My Inquiry
My Account
Microchip Technology 1N8163USE3/TR
- Part No.:
- 1N8163USE3/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8163USE3/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:8,940
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
1N8163USE3/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 31.4 V minimum breakdown voltage (V(BR)), 28.0 V working standoff voltage (VWM), and ultra-low 4 pF capacitance - enabling ESD/EFT protection in RF front-ends, data lines, and aerospace avionics interfaces.
For engineers reviewing the 1N8163USE3/TR datasheet, 1N8163USE3/TR pinout, 1N8163USE3/TR application, or 1N8163USE3/TR equivalent, key selection criteria include its Category 1 metallurgical bond, RoHS-compliant e3 marking, axial-leaded hard-glass package, and verified IEC61000-4-2/4-4 compliance - critical for MIL-STD-750-tested, radiation-hardened systems requiring zero-failure tolerance.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve 4 pF total capacitance - significantly lower than standard 150 W TVS devices. Its voidless hermetic glass construction ensures stable parametric performance across -55°C to +175°C junction temperature range.
The device operates as a unidirectional clamp with 45.7 V maximum clamping voltage (VC) at 3.28 A peak impulse current (IPP), delivering robust secondary lightning protection per IEC61000-4-5 while maintaining <0.5 µA standby leakage at 28.0 V VWM - essential for low-power sensor and telemetry circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Pulse Power (PPP) | 150 W at 10/1000 µs - sustains high-energy transients without degradation in telecom/data line surge events |
| Working Standoff Voltage (VWM) | 28.0 V - maximum continuous reverse-bias voltage before conduction begins; sets operating margin for 24 V systems |
| Breakdown Voltage (V(BR)) | 31.4 V min at 1 mA - precise avalanche initiation threshold enabling predictable clamping onset |
| Clamping Voltage (VC) | 45.7 V max at 3.28 A IPP - limits downstream voltage stress during surge, protecting 3.3 V–5 V logic interfaces |
| Capacitance (CT) | 4 pF at 0 V - preserves signal integrity up to GHz frequencies in RF antenna feeds and high-speed serial links |
| Junction Temp Range | -55°C to +175°C - supports operation in engine control units, downhole tools, and space-grade electronics |
| Leakage Current (ID) | 0.5 µA max at 28.0 V - minimizes quiescent power loss in battery-powered remote sensors |
Pinout & Package
Package: Axial-leaded, voidless hermetically sealed hard-glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink path during forward conduction | Connected to protected line; conducts only during positive surges relative to cathode |
| Cathode | Reference terminal with polarity band marking | Connected to system ground or common return; defines unidirectional clamping direction |
Key Features
| Feature | Design Value |
|---|---|
| Category 1 metallurgical bond | Internal bond structure qualified for high-reliability applications per MIL-STD-750 Method 2029 |
| Triple-layer passivation | Enhanced surface stability against humidity, contamination, and long-term parameter drift |
| Voidless hermetic seal | Eliminates internal moisture ingress and thermal delamination risk over 20+ year field life |
| Nonsensitive to ESD | Withstands >8 kV HBM per MIL-STD-750 Method 1020 without parameter shift or failure |
| Radiation hardness | Inherently tolerant to total ionizing dose (TID) per Microsemi MicroNote 050 - suitable for LEO missions |
Applications
| Aerospace Avionics Data Links | Industrial Ethernet PHY Protection |
|---|---|
Use Scenario: Protecting ARINC 429 or MIL-STD-1553B bus receivers from induced lightning transients on aircraft wiring harnesses. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed directly at connector interface to limit voltage excursion before signal conditioning circuitry. Use Value: 4 pF capacitance prevents signal rise-time degradation on 1 Mbps differential buses; 150 W rating absorbs multi-kA indirect lightning coupling events. |
Use Scenario: Safeguarding 100BASE-TX or 1000BASE-T PHY transceivers in programmable logic controllers exposed to factory EFT noise. IC Role / Device Role / Timing Role: Line-side transient suppressor on twisted-pair inputs, mounted adjacent to RJ45 magnetics. Use Value: Sub-µA leakage preserves bias stability of transformer-coupled analog front-ends; 45.7 V VC ensures no violation of PHY absolute maximum ratings. |
| Downhole Oilfield Sensor Interfaces | Medical Ultrasound Transducer Arrays |
Use Scenario: Shielding piezoresistive pressure sensors in borehole tools operating at 175°C ambient temperature. IC Role / Device Role / Timing Role: Primary overvoltage protector on analog sensor output lines feeding 24-bit sigma-delta ADCs. Use Value: -55°C to +175°C operational range matches tool thermal envelope; hermetic seal prevents hydrogen-induced parametric shift at depth. |
Use Scenario: Clamping fast-rising echo pulses on 5–15 MHz ultrasound transducer elements connected to receive beamformers. IC Role / Device Role / Timing Role: Low-capacitance transient limiter on element drive/receive paths to preserve pulse fidelity and SNR. Use Value: 4 pF CT avoids resonance with transducer impedance; 31.4 V V(BR) accommodates 20 V peak excitation pulses without false triggering. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ28A | Surface-mount SMB package; 38.9 V VC at 3.8 A IPP; 100 W PPP rating; 15 pF capacitance | Lacks Category 1 bond and radiation hardness; not rated for >150°C operation | Preferred for cost-sensitive industrial PCBs where hermeticity and extreme temp are noncritical |
| 1N6334 | Axial-leaded but non-hermetic epoxy package; 47.1 V VC at 3.2 A IPP; 150 W PPP; 12 pF capacitance | No triple-layer passivation or MIL-STD-750 ESD qualification; limited to 150°C max junction temp | Acceptable for commercial-grade telecom line cards where 4 pF capacitance is not required |
Compared with SMBJ28A and 1N6334, the 1N8163USE3/TR provides uniquely low capacitance (4 pF vs. ≥12 pF), guaranteed hermetic reliability, and extended temperature capability - making it irreplaceable in radiation-exposed, high-frequency, or mission-critical environments where parameter stability over decades is mandatory.
