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Microchip Technology 1N8163US/TR
- Part No.:
- 1N8163US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8163US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:8,924
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Product details
Overview
1N8163US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) diode designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 31.4 V minimum breakdown voltage (VBR), 28.0 V working standoff voltage (VWM), and ultra-low 4 pF capacitance - enabling ESD/EFT protection in RF front-ends, aerospace data links, and MIL-STD-750-compliant avionics interfaces.
For engineers reviewing the 1N8163US/TR datasheet, 1N8163US/TR pinout, 1N8163US/TR application, or 1N8163US/TR equivalent, key selection criteria include its Category 1 metallurgical bond, hard-glass hermetic seal, low-leakage standby current (≤0.5 µA at 28.0 V), and IEC61000-4-2/4-4 compliance - critical for radiation-hardened and lightning-survivable systems requiring zero-failure tolerance.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve 4 pF total capacitance - the lowest available for a 150 W-rated device. Its clamping behavior is defined by a maximum 45.7 V clamping voltage (VC) at 300 A peak impulse current (IPP), with thermal resistance of 150 °C/W enabling stable operation up to +175 °C junction temperature.
The device uses tungsten slugs and triple-layer passivation within a voidless hard-glass package, meeting MIL-STD-750 Method 1020 for ESD insensitivity and Microsemi MicroNote 050 for inherent radiation hardness. Its axial-leaded "A" package supports thru-hole mounting with cathode band polarity marking and RoHS-compliant matte tin plating.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Pulse Power (10/1000 µs) | 150 W - sustains lightning-induced surges per IEC61000-4-5 Level 3 without degradation |
| Working Standoff Voltage (VWM) | 28.0 V - maximum continuous reverse-biased voltage before leakage exceeds 0.5 µA |
| Breakdown Voltage (VBR) | 31.4 V min @ 1 mA - precise avalanche onset threshold for predictable clamping initiation |
| Clamping Voltage (VC) | 45.7 V max @ 300 A - limits transient overvoltage to safe levels for downstream 3.3 V/5 V logic |
| Capacitance (CT) | 4 pF - preserves signal integrity in >1 GHz RF paths and high-speed serial links |
| Junction Temperature Range | –55 °C to +175 °C - enables deployment in engine control units and space-grade telemetry systems |
| Leakage Current (ID) | ≤0.5 µA @ 28.0 V - minimizes static power loss in battery-powered remote sensors |
Pinout & Package
Package: Axial-leaded "A" hard-glass hermetic case with cathode band marking; 0.060–0.085 inch body diameter (BD), 0.800–1.300 inch lead length (LL); weight ≈340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink input | Connected to protected signal line; conducts surge current during overvoltage events |
| Cathode | Reference/ground return path | Marked with band; tied to system ground or low-impedance reference plane for clamping |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Prevents moisture ingress and internal corrosion over 20+ year field life in harsh environments |
| Category 1 metallurgical bond | Ensures mechanical and thermal stability under shock, vibration, and thermal cycling per MIL-STD-883 |
| Low-capacitance architecture | 4 pF achieved via integrated anti-parallel rectifier - avoids bandwidth-limiting parasitics in RF circuits |
| Triple-layer passivation | Blocks surface conduction paths, reducing leakage drift and improving long-term reliability at high humidity |
| Radiation hardness | Inherently resistant to TID and SEE per Microsemi MicroNote 050 - no derating required in LEO missions |
Applications
| Avionics Data Bus Protection | Aerospace Telemetry Interface |
|---|---|
Use Scenario: Protecting ARINC 429 differential receivers against induced transients from nearby radar pulses and power switching noise. IC Role / Device Role / Timing Role: Unidirectional TVS placed on each data line (D+ and D−) with cathode grounded to chassis. Use Value: 4 pF capacitance prevents signal rise-time degradation while 45.7 V clamping ensures receiver ICs remain below absolute maximum ratings. | Use Scenario: Shielding S-band telemetry downlink receivers from ESD events during ground handling and launch vibration-induced arcing. IC Role / Device Role / Timing Role: Front-end TVS on RF input path prior to low-noise amplifier (LNA), mounted directly at SMA connector feedthrough. Use Value: Hermetic seal and –55 °C to +175 °C rating maintain performance across thermal vacuum cycles; 300 A IPP handles electrostatic discharge up to ±30 kV. |
| MIL-STD-1553B Bus Line Guard | Spacecraft Command Decoder Input |
Use Scenario: Safeguarding bidirectional MIL-STD-1553B data bus stubs against coupling from adjacent power cables and EMP exposure. IC Role / Device Role / Timing Role: Two 1N8163US/TR devices in anti-parallel configuration per line to provide symmetrical clamping. Use Value: Doubled capacitance (8 pF) remains acceptable for 1 Mbps bus speed; Category 1 bond guarantees survivability during qualification vibration testing. | Use Scenario: Protecting command decoder inputs in satellite payload modules from single-event transients induced by cosmic rays. IC Role / Device Role / Timing Role: Standalone unidirectional TVS on each command line, cathode tied to regulated 5 V rail with local 100 nF decoupling. Use Value: Inherent radiation hardness eliminates need for additional shielding or redundancy; <0.5 µA leakage avoids false triggering in low-power sleep modes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ28A | Surface-mount DO-214AB package; 22.0 V VWM, 35.8 V VC @ 22.5 A; 1700 pF capacitance | Not suitable for >100 MHz signal lines due to high capacitance; limited to DC/low-speed digital rails | Select only for cost-sensitive industrial PCBs where layout space is constrained and RF performance is irrelevant |
| 1N6377 | Axial-leaded glass package; 28.0 V VWM, 43.0 V VC @ 300 A; 15 pF capacitance; no Category 1 bond or radiation spec | Lacks hermetic seal and radiation hardness; not qualified for aerospace or defense programs | Acceptable for commercial telecom base stations but requires additional conformal coating and derating for extended temperature operation |
Compared with SMCJ28A and 1N6377, the 1N8163US/TR uniquely combines ultra-low 4 pF capacitance, hermetic reliability, and radiation tolerance - making it irreplaceable in RF-intensive, mission-critical systems where failure is not an option.
