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Microchip Technology 1N8167USE3/TR
- Part No.:
- 1N8167USE3/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N8167USE3/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:6,309
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Product details
Overview
1N8167USE3/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 4 pF capacitance, and a 40.0 V working standoff voltage (VWM), with clamping voltage of 64.6 V at 300 A surge current - ideal for ESD/EFT protection in aerospace data links and MIL-STD-750-compliant systems.
For engineers reviewing the 1N8167USE3/TR datasheet, 1N8167USE3/TR pinout, 1N8167USE3/TR application, or 1N8167USE3/TR equivalent, key selection criteria include low-capacitance transient suppression, Category 1 metallurgical bonding, RoHS-compliant e3 plating, hermetic glass packaging, and IEC61000-4-2/4-4 compliance without layout compromise in RF front-end interfaces.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration to achieve ultra-low 4 pF capacitance while maintaining unidirectional operation. Its hard-glass hermetic construction incorporates internal tungsten slugs and Category 1 metallurgical bonds for radiation hardness and thermal stability up to +175 °C junction temperature.
The device operates with 0.5 µA maximum standby current at 40.0 V VWM and exhibits a ±0.101 %/°C breakdown voltage temperature coefficient. It sustains 300 A peak impulse current (IPP) at 10/1000 µs waveform with 150 W peak pulse power rating and 1.0 W steady-state dissipation at 25 °C ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 40.0 V - Maximum continuous reverse-biased operating voltage before conduction begins. |
| V(BR) min | 44.7 V - Minimum breakdown voltage at 1 mA test current, ensuring predictable clamping onset. |
| VC @ IPP | 64.6 V at 300 A - Clamping voltage during 10/1000 µs surge, limiting downstream IC stress. |
| CT | 4 pF - Total capacitance at 0 V, enabling minimal signal distortion in >1 GHz RF paths. |
| PPP | 150 W - Peak pulse power handling capability per IEC61000-4-5 Level 3 secondary lightning surge. |
| TJ Range | –55 to +175 °C - Full military-grade junction temperature range for space and avionics deployment. |
| RθJA | 150 °C/W - Thermal resistance from junction to ambient, defining PCB copper area requirements for 1.0 W steady-state operation. |
Pinout & Package
Package: Axial-leaded, voidless-hermetically-sealed hard glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg; dimensions BD = 0.060–0.085", BL = 0.106–0.175", LD = 0.028–0.032", LL = 0.800–1.300".
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink input | Connected to protected line; conducts surge current toward cathode during overvoltage events. |
| Cathode | Clamped output / reference node | Connected to ground or common rail; defines clamping reference and polarity; marked by band. |
Key Features
| Feature | Design Value |
|---|---|
| Low capacitance architecture | 4 pF achieved via integrated anti-parallel rectifier, preserving signal integrity in high-speed serial links. |
| Category 1 metallurgical bond | Internal tungsten-based bond structure qualified for high-reliability applications including spaceflight and nuclear instrumentation. |
| Hermetic voidless glass seal | Eliminates moisture ingress and internal delamination risk under thermal cycling and vacuum exposure. |
| IEC61000-4-2/4-4 compliance | Validated ESD (±15 kV air, ±8 kV contact) and EFT (40 A, 5/50 ns) immunity without external filtering. |
| Radiation hardness | Inherent tolerance to total ionizing dose (TID) per Microsemi MicroNote 050, suitable for low-earth orbit systems. |
Applications
| Aerospace Data Bus Protection | MIL-STD-1553B Transceiver Interface |
|---|---|
Use Scenario: Protecting bidirectional Manchester-encoded data lines on satellite command telemetry buses exposed to launch-induced ESD and cosmic-ray transients. IC Role / Device Role / Timing Role: Unidirectional TVS placed across each data line (±) to ground, clamping surges before they reach bus transceivers. Use Value: 4 pF capacitance prevents signal rise-time degradation at 1 Mbps, while 64.6 V clamping ensures transceiver VCC–20% margin remains intact. |
Use Scenario: Shielding MIL-STD-1553B remote terminal (RT) transceivers from induced surges during aircraft electromagnetic environment (EME) testing. IC Role / Device Role / Timing Role: Standoff-rated TVS mounted directly at connector entry point to shunt fast transients before coupling into transformer-coupled bus interface. Use Value: 40.0 V VWM matches 1553B differential swing envelope; 150 W PPP withstands 10/1000 µs lightning-induced surges per DO-160 Section 22. |
| Avionics Sensor Signal Conditioning | High-Reliability Industrial Control I/O |
Use Scenario: Safeguarding analog sensor inputs (e.g., RTD, thermocouple amplifiers) in flight control computers against ground-loop transients and static discharge. IC Role / Device Role / Timing Role: Low-leakage TVS (0.5 µA ID) placed between signal line and chassis ground, minimizing DC offset error in precision measurement paths. Use Value: Sub-1 µA leakage preserves <1 LSB error in 16-bit ADC front ends; –55 to +175 °C operation supports extended-range environmental chambers. |
Use Scenario: Protecting programmable logic controller (PLC) digital input modules connected to field sensors in oil refinery control rooms subject to lightning-induced surges. IC Role / Device Role / Timing Role: Primary transient clamp on 24 V DC input channels, coordinated with upstream fusing to meet IEC61000-4-5 Level 4 (4 kV line-to-ground). Use Value: Hermetic seal prevents corrosion in humid, sulfur-laden atmospheres; 300 A IPP handles worst-case induced currents without parametric shift. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N8167US | No e3 RoHS marking; tin/lead plating instead of matte tin; identical electrical specs and package. | Restricted to non-RoHS production environments (e.g., legacy defense programs with Pb exemption). | Select only when RoHS compliance is not required and tin/lead solder compatibility is needed. |
| SMBJ40A | Higher 6.5 pF capacitance; 69.4 V VC at 32.4 A; SMC surface-mount package; no Category 1 bond or radiation qualification. | Suitable for commercial industrial controls but not certified for aerospace or radiation-hardened use. | Choose for cost-sensitive, non-military volume production where 4 pF and hermeticity are not mandatory. |
Compared with 1N8167USE3/TR, the 1N8167US offers identical protection performance without RoHS compliance, while SMBJ40A trades ultra-low capacitance and reliability for lower cost and surface-mount convenience - making the 1N8167USE3/TR essential where signal fidelity and mission-critical robustness are non-negotiable.