Availability
1N8163USE3/TR is available at Aetrix Electronics and suitable for aerospace avionics, downhole instrumentation, and medical ultrasound systems requiring stable component supply, long-lifecycle support, and traceable sourcing for Class III reliability programs.
Supply support for 1N8163USE3/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for defense, aerospace, and industrial markets, with emphasis on radiation-hardened and hermetically sealed components.
The 1N8163USE3/TR belongs to Microsemi's legacy "LDS" series of low-capacitance TVS diodes, engineered specifically for zero-failure transient protection in high-frequency, high-reliability signal chains where conventional TVS devices introduce unacceptable parasitic loading.
FAQ
What is the clamping voltage of the 1N8163USE3/TR at its rated peak impulse current?
The 1N8163USE3/TR has a maximum clamping voltage (VC) of 45.7 V when subjected to its rated peak impulse current (IPP) of 3.28 A under the standard 10/1000 µs waveform. This value is measured at 25°C ambient and ensures downstream circuitry remains within safe operating limits during surge events. The 1N8163USE3/TR maintains this clamping performance across its full -55°C to +175°C junction temperature range, as confirmed in Microsemi's T4-LDS-xxxx datasheet.
Is the 1N8163USE3/TR suitable for bidirectional transient protection?
No - the 1N8163USE3/TR is strictly unidirectional. For bidirectional protection, Microsemi's datasheet explicitly recommends using two 1N8163USE3/TR devices in anti-parallel configuration (Figure 5), which doubles the effective capacitance to 8 pF. The 1N8163USE3/TR itself contains no internal symmetry and will conduct only in reverse bias above V(BR); forward conduction is blocked by its integrated series rectifier diode.
Does the 1N8163USE3/TR meet IEC61000-4-2 and IEC61000-4-4 standards?
Yes - the 1N8163USE3/TR is specified for ESD protection per IEC61000-4-2 and electrical fast transient (EFT) immunity per IEC61000-4-4. Its 4 pF capacitance, sub-µA leakage, and rapid response time enable effective suppression of ±8 kV contact and ±15 kV air discharge events, as well as 4 kV burst noise. These capabilities are validated in Microsemi's application notes and referenced in the "Applications / Benefits" section of the T4-LDS-xxxx datasheet.
What does the "USE3/TR" suffix indicate in 1N8163USE3/TR?
The "USE3/TR" suffix denotes two key attributes: "U" indicates the axial-leaded "A" package variant; "S" specifies the voidless-hermetically-sealed construction; "e3" certifies RoHS compliance with lead-free matte tin plating; and "TR" signifies tape-and-reel packaging per EIA-296 standards. This full suffix confirms the 1N8163USE3/TR meets Microsemi's highest reliability tier for commercial and industrial applications requiring traceable, environmentally compliant components.
How does the 1N8163USE3/TR achieve its 4 pF capacitance?
The 1N8163USE3/TR achieves 4 pF total capacitance through a proprietary internal architecture that integrates a standard avalanche TVS junction in series with a reverse-oriented rectifier diode - effectively canceling junction capacitance contributions. This dual-junction topology is detailed in Figure 4 of the T4-LDS-xxxx datasheet and is exclusive to Microsemi's LDS series. Unlike single-junction TVS diodes, this configuration enables ultra-low capacitance without sacrificing 150 W peak pulse power handling.
1N8163USE3/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 28V
- Voltage - Breakdown (Min):
- 31.4V
- Voltage - Clamping (Max) @ Ipp:
- 45.7V
- Current - Peak Pulse (10/1000µs):
- 3.28A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8163USE3/TR FAQ
1.How can I place an order for 1N8163USE3/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8163USE3/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8163USE3/TR reliable?
The price and inventory of 1N8163USE3/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8163USE3/TR is usually 5 days.
3.What payment methods are accepted for 1N8163USE3/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8163USE3/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N8163USE3/TR?
1N8163USE3/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8163USE3/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8163USE3/TR?
For technical support, including 1N8163USE3/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8163USE3/TR requirements.
6.How does Aetrix verify that 1N8163USE3/TR is sourced from the original manufacturer or authorized distributors?
All 1N8163USE3/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8163USE3/TR meets industry standards.
7.What is the process for return or replacement of 1N8163USE3/TR?
All 1N8163USE3/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8163USE3/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8163USE3/TR part is unused and in its original packaging.
Return procedure for 1N8163USE3/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8163USE3/TR Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
