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Microchip Technology 1N8165USE3/TR
- Part No.:
- 1N8165USE3/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8165USE3/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:3,691
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Product details
Overview
1N8165USE3/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) diode with 33.0 V working standoff voltage (VWM), 53.6 V clamping voltage (VC) at 300 A peak impulse current, 4 pF capacitance, and 150 W peak pulse power rating at 10/1000 µs. It features internal Category 1 metallurgical bonds and triple-layer passivation for high-reliability aerospace and defense signal-line protection.
For engineers reviewing the 1N8165USE3/TR datasheet, 1N8165USE3/TR pinout, 1N8165USE3/TR application, or 1N8165USE3/TR equivalent, key selection criteria include low-capacitance ESD suppression in RF front-ends, IEC61000-4-2/4-4 compliance, axial-leaded through-hole mounting, and radiation-hardened construction per MicroNote 050.
Technical Context
This TVS uses a unique series-connected rectifier diode in anti-parallel configuration to achieve ultra-low 4 pF capacitance while maintaining unidirectional clamping behavior. Its hard-glass hermetic package enables operation from –55 °C to +175 °C junction temperature with 150 °C/W thermal resistance.
The device delivers 300 A peak surge current (IPP) at 10/1000 µs waveform with 0.01% impulse repetition rate, and exhibits 0.100 %/°C breakdown voltage temperature coefficient. It supports secondary lightning protection per select IEC61000-4-5 levels and meets MIL-STD-750 Method 1020 for ESD insensitivity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 33.0 V - Maximum continuous reverse standoff voltage before conduction begins |
| VC @ IPP=300 A | 53.6 V - Clamped voltage during 10/1000 µs surge, limiting stress on protected ICs |
| CT | 4 pF - Enables use in >1 GHz RF circuits without signal integrity degradation |
| PPP | 150 W - Peak transient energy absorption capability at 25 °C ambient |
| TJ Range | –55 °C to +175 °C - Supports operation in extreme environmental conditions |
| αV(BR) | 0.100 %/°C - Predictable breakdown voltage drift over temperature for stable protection threshold |
| RθJA | 150 °C/W - Thermal performance baseline for PCB layout and heatsinking design |
Pinout & Package
Package: Axial-leaded, voidless-hermetically-sealed hard glass case with tungsten slugs; RoHS-compliant matte tin plating over copper leads; cathode band marking; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current entry point under reverse surge | Connected to protected line; conducts only when voltage exceeds VWM |
| Cathode | Clamped output node | Connected to ground or reference rail; defines polarity of unidirectional protection |
Key Features
| Feature | Design Value |
|---|---|
| Low capacitance architecture | 4 pF achieved via integrated anti-parallel rectifier diode, enabling RF and high-speed data line protection |
| Category 1 metallurgical bond | Internal bond structure qualified for high-reliability applications including space and military systems |
| Triple-layer passivation | Enhanced surface stability against moisture, contamination, and long-term parametric drift |
| Hermetic glass seal | Zero voids prevent internal corrosion and ensure lifetime reliability under thermal cycling and humidity stress |
| Radiation hardness | Inherently radiation-tolerant per Microsemi MicroNote 050, suitable for low-dose space environments |
Applications
| Radar Front-End Protection | Satellite Telemetry Interface |
|---|---|
Use Scenario: Protecting L-band RF receiver inputs from ESD and lightning-induced transients in airborne radar systems. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed directly at antenna feedpoint to shunt surges before low-noise amplifier input. Use Value: 4 pF capacitance prevents RF insertion loss and phase distortion; 53.6 V clamping ensures LNA survival under MIL-STD-461 CS114 pulses. | Use Scenario: Safeguarding S-band telemetry downlink receivers on LEO satellites during launch and orbital operations. IC Role / Device Role / Timing Role: Standoff-rated transient suppressor on differential RS-422 lines interfacing with FPGA-based frame synchronizers. Use Value: –55 °C to +175 °C operating range accommodates thermal vacuum cycling; radiation tolerance avoids single-event latchup. |
| Military Radio Transceiver | Avionics Data Bus Interface |
Use Scenario: ESD protection on HF/VHF antenna ports of manpack radios subjected to field handling and static discharge. IC Role / Device Role / Timing Role: Primary-level surge suppressor mounted at SMA connector interface, upstream of bandpass filtering. Use Value: 150 W peak pulse power withstands multiple IEC61000-4-2 contact discharges; axial leads enable robust mechanical strain relief. | Use Scenario: Transient suppression on ARINC 429 receive lines in flight control computers exposed to induced transients from actuator switching. IC Role / Device Role / Timing Role: Unidirectional clamping device on isolated bus receivers to limit voltage excursions during load dump events. Use Value: 33.0 V VWM matches ARINC 429 nominal 10 V differential swing with sufficient margin; 0.5 µA ID minimizes DC loading. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ33A | Surface-mount DO-214AB package; 36.7 V VWM; 53.3 V VC @ 24.9 A; 6.5 pF capacitance | Lower surge rating (1500 W vs. 150 W), but higher capacitance limits RF use | Preferred for automated SMT assembly where board space is constrained and RF bandwidth < 500 MHz |
| 1N6332A | Axial-leaded DO-41; 33 V VWM; 53.3 V VC @ 28.3 A; 100 pF capacitance | Higher capacitance precludes high-frequency signal paths; lower IPP (28.3 A vs. 300 A) | Cost-effective alternative for non-RF industrial control I/O where clamping speed is less critical |
Compared with 1N8165USE3/TR, SMCJ33A offers higher surge capacity but compromises RF integrity due to 6.5 pF capacitance, while 1N6332A provides identical VWM but lacks the low-capacitance architecture and radiation hardness needed for aerospace-grade designs.