Availability
1N8167USE3/TR is available at Aetrix Electronics and suitable for aerospace data bus protection, MIL-STD-1553B transceiver interfaces, and avionics sensor signal conditioning requiring stable component supply across long-life programs and obsolescence-sensitive designs.
Supply support for 1N8167USE3/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and secure analog/mixed-signal solutions for aerospace, defense, and industrial markets.
The 1N8167USE3/TR belongs to Microsemi's legacy "LDS" series of hermetic TVS diodes, engineered specifically for mission-critical transient suppression in environments where failure is not an option - including spaceflight, nuclear instrumentation, and airborne computing.
FAQ
What is the clamping voltage of the 1N8167USE3/TR at its rated surge current?
The 1N8167USE3/TR has a maximum clamping voltage (VC) of 64.6 V when subjected to a 300 A peak impulse current (IPP) with a 10/1000 µs waveform. This value is measured at 25 °C ambient and ensures downstream circuitry remains within safe operating limits during transient events. The 1N8167USE3/TR maintains this clamping performance across its full –55 to +175 °C junction temperature range, supporting consistent protection in extreme environments.
Is the 1N8167USE3/TR RoHS compliant, and how is compliance indicated in the part number?
Yes, the 1N8167USE3/TR is RoHS compliant, as confirmed by the "e3" suffix in its full designation. Per Microsemi's nomenclature, "e3" specifies matte tin plating over copper leads and full compliance with Directive 2011/65/EU. The 1N8167USE3/TR contains no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE above threshold limits, and its hermetic glass package eliminates hazardous outgassing concerns in vacuum applications.
Does the 1N8167USE3/TR support bidirectional transient suppression?
No, the 1N8167USE3/TR is strictly unidirectional. To achieve bidirectional protection, two 1N8167USE3/TR devices must be connected in anti-parallel configuration - as documented in Figure 5 of the datasheet. This arrangement doubles the effective capacitance to 8 pF but retains the same 40.0 V standoff and 64.6 V clamping behavior in both polarities, preserving signal integrity better than standard bidirectional TVS diodes.
What is the thermal resistance and steady-state power rating of the 1N8167USE3/TR?
The 1N8167USE3/TR has a thermal resistance of 150 °C/W (junction-to-ambient) and a steady-state average power rating of 1.0 W at 25 °C ambient temperature. This rating assumes adequate PCB copper area for heat dissipation; exceeding 1.0 W continuously risks junction temperature exceeding +175 °C. For pulsed operation, the 1N8167USE3/TR supports 150 W peak pulse power at 10/1000 µs with ≤0.01% duty cycle.
How does the 1N8167USE3/TR achieve its ultra-low 4 pF capacitance?
The 1N8167USE3/TR achieves 4 pF capacitance through a proprietary internal architecture that integrates a rectifier diode in series and opposite polarity to the main TVS junction - effectively canceling parasitic capacitance while preserving unidirectional clamping behavior. This design, detailed in Figure 4 of the datasheet, is exclusive to Microsemi's LDS series and enables RF-transparent protection unmatched by conventional planar or SMD TVS devices.
1N8167USE3/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 40V
- Voltage - Breakdown (Min):
- 44.7V
- Voltage - Clamping (Max) @ Ipp:
- 64.6V
- Current - Peak Pulse (10/1000µs):
- 2.32A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
1N8167USE3/TR FAQ
1.How can I place an order for 1N8167USE3/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N8167USE3/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N8167USE3/TR reliable?
The price and inventory of 1N8167USE3/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N8167USE3/TR is usually 5 days.
3.What payment methods are accepted for 1N8167USE3/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N8167USE3/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N8167USE3/TR?
1N8167USE3/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N8167USE3/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N8167USE3/TR?
For technical support, including 1N8167USE3/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N8167USE3/TR requirements.
6.How does Aetrix verify that 1N8167USE3/TR is sourced from the original manufacturer or authorized distributors?
All 1N8167USE3/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N8167USE3/TR meets industry standards.
7.What is the process for return or replacement of 1N8167USE3/TR?
All 1N8167USE3/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N8167USE3/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N8167USE3/TR part is unused and in its original packaging.
Return procedure for 1N8167USE3/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N8167USE3/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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Diodes Incorporated
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