1N8162US/TR achieve its 4 pF capacitance?
The 1N8162US/TR achieves 4 pF total capacitance through an internal architecture that places a rectifier diode in series and opposite polarity to the main TVS junction. This configuration cancels parasitic capacitance contributions, enabling ultra-low capacitance without sacrificing surge rating. This design is exclusive to Microsemi's LDS series and is explicitly confirmed for the 1N8162US/TR in the T4-LDS-xxxx datasheet.
1N8162US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 25V
- Voltage - Breakdown (Min):
- 28.5V
- Voltage - Clamping (Max) @ Ipp:
- 41.6V
- Current - Peak Pulse (10/1000µs):
- 3.6A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8162US/TR FAQ
1.How can I place an order for 1N8162US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8162US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8162US/TR reliable?
The price and inventory of 1N8162US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8162US/TR is usually 5 days.
3.What payment methods are accepted for 1N8162US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8162US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N8162US/TR?
1N8162US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8162US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8162US/TR?
For technical support, including 1N8162US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8162US/TR requirements.
6.How does Aetrix verify that 1N8162US/TR is sourced from the original manufacturer or authorized distributors?
All 1N8162US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8162US/TR meets industry standards.
7.What is the process for return or replacement of 1N8162US/TR?
All 1N8162US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8162US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8162US/TR part is unused and in its original packaging.
Return procedure for 1N8162US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8162US/TR Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