Availability
1N8165USE3/TR is available at Aetrix Electronics and suitable for radar front-end protection, satellite telemetry interfaces, and military radio transceivers requiring stable component supply across extended temperature ranges and high-reliability qualification.
Supply support for 1N8165USE3/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-tolerant, and security-focused analog and mixed-signal solutions.
The 1N8149–1N8182 series was designed specifically for mission-critical transient suppression in aerospace, defense, and industrial systems where failure is not an option-emphasizing hermeticity, low capacitance, and extreme environmental resilience.
FAQ
What is the working standoff voltage (VWM) of the 1N8165USE3/TR?
The 1N8165USE3/TR has a working standoff voltage (VWM) of 33.0 V, meaning it remains non-conductive up to this DC or repetitive peak reverse voltage. This value is confirmed in the Electrical Characteristics table on page 3 of the Microsemi T4-LDS-xxxx datasheet, where 1N8165 is explicitly listed with VWM = 33.0 V at 25 °C ambient.
Does the 1N8165USE3/TR meet IEC61000-4-2 ESD immunity requirements?
Yes, the 1N8165USE3/TR is specified for ESD protection per IEC61000-4-2 in the Applications/Benefits section of the datasheet. Its 4 pF capacitance and fast response enable effective clamping of ±8 kV contact and ±15 kV air discharge events without degrading high-frequency signal integrity in protected circuits.
What is the maximum clamping voltage (VC) of the 1N8165USE3/TR at rated surge current?
The 1N8165USE3/TR has a maximum clamping voltage (VC) of 53.6 V at 300 A peak impulse current (IPP) under 10/1000 µs waveform conditions. This value is documented in the Electrical Characteristics table on page 3 of the Microsemi datasheet and defines the upper voltage limit imposed on protected circuitry during surge events.
Is the 1N8165USE3/TR suitable for high-temperature environments?
Yes, the 1N8165USE3/TR supports junction temperatures from –55 °C to +175 °C, making it suitable for engine bay, avionics, and downhole electronics applications. Its hermetic glass package and Category 1 metallurgical bonds maintain parameter stability and reliability across this full range without derating until above 25 °C ambient.
What does the "USE3/TR" suffix indicate in the 1N8165USE3/TR part number?
The "USE3" suffix denotes RoHS-compliant matte tin plating (per JEDEC J-STD-609), and "TR" indicates tape-and-reel packaging per EIA-296 standard. This distinguishes it from non-RoHS versions (blank suffix) and bulk-packaged variants, ensuring consistent automated assembly compatibility and regulatory compliance.
1N8165USE3/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 33V
- Voltage - Breakdown (Min):
- 37.1V
- Voltage - Clamping (Max) @ Ipp:
- 53.6V
- Current - Peak Pulse (10/1000µs):
- 2.8A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8165USE3/TR FAQ
1.How can I place an order for 1N8165USE3/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8165USE3/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8165USE3/TR reliable?
The price and inventory of 1N8165USE3/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8165USE3/TR is usually 5 days.
3.What payment methods are accepted for 1N8165USE3/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8165USE3/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N8165USE3/TR?
1N8165USE3/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8165USE3/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8165USE3/TR?
For technical support, including 1N8165USE3/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8165USE3/TR requirements.
6.How does Aetrix verify that 1N8165USE3/TR is sourced from the original manufacturer or authorized distributors?
All 1N8165USE3/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8165USE3/TR meets industry standards.
7.What is the process for return or replacement of 1N8165USE3/TR?
All 1N8165USE3/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8165USE3/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8165USE3/TR part is unused and in its original packaging.
Return procedure for 1N8165USE3/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8165USE3/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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onsemi
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Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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