My Inquiry
My Account
Microchip Technology 1N8165US
- Part No.:
- 1N8165US
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8165US.pdf
- Description:
- TVS DIODE 33VWM 53.6VC
- Quantity:
- Payment:
- Shipping:
Inventory:9,540
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
1N8165US from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 37.1 V minimum breakdown voltage, 33.0 V working standoff voltage, 53.6 V maximum clamping voltage at 300 A peak impulse current, and 4 pF capacitance. It delivers 150 W peak pulse power (10/1000 µs), operates from –55 °C to +175 °C, and uses hard-glass construction with Category 1 metallurgical bonds for high-reliability aerospace and defense signal-line protection.
For engineers reviewing the 1N8165US datasheet, 1N8165US pinout, 1N8165US application, or 1N8165US equivalent, key selection criteria include its ultra-low 4 pF capacitance, 33.0 V standoff rating, 53.6 V clamping performance under 300 A surge, hermetic glass MELF package robustness, and compliance with IEC61000-4-2/4-4/4-5 for ESD, EFT, and secondary lightning protection.
Technical Context
The 1N8165US implements a unique series-connected rectifier diode architecture opposite the TVS junction to achieve 4 pF total capacitance-lowest in its 150 W class. This configuration enables high-frequency signal integrity while maintaining unidirectional surge suppression capability.
It is rated for 300 A peak impulse current (IPP) at 10/1000 µs waveform, with clamping voltage fixed at ≤53.6 V and thermal resistance of 150 °C/W. Its Category 1 internal metallurgical bond and voidless hermetic seal meet MIL-STD-750 requirements for radiation hardness and long-term reliability in harsh environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Breakdown Voltage (VBR) | 37.1 V min @ 1 mA - ensures reliable conduction onset above 33.0 V operating voltage |
| Working Standoff Voltage (VWM) | 33.0 V max - defines maximum continuous reverse-bias voltage before leakage exceeds 0.5 µA |
| Clamping Voltage (VC) | 53.6 V max @ 300 A (10/1000 µs) - limits downstream circuit stress during surge events |
| Peak Pulse Power (PPP) | 150 W @ 25 °C - sustains high-energy transients without failure in short-duration spikes |
| Capacitance (CT) | 4 pF @ 0 V - preserves signal integrity in >1 GHz RF/data lines (e.g., GPS, radar front-ends) |
| Junction Temperature Range | –55 °C to +175 °C - supports operation in extended-temperature avionics and downhole electronics |
| Surge Current (IPP) | 300 A (10/1000 µs) - withstands high-current lightning-induced surges per IEC61000-4-5 Level 3 |
Pinout & Package
Package: "A" SQ-MELF surface-mount hermetically sealed voidless hard-glass case with tungsten slugs and tin/lead or RoHS-compliant matte tin plating over copper terminals; cathode band polarity marking; weight ≈539 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current entry point during reverse-bias surge | Connected to protected line; conducts only when VWM exceeded |
| Cathode | Transient current exit point to ground reference | Marked by band; must be tied to low-impedance ground path for effective clamping |
Key Features
| Feature | Design Value |
|---|---|
| Series rectifier + TVS topology | Enables 4 pF capacitance-lowest in 150 W class-without sacrificing surge rating |
| Category 1 metallurgical bond | Ensures mechanical and thermal stability under shock, vibration, and thermal cycling per MIL-STD-750 |
| Voidless hermetic glass seal | Prevents moisture ingress and parameter drift over 20+ year service life in sealed modules |
| Triple-layer passivation | Blocks surface contamination and leakage paths in high-humidity or salt-fog environments |
| IEC61000-4-2/4-4/4-5 compliance | Validated for ±15 kV contact / ±20 kV air ESD, 4 kV EFT, and 2 kV line-to-ground lightning surge |
Applications
| GPS Receiver Front-End Protection | Aerospace Data Bus Line Protection |
|---|---|
Use Scenario: Protecting L1-band (1.575 GHz) antenna feedlines from ESD and nearby lightning-induced transients in airborne GPS receivers. IC Role / Device Role / Timing Role: Unidirectional TVS placed between antenna port and LNA input to clamp surges while preserving RF signal fidelity. Use Value: 4 pF capacitance minimizes insertion loss and VSWR shift at 1.575 GHz; 53.6 V clamping prevents LNA damage during ±15 kV ESD events. | Use Scenario: Safeguarding ARINC 429 or MIL-STD-1553B data lines against induced surges in flight control computers. IC Role / Device Role / Timing Role: Point-of-entry TVS on each differential data line, grounded to chassis to shunt common-mode transients. Use Value: 300 A surge rating handles fast-rising transients from motor drives or power switching; hermetic seal prevents corrosion in humid cabin environments. |
| Downhole Telemetry Interface | Radiation-Hardened Sensor Signal Conditioning |
Use Scenario: Protecting analog sensor outputs (e.g., pressure, temperature) in oil/gas well logging tools exposed to high ambient temperatures and ESD. IC Role / Device Role / Timing Role: Low-leakage TVS on 4–20 mA loop inputs to suppress transients without affecting precision current measurement. Use Value: 0.5 µA max standby current at 33.0 V avoids loading error; 175 °C max junction temperature enables operation at 150 °C ambient. | Use Scenario: Shielding op-amp inputs in satellite star tracker sensors from single-event transients and total ionizing dose effects. IC Role / Device Role / Timing Role: Input-stage TVS on focal plane array bias lines to prevent latch-up and parametric shift in radiation environments. Use Value: Inherent radiation hardness per MicroNote 050 eliminates need for additional shielding; Category 1 bond resists displacement under proton irradiation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ33A | 33 V standoff, 53.3 V clamping @ 30.2 A, 600 W rating, 100 pF capacitance, DO-214AA package | Higher capacitance degrades >100 MHz signal integrity; plastic package lacks hermeticity and radiation tolerance | Select only for cost-sensitive commercial systems where 100 pF and non-hermetic construction are acceptable |
