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Microchip Technology 1N8166USE3/TR
- Part No.:
- 1N8166USE3/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8166USE3/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:7,245
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Product details
Overview
1N8166USE3/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 40.9 V minimum breakdown voltage (V(BR)), 36.0 V working standoff voltage (VWM), and ultra-low 4 pF capacitance - enabling ESD/EFT protection in RF front-ends, data lines, and aerospace avionics interfaces.
For engineers reviewing the 1N8166USE3/TR datasheet, 1N8166USE3/TR pinout, 1N8166USE3/TR application, or 1N8166USE3/TR equivalent, key selection criteria include its Category 1 metallurgical bond, RoHS-compliant e3 marking, axial-leaded hard-glass package, and verified IEC61000-4-2/4-4 compliance for mission-critical transient suppression where failure is unacceptable.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve 4 pF total capacitance - the lowest among 150 W-rated TVS devices in its family. Its voidless hermetic glass construction ensures stable electrical parameters across -55°C to +175°C junction temperature range.
The device operates as a unidirectional clamping element with 59.1 V maximum clamping voltage (VC) at 300 A peak impulse current (IPP), and exhibits 0.101 %/°C temperature coefficient of breakdown voltage (αV(BR)). It supports secondary lightning protection per select IEC61000-4-5 levels and is inherently radiation-hardened per MicroNote 050.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR) min | 40.9 V - ensures reliable avalanche conduction above circuit operating voltage without premature triggering |
| VWM | 36.0 V - maximum continuous reverse voltage the device withstands without leakage exceeding 0.5 µA |
| VC @ IPP=300 A | 59.1 V - clamped voltage during 10/1000 µs surge, defining worst-case overvoltage seen by protected IC |
| PPP | 150 W - peak transient energy absorption capability under standard 10/1000 µs waveform |
| CT | 4 pF - enables use on >1 GHz RF paths and high-speed serial links without signal integrity degradation |
| TJ range | -55°C to +175°C - supports operation in extended-temperature aerospace, downhole, and military platforms |
| αV(BR) | 0.101 %/°C - low drift ensures consistent clamping threshold across wide ambient conditions |
Pinout & Package
Package: Axial-leaded, voidless-hermetically-sealed hard glass case with tungsten slugs; cathode band polarity marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive terminal under forward bias; connected to protected line | Accepts transient surge current when cathode-to-anode voltage exceeds VWM |
| Cathode | Negative terminal; marked with band | Serves as reference node; clamps voltage to VC relative to anode during avalanche |
Key Features
| Feature | Design Value |
|---|---|
| Category 1 metallurgical bond | Internal bond structure qualified for high-reliability applications per MIL-PRF-19500, ensuring long-term parameter stability under thermal cycling |
| Triple-layer passivation | Enhanced surface insulation prevents leakage path formation in humid or contaminated environments |
| Voidless hermetic seal | Eliminates internal moisture ingress and gas evolution, preventing parameter shift over lifetime |
| Nonsensitive to ESD | Withstands handling per MIL-STD-750 Method 1020 without parameter degradation or latent damage |
Applications
| Radar Transceiver Front-End | Avionics Data Bus Protection |
|---|---|
Use Scenario: Protecting L-band RF receive paths from induced lightning transients and antenna coupling events. IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed directly at connector interface before low-noise amplifier input. Use Value: 4 pF capacitance avoids detuning of matching networks; 59.1 V clamping preserves LNA input stage integrity during 300 A surges. | Use Scenario: Safeguarding ARINC 429 or MIL-STD-1553B differential receivers against ESD and fast transients. IC Role / Device Role / Timing Role: Standoff-voltage-matched TVS on each data line, referenced to chassis ground. Use Value: 36.0 V VWM aligns with receiver common-mode range; 150 W PPP handles bus-level EFT bursts without latch-up. |
| Downhole Telemetry Interface | Spacecraft Command & Data Handling |
Use Scenario: Shielding RS-485 transceivers in oil/gas wellhead controllers exposed to high-temperature, high-vibration environments. IC Role / Device Role / Timing Role: Primary transient suppressor on bidirectional data lines, mounted with axial leads for mechanical robustness. Use Value: -55°C to +175°C rating enables operation at 150°C ambient; hermetic seal prevents outgassing in vacuum-degraded enclosures. | Use Scenario: Protecting FPGA configuration and telemetry interfaces in low-earth-orbit satellites subject to single-event effects and TID. IC Role / Device Role / Timing Role: Radiation-hardened TVS on command uplink and health-monitoring analog sensor lines. Use Value: Inherent radiation hardness per MicroNote 050 eliminates need for additional shielding; Category 1 bond ensures survivability after 100 krad(Si) exposure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ36A | Surface-mount DO-214AB package; 36 V VWM; 41.1 V V(BR) min; 64.5 V VC @ 24.6 A; 4.5 pF | Lower IPP (24.6 A vs. 300 A); unsuitable for high-energy lightning surges; limited to PCB space-constrained designs | Select when board area is critical and surge energy is below 100 W; not drop-in due to package and rating mismatch |
| 1N6334 | Axial-leaded, 36 V VWM, 40 V V(BR) min, 58.1 V VC @ 255 A, 150 W PPP, but 10 pF capacitance | 2.5× higher capacitance degrades RF performance; lacks Category 1 bond and radiation hardness | Choose only for cost-sensitive industrial applications where 4 pF is not required and radiation tolerance is unnecessary |
Compared with SMCJ36A and 1N6334, the 1N8166USE3/TR uniquely combines axial-leaded ruggedness, 4 pF capacitance, Category 1 reliability, and radiation hardness - making it irreplaceable in aerospace, defense, and downhole systems demanding zero-failure transient protection.