Availability
1N8163US/TR is available at Aetrix Electronics and suitable for avionics data bus protection, aerospace telemetry interface hardening, and MIL-STD-1553B bus line guarding requiring stable component supply across extended product lifecycles and obsolescence-sensitive programs.
Supply support for 1N8163US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and radiation-hardened components for defense, aerospace, and industrial markets.
The 1N8163US/TR belongs to Microsemi's legacy TVS family engineered specifically for zero-failure transient protection in military-grade communication systems, where hermetic sealing, low capacitance, and extreme environmental resilience are non-negotiable design requirements.
FAQ
What is the clamping voltage of the 1N8163US/TR at its rated peak impulse current?
The 1N8163US/TR has a maximum clamping voltage (VC) of 45.7 V when subjected to its rated 300 A peak impulse current (IPP) under the standard 10/1000 µs waveform. This value is guaranteed across the full operating temperature range and ensures downstream circuitry remains within safe voltage limits during surge events. The 1N8163US/TR achieves this performance through its optimized avalanche junction and low-impedance internal metallurgy.
Does the 1N8163US/TR meet IEC61000-4-2 and IEC61000-4-4 standards?
Yes, the 1N8163US/TR is explicitly rated for ESD protection per IEC61000-4-2 and electrical fast transient (EFT) immunity per IEC61000-4-4. Its 4 pF capacitance and sub-0.5 µA leakage enable clean integration into high-speed interfaces without compromising test margin. The 1N8163US/TR's performance under these standards is validated in Microsemi's characterization reports and referenced in the T4-LDS-xxxx datasheet revision.
What is the thermal resistance and maximum junction temperature for the 1N8163US/TR?
The 1N8163US/TR has a thermal resistance of 150 °C/W from junction to ambient and a maximum junction temperature of +175 °C. This allows reliable operation in high-temperature environments such as engine bays or sealed avionics enclosures. The 1N8163US/TR's hard-glass construction and tungsten slug design contribute to this robust thermal performance without requiring heatsinking in typical PCB layouts.
Is the 1N8163US/TR RoHS compliant?
Yes, the 1N8163US/TR is RoHS compliant, using matte tin plating over copper leads. The "e3" suffix in Microsemi's nomenclature denotes RoHS compliance, and this version meets EU Directive 2011/65/EU requirements. The 1N8163US/TR retains identical electrical and thermal specifications as its non-RoHS counterpart, with no performance trade-offs introduced by the compliant finish.
How does the 1N8163US/TR achieve its ultra-low 4 pF capacitance?
The 1N8163US/TR achieves 4 pF total capacitance through a proprietary architecture featuring a unique rectifier diode connected in series and opposite polarity to the main TVS junction. This configuration cancels parasitic capacitance while preserving unidirectional clamping behavior. The 1N8163US/TR's low capacitance is measured at zero volts and remains stable across bias conditions - a key differentiator versus conventional TVS diodes.
1N8163US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 28V
- Voltage - Breakdown (Min):
- 31.4V
- Voltage - Clamping (Max) @ Ipp:
- 45.7V
- Current - Peak Pulse (10/1000µs):
- 3.28A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8163US/TR FAQ
1.How can I place an order for 1N8163US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8163US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8163US/TR reliable?
The price and inventory of 1N8163US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8163US/TR is usually 5 days.
3.What payment methods are accepted for 1N8163US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8163US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N8163US/TR?
1N8163US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8163US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8163US/TR?
For technical support, including 1N8163US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8163US/TR requirements.
6.How does Aetrix verify that 1N8163US/TR is sourced from the original manufacturer or authorized distributors?
All 1N8163US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8163US/TR meets industry standards.
7.What is the process for return or replacement of 1N8163US/TR?
All 1N8163US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8163US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8163US/TR part is unused and in its original packaging.
Return procedure for 1N8163US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8163US/TR Tags
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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onsemi
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Diodes Incorporated
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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