| 1N6107AUS | 33 V standoff, 53.3 V clamping @ 300 A, 4 pF, same SQ-MELF package, but lower surge rating (100 W) and no Category 1 bond | Lacks Category 1 metallurgical bond and voidless seal; not qualified for MIL-STD-750 Method 1020 ESD testing | Acceptable for industrial-grade systems requiring low capacitance but not aerospace-level reliability |
Compared with SMBJ33A and 1N6107AUS, the 1N8165US uniquely combines 4 pF capacitance, 150 W surge rating, hermetic SQ-MELF packaging, and Category 1 metallurgical bonding-making it the only option qualified for mission-critical avionics and space-grade telemetry interfaces.
Availability
1N8165US is available at Aetrix Electronics and suitable for GPS receiver front-ends, aerospace data bus protection, and downhole telemetry interfaces requiring stable component supply across extended temperature and radiation environments.
Supply support for 1N8165US includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened, hermetic, and extended-temperature solutions.
The 1N8165US belongs to Microsemi's legacy high-reliability TVS family engineered specifically for mission-critical transient protection in MIL-PRF-19500/530-qualified systems where failure is not an option.
FAQ
What is the clamping voltage of the 1N8165US at its rated peak impulse current?
The 1N8165US has a maximum clamping voltage (VC) of 53.6 V when subjected to its rated 300 A peak impulse current (IPP) under the standard 10/1000 µs waveform. This value is measured at TA = 25 °C and guarantees predictable voltage limiting during surge events. The 1N8165US maintains this clamping performance across its full operating temperature range due to its stable silicon junction and hermetic construction.
Is the 1N8165US RoHS compliant?
Yes, the 1N8165US is available in RoHS-compliant versions marked with the "e3" suffix (e.g., 1N8165US e3), featuring matte tin plating over copper terminals. Non-RoHS versions use tin/lead plating. Both variants share identical electrical specifications, thermal performance, and hermetic glass packaging-only the terminal finish differs to meet environmental compliance requirements.
Does the 1N8165US support bidirectional transient protection?
No, the 1N8165US is strictly unidirectional. Bidirectional protection requires two 1N8165US devices mounted in anti-parallel configuration, as documented in Figure 5 of the datasheet. This arrangement doubles the effective capacitance to 8 pF but provides symmetrical clamping for AC-coupled or differential signal lines where polarity reversal occurs.
What is the thermal resistance of the 1N8165US, and how does it affect power dissipation?
The 1N8165US has a thermal resistance junction-to-ambient (RθJA) of 150 °C/W. At 25 °C ambient, this allows 1.0 W steady-state power dissipation before reaching its 175 °C maximum junction temperature. For pulsed operation, the 150 W peak pulse power rating applies only for short durations (≤10 ms); sustained average power must remain within the 1.0 W limit to avoid thermal runaway.
How does the 1N8165US achieve its ultra-low 4 pF capacitance?
The 1N8165US achieves 4 pF capacitance via a proprietary series-connected rectifier diode placed opposite the TVS junction-effectively canceling junction capacitance while retaining unidirectional surge conduction. This architecture is exclusive to Microsemi's voidless-hermetic SQ-MELF TVS family and is validated across all 1N8149US–1N8182US variants, including the 1N8165US.
1N8165US Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 33V
- Voltage - Breakdown (Min):
- 37.1V
- Voltage - Clamping (Max) @ Ipp:
- 53.6V
- Current - Peak Pulse (10/1000µs):
- 2.8A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- -
1N8165US FAQ
1.How can I place an order for 1N8165US through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8165US on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8165US reliable?
The price and inventory of 1N8165US are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8165US is usually 5 days.
3.What payment methods are accepted for 1N8165US?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8165US transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N8165US?
1N8165US orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8165US order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8165US?
For technical support, including 1N8165US datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8165US requirements.
6.How does Aetrix verify that 1N8165US is sourced from the original manufacturer or authorized distributors?
All 1N8165US products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8165US meets industry standards.
7.What is the process for return or replacement of 1N8165US?
All 1N8165US units undergo pre-shipment inspection (PSI). If there is an issue with 1N8165US, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8165US part is unused and in its original packaging.
Return procedure for 1N8165US:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8165US Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