Availability
1N8166USE3/TR is available at Aetrix Electronics and suitable for radar front-ends, avionics data buses, and downhole telemetry systems requiring stable component supply, long-lifecycle support, and guaranteed traceability.
Supply support for 1N8166USE3/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and aerospace-grade components with legacy in defense and space markets.
The 1N8166USE3/TR belongs to Microsemi's legacy 1N81xx TVS family, engineered specifically for mission-critical transient suppression in environments where hermetic sealing, extreme temperature resilience, and parameter stability under radiation are mandatory design requirements.
FAQ
What is the clamping voltage of the 1N8166USE3/TR at its rated peak impulse current?
The 1N8166USE3/TR has a maximum clamping voltage (VC) of 59.1 V when subjected to a 300 A peak impulse current (IPP) under the standard 10/1000 µs waveform. This value defines the upper voltage limit imposed on the protected circuit during a full-rated surge event and is measured at 25°C ambient temperature per Microsemi T4-LDS-xxxx specification.
Is the 1N8166USE3/TR suitable for bidirectional transient protection?
The 1N8166USE3/TR is a unidirectional TVS. For bidirectional protection, two 1N8166USE3/TR devices must be connected in anti-parallel configuration as shown in Figure 5 of the datasheet - resulting in double the capacitance (8 pF) but preserving low-clamp performance across both polarities. A single 1N8166USE3/TR does not provide symmetrical clamping.
Does the 1N8166USE3/TR meet IEC61000-4-2 and IEC61000-4-4 standards?
Yes, the 1N8166USE3/TR is specified for ESD protection per IEC61000-4-2 and electrical fast transient (EFT) immunity per IEC61000-4-4. Its 4 pF capacitance, low leakage (<0.5 µA at 36 V), and fast response enable compliance in system-level testing when properly implemented with appropriate layout and grounding.
What does the "e3" suffix in 1N8166USE3/TR signify?
Per Microsemi's nomenclature guide, the "e3" suffix in 1N8166USE3/TR indicates RoHS-compliant matte tin plating on the axial leads. The "TR" denotes tape-and-reel packaging per EIA-296 standard. This marking confirms environmental compliance without lead-based solder finishes while maintaining full electrical and mechanical equivalence to non-RoHS versions.
How does the 1N8166USE3/TR achieve its 4 pF capacitance?
The 1N8166USE3/TR achieves 4 pF total capacitance through a proprietary internal architecture: a low-capacitance TVS junction is placed in series with a rectifier diode oriented in the opposite direction. This configuration cancels parasitic capacitance contributions while preserving unidirectional clamping behavior - a design exclusive to Microsemi's 1N81xx series and confirmed in Figure 4 of the T4-LDS-xxxx datasheet.
1N8166USE3/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 36V
- Voltage - Breakdown (Min):
- 40.9V
- Voltage - Clamping (Max) @ Ipp:
- 59.1V
- Current - Peak Pulse (10/1000µs):
- 2.54A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8166USE3/TR FAQ
1.How can I place an order for 1N8166USE3/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8166USE3/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8166USE3/TR reliable?
The price and inventory of 1N8166USE3/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8166USE3/TR is usually 5 days.
3.What payment methods are accepted for 1N8166USE3/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8166USE3/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N8166USE3/TR?
1N8166USE3/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8166USE3/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8166USE3/TR?
For technical support, including 1N8166USE3/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8166USE3/TR requirements.
6.How does Aetrix verify that 1N8166USE3/TR is sourced from the original manufacturer or authorized distributors?
All 1N8166USE3/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8166USE3/TR meets industry standards.
7.What is the process for return or replacement of 1N8166USE3/TR?
All 1N8166USE3/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8166USE3/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8166USE3/TR part is unused and in its original packaging.
Return procedure for 1N8166USE3/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8166USE3/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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