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Microchip Technology 1N8164USE3/TR
- Part No.:
- 1N8164USE3/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8164USE3/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
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Product details
Overview
1N8164USE3/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) diode designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 34.2 V minimum breakdown voltage (V(BR)), 30.0 V working standoff voltage (VWM), and ultra-low 4 pF capacitance - enabling ESD/EFT protection in RF front-ends, data lines, and aerospace avionics interfaces.
For engineers reviewing the 1N8164USE3/TR datasheet, 1N8164USE3/TR pinout, 1N8164USE3/TR application, or 1N8164USE3/TR equivalent, key selection criteria include its Category 1 metallurgical bond, RoHS-compliant e3 marking, axial-leaded hard-glass package, and verified IEC61000-4-2/4-4 compliance - critical for mission-critical surge immunity in space-grade and military-grade systems.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve 4 pF total capacitance - significantly lower than standard 150 W TVS devices. Its voidless hermetic glass construction ensures zero moisture ingress and stable parametric performance across -55°C to +175°C junction temperature.
The device operates as a unidirectional clamp with 49.9 V maximum clamping voltage (VC) at 3.01 A peak impulse current (IPP), and exhibits 0.099 %/°C temperature coefficient of breakdown voltage. It supports steady-state power dissipation up to 1.0 W at 25°C ambient with 150 °C/W thermal resistance junction-to-ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 30.0 V - Maximum continuous reverse-biased operating voltage before leakage exceeds 0.5 µA; defines safe signal swing margin for protected lines. |
| V(BR) min | 34.2 V - Minimum avalanche breakdown voltage at 1 mA test current; guarantees turn-on threshold under worst-case process variation. |
| VC @ IPP | 49.9 V - Clamping voltage at 3.01 A peak impulse (10/1000 µs); determines maximum voltage seen by downstream IC during surge event. |
| CT | 4 pF - Total small-signal capacitance at 0 V; enables use on >1 GHz RF paths without signal integrity degradation. |
| PPP | 150 W - Peak pulse power rating per 10/1000 µs waveform; validates robustness against lightning-induced transients per IEC61000-4-5 Level 3. |
| TJ range | -55°C to +175°C - Full operational junction temperature range; supports deployment in engine control units and satellite power conditioning modules. |
| αV(BR) | 0.099 %/°C - Temperature coefficient of breakdown voltage; enables accurate clamping voltage prediction across thermal extremes. |
Pinout & Package
Package: Axial-leaded, voidless hermetically sealed hard-glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg; dimensions per Microsemi T4-LDS-xxxx spec (BD: 0.060–0.085", LL: 0.800–1.300").
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Input terminal for transient energy absorption | Connected to protected signal line; conducts surge current toward cathode during overvoltage events. |
| Cathode | Clamped output terminal | Connected to ground or low-impedance return path; defines reference for VWM and VC ratings. |
Key Features
| Feature | Design Value |
|---|---|
| Category 1 metallurgical bond | Internal high-reliability bond qualified per MIL-STD-750 Method 2029; eliminates interfacial delamination risk in thermal cycling environments. |
| Voidless hermetic seal | Zero internal voids in glass encapsulation; prevents moisture-induced parameter drift and corrosion failure over 20+ year service life. |
| Triple-layer passivation | SiO₂/Si₃N₄/SiO₂ stack over junction; blocks surface contamination and ion migration, ensuring stable leakage <0.5 µA at VWM. |
| Low-capacitance architecture | 4 pF CT achieved via integrated series rectifier; preserves signal rise time and bandwidth in 100 Mbps+ digital interfaces. |
| Radiation hardness | Inherently radiation-tolerant per Microsemi MicroNote 050; validated for total ionizing dose (TID) >100 krad(Si) without parameter shift. |
Applications
| Avionics Data Bus Protection | Satellite RF Front-End Protection |
|---|---|
Use Scenario: Protecting ARINC 429 or MIL-STD-1553B differential data lines from induced lightning transients in airborne platforms. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed directly at connector interface to limit common-mode surges before signal conditioning circuitry. Use Value: 4 pF capacitance avoids signal distortion on 1 MHz clock/data edges; 150 W PPP withstands DO-160 Section 22 Level 4 induced transients. |
Use Scenario: Shielding L-band (1–2 GHz) LNAs and mixers in phased-array satellite receivers from ESD and antenna-coupled EFT. IC Role / Device Role / Timing Role: Low-capacitance shunt protector mounted adjacent to RF port to minimize parasitic impedance discontinuity. Use Value: 4 pF CT maintains VSWR <1.5:1 up to 2.5 GHz; hermetic seal prevents outgassing-induced noise degradation in vacuum operation. |
| Military Vehicle Power Interface | Nuclear Instrumentation Signal Conditioning |
Use Scenario: Safeguarding CAN FD and FlexRay bus transceivers in armored vehicle ECUs exposed to load-dump and ISO 7637-2 Pulse 5a. IC Role / Device Role / Timing Role: Primary transient suppressor on 12 V/24 V supply rail feeding communication modules. Use Value: 30.0 V VWM aligns with automotive battery nominal range; 49.9 V VC limits rail overshoot below 50 V absolute maximum for 3.3 V/5 V logic. |
Use Scenario: Protecting gamma spectrometer preamplifier inputs from electrostatic discharge during handling in nuclear facility maintenance bays. IC Role / Device Role / Timing Role: First-stage ESD guard on high-impedance detector bias line (10⁹ Ω input) prior to charge-sensitive amplifier. Use Value: <0.5 µA ID at VWM prevents DC offset error in ultra-low-current measurement; radiation hardness ensures stability near reactor cores. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ33A | Surface-mount SMC package; 33 V VWM; 53.3 V VC @ 4.3 A; 6.5 pF CT; 1500 W PPP but lower reliability grade. | Designed for commercial industrial PCBs; lacks Category 1 bond, hermetic seal, and radiation tolerance. | Select when cost, board space, or automated assembly outweigh mission-critical reliability requirements. |
| 1N6375 | Axial-leaded, non-hermetic epoxy package; 33 V VWM; 53.3 V VC @ 4.3 A; 15 pF CT; no radiation qualification or MIL-STD-750 testing. | General-purpose surge protection in non-aerospace consumer/marine electronics; unsuitable for vacuum or high-TID environments. | Choose only for non-safety-critical applications where 4 pF capacitance and long-term hermetic stability are not required. |
Compared with SMCJ33A and 1N6375, the 1N8164USE3/TR provides uniquely low 4 pF capacitance and proven hermetic reliability - making it irreplaceable for RF-sensitive, radiation-exposed, or long-lifecycle deployments where field failure is unacceptable.
