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Microchip Technology 1N8164US/TR
- Part No.:
- 1N8164US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8164US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:3,739
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Product details
Overview
1N8164US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, features 4 pF capacitance, and has a 34.2 V working standoff voltage (VWM) with 49.9 V maximum clamping voltage (VC) at 3.01 A IPP.
For engineers reviewing the 1N8164US/TR datasheet, 1N8164US/TR pinout, 1N8164US/TR application, or 1N8164US/TR equivalent, key selection criteria include low-capacitance ESD/EFT protection per IEC61000-4-2/4-4, Category 1 metallurgical bond reliability, and axial-leaded hard-glass package suitability for aerospace, defense, and telecom infrastructure.
Technical Context
The 1N8164US/TR integrates a unique rectifier diode in series and opposite polarity to the TVS junction to achieve ultra-low 4 pF capacitance-critical for preserving signal integrity above 100 MHz. Its voidless hermetic glass construction ensures zero moisture ingress and stable parametric performance across -55°C to +175°C junction temperature.
It operates as a unidirectional clamp with 34.2 V VWM and 49.9 V VC at 3.01 A IPP, rated for 150 W peak pulse power under 10/1000 µs waveform. The device uses tungsten slugs and internal Category 1 metallurgical bonds for radiation hardness and MIL-STD-750 ESD insensitivity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 34.2 V - Maximum continuous reverse-bias voltage before clamping begins; sets operating margin for protected lines. |
| VC @ IPP | 49.9 V at 3.01 A - Clamped voltage during 10/1000 µs surge; defines worst-case stress on downstream ICs. |
| PPP | 150 W - Peak transient energy handling capability; supports lightning-level surges per IEC61000-4-5. |
| CT | 4 pF - Total terminal capacitance at 0 V; enables use in >100 MHz RF/data paths without signal distortion. |
| TJ Range | -55°C to +175°C - Full military-grade junction temperature range; validated for space-grade thermal cycling. |
| RθJA | 150°C/W - Thermal resistance from junction to ambient; requires minimal PCB copper for steady-state 1.0 W dissipation. |
| ID @ VWM | 0.5 µA - Standby leakage current at rated standoff voltage; negligible loading on high-impedance sensor inputs. |
Pinout & Package
Package: Axial-leaded, voidless hermetically sealed hard glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink path during forward conduction | Connected to protected line; conducts only during overvoltage events exceeding VWM. |
| Cathode | Reference node for clamping action | Connected to system ground or common reference; establishes polarity-specific protection direction. |
Key Features
| Feature | Design Value |
|---|---|
| Low capacitance architecture | 4 pF achieved via integrated anti-series rectifier diode-enables protection of USB 3.0, HDMI, and RF front-ends without bandwidth loss. |
| Category 1 metallurgical bond | Internal high-reliability bond structure qualified for mission-critical applications including avionics and satellite systems. |
| Hermetic glass sealing | Zero voids and moisture barrier ensure long-term parameter stability under humidity, thermal shock, and vacuum conditions. |
| IEC61000-4-2/4-4 compliance | Validated for ±8 kV contact / ±15 kV air ESD and 4 kV EFT burst immunity-meets industrial and telecom immunity standards. |
Applications
| High-Speed Data Line Protection | Satellite Communication Front-Ends |
|---|---|
Use Scenario: Protecting RS-422/RS-485 differential pairs in ground station telemetry links exposed to induced lightning transients. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between data line and chassis ground to shunt surges while preserving 20+ Mbps signal fidelity. Use Value: 4 pF capacitance prevents rise-time degradation; 49.9 V clamping limits receiver IC stress below absolute maximum ratings. | Use Scenario: Shielding L-band RF receive paths in low-earth orbit (LEO) payloads from electrostatic discharge during launch and orbital operations. IC Role / Device Role / Timing Role: Transient suppression on antenna feedlines prior to low-noise amplifier input, maintaining noise figure and gain flatness. Use Value: Hermetic glass package withstands outgassing and thermal vacuum; Category 1 bond ensures survivability after 100k thermal cycles. |
| Aerospace Avionics Sensor Interfaces | Defense Radar Pulse Modulators |
Use Scenario: Safeguarding analog pressure/temperature sensor outputs in fly-by-wire control units subjected to HIRF and lightning-induced coupling. IC Role / Device Role / Timing Role: Low-leakage (0.5 µA) TVS on 0–5 V sensor rails to prevent false readings or ADC saturation during transients. Use Value: Sub-microamp standby current avoids sensor output offset; -55°C to +175°C rating matches engine bay thermal envelope. | Use Scenario: Protecting gate drive signals in solid-state radar modulators where fast switching edges are vulnerable to EFT-induced latch-up. IC Role / Device Role / Timing Role: Clamp on isolated gate driver outputs to suppress 4 kV EFT bursts without distorting <10 ns rise times. Use Value: 150 W peak power rating absorbs repetitive EFT energy; 4 pF capacitance preserves edge integrity up to 500 MHz. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ33A | Surface-mount SMC package; 33 V VWM; 53.3 V VC @ 3.1 A; 6.5 pF capacitance. | Higher capacitance limits use in >50 MHz circuits; lacks hermetic seal and Category 1 bond. | Select when board space is constrained and full military reliability is not required. |
| 1N6322 | Axial-leaded, 33 V VWM, 53.3 V VC @ 2.8 A, but 10 pF capacitance and non-hermetic epoxy package. | Not suitable for vacuum or high-humidity environments; lower ESD robustness per MIL-STD-750. | Choose for cost-sensitive commercial designs where 4 pF and hermeticity are non-critical. |
Compared with SMCJ33A and 1N6322, the 1N8164US/TR provides superior high-frequency performance and environmental resilience due to its 4 pF capacitance, voidless hermetic glass construction, and Category 1 metallurgical bonding-making it the only option qualified for space-grade and nuclear-hardened systems.