Availability
1N8164USE3/TR is available at Aetrix Electronics and suitable for avionics data bus protection, satellite RF front-end protection, and military vehicle power interface applications requiring stable component supply across extended product lifecycles and rigorous environmental certification.
Supply support for 1N8164USE3/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for aerospace, defense, and industrial markets.
The 1N8164USE3/TR belongs to Microsemi's legacy "LDS" series of hermetically sealed TVS diodes, engineered specifically for mission-critical transient protection where failure is not an option - including spaceflight, nuclear instrumentation, and airborne radar systems.
FAQ
What is the clamping voltage of the 1N8164USE3/TR at its rated peak impulse current?
The 1N8164USE3/TR has a maximum clamping voltage (VC) of 49.9 V at 3.01 A peak impulse current (IPP), measured using the standard 10/1000 µs waveform. This value ensures protected circuits remain within safe voltage limits during surge events. The 1N8164USE3/TR achieves this while maintaining only 4 pF capacitance - a key differentiator versus higher-capacitance alternatives. Its low VC directly supports compatibility with 3.3 V and 5 V logic interfaces.
Is the 1N8164USE3/TR suitable for space applications?
Yes, the 1N8164USE3/TR is inherently radiation-hardened per Microsemi MicroNote 050 and qualified with Category 1 metallurgical bonds and voidless hermetic packaging - both essential for space-grade reliability. The 1N8164USE3/TR operates across -55°C to +175°C and exhibits no parametric shift after total ionizing dose exposure >100 krad(Si). Its RoHS-compliant e3 marking also meets ESA ESCC specifications for launch vehicle electronics.
Does the 1N8164USE3/TR meet IEC61000-4-2 and IEC61000-4-4 standards?
Yes, the 1N8164USE3/TR is explicitly rated for ESD protection per IEC61000-4-2 and electrical fast transient (EFT) immunity per IEC61000-4-4, as confirmed in the official Microsemi T4-LDS-xxxx datasheet. Its 4 pF capacitance and sub-0.5 µA leakage at 30 V VWM enable effective high-speed transient capture without loading sensitive inputs. The 1N8164USE3/TR's performance is validated under full standard test conditions, not just typical values.
What does the "USE3/TR" suffix indicate in 1N8164USE3/TR?
The "USE3/TR" suffix denotes two key attributes of the 1N8164USE3/TR: "U" indicates the axial-leaded "A" package variant; "S" specifies surface-mount compatible lead finish (matte tin per RoHS); "e3" certifies RoHS compliance per JEDEC J-STD-609; and "TR" signifies tape-and-reel packaging per EIA-296 standard. This full designation confirms the 1N8164USE3/TR is a RoHS-compliant, tape-and-reel supplied, axial-leaded TVS diode meeting aerospace-grade processing controls.
How does the 1N8164USE3/TR achieve 4 pF capacitance while delivering 150 W peak power?
The 1N8164USE3/TR achieves 4 pF capacitance through a proprietary internal architecture that integrates a rectifier diode in series and opposite polarity to the main TVS junction - effectively canceling junction capacitance while preserving avalanche energy-handling capability. This dual-junction design is documented in Figure 4 of the Microsemi T4-LDS-xxxx datasheet. The 1N8164USE3/TR maintains full 150 W peak pulse power (10/1000 µs) without compromising low-capacitance performance, unlike conventional single-junction TVS devices.
1N8164USE3/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 30V
- Voltage - Breakdown (Min):
- 34.2V
- Voltage - Clamping (Max) @ Ipp:
- 49.9V
- Current - Peak Pulse (10/1000µs):
- 3.01A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8164USE3/TR FAQ
1.How can I place an order for 1N8164USE3/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8164USE3/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8164USE3/TR reliable?
The price and inventory of 1N8164USE3/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8164USE3/TR is usually 5 days.
3.What payment methods are accepted for 1N8164USE3/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8164USE3/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N8164USE3/TR?
1N8164USE3/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8164USE3/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8164USE3/TR?
For technical support, including 1N8164USE3/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8164USE3/TR requirements.
6.How does Aetrix verify that 1N8164USE3/TR is sourced from the original manufacturer or authorized distributors?
All 1N8164USE3/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8164USE3/TR meets industry standards.
7.What is the process for return or replacement of 1N8164USE3/TR?
All 1N8164USE3/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8164USE3/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8164USE3/TR part is unused and in its original packaging.
Return procedure for 1N8164USE3/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8164USE3/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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Diodes Incorporated
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