Availability
1N8164US/TR is available at Aetrix Electronics and suitable for aerospace avionics, satellite communications, and defense radar systems requiring stable component supply with guaranteed long-term availability and traceable sourcing.
Supply support for 1N8164US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and secure analog/mixed-signal solutions for aerospace, defense, and industrial markets.
The 1N8164US/TR belongs to Microsemi's legacy 1N81xx series of hermetic TVS diodes, engineered specifically for mission-critical transient protection where failure is not an option-emphasizing parametric stability, ESD immunity, and extreme environmental survivability.
FAQ
What is the clamping voltage of the 1N8164US/TR at its rated peak pulse current?
The 1N8164US/TR has a maximum clamping voltage (VC) of 49.9 V at 3.01 A peak impulse current (IPP), measured under the standard 10/1000 µs waveform. This value defines the upper voltage limit imposed on protected circuitry during a surge event and is critical for ensuring downstream ICs remain within their absolute maximum ratings. The 1N8164US/TR maintains this clamping performance across its full operating temperature range.
Is the 1N8164US/TR suitable for bidirectional transient protection?
No-the 1N8164US/TR is a unidirectional TVS diode. For bidirectional protection, two 1N8164US/TR devices must be connected in anti-parallel configuration, as documented in Microsemi's Figure 5. This arrangement doubles the effective capacitance to 8 pF but retains the same clamping behavior in both polarities. The 1N8164US/TR itself does not provide symmetrical breakdown in reverse bias.
Does the 1N8164US/TR meet RoHS requirements?
Yes-the "e3" suffix in the full part number designation (as indicated in the nomenclature table) confirms that the 1N8164US/TR is RoHS compliant, using matte tin plating over copper leads. This version replaces lead-based terminations while maintaining identical electrical and mechanical specifications, including hermetic sealing and Category 1 metallurgical bonding.
What is the thermal resistance and steady-state power rating of the 1N8164US/TR?
The 1N8164US/TR has a thermal resistance of 150°C/W (junction-to-ambient) and a steady-state average power rating of 1.0 W at TA = 25°C. This means it can continuously dissipate up to 1 W when mounted on a PCB with adequate thermal management-such as minimum 1-inch² copper pour-to prevent junction temperature from exceeding +175°C. Derating is required above 25°C ambient, per Figure 3 in the datasheet.
How does the 4 pF capacitance of the 1N8164US/TR compare to standard TVS diodes?
The 4 pF capacitance of the 1N8164US/TR is among the lowest available for a 150 W-rated TVS diode-typically 3–5× lower than conventional axial or SMC-packaged TVS devices. This is achieved via Microsemi's proprietary series-anti-parallel diode architecture, enabling use in high-speed interfaces like LVDS, USB 2.0, and RF front-ends where even 10–15 pF would degrade signal integrity. Standard TVS diodes in this power class usually measure 10–25 pF.
1N8164US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 30V
- Voltage - Breakdown (Min):
- 34.2V
- Voltage - Clamping (Max) @ Ipp:
- 49.9V
- Current - Peak Pulse (10/1000µs):
- 3.01A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8164US/TR FAQ
1.How can I place an order for 1N8164US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8164US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8164US/TR reliable?
The price and inventory of 1N8164US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8164US/TR is usually 5 days.
3.What payment methods are accepted for 1N8164US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8164US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N8164US/TR?
1N8164US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8164US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8164US/TR?
For technical support, including 1N8164US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8164US/TR requirements.
6.How does Aetrix verify that 1N8164US/TR is sourced from the original manufacturer or authorized distributors?
All 1N8164US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8164US/TR meets industry standards.
7.What is the process for return or replacement of 1N8164US/TR?
All 1N8164US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8164US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8164US/TR part is unused and in its original packaging.
Return procedure for 1N8164US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8164US/TR Tags
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Toshiba Semiconductor and Storage